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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR668DP-T1-RE3

Name: SIDR668DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR668DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR668DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR668DP-T1-RE3.pdf

Description:: N-CHANNEL 100-V (D-S) MOSFET

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Product details

Overview

SIDR668DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 4.8 mΩ at V_GS = 10 V, Q_g = 72 nC (typ), and continuous drain current I_D = 95 A at T_C = 25 °C. It is engineered for high-efficiency synchronous rectification and primary-side switching in DC/DC converters and server power supplies.

For engineers reviewing the SIDR668DP-T1-RE3 datasheet, SIDR668DP-T1-RE3 pinout, SIDR668DP-T1-RE3 application, or SIDR668DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on)–Q_g and R_DS(on)–Q_oss figures of merit, top-side cooling capability, 100 % R_g and UIS testing, and suitability for high-current, high-frequency switching in thermally constrained layouts.

Technical Context

This MOSFET employs TrenchFET® Gen IV process technology to optimize conduction and switching losses simultaneously. Its gate charge profile-Q_g = 72 nC (typ), Q_gd = 12 nC (typ), Q_gs = 21.6 nC (typ)-enables fast, controlled turn-on/turn-off with minimal Miller-induced oscillation. The device features a robust body diode with t_rr = 59 ns (typ) and Q_rr = 115 nC (typ), supporting efficient hard-switched and synchronous rectifier operation.

The PowerPAK® SO-8DC package provides dual-sided thermal dissipation: bottom-side copper drain paddle and exposed top-side copper for direct heatsink attachment. Thermal resistance is R_thJC(drain) = 0.8 °C/W (typ), enabling high-power density designs where junction-to-case heat transfer is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; supports 48 V and 54 V input bus architectures with margin.
R_DS(on) max @ V_GS = 10 V	4.8 mΩ - Enables <1 W conduction loss at 45 A, critical for high-current output rails in server VRMs.
Q_g typ	72 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching in resonant topologies.
I_D continuous @ T_C = 25 °C	95 A - Sustains high load currents without derating when mounted on adequately sized copper area or heatsink.
R_thJC (drain)	0.8 °C/W (typ) - Allows ~125 W power dissipation with ≤100 °C temperature rise from case to junction.
Body diode V_SD	0.73 V (typ) at I_S = 5 A - Low forward drop minimizes reverse-recovery losses during synchronous rectification.
t_rr	59 ns (typ) - Fast recovery reduces shoot-through risk and EMI in high-frequency buck and LLC converters.

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed top-side copper drain pad and bottom-side drain paddle. Dimensions: 5.00 mm × 6.00 mm × 0.56 mm (L × W × H). Features top-side thermal interface for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to large-area copper drain paddle; enable dual-side thermal extraction.
Pin 4 (top view)	Gate (G)	Single gate terminal located adjacent to source; optimized layout minimizes gate loop inductance for stable high-speed switching.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers best-in-class R_DS(on)–Q_g FOM (≤0.34 Ω·nC), reducing combined conduction and switching losses.
Top-side cooling structure	Exposed copper drain on top surface allows direct thermal interface to heatsink-adds ≥30 % thermal capacity vs. standard SO-8.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
Low Q_oss = 61 pC (typ)	Minimizes capacitive turn-off loss and improves light-load efficiency in hard-switched and ZVS topologies.
Optimized body diode	Q_rr = 115 nC (typ) with soft recovery reduces EMI and voltage overshoot during commutation.

Applications

Synchronous Rectification	Primary-Side Switching
Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., 12 V → 1 V VRM for CPUs/GPUs). IC Role / Device Role: Low-V_DS N-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 4.8 mΩ R_DS(on) cuts conduction loss by >60 % vs. typical 40 V Schottky, enabling >95 % full-load efficiency.	Use Scenario: High-side switch in 48 V input telecom/server power supplies (e.g., half-bridge LLC primary). IC Role / Device Role: Main power switch handling up to 95 A continuous drain current at 100 V blocking rating. Use Value: 0.8 °C/W R_thJC enables compact thermal design with external heatsink, supporting >1 kW output density.
OR-ing Circuit	Battery Load Switch
Use Scenario: Redundant power path management in enterprise storage systems using dual 12 V supplies. IC Role / Device Role: Back-to-back configured MOSFET providing low-loss, bidirectional current control with reverse polarity protection. Use Value: Ultra-low R_DS(on) ensures <50 mV drop at 50 A, minimizing voltage imbalance and thermal mismatch between rails.	Use Scenario: High-current battery disconnect switch in industrial portable equipment (e.g., 24 V LiFePO₄ packs). IC Role / Device Role: Single-pole, normally-open load switch controlling main battery feed to system power rail. Use Value: 95 A rating and 100 % UIS tested construction withstands inrush and fault currents without latch-up or failure.

Synchronous Rectification

Primary-Side Switching

Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., 12 V → 1 V VRM for CPUs/GPUs).

IC Role / Device Role: Low-V_DS N-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 4.8 mΩ R_DS(on) cuts conduction loss by >60 % vs. typical 40 V Schottky, enabling >95 % full-load efficiency.

Use Scenario: High-side switch in 48 V input telecom/server power supplies (e.g., half-bridge LLC primary).

IC Role / Device Role: Main power switch handling up to 95 A continuous drain current at 100 V blocking rating.

Use Value: 0.8 °C/W R_thJC enables compact thermal design with external heatsink, supporting >1 kW output density.

OR-ing Circuit

Battery Load Switch

Use Scenario: Redundant power path management in enterprise storage systems using dual 12 V supplies.

IC Role / Device Role: Back-to-back configured MOSFET providing low-loss, bidirectional current control with reverse polarity protection.

Use Value: Ultra-low R_DS(on) ensures <50 mV drop at 50 A, minimizing voltage imbalance and thermal mismatch between rails.

Use Scenario: High-current battery disconnect switch in industrial portable equipment (e.g., 24 V LiFePO₄ packs).

IC Role / Device Role: Single-pole, normally-open load switch controlling main battery feed to system power rail.

Use Value: 95 A rating and 100 % UIS tested construction withstands inrush and fault currents without latch-up or failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 65 nC; same PowerPAK SO-8DC package.	Slightly higher conduction loss but lower gate charge-better suited for very high-frequency (>2 MHz) switching where Q_g dominates.	Prefer SiR626DP-T1-RE3 when optimizing for switching loss over conduction loss in resonant converters.
IRFH8326TRPBF	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 82 nC; PQFN 5×6 mm package with bottom-side cooling only.	Lower R_DS(on) but no top-side cooling-requires larger PCB copper area for equivalent thermal performance.	Choose IRFH8326TRPBF only if board layout permits extensive thermal copper and top-side heatsinking is unavailable.

Compared with SiR626DP-T1-RE3 and IRFH8326TRPBF, the SIDR668DP-T1-RE3 uniquely balances ultra-low R_DS(on), moderate Q_g, and dual-sided thermal capability-making it optimal for space-constrained, high-current 48–54 V systems requiring both efficiency and thermal headroom.

Availability

SIDR668DP-T1-RE3 is available at Aetrix Electronics and suitable for server power supplies, telecom DC/DC converters, and industrial motor drive control requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIDR668DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIDR668DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8DC family, designed specifically for high-current, high-efficiency switching in datacenter, telecom, and industrial power systems where thermal density and reliability are critical.

FAQ

What is the maximum continuous drain current rating for SIDR668DP-T1-RE3 at 70 °C case temperature?

The SIDR668DP-T1-RE3 supports 76 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conditions and assumes proper PCB copper area and/or heatsink attachment to maintain case temperature. The device remains within safe operating area up to this current level when operated within its V_DS and power dissipation limits.

Does SIDR668DP-T1-RE3 have a guaranteed gate threshold voltage range?

Yes, the SIDR668DP-T1-RE3 has a guaranteed V_GS(th) range of 2.0 V to 3.4 V at T_J = 25 °C and I_D = 250 μA. This specification ensures reliable turn-on behavior across manufacturing lots and enables compatibility with standard 3.3 V and 5 V gate drivers without requiring external level-shifting circuitry.

Is SIDR668DP-T1-RE3 suitable for synchronous rectification in a 12 V output buck converter?

Yes, the SIDR668DP-T1-RE3 is well-suited for synchronous rectification in 12 V output buck converters due to its low 4.8 mΩ R_DS(on) at 10 V gate drive, fast 59 ns body diode recovery time, and low Q_rr. Its top-side cooling feature also helps manage localized heating at the output stage, improving overall converter thermal balance and efficiency above 90 % at full load.

What is the thermal resistance from junction to ambient for SIDR668DP-T1-RE3 on a standard FR4 board?

On a 1" × 1" FR4 board per JEDEC standards, the SIDR668DP-T1-RE3 has R_thJA = 15 °C/W (typ) and 20 °C/W (max) for t ≤ 10 s. For steady-state operation, thermal performance depends heavily on PCB copper area and airflow; actual R_thJA may exceed 40 °C/W without additional heatsinking or thermal vias-hence top-side cooling is recommended for sustained high-current operation.

Can SIDR668DP-T1-RE3 be used in avalanche-rated applications?

Yes, the SIDR668DP-T1-RE3 is rated for single-pulse avalanche energy E_AS = 61.2 mJ and single-pulse avalanche current I_AS = 35 A (L = 0.1 mH), with 100 % UIS testing performed during production. These ratings confirm ruggedness under inductive switching stress, making it suitable for flyback, active clamp, and other topologies where unclamped inductive energy must be safely absorbed.

SIDR668DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 23.2A (Ta), 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 108 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR668DP-T1-RE3 FAQ

1.How can I place an order for SIDR668DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR668DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR668DP-T1-RE3 reliable?

The price and inventory of SIDR668DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR668DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR668DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR668DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR668DP-T1-RE3?

SIDR668DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR668DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR668DP-T1-RE3?

For technical support, including SIDR668DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR668DP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR668DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR668DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR668DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR668DP-T1-RE3?

All SIDR668DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR668DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR668DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR668DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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