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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR680ADP-T1-RE3

Name: SIDR680ADP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR680ADP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR680ADP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR680ADP-T1-RE3.pdf

Description:: MOSFET N-CH 80V 30.7A/137A PPAK

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Product details

Overview

SIDR680ADP-T1-RE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 2.88 mΩ at V_GS = 10 V, Q_g = 43 nC (typ.), and 137 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIDR680ADP-T1-RE3 datasheet, SIDR680ADP-T1-RE3 pinout, SIDR680ADP-T1-RE3 application, or SIDR680ADP-T1-RE3 equivalent, key selection criteria include its low R_DS(on)–Q_oss figure-of-merit, 100% R_g and UIS testing, and thermal performance with R_thJC = 0.8 °C/W (drain), critical for high-power density power supply designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low conduction and switching losses. Its gate charge profile (Q_g = 43 nC typ. at V_GS = 7.5 V) and low Q_gd/Q_g ratio support fast, efficient hard-switching operation in high-frequency topologies.

The PowerPAK® SO-8DC package features dual-side cooling: exposed copper drain pads on both top and bottom surfaces, enabling enhanced thermal dissipation via PCB copper area and optional heatsink contact. Junction-to-case thermal resistance is specified separately for drain (0.8 °C/W) and source (1.1 °C/W) paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports primary-side switch operation in 48 V input DC/DC converters and OR-ing applications up to 60 V bus systems.
R_DS(on) max @ V_GS = 10 V	2.88 mΩ - enables <1.2 W conduction loss at 20 A, reducing heat sink requirements in compact 100+ W power stages.
Q_g typ. @ V_GS = 7.5 V	43 nC - balances gate drive strength and switching speed for ZVS/ZCS-compatible control in resonant converters.
I_D continuous @ T_C = 25 °C	137 A - allows single-device implementation of high-current synchronous rectifiers in server VRMs and telecom PSUs.
R_thJC (drain)	0.8 °C/W - permits direct thermal coupling to heatsink or copper plane, supporting >100 W steady-state dissipation with minimal ΔT.
V_GS(th)	2.0–3.5 V - ensures robust turn-on with standard 5 V or 3.3 V gate drivers while maintaining noise immunity.
C_iss	4415 pF - influences gate drive loop stability and EMI filter design in high-frequency (>500 kHz) switching applications.

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain pads on top and bottom surfaces; dimensions 6.00 mm × 5.00 mm × 0.56 mm (L × W × H); RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; electrically tied internally; used for low-inductance return path and thermal conduction to PCB ground plane.
5, 6, 7, 8	Drain (D)	High-current drain terminals; top and bottom exposed copper pads provide parallel thermal and electrical paths to heatsink or inner-layer copper.
4 (top side marking)	Gate (G)	Single gate terminal located at corner opposite drain pins; requires controlled-impedance routing to minimize ringing in high-dV/dt environments.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)–Q_oss FOM for reduced switching + conduction loss trade-off in high-frequency SMPS.
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress (E_AS = 80 mJ).
Double-sided cooling structure	Enables thermal management flexibility: top-side heatsinking or bottom-side PCB copper area can be used independently or concurrently.
Low threshold voltage variation	V_GS(th) tempco of –8.2 mV/°C maintains stable turn-on timing across –55 °C to +150 °C junction temperature range.
Optimized body diode recovery	Q_rr = 70 nC (typ.) and t_rr = 53 ns support efficient synchronous rectification without external Schottky assist.

Applications

Synchronous Rectification	Primary-Side Switching
Use Scenario: Secondary-side rectification in isolated 48 V–12 V DC/DC converters for AI accelerators and telecom equipment. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by controller's complementary PWM output. Use Value: Reduces conduction loss by >65% vs. 40 V Schottky, enabling >96% efficiency at 100 A load with no forced air cooling.	Use Scenario: High-current primary switch in half-bridge LLC resonant converter for 1 kW server PSU. IC Role / Device Role / Timing Role: High-side switching element handling full primary current; operated in zero-voltage switching mode. Use Value: Low Q_g/Q_oss ratio minimizes dead-time losses and improves light-load efficiency without compromising EMI.
OR-ing Circuit	Battery Load Switch
Use Scenario: Redundant 12 V power rail combining in industrial PLC backplanes with hot-swap capability. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode; controlled by dedicated OR-ing controller. Use Value: Eliminates 0.4 V forward drop of discrete diodes, reducing power loss by 4.8 W per 12 A branch at full load.	Use Scenario: Main battery disconnect switch in 24 V automotive ADAS domain controller with reverse polarity protection. IC Role / Device Role / Timing Role: Single N-channel high-side load switch; driven via charge pump gate driver to meet 24 V V_DS requirement. Use Value: R_DS(on) = 2.88 mΩ limits voltage drop to <35 mV at 12 A, preserving system voltage margin during cold-crank conditions.

Synchronous Rectification

Primary-Side Switching

Use Scenario: Secondary-side rectification in isolated 48 V–12 V DC/DC converters for AI accelerators and telecom equipment.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by controller's complementary PWM output.

Use Value: Reduces conduction loss by >65% vs. 40 V Schottky, enabling >96% efficiency at 100 A load with no forced air cooling.

Use Scenario: High-current primary switch in half-bridge LLC resonant converter for 1 kW server PSU.

IC Role / Device Role / Timing Role: High-side switching element handling full primary current; operated in zero-voltage switching mode.

Use Value: Low Q_g/Q_oss ratio minimizes dead-time losses and improves light-load efficiency without compromising EMI.

OR-ing Circuit

Battery Load Switch

Use Scenario: Redundant 12 V power rail combining in industrial PLC backplanes with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode; controlled by dedicated OR-ing controller.

Use Value: Eliminates 0.4 V forward drop of discrete diodes, reducing power loss by 4.8 W per 12 A branch at full load.

Use Scenario: Main battery disconnect switch in 24 V automotive ADAS domain controller with reverse polarity protection.

IC Role / Device Role / Timing Role: Single N-channel high-side load switch; driven via charge pump gate driver to meet 24 V V_DS requirement.

Use Value: R_DS(on) = 2.88 mΩ limits voltage drop to <35 mV at 12 A, preserving system voltage margin during cold-crank conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 3.1 mΩ @ 10 V; Q_g = 41 nC; PowerSO-8 package; R_thJC = 1.0 °C/W (higher than SIDR680ADP-T1-RE3's 0.8 °C/W).	Limited to ≤120 A continuous due to higher thermal resistance; less suitable for sustained 137 A operation without derating.	Preferred where legacy IR footprint compatibility is required and thermal margin allows 5–10% higher R_DS(on).
DMTH6005LPSQ-13	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 49 nC; PowerDI 5060 package; R_thJC = 0.95 °C/W; rated for automotive AEC-Q101.	Higher Q_g increases gate drive loss; automotive qualification adds cost but not needed for industrial/commercial use.	Selected only when AEC-Q101 compliance is mandatory; otherwise inferior FOM and thermal performance vs. SIDR680ADP-T1-RE3.

Compared with IRF6642TRPBF and DMTH6005LPSQ-13, SIDR680ADP-T1-RE3 offers the lowest R_DS(on)–Q_oss FOM and best junction-to-case thermal resistance, enabling higher power density and lower system-level cooling cost in non-automotive high-current power stages.

Availability

SIDR680ADP-T1-RE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, synchronous rectification modules, and OR-ing power distribution systems requiring stable component supply and long-term production continuity.

Supply support for SIDR680ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIDR680ADP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SIDR680ADP-T1-RE3 at 70 °C case temperature?

The SIDR680ADP-T1-RE3 supports 110 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating from the 137 A value at 25 °C case temperature, based on the device's R_thJC = 0.8 °C/W and maximum T_J = 150 °C limit. Engineers must verify PCB copper area and airflow to sustain this current in actual layout.

Does SIDR680ADP-T1-RE3 support gate drive from a 5 V microcontroller without level shifting?

Yes, SIDR680ADP-T1-RE3 has a gate threshold voltage range of 2.0–3.5 V and is fully enhanced at V_GS = 5 V, delivering R_DS(on) ≤ 3.50 mΩ. However, for optimal conduction loss and thermal performance, driving at V_GS = 10 V is recommended. A 5 V gate drive yields acceptable but suboptimal R_DS(on), increasing conduction loss by ~22% versus 10 V drive.

What is the significance of the "DC" in PowerPAK® SO-8DC for SIDR680ADP-T1-RE3?

The "DC" in PowerPAK® SO-8DC stands for "Double Cooling," indicating that SIDR680ADP-T1-RE3 features thermally enhanced construction with exposed copper drain pads on both top and bottom surfaces. This allows simultaneous heat extraction through the PCB (bottom) and an optional heatsink or thermal pad (top), improving thermal resistance by up to 30% compared to standard SO-8 variants.

Is SIDR680ADP-T1-RE3 suitable for avalanche energy handling in inductive switching circuits?

Yes, SIDR680ADP-T1-RE3 is 100% tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy E_AS = 80 mJ at T_J = 25 °C. Its guaranteed I_AS = 40 A supports reliable operation in flyback and boost converters where inductive energy must be safely clamped without external snubbers.

How does the body diode performance of SIDR680ADP-T1-RE3 impact synchronous rectification design?

The SIDR680ADP-T1-RE3 body diode exhibits V_SD = 0.72 V (typ.) at 5 A and reverse recovery charge Q_rr = 70 nC (typ.), enabling clean commutation in synchronous rectifiers without shoot-through risk. Its low Q_rr reduces switching loss and EMI during freewheeling transitions, allowing elimination of external Schottky diodes in many 12–48 V output designs.

SIDR680ADP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 30.7A (Ta), 137A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.88mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4415 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR680ADP-T1-RE3 FAQ

1.How can I place an order for SIDR680ADP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR680ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR680ADP-T1-RE3 reliable?

The price and inventory of SIDR680ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR680ADP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR680ADP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR680ADP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR680ADP-T1-RE3?

SIDR680ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR680ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR680ADP-T1-RE3?

For technical support, including SIDR680ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR680ADP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR680ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR680ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR680ADP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR680ADP-T1-RE3?

All SIDR680ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR680ADP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR680ADP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR680ADP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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