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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR680DP-T1-RE3

Name: SIDR680DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR680DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR680DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR680DP-T1-RE3.pdf

Description:: N-CHANNEL 80-V (D-S) MOSFET

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Product details

Overview

SIDR680DP-T1-RE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 2.4 mΩ (typ.) at V_GS = 10 V, Q_g = 53.5 nC (typ.), and 100 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIDR680DP-T1-RE3 datasheet, SIDR680DP-T1-RE3 pinout, SIDR680DP-T1-RE3 application, or SIDR680DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on)–Q_oss figure-of-merit, top-side cooling capability, 100% R_g and UIS testing, and suitability for thermally constrained OR-ing and battery-switching designs requiring <1.1 V body diode forward voltage at 5 A.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve a balanced trade-off between conduction loss (via ultra-low R_DS(on)) and switching loss (via controlled Q_g and Q_gd). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 3.4 V at 250 μA, enabling robust turn-on with standard 7.5 V or 10 V gate drivers.

The PowerPAK® SO-8DC package features dual-sided thermal paths - bottom-side copper drain paddle for PCB conduction and exposed top-side copper for direct heatsink attachment - yielding R_thJC(drain) = 0.8 °C/W (typ.) and supporting high-power density operation without external heatsinks in many applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports input rails up to 48 V nominal systems with 20 % margin for transients in industrial and telecom power supplies.
R_DS(on) max @ 10 V	2.9 mΩ - Enables ≤ 2.9 W conduction loss at 100 A, critical for minimizing heat generation in high-current synchronous rectifiers.
Q_g typ.	53.5 nC - Determines gate drive power requirement; compatible with common 1-A peak gate drivers for <100 ns switching transitions.
I_D continuous	100 A @ T_C = 25 °C - Specifies maximum safe steady-state current when case temperature is maintained at 25 °C via heatsinking.
V_SD max	1.1 V @ I_S = 5 A - Limits reverse recovery losses and forward drop in body diode conduction during dead-time in half-bridge topologies.
R_thJC (drain)	0.8 °C/W (typ.) - Quantifies thermal resistance from junction to drain paddle; enables accurate junction temperature estimation under known PCB copper area and heatsink conditions.
C_iss	5150 pF - Influences Miller effect and gate drive stability; requires careful layout to avoid oscillation with high dv/dt switching nodes.

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, dual-cooling surface-mount package with exposed drain paddle on both top and bottom surfaces; dimensions 6.00 mm × 5.00 mm × 0.56 mm (L × W × H); RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to large copper paddle; primary current path and main thermal conduction path to PCB and/or heatsink.
5	Source (S)	Power return node; electrically isolated from drain; connects to source trace and gate driver reference ground.
6	Gate (G)	Control terminal; requires low-inductance routing and local 10 nF bypass capacitor to suppress ringing during fast switching.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)–Q_oss FOM for reduced switching + conduction losses in high-frequency DC/DC stages.
Top-side cooling	Exposed top copper allows direct thermal interface to heatsink or cold plate, increasing total power handling by ≥30 % vs. standard SO-8.
100 % R_g tested	Ensures gate resistance consistency (0.3–1.5 Ω), critical for predictable turn-on/turn-off timing and EMI control across production lots.
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events up to 40 A avalanche current and 80 mJ energy.
Low V_GS(th) variation	ΔV_GS(th)/T_J = −7.4 mV/°C ensures stable turn-on behavior over −55 °C to +150 °C operating range.

Applications

Synchronous Rectification	Primary-Side Switching
Use Scenario: Used as secondary-side switch in isolated LLC or phase-shifted full-bridge DC/DC converters for server VRMs and telecom rectifiers. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and recover energy during body diode conduction, synchronized to primary-side PWM. Use Value: Cuts conduction losses by >50 % vs. 40 V Schottky, enabling >97 % efficiency at 50 A output with <0.72 V V_SD at 5 A.	Use Scenario: High-current primary switch in 48 V input, 12 V output non-isolated buck converters for AI accelerator power delivery. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input bus to output inductor; driven by high-speed gate driver with <32 ns td(on). Use Value: Supports 100 A continuous operation at T_C = 25 °C with R_DS(on) = 2.4 mΩ, limiting I²R loss to 24 W at full load.
OR-ing Circuit	Battery Load Switch
Use Scenario: Back-to-back configuration in redundant 12 V/24 V power distribution units for industrial PLCs and rail signaling systems. IC Role / Device Role / Timing Role: Acts as ideal diode to prevent reverse current flow while enabling near-zero forward drop and fast reverse recovery (t_rr = 58 ns). Use Value: Eliminates 0.3–0.5 V diode drop, reducing heat generation by >80 % and enabling compact fanless enclosure design.	Use Scenario: High-side load switch controlling power to motor drivers or sensor modules in battery-powered robotics and portable test equipment. IC Role / Device Role / Timing Role: Provides controlled inrush current limiting and reverse polarity protection via gate-controlled turn-on and integrated body diode. Use Value: Withstands 200 A pulsed drain current and supports 100 A continuous load, enabling rapid system power-up without voltage sag.

Synchronous Rectification

Primary-Side Switching

Use Scenario: Used as secondary-side switch in isolated LLC or phase-shifted full-bridge DC/DC converters for server VRMs and telecom rectifiers.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and recover energy during body diode conduction, synchronized to primary-side PWM.

Use Value: Cuts conduction losses by >50 % vs. 40 V Schottky, enabling >97 % efficiency at 50 A output with <0.72 V V_SD at 5 A.

Use Scenario: High-current primary switch in 48 V input, 12 V output non-isolated buck converters for AI accelerator power delivery.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input bus to output inductor; driven by high-speed gate driver with <32 ns td(on).

Use Value: Supports 100 A continuous operation at T_C = 25 °C with R_DS(on) = 2.4 mΩ, limiting I²R loss to 24 W at full load.

OR-ing Circuit

Battery Load Switch

Use Scenario: Back-to-back configuration in redundant 12 V/24 V power distribution units for industrial PLCs and rail signaling systems.

IC Role / Device Role / Timing Role: Acts as ideal diode to prevent reverse current flow while enabling near-zero forward drop and fast reverse recovery (t_rr = 58 ns).

Use Value: Eliminates 0.3–0.5 V diode drop, reducing heat generation by >80 % and enabling compact fanless enclosure design.

Use Scenario: High-side load switch controlling power to motor drivers or sensor modules in battery-powered robotics and portable test equipment.

IC Role / Device Role / Timing Role: Provides controlled inrush current limiting and reverse polarity protection via gate-controlled turn-on and integrated body diode.

Use Value: Withstands 200 A pulsed drain current and supports 100 A continuous load, enabling rapid system power-up without voltage sag.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 47.5 nC; same PowerPAK SO-8DC package.	Slightly higher conduction loss but lower gate charge improves light-load efficiency in variable-frequency PFC stages.	Select SiR626DP-T1-RE3 when prioritizing gate drive efficiency over absolute R_DS(on) in medium-current (<60 A) applications.
IRF6642TRPBF	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 42 nC; PQFN 5×6 mm package; no top-side cooling.	Lacks top-side thermal path; higher R_thJA limits power density in space-constrained layouts without forced air.	Choose IRF6642TRPBF only if board-level thermal design relies solely on bottom-side conduction and footprint compatibility is mandatory.

Compared with SiR626DP-T1-RE3 and IRF6642TRPBF, the SIDR680DP-T1-RE3 offers the lowest R_DS(on) and dual thermal paths - making it optimal for high-current, thermally aggressive applications like 48 V server VRMs where junction temperature must stay below 125 °C under full load without active cooling.

Availability

SIDR680DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and OR-ing applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIDR680DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal management.

The PowerPAK® SO-8DC product line was engineered specifically for high-current, high-density power conversion systems demanding superior thermal performance and low R_DS(on)–Q_g trade-offs - targeting data center, telecom, and industrial motor control markets.

FAQ

What is the maximum continuous drain current rating for SIDR680DP-T1-RE3 under real-world PCB conditions?

The SIDR680DP-T1-RE3 is rated for 100 A continuous drain current when case temperature (T_C) is maintained at 25 °C - typically achievable using ≥1 sq. inch of 2-oz copper on FR4 with minimal thermal via count. At T_C = 70 °C, the rating remains 100 A due to its low R_DS(on), but ambient-limited ratings drop to 26.2 A at T_A = 70 °C on standard 1" × 1" board per Vishay's test condition b.

Does SIDR680DP-T1-RE3 support gate drive voltages below 10 V, and what is its typical R_DS(on) at 7.5 V?

Yes, SIDR680DP-T1-RE3 is fully characterized at 7.5 V gate drive: R_DS(on) is 2.6 mΩ (typ.) and 3.4 mΩ (max) at I_D = 15 A. Its V_GS(th) range (2.0–3.4 V) ensures reliable enhancement-mode turn-on even with gate drivers delivering 7.5 V, making it compatible with widely used 8 V logic-level controllers without level-shifting.

How does the top-side cooling feature of SIDR680DP-T1-RE3 improve thermal performance compared to standard SO-8 packages?

The top-side cooling feature of SIDR680DP-T1-RE3 exposes copper on the upper surface of the PowerPAK® SO-8DC package, enabling direct thermal interface to a heatsink or cold plate. This reduces effective R_thJA by up to 40 % versus bottom-only conduction, allowing the SIDR680DP-T1-RE3 to sustain higher power dissipation - e.g., 125 W at T_C = 25 °C - without exceeding T_J(max) = 150 °C.

Is SIDR680DP-T1-RE3 suitable for avalanche energy handling in inductive switching applications?

Yes, SIDR680DP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested per JEDEC standards, with guaranteed single-pulse avalanche ratings of I_AS = 40 A and E_AS = 80 mJ. This makes the SIDR680DP-T1-RE3 appropriate for flyback, boost, and motor drive circuits where inductive kickback must be safely absorbed without external snubbers.

What is the body diode reverse recovery time (t_rr) of SIDR680DP-T1-RE3, and why does it matter in synchronous rectifier designs?

The body diode reverse recovery time t_rr of SIDR680DP-T1-RE3 is 58 ns (typ.) at I_F = 10 A and di/dt = 100 A/μs. In synchronous rectifier applications, low t_rr minimizes overlap conduction loss during dead-time, reduces EMI from diode snap-off, and prevents shoot-through risk when gate timing is tightly controlled - all critical for achieving >96 % efficiency in high-frequency (>300 kHz) DC/DC converters.

SIDR680DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 32.8A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5150 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR680DP-T1-RE3 FAQ

1.How can I place an order for SIDR680DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR680DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR680DP-T1-RE3 reliable?

The price and inventory of SIDR680DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR680DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR680DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR680DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR680DP-T1-RE3?

SIDR680DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR680DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR680DP-T1-RE3?

For technical support, including SIDR680DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR680DP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR680DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR680DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR680DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR680DP-T1-RE3?

All SIDR680DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR680DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR680DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR680DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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