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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE800DF-T1-E3

Name: SIE800DF-T1-E3
Brand: Vishay Siliconix
SKU: SIE800DF-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE800DF-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (S)

Datasheet:: SIE800DF-T1-E3.pdf

Description:: MOSFET N-CH 30V 50A 10POLARPAK

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Product details

Overview

SIE800DF-T1-E3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a PolarPAK® package, featuring R_DS(on) = 0.0072 Ω at V_GS = 10 V, Q_g = 12–18 nC (V_GS = 4.5 V), and 50 A package-limited continuous drain current - optimized for high-side DC/DC conversion and synchronous rectification in VRM applications.

For engineers reviewing the SIE800DF-T1-E3 datasheet, SIE800DF-T1-E3 pinout, SIE800DF-T1-E3 application, or SIE800DF-T1-E3 equivalent, key selection criteria include ultra-low Q_gd/Q_gs ratio for shoot-through prevention, double-sided cooling capability via top-exposed drain terminals, and 100% R_g and UIS tested reliability.

Technical Context

This MOSFET employs Vishay's TrenchFET® silicon process with a leadframe-based PolarPAK® package where the top surface connects directly to pins 1, 5, 6, and 10 (all drain terminals), enabling low thermal resistance: R_thJC(Drain) = 1.0–1.2 °C/W (steady state). The gate drive architecture delivers fast switching with t_d(on) = 15–30 ns and t_f = 8–15 ns under standard test conditions.

It supports operation across –55 °C to +150 °C junction temperature range, with V_GS(th) = 1.5–3.0 V and guaranteed ±20 V gate-source voltage rating. Body diode characteristics include V_SD = 0.8–1.2 V at I_S = 10 A and t_rr = 45–70 ns, making it suitable for hard-switched and synchronous rectifier topologies requiring controlled reverse recovery.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on)	0.0072 Ω @ V_GS = 10 V - enables <1 W conduction loss at 50 A in high-current VRM phases
I_D (Package Limit)	50 A - thermal limit defined by PolarPAK® package construction on 1" × 1" FR4 board
Q_g	12–18 nC @ V_GS = 4.5 V - low gate charge supports efficient 500 kHz+ switching with standard gate drivers
Q_gd/Q_gs Ratio	Low - minimizes risk of shoot-through during high dv/dt transitions in half-bridge configurations
R_thJC (Drain)	1.0–1.2 °C/W - enables direct heatsinking to PCB copper or external cooler via top-exposed drain pads
V_GS(th)	1.5–3.0 V - compatible with 3.3 V and 5 V logic-level gate drive without level shifting

Pinout & Package

The SIE800DF-T1-E3 uses the leadless PolarPAK® package (package drawing doc# 73398), with top-exposed drain terminals enabling double-sided cooling. The package has 10 terminals arranged in two rows; pins 1, 5, 6, and 10 are internally connected to the drain, while pins 2, 3, 4, 7, 8, and 9 form source connections, and pin 9 serves as the gate terminal.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (D)	Top-exposed copper pads - primary thermal path to heatsink or PCB copper; electrically tied together
2, 3, 4, 7, 8	Source (S)	Bottom-side solderable terminals - provide low-inductance return path and thermal conduction to PCB
9	Gate (G)	Single dedicated gate input - isolated from drain/source; requires <20 V max drive per absolute ratings

Key Features

Feature	Design Value
Ultra-low Q_gd	3 nC - reduces Miller-induced turn-on risk and switching losses in high-frequency converters
Double-sided cooling	Top-exposed drain + bottom-source layout - enables <1.2 °C/W junction-to-case (drain) thermal path
100% R_g tested	Gate resistance 1.3–1.95 Ω - ensures consistent gate drive timing and EMI control across production lots
100% UIS tested	Unclamped inductive switching validated to 40 A avalanche current - guarantees ruggedness in hard-switched topologies
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports green manufacturing and end-of-life compliance

Applications

VRM Power Stage	High-Side DC/DC Switch
Use Scenario: High-current CPU/GPU voltage regulation module delivering up to 100 A per phase at ≤1.2 V output. IC Role / Device Role / Timing Role: High-side synchronous MOSFET switching at 300–1000 kHz with precise dead-time control. Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses; top-exposed drain allows direct thermal interface to VRM heatsink.	Use Scenario: Primary-side switch in isolated 24 V input telecom DC/DC converter with 48 V output. IC Role / Device Role / Timing Role: High-side switch in active-clamp forward or LLC resonant topology. Use Value: 30 V V_DS rating supports 24 V bus with margin; low Q_gd/Q_gs prevents false turn-on during high dv/dt transitions.
Synchronous Rectifier	Industrial Motor Drive Half-Bridge
Use Scenario: Secondary-side rectification in 12 V output server PSUs operating at 500 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in center-tapped or LLC secondary. Use Value: V_SD = 0.8–1.2 V and t_rr = 45–70 ns reduce reverse recovery loss vs. discrete diodes; 50 A package rating supports peak currents.	Use Scenario: Half-bridge leg in 24 V BLDC motor controller for factory automation equipment. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter driving 1–3 kW motors. Use Value: Robust UIS rating (40 A, 80 mJ) withstands inductive kickback; –55 °C to +150 °C rating supports industrial ambient conditions.

VRM Power Stage

High-Side DC/DC Switch

Use Scenario: High-current CPU/GPU voltage regulation module delivering up to 100 A per phase at ≤1.2 V output.

IC Role / Device Role / Timing Role: High-side synchronous MOSFET switching at 300–1000 kHz with precise dead-time control.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses; top-exposed drain allows direct thermal interface to VRM heatsink.

Use Scenario: Primary-side switch in isolated 24 V input telecom DC/DC converter with 48 V output.

IC Role / Device Role / Timing Role: High-side switch in active-clamp forward or LLC resonant topology.

Use Value: 30 V V_DS rating supports 24 V bus with margin; low Q_gd/Q_gs prevents false turn-on during high dv/dt transitions.

Synchronous Rectifier

Industrial Motor Drive Half-Bridge

Use Scenario: Secondary-side rectification in 12 V output server PSUs operating at 500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in center-tapped or LLC secondary.

Use Value: V_SD = 0.8–1.2 V and t_rr = 45–70 ns reduce reverse recovery loss vs. discrete diodes; 50 A package rating supports peak currents.

Use Scenario: Half-bridge leg in 24 V BLDC motor controller for factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter driving 1–3 kW motors.

Use Value: Robust UIS rating (40 A, 80 mJ) withstands inductive kickback; –55 °C to +150 °C rating supports industrial ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	30 V, R_DS(on) = 0.0058 Ω @ 10 V, Q_g = 22 nC, PowerPAK® SO-8 package	Higher gate charge increases driver loss; no top-side cooling - less effective for >40 A thermal management	Prefer when board space favors SO-8 footprint and thermal load is lower
IRF7470PBF	30 V, R_DS(on) = 0.0075 Ω @ 10 V, Q_g = 28 nC, SO-8 package, no UIS rating specified	Higher Q_g and untested UIS reduce robustness in hard-switched or inductive loads	Consider only for cost-sensitive, low-reliability consumer applications with soft-switching

Compared with SiR872DP-T1-GE3 and IRF7470PBF, the SIE800DF-T1-E3 offers superior thermal performance via PolarPAK® double-sided cooling and verified UIS ruggedness - critical for high-current VRM and industrial motor drive designs where thermal headroom and fault tolerance are non-negotiable.

Availability

SIE800DF-T1-E3 is available at Aetrix Electronics and suitable for VRM power stages, high-side DC/DC switches, and synchronous rectifiers requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for SIE800DF-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIE800DF-T1-E3 belongs to Vishay's PolarPAK® TrenchFET® family, engineered specifically for high-current, high-frequency power conversion where thermal management and switching integrity are critical - targeting server VRMs, telecom DC/DC, and industrial motor drives.

FAQ

What is the maximum continuous drain current rating for the SIE800DF-T1-E3?

The SIE800DF-T1-E3 has a silicon-limited continuous drain current of 90 A at T_J = 150 °C, but its package-limited rating is 50 A at T_C = 25 °C. This 50 A value reflects thermal constraints of the PolarPAK® package on a standard 1" × 1" FR4 board and is the practical design limit for sustained operation without additional heatsinking.

Does the SIE800DF-T1-E3 support logic-level gate drive?

Yes, the SIE800DF-T1-E3 supports logic-level gate drive with V_GS(th) = 1.5–3.0 V and specified R_DS(on) down to 0.0115 Ω at V_GS = 4.5 V. This enables direct interfacing with 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry, simplifying high-frequency synchronous rectifier and VRM designs.

How is thermal management implemented in the SIE800DF-T1-E3 package?

The SIE800DF-T1-E3 uses Vishay's PolarPAK® package with top-exposed drain terminals (pins 1, 5, 6, 10) that serve as primary thermal paths. Its R_thJC(Drain) = 1.0–1.2 °C/W (steady state) allows direct attachment to heatsinks or thick copper planes, while bottom-side source terminals provide secondary conduction - enabling true double-sided cooling not possible with standard SO-8 or PowerPAK® packages.

Is the SIE800DF-T1-E3 suitable for synchronous rectification applications?

Yes, the SIE800DF-T1-E3 is explicitly qualified for synchronous rectification, with body diode parameters including V_SD = 0.8–1.2 V at I_S = 10 A and t_rr = 45–70 ns. Its low Q_gd/Q_gs ratio and 100% UIS testing ensure reliable operation in hard-commutated secondary-side topologies common in high-efficiency server PSUs and telecom DC/DC converters.

What does the "-T1-E3" suffix indicate in SIE800DF-T1-E3?

"-T1" denotes tape-and-reel packaging (1,000 units per reel), and "-E3" specifies lead (Pb)-free termination with matte tin plating, compliant with RoHS Directive 2002/95/EC. This suffix confirms the part meets environmental requirements for modern electronics manufacturing without compromising solderability or reliability.

SIE800DF-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (S)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (S)

SIE800DF-T1-E3 FAQ

1.How can I place an order for SIE800DF-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE800DF-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE800DF-T1-E3 reliable?

The price and inventory of SIE800DF-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE800DF-T1-E3 is usually 5 days.

3.What payment methods are accepted for SIE800DF-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE800DF-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE800DF-T1-E3?

SIE800DF-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE800DF-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE800DF-T1-E3?

For technical support, including SIE800DF-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE800DF-T1-E3 requirements.

6.How does Aetrix verify that SIE800DF-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SIE800DF-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE800DF-T1-E3 meets industry standards.

7.What is the process for return or replacement of SIE800DF-T1-E3?

All SIE800DF-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE800DF-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE800DF-T1-E3 part is unused and in its original packaging.

Return procedure for SIE800DF-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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