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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE800DF-T1-GE3

Name: SIE800DF-T1-GE3
Brand: Vishay Siliconix
SKU: SIE800DF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE800DF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (S)

Datasheet:: SIE800DF-T1-GE3.pdf

Description:: MOSFET N-CH 30V 50A 10POLARPAK

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Product details

Overview

SIE800DF-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a leadframe-based PolarPAK® package, delivering R_DS(on) = 0.0072 Ω at V_GS = 10 V, Q_g = 35 nC (typ.), and 50 A continuous drain current (package-limited), optimized for high-side DC/DC conversion and synchronous rectification in VRM applications.

For engineers reviewing the SIE800DF-T1-GE3 datasheet, SIE800DF-T1-GE3 pinout, SIE800DF-T1-GE3 application, or SIE800DF-T1-GE3 equivalent, key selection criteria include its ultra-low thermal resistance (R_thJC(Drain) = 1.2 °C/W max), halogen-free and RoHS-compliant construction, double-sided cooling capability, and low Q_gd/Q_gs ratio to prevent shoot-through in high-frequency switching topologies.

Technical Context

This MOSFET employs trench-gate silicon technology with a top-exposed drain-connected PolarPAK® package enabling direct thermal path to heatsink or PCB copper. Its gate charge profile (Q_gd = 3 nC typ., Q_gs = 5.6 nC) and low output capacitance (C_oss = 750 pF) support fast, efficient hard-switching up to several hundred kHz.

The device features a 1.5–3.0 V gate threshold voltage (V_GS(th)) with negative temperature coefficient, stable R_DS(on) over -55 to 150 °C junction range, and 100 % R_g and UIS tested-ensuring robustness in transient-loaded VRM and point-of-load converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on)	0.0072 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A in high-current VRM phases
I_D (cont.)	50 A (package-limited) - Sustained current rating on 1" × 1" FR4 board per JEDEC standards
Q_g	35 nC (typ.) @ V_DS = 15 V - Determines gate drive power and switching speed in synchronous buck controllers
R_thJC (Drain)	1.2 °C/W (max) - Enables >100 W power dissipation with minimal case-to-heatsink ΔT
C_oss	750 pF - Reduces turn-off energy and improves light-load efficiency in resonant topologies
V_GS(th)	1.5–3.0 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers

Pinout & Package

The SIE800DF-T1-GE3 uses the PolarPAK® package-a leadless, top-exposed, die-encapsulated structure where the top metal surface is electrically connected to pins 1, 5, 6, and 10 (all Drain terminals). The package supports double-sided cooling and eliminates die exposure while maintaining consistent layout across die sizes.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (D)	Top-exposed copper pad tied to internal drain metallization; primary thermal and current path to heatsink or PCB plane
2, 3, 4, 7, 8, 9	Source (S)	Bottom-side solderable terminals forming low-inductance source return path; six parallel connections reduce R_DS(on) contribution
11	Gate (G)	Single dedicated gate terminal with R_g = 1.95 Ω (max); isolated from drain/source to prevent coupling during fast dV/dt transitions

Key Features

Feature	Design Value
Ultra-low Q_gd	3 nC typical - Minimizes Miller-induced switching delay and reduces risk of cross-conduction in half-bridge configurations
PolarPAK® double-sided cooling	Top-drain + bottom-source layout - Enables simultaneous thermal interface to heatsink (top) and PCB copper (bottom), cutting total R_thJA to 24 °C/W max
Low Q_gd/Q_gs ratio	~0.54 (3/5.6) - Improves gate control margin and suppresses shoot-through during high-dV/dt transitions
100 % R_g and UIS tested	Guaranteed gate resistance and unclamped inductive switching robustness - Eliminates screening failures in production and ensures field reliability under overload
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - Supports environmentally regulated industrial and telecom end equipment

Applications

VRM Power Stage	High-Side DC/DC Switch
Use Scenario: High-current, multi-phase voltage regulator module supplying CPU/GPU core power in servers and workstations. IC Role / Device Role / Timing Role: High-side synchronous switch in interleaved buck converter, operating at 300–600 kHz with precise dead-time control. Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 100 A load while maintaining tight thermal margins.	Use Scenario: Primary switching element in isolated or non-isolated 12 V–1 V point-of-load (POL) converters for FPGA and ASIC power rails. IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap gate driver, handling peak currents up to 50 A. Use Value: Ultra-low R_thJC allows direct mounting to heatsink, reducing junction temperature rise by >25 °C vs. standard SO-8, extending lifetime under sustained load.
Synchronous Rectifier	Power ORing Circuit
Use Scenario: Secondary-side switch in 48 V–12 V LLC or phase-shifted full-bridge converters for telecom rectifiers and data center PSUs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, controlled by transformer-sense or dedicated controller timing signals. Use Value: 0.0115 Ω R_DS(on) @ 4.5 V enables >30 mV forward drop reduction vs. 40 V Schottky, improving full-load efficiency by 0.8–1.2 %.	Use Scenario: Back-to-back configuration in redundant 12 V power distribution for industrial PLCs and network switches. IC Role / Device Role / Timing Role: Low-loss, bidirectional blocking switch used in ideal diode IC replacement circuits with external gate control. Use Value: Low V_SD (0.8–1.2 V) and fast trr (45–70 ns) ensure minimal reverse recovery loss and low forward conduction loss during hot-swap transitions.

VRM Power Stage

High-Side DC/DC Switch

Use Scenario: High-current, multi-phase voltage regulator module supplying CPU/GPU core power in servers and workstations.

IC Role / Device Role / Timing Role: High-side synchronous switch in interleaved buck converter, operating at 300–600 kHz with precise dead-time control.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 100 A load while maintaining tight thermal margins.

Use Scenario: Primary switching element in isolated or non-isolated 12 V–1 V point-of-load (POL) converters for FPGA and ASIC power rails.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap gate driver, handling peak currents up to 50 A.

Use Value: Ultra-low R_thJC allows direct mounting to heatsink, reducing junction temperature rise by >25 °C vs. standard SO-8, extending lifetime under sustained load.

Synchronous Rectifier

Power ORing Circuit

Use Scenario: Secondary-side switch in 48 V–12 V LLC or phase-shifted full-bridge converters for telecom rectifiers and data center PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, controlled by transformer-sense or dedicated controller timing signals.

Use Value: 0.0115 Ω R_DS(on) @ 4.5 V enables >30 mV forward drop reduction vs. 40 V Schottky, improving full-load efficiency by 0.8–1.2 %.

Use Scenario: Back-to-back configuration in redundant 12 V power distribution for industrial PLCs and network switches.

IC Role / Device Role / Timing Role: Low-loss, bidirectional blocking switch used in ideal diode IC replacement circuits with external gate control.

Use Value: Low V_SD (0.8–1.2 V) and fast trr (45–70 ns) ensure minimal reverse recovery loss and low forward conduction loss during hot-swap transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	Higher R_DS(on) (0.0085 Ω @ 10 V), same PolarPAK® footprint but different pinout (gate on pin 12); C_iss = 1750 pF	Compatible in VRM but requires gate driver layout revision due to shifted gate pin; higher switching loss at >500 kHz	Select when legacy IR design reuse is prioritized and thermal budget allows +15 % R_DS(on)
SIS840DT-T1-GE3	Same manufacturer, lower voltage (25 V), lower R_DS(on) (0.0055 Ω @ 10 V), identical PolarPAK® pinout and thermal performance	Better suited for 5 V–12 V input POLs; not rated for 30 V bus transients in 24 V systems	Choose for cost-sensitive 12 V input designs where 30 V V_DS margin is unnecessary

Compared with IRF6642TRPBF and SIS840DT-T1-GE3, the SIE800DF-T1-GE3 provides optimal balance of 30 V rating, ultra-low Q_gd, and validated double-sided cooling-making it preferred for high-efficiency, thermally constrained VRM and high-side DC/DC stages where shoot-through immunity and thermal headroom are critical.

Availability

SIE800DF-T1-GE3 is available at Aetrix Electronics and suitable for VRM power stages, high-side DC/DC conversion, and synchronous rectification requiring stable component supply, halogen-free compliance, and repeatable thermal performance across production batches.

Supply support for SIE800DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal management, and reliability.

The PolarPAK® product line was developed to deliver superior thermal performance in space-constrained power conversion, targeting server VRMs, telecom PSUs, and industrial POL modules where double-sided cooling and low-profile packaging are essential.

FAQ

What is the maximum continuous drain current rating for the SIE800DF-T1-GE3?

The SIE800DF-T1-GE3 has a silicon-limited continuous drain current of 90 A at T_J = 150 °C, but its package-limited rating is 50 A under standard JEDEC test conditions (surface-mounted on 1" × 1" FR4 board). This 50 A value defines the practical steady-state current limit for most PCB-mounted applications without additional heatsinking.

Does the SIE800DF-T1-GE3 support gate drive from a 3.3 V controller?

Yes, the SIE800DF-T1-GE3 specifies R_DS(on) = 0.0115 Ω at V_GS = 4.5 V and operates reliably down to V_GS(th) = 1.5 V min. While 3.3 V is below the 4.5 V test condition, it remains above threshold and delivers usable R_DS(on) (~0.014–0.016 Ω estimated), making it compatible with 3.3 V gate drivers in moderate-current applications where slight conduction loss increase is acceptable.

How does the PolarPAK® package of the SIE800DF-T1-GE3 improve thermal performance?

The PolarPAK® package of the SIE800DF-T1-GE3 features a top-exposed drain pad and bottom-source terminals, enabling simultaneous thermal paths to both a heatsink (top) and PCB copper (bottom). With R_thJC(Drain) = 1.2 °C/W max and R_thJC(Source) = 3.4 °C/W, this dual-interface design achieves significantly lower total thermal resistance than conventional SO-8 or PowerPAK® packages-critical for high-power density VRM phases.

Is the SIE800DF-T1-GE3 suitable for synchronous rectification in LLC resonant converters?

Yes, the SIE800DF-T1-GE3 is well-suited for synchronous rectification in LLC resonant converters due to its low body diode V_SD (0.8–1.2 V), fast reverse recovery time (t_rr = 45–70 ns), and low Q_rr (41–65 nC). These characteristics reduce dead-time losses and improve light-load efficiency compared to Schottky diodes, especially in 48 V–12 V secondary-side applications.

What is the gate resistance specification for the SIE800DF-T1-GE3, and why does it matter?

The SIE800DF-T1-GE3 has a specified gate resistance R_g of 1.3–1.95 Ω (measured at 1 MHz). This intrinsic resistance helps dampen gate ringing, reduces EMI during fast switching, and simplifies gate driver design by lowering sensitivity to PCB layout parasitics-particularly valuable in high-density, high-frequency VRM layouts where gate waveform integrity directly impacts efficiency and reliability.

SIE800DF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (S)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (S)

SIE800DF-T1-GE3 FAQ

1.How can I place an order for SIE800DF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE800DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE800DF-T1-GE3 reliable?

The price and inventory of SIE800DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE800DF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIE800DF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE800DF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE800DF-T1-GE3?

SIE800DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE800DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE800DF-T1-GE3?

For technical support, including SIE800DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE800DF-T1-GE3 requirements.

6.How does Aetrix verify that SIE800DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIE800DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE800DF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIE800DF-T1-GE3?

All SIE800DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE800DF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE800DF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIE800DF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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