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Vishay Siliconix SIE802DF-T1-E3
- Part No.:
- SIE802DF-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 10-PolarPAK® (L)
- Datasheet:
-
SIE802DF-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 60A 10POLARPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,025
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Product details
Overview
SIE802DF-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Gen II Power MOSFET in a PolarPAK® package, delivering 60 A continuous drain current (package-limited), RDS(on) = 0.0019 Ω at VGS = 10 V, and Qg = 105 nC (typ.), optimized for low-side DC/DC conversion and synchronous rectification in high-current VRM applications.
For engineers reviewing the SIE802DF-T1-E3 datasheet, SIE802DF-T1-E3 pinout, SIE802DF-T1-E3 application, or SIE802DF-T1-E3 equivalent, key selection criteria include its ultra-low thermal resistance (RthJC = 0.8 °C/W to drain top), double-sided cooling capability, and low Qgd/Qgs ratio engineered to prevent shoot-through in high-frequency switching circuits.
Technical Context
This MOSFET employs TrenchFET® Gen II silicon technology with a trench-gate structure enabling high cell density and low on-resistance. Its PolarPAK® Option L package uses a leadframe-based encapsulation where the top surface (drain) is electrically connected to pins 1, 5, 6, and 10, enabling direct thermal path to heatsink or PCB copper.
The device features 100% Rg and UIS testing, halogen-free construction per IEC 61249-2-21, and RoHS compliance. Gate threshold voltage is specified at 1.5–2.7 V, with guaranteed avalanche energy of 125 mJ and body diode reverse recovery time of 55–85 ns at 10 A/100 A/µs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V input systems. |
| RDS(on) | 0.0019 Ω at VGS = 10 V - Enables <1.9 mΩ conduction loss at 23.6 A, critical for minimizing I²R losses in high-current power stages. |
| ID (cont.) | 60 A (package-limited) - Thermal design must accommodate 80 W max power dissipation at TC = 70 °C. |
| Qg | 105 nC (typ.) - Total gate charge determines drive strength requirement; lower Qg enables faster switching with reduced driver loss. |
| RthJC (Drain) | 0.8 °C/W (typ.) - Enables efficient double-sided cooling; top-side drain connection allows direct thermal interface to heatsink or thermal pad. |
| Qgd/Qgs | Low ratio - Reduces risk of unintended turn-on during high dV/dt transitions, improving reliability in hard-switched topologies. |
| VGS(th) | 1.5–2.7 V - Compatible with standard 3.3 V and 5 V gate drivers; ensures robust turn-on margin under temperature variation. |
Pinout & Package
PolarPAK® Option L is a 10-pin, leadless, surface-mount package with exposed drain on the top surface connected to pins 1, 5, 6, and 10. The bottom side contains source (pins 2, 3, 4, 7, 8, 9) and gate (pin 5). Package dimensions: 6.15 mm × 5.16 mm × 0.80 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 6, 10 | Drain (D) | Top-surface exposed copper; primary thermal and current path to heatsink or thermal plane. |
| 2, 3, 4, 7, 8, 9 | Source (S) | Bottom-side terminals; provide low-inductance return path and thermal conduction to PCB copper. |
| 5 | Gate (G) | Single gate input; pin 5 serves dual role as gate and drain - requires careful layout isolation to avoid coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RthJC (Drain) | 0.8 °C/W typical - enables >125 W/cm² power density when mounted to heatsink, supporting compact VRM designs. |
| Double-sided cooling architecture | Top-exposed drain + bottom-source terminals - allows simultaneous thermal management from both PCB and heatsink sides. |
| Low Qgd/Qgs ratio | Reduces Miller-induced gate oscillation - improves stability in high dV/dt synchronous buck converters without added gate resistors. |
| 100% Rg and UIS tested | Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world power stage faults. |
| TrenchFET® Gen II silicon | Delivers higher cell density than planar MOSFETs - achieves 0.0019 Ω RDS(on) in small footprint without compromising SOA or avalanche rating. |
Applications
| VRM Power Stage | High-Current DC/DC Converter |
|---|---|
Use Scenario: Voltage regulator module supplying CPU/GPU core power in servers and AI accelerators requiring >200 A total output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with fast turn-off to minimize body diode conduction loss. Use Value: 0.0019 Ω RDS(on) reduces conduction loss by >30% vs. comparable 30 V MOSFETs, directly improving efficiency at 100+ A load currents. | Use Scenario: 12 V to 1 V step-down converter in telecom base station power supplies with strict thermal constraints. IC Role / Device Role / Timing Role: Primary low-side switch in multiphase buck topology, leveraging double-sided cooling to maintain TJ < 125 °C under full load. Use Value: 0.8 °C/W RthJC enables 80 W dissipation at 70 °C case temperature - eliminates need for external heatsink in space-constrained modules. |
| Synchronous Rectification | Industrial Motor Drive Inverter |
Use Scenario: Secondary-side rectification in isolated 48 V–12 V DC/DC converters for data center power distribution. IC Role / Device Role / Timing Role: High-efficiency replacement for Schottky diodes, driven by controller with precise timing to avoid shoot-through. Use Value: Low Qgd/Qgs ratio ensures clean turn-off edge even with aggressive gate drive, reducing cross-conduction losses by up to 40%. | Use Scenario: Half-bridge leg in 24 V BLDC motor drive for factory automation equipment requiring high peak current capability. IC Role / Device Role / Timing Role: Low-side switch handling pulsed currents up to 100 A (IDM) during motor commutation events. Use Value: 125 mJ avalanche energy rating provides robustness against inductive kickback without external snubbers, simplifying BOM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(on) = 0.0022 Ω @ 10 V; Qg = 62 nC; PQFN 5×6 mm package with bottom-side drain. | Lower gate charge but higher RDS(on); single-sided cooling only - less effective in high-power density layouts. | Prefer IRF6642TRPBF when gate drive power is limiting and thermal headroom exists; not drop-in due to different pinout and thermal path. |
| NTMFS4C09NT1G | RDS(on) = 0.0017 Ω @ 10 V; Qg = 110 nC; SO-8FL package with top-side drain and 4.5 mm × 5.3 mm footprint. | Marginally lower RDS(on) but larger RthJA (35 °C/W); no double-sided cooling - relies on PCB copper for heat spreading. | Choose NTMFS4C09NT1G if board-level thermal design prioritizes simplicity over peak power density; requires layout revision. |
Compared with SIE802DF-T1-E3, IRF6642TRPBF offers lower gate drive loss but sacrifices thermal performance and shoot-through immunity, while NTMFS4C09NT1G trades marginal RDS(on) improvement for significantly reduced thermal efficiency and no top-side cooling capability - making SIE802DF-T1-E3 optimal for space- and thermally constrained high-current VRMs.
Availability
SIE802DF-T1-E3 is available at Aetrix Electronics and suitable for VRM power stages, high-current DC/DC converters, and synchronous rectification circuits requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIE802DF-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal management, and reliability.
The PolarPAK® product line was developed specifically for high-current, high-efficiency power conversion applications where thermal density and switching speed are critical - targeting server VRMs, telecom DC/DC, and industrial motor drives.
FAQ
What is the maximum continuous drain current rating for SIE802DF-T1-E3 under real-world PCB conditions?
The SIE802DF-T1-E3 has a silicon-limited continuous drain current of 202 A, but its package-limited rating is 60 A when mounted on a 1" × 1" FR4 board at TC = 25 °C. At TC = 70 °C, the derated value remains 60 A - this reflects the thermal limit of the PolarPAK® package itself, not the silicon. For higher current operation, forced-air cooling or heatsink attachment to the top-side drain is required. The SIE802DF-T1-E3 datasheet specifies 60 A as the absolute continuous limit under standard test conditions.
Does SIE802DF-T1-E3 support gate drive voltages below 4.5 V, and what is its RDS(on) at VGS = 4.5 V?
Yes, the SIE802DF-T1-E3 is fully characterized down to VGS = 4.5 V. Its RDS(on) is 0.0026 Ω (max) at VGS = 4.5 V and ID = 21.3 A, with a typical value of 0.0021 Ω. This makes the SIE802DF-T1-E3 compatible with 3.3 V and 5 V gate drivers commonly used in modern digital power controllers. The gate threshold voltage range of 1.5–2.7 V ensures reliable turn-on even with driver voltage tolerances and PCB trace drops.
How does the PolarPAK® package of SIE802DF-T1-E3 differ from standard QFN or SO-8 packages in thermal performance?
The PolarPAK® package used in SIE802DF-T1-E3 features a top-exposed drain connected to pins 1, 5, 6, and 10, enabling direct thermal interface to a heatsink or cold plate - unlike standard QFN or SO-8 packages that rely solely on bottom-side conduction. This yields a typical RthJC (drain) of 0.8 °C/W, compared to >2.5 °C/W for most 5×6 mm QFNs. The SIE802DF-T1-E3 thus supports double-sided cooling, allowing >2× the power dissipation of conventional packages at the same footprint.
Is SIE802DF-T1-E3 suitable for avalanche-rated applications, and what is its rated avalanche energy?
Yes, the SIE802DF-T1-E3 is 100% tested for unclamped inductive switching (UIS) and rated for single-pulse avalanche energy of 125 mJ at TJ = 25 °C. It also supports a single-pulse avalanche current of 50 A with L = 0.1 mH. This ruggedness makes the SIE802DF-T1-E3 appropriate for inductive load switching, motor drive half-bridges, and fault-tolerant DC/DC designs where transient overvoltage events may occur. The SIE802DF-T1-E3 datasheet confirms these values in the Absolute Maximum Ratings table.
What is the recommended PCB pad layout for SIE802DF-T1-E3 to ensure reliable soldering and thermal performance?
Vishay recommends using the minimum pad dimensions specified in Application Note 826 (Document #73491): 0.510 mm wide × 0.955 mm long for drain pads (pins 1, 5, 6, 10), and 0.510 mm × 0.580 mm for source pads (pins 2, 3, 4, 7, 8, 9), with gate pad (pin 5) sized at 0.410 mm × 0.510 mm. No external traces should enter the broken-line keep-out zone. The SIE802DF-T1-E3 requires reflow per JEDEC J-STD-020 profile (peak 260 °C); manual soldering is not recommended due to its leadless construction and exposed copper singulation edges.
SIE802DF-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 10-PolarPAK® (L)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.9mOhm @ 23.6A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 160 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-PolarPAK® (L)
SIE802DF-T1-E3 FAQ
1.How can I place an order for SIE802DF-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIE802DF-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIE802DF-T1-E3 reliable?
The price and inventory of SIE802DF-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE802DF-T1-E3 is usually 5 days.
3.What payment methods are accepted for SIE802DF-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE802DF-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIE802DF-T1-E3?
SIE802DF-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIE802DF-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIE802DF-T1-E3?
For technical support, including SIE802DF-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE802DF-T1-E3 requirements.
6.How does Aetrix verify that SIE802DF-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SIE802DF-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE802DF-T1-E3 meets industry standards.
7.What is the process for return or replacement of SIE802DF-T1-E3?
All SIE802DF-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE802DF-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIE802DF-T1-E3 part is unused and in its original packaging.
Return procedure for SIE802DF-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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