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Vishay Siliconix SIE802DF-T1-GE3
- Part No.:
- SIE802DF-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 10-PolarPAK® (L)
- Datasheet:
-
SIE802DF-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 60A 10POLARPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,398
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Product details
Overview
SIE802DF-T1-GE3 from Vishay Siliconix is an N-channel 30-V (D-S) TrenchFET® Gen II Power MOSFET in a PolarPAK® package, delivering RDS(on) = 0.0019 Ω at VGS = 10 V, 202 A silicon-limited continuous drain current, and 50 nC total gate charge - optimized for high-efficiency low-side switching in VRM and synchronous rectification circuits.
For engineers reviewing the SIE802DF-T1-GE3 datasheet, SIE802DF-T1-GE3 pinout, SIE802DF-T1-GE3 application, or SIE802DF-T1-GE3 equivalent, key selection criteria include its ultra-low thermal resistance (RthJC = 0.8 °C/W to drain top), double-sided cooling capability, halogen-free and RoHS-compliant construction, and validated 100 % Rg and UIS testing.
Technical Context
This MOSFET employs trench-based silicon architecture with optimized gate charge ratio (Qgd/Qgs) to suppress shoot-through in high-frequency synchronous buck converters. Its PolarPAK® package features top-exposed drain terminals (pins 1, 5, 6, 10) for direct thermal interface and bottom-side source/ground connections.
The device operates within -55 °C to +150 °C junction temperature range, supports ±20 V gate drive, and exhibits body diode reverse recovery time (trr) of 55–85 ns at IF = 10 A and dI/dt = 100 A/µs - enabling fast commutation in DC/DC power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 24-V input bus systems. |
| RDS(on) | 0.0019 Ω @ VGS = 10 V - Enables <1.9 mΩ conduction loss at 23.6 A, critical for minimizing I²R losses in high-current VRMs. |
| ID (Silicon Limit) | 202 A - Highest-rated current capability among Vishay's 30-V PolarPAK devices, supporting multi-phase CPU/GPU power delivery. |
| Qg | 50–75 nC @ VGS = 4.5 V - Low gate charge enables efficient drive with standard PWM controllers without requiring external gate drivers. |
| RthJC (Drain) | 0.8 °C/W (typ.) - Ultra-low junction-to-case thermal resistance allows direct heatsink mounting on top surface for dual-side cooling. |
| trr | 55–85 ns - Fast body diode recovery reduces switching loss and EMI in synchronous rectifier operation. |
| VGS(th) | 1.5–2.7 V - Tight threshold voltage distribution ensures consistent turn-on behavior across temperature and unit-to-unit variation. |
Pinout & Package
PolarPAK® Option L package: 10-terminal leadless surface-mount package with top-exposed drain pads (pins 1, 5, 6, 10) and bottom-side source/gate terminals. Dimensions: 6.15 mm × 5.16 mm × 0.80 mm (L × W × H). Designed for double-sided thermal management and high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 6, 10 | Drain (D) | Top-surface exposed copper pads - primary thermal path to heatsink; electrically tied to internal die drain. |
| 2, 3, 7, 8, 9 | Source (S) | Bottom-side copper terminals - provide low-inductance return path and secondary thermal conduction to PCB ground plane. |
| 4 | Gate (G) | Isolated control terminal - requires <2.7 V threshold to initiate conduction; routed with controlled impedance to minimize ringing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen II silicon | Delivers 0.0019 Ω RDS(on) at 10 V while maintaining robust avalanche energy rating (EAS = 125 mJ). |
| Ultra-low RthJC (Drain) | 0.8 °C/W typical enables >125 W power dissipation with minimal case-to-heatsink ΔT - essential for compact VRM designs. |
| Low Qgd/Qgs ratio | Reduces Miller-induced gate oscillation during hard switching, improving reliability in high-dV/dt synchronous rectifier applications. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress - critical for automotive and server power supplies. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and EU Directive 2002/95/EC - required for green electronics certification in industrial and telecom equipment. |
Applications
| VRM Power Stage | Server DC/DC Converter |
|---|---|
Use Scenario: High-current voltage regulation module supplying CPU/GPU core power in enterprise servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with 200+ A peak current per phase. Use Value: 0.0019 Ω RDS(on) minimizes conduction loss at 200 A, reducing thermal load and enabling higher power density than comparable SO-8 devices. | Use Scenario: 12-V input to 0.8-V output point-of-load converter in AI accelerator racks. IC Role / Device Role / Timing Role: Primary low-side FET in multiphase buck topology with tight duty-cycle control and fast transient response. Use Value: 55 ns body diode trr and low Qgd suppress shoot-through and reduce switching loss, improving efficiency above 92 % at full load. |
| Telecom Rectification | Industrial Motor Drive Inverter |
Use Scenario: 48-V intermediate bus to 12-V conversion in 5G base station power subsystems. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated forward or LLC resonant converter. Use Value: Double-sided cooling via PolarPAK® top/bottom thermal paths maintains TJ < 125 °C under 60 A continuous load without forced air. | Use Scenario: Half-bridge low-side switch in 24-V BLDC motor driver for factory automation. IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive 100-A pulsed loads with 50-mJ avalanche energy absorption. Use Value: 125 mJ EAS rating and 100 % UIS testing ensure survival during motor stall or short-circuit events without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(on) = 0.0022 Ω @ 10 V; Qg = 44 nC; PQFN 5×6 mm package with single-side cooling only. | Lacks top-exposed drain; higher RthJC (1.2 °C/W) limits power density in thermally constrained layouts. | Prefer SIE802DF-T1-GE3 when double-sided cooling or >100 A continuous current is required. |
| NTMFS5C675NL | RDS(on) = 0.0017 Ω @ 10 V; Qg = 64 nC; SO-8FL package with 60 A package limit and no top thermal pad. | Lower RDS(on) but higher Qg increases drive loss; no top-side thermal interface restricts max power to ~65 W. | Choose SIE802DF-T1-GE3 for applications needing >80 W dissipation or board-level thermal stacking. |
Compared with IRF6642TRPBF and NTMFS5C675NL, the SIE802DF-T1-GE3 uniquely combines 202 A silicon current capability, 0.8 °C/W junction-to-drain thermal resistance, and halogen-free PolarPAK® construction - making it the only option qualified for high-power, double-sided cooled VRM and telecom rectifier designs where thermal headroom and long-term reliability are critical.
Availability
SIE802DF-T1-GE3 is available at Aetrix Electronics and suitable for VRM power stages, server DC/DC converters, and telecom rectification requiring stable component supply, extended lifecycle support, and traceable halogen-free sourcing.
Supply support for SIE802DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The PolarPAK® product line was developed specifically for high-current, low-voltage power conversion applications demanding ultra-low RDS(on), double-sided thermal management, and robust avalanche performance - targeting next-generation computing and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for SIE802DF-T1-GE3?
The SIE802DF-T1-GE3 has a silicon-limited continuous drain current of 202 A at TJ = 150 °C, but its package-limited rating is 60 A at TC = 25 °C. The actual usable current depends on thermal design: with effective double-sided cooling, sustained currents up to 173 A are achievable at VGS = 4.5 V per the product summary table. Always verify junction temperature using RthJC = 0.8 °C/W and ambient conditions.
Does SIE802DF-T1-GE3 support gate drive voltages below 4.5 V?
Yes - the SIE802DF-T1-GE3 specifies RDS(on) = 0.0026 Ω at VGS = 4.5 V and ID = 21.3 A, confirming full enhancement down to 4.5 V. Its VGS(th) range of 1.5–2.7 V ensures reliable turn-on with logic-level drivers. However, operation below 4.5 V increases RDS(on) nonlinearly and is not characterized in the datasheet; design margin should be applied for such use cases.
How is thermal management implemented in the PolarPAK® package of SIE802DF-T1-GE3?
The SIE802DF-T1-GE3 uses a dual-path thermal architecture: the top surface (pins 1, 5, 6, 10) is an exposed drain copper pad for direct heatsink attachment (RthJC(Drain) = 0.8 °C/W), while the bottom side (pins 2, 3, 7, 8, 9) provides source-terminal conduction to the PCB ground plane (RthJC(Source) = 2.2 °C/W). This enables simultaneous top- and bottom-side cooling - a key differentiator versus conventional QFN or SO-8 packages.
Is SIE802DF-T1-GE3 suitable for synchronous rectification in isolated DC/DC converters?
Yes - the SIE802DF-T1-GE3 is explicitly listed for synchronous rectification in its official applications. Its fast body diode (trr = 55–85 ns), low Qgd/Qgs ratio, and 100 % UIS testing make it well-suited for secondary-side switching in forward, flyback, and LLC converters. The 30-V VDS rating matches common 12-V and 24-V output rails, and its low RDS(on) directly improves system efficiency over Schottky diodes.
What does the "-GE3" suffix indicate in SIE802DF-T1-GE3?
The "-GE3" suffix in SIE802DF-T1-GE3 denotes compliance with both RoHS Directive 2002/95/EC and halogen-free requirements per IEC 61249-2-21. It distinguishes this variant from the "-E3" version (RoHS-compliant only). Both share identical electrical specifications and PolarPAK® packaging, but SIE802DF-T1-GE3 is certified for environmentally restricted applications requiring chlorine/bromine-free materials.
SIE802DF-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 10-PolarPAK® (L)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.9mOhm @ 23.6A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 160 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-PolarPAK® (L)
SIE802DF-T1-GE3 FAQ
1.How can I place an order for SIE802DF-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIE802DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIE802DF-T1-GE3 reliable?
The price and inventory of SIE802DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE802DF-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIE802DF-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE802DF-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIE802DF-T1-GE3?
SIE802DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIE802DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIE802DF-T1-GE3?
For technical support, including SIE802DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE802DF-T1-GE3 requirements.
6.How does Aetrix verify that SIE802DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIE802DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE802DF-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIE802DF-T1-GE3?
All SIE802DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE802DF-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIE802DF-T1-GE3 part is unused and in its original packaging.
Return procedure for SIE802DF-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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