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Vishay Siliconix SIE808DF-T1-GE3
- Part No.:
- SIE808DF-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 10-PolarPAK® (L)
- Datasheet:
-
SIE808DF-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 60A 10POLARPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,547
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Product details
Overview
SIE808DF-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Gen II Power MOSFET in a PolarPAK® package, delivering RDS(on) = 0.0016 Ω at VGS = 10 V and 220-A silicon-limited continuous drain current, optimized for low-side DC/DC conversion and synchronous rectification in high-current VRM applications.
For engineers reviewing the SIE808DF-T1-GE3 datasheet, SIE808DF-T1-GE3 pinout, SIE808DF-T1-GE3 application, or SIE808DF-T1-GE3 equivalent, key selection criteria include ultra-low thermal resistance (RthJC = 0.8 °C/W to drain top), halogen-free and RoHS-compliant construction, and validated 100% Rg and UIS testing for robust power switching reliability.
Technical Context
This MOSFET employs trench gate technology with a low Qgd/Qgs ratio to suppress shoot-through in high-frequency synchronous buck converters. Its PolarPAK® package features double-sided cooling via top-exposed drain terminals (pins 1, 5, 6, 10) and a leadframe-based encapsulation that isolates the die while maintaining consistent layout across die sizes.
The device operates with VGS(th) = 1.5–3.0 V, supports ±20-V gate drive, and exhibits Ciss = 8800 pF and Qg = 46 nC (at VGS = 4.5 V), enabling efficient gate driving in high-efficiency 48 V–12 V and 12 V–1 V point-of-load designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage for low-voltage synchronous rectifier operation |
| RDS(on) | 0.0016 Ω @ VGS = 10 V - Enables <1.6 mW conduction loss at 10 A, critical for high-current VRM efficiency |
| ID (Silicon Limit) | 220 A - Supports peak transient currents in server CPU/GPU VRMs without silicon saturation |
| Qg | 46 nC @ VGS = 4.5 V - Low gate charge reduces driver power loss and enables fast 55 ns rise time at 10 V drive |
| RthJC (Drain) | 0.8 °C/W - Enables direct heatsink mounting to top-side drain terminals for >100 W dissipation capability |
| VGS(th) | 1.5–3.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers in digital PWM controllers |
| Ciss | 8800 pF - High input capacitance mitigates dv/dt-induced false triggering in noisy high-dI/dt environments |
Pinout & Package
PolarPAK® Option L package: 10-terminal leadless surface-mount package with top-exposed drain terminals (pins 1, 5, 6, 10) for double-sided cooling; bottom-side source and gate connections; dimensions 6.15 mm × 5.16 mm × 0.80 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 6, 10 | Drain (D) | Top-exposed copper pads for direct thermal interface to heatsink; electrically tied to internal drain metallization |
| 2, 3, 7, 8, 9 | Source (S) | Bottom-side solderable terminals forming low-inductance source return path; connected to internal source bond wires |
| 4 | Gate (G) | Single dedicated gate input terminal; isolated from drain/source to prevent Miller-induced turn-on |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RthJC (Drain) | 0.8 °C/W enables >100 W power handling with top-side heatsinking-critical for compact VRM layouts |
| Low Qgd/Qgs ratio | Reduces risk of shoot-through during hard switching in synchronous rectifiers operating above 500 kHz |
| 100% Rg tested | Guarantees gate resistance ≤1.35 Ω, ensuring predictable gate drive timing and minimizing ringing |
| TrenchFET® Gen II architecture | Delivers 30% lower RDS(on) vs. prior generation at same die area-improving power density in POL converters |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and EU Directive 2002/95/EC for environmentally regulated industrial and computing applications |
Applications
| Server VRM | GPU Power Delivery |
|---|---|
Use Scenario: High-current voltage regulation for dual-socket Xeon processors in rack-mounted servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in multiphase buck converter, conducting during bottom-half of PWM cycle. Use Value: 0.0016 Ω RDS(on) minimizes conduction loss at 200+ A per phase, directly improving system efficiency by ≥0.8% at full load. | Use Scenario: Point-of-load regulation for NVIDIA A100 GPU memory and core rails. IC Role / Device Role / Timing Role: Primary low-side switch in 3-phase interleaved buck converter operating at 1 MHz. Use Value: 46 nC Qg at 4.5 V allows clean 55 ns rise time with minimal gate driver stress, sustaining high-frequency operation without excessive switching loss. |
| AI Accelerator POL | High-Density Telecom PSU |
Use Scenario: 0.8 V/300 A output stage in AI training cluster power supplies. IC Role / Device Role / Timing Role: Silicon-limited 220 A current-handling MOSFET used in parallel configurations for redundancy and thermal sharing. Use Value: 0.8 °C/W RthJC to drain top enables direct copper heatsink attachment, reducing junction temperature by 25 °C vs. standard SO-8 packages under identical conditions. | Use Scenario: Secondary-side synchronous rectification in 48 V–12 V intermediate bus converters for 5G base stations. IC Role / Device Role / Timing Role: Low-RDS(on) replacement for Schottky diodes, turning on during negative half-cycle of transformer secondary. Use Value: Body diode VSD = 0.8–1.2 V at 10 A and trr = 56–85 ns enable fast recovery with minimal reverse recovery loss, improving efficiency by 2.1% over 40 V Schottkys. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(on) = 0.0019 Ω @ 10 V; Qg = 42 nC; PQFN 5×6 package with single top-side drain pad | Higher RDS(on) increases conduction loss by ~19% at 100 A; lower Qg improves switching speed marginally | Prefer when board space is constrained and thermal budget allows +2.5 °C junction rise |
| NTMFS4C08NT1G | RDS(on) = 0.0014 Ω @ 10 V; Qg = 52 nC; SO-8FL package with exposed drain paddle | Lower RDS(on) improves conduction efficiency but higher Qg increases gate drive loss; no double-sided cooling | Choose when maximum efficiency at light-to-moderate loads is prioritized over peak current capability |
Compared with IRF6642TRPBF and NTMFS4C08NT1G, the SIE808DF-T1-GE3 uniquely combines 220-A silicon-limited current, 0.8 °C/W top-side thermal resistance, and halogen-free compliance-making it optimal for high-power-density, thermally constrained VRM and AI accelerator applications where both conduction and thermal performance are simultaneously critical.
Availability
SIE808DF-T1-GE3 is available at Aetrix Electronics and suitable for server VRM, AI accelerator POL, and telecom intermediate bus converters requiring stable component supply, long-term lifecycle support, and traceable halogen-free sourcing.
Supply support for SIE808DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIE808DF-T1-GE3 belongs to Vishay's PolarPAK® TrenchFET® Gen II family, engineered specifically for high-current, high-efficiency synchronous rectification and low-side switching in next-generation computing and AI infrastructure power systems.
FAQ
What is the maximum continuous drain current rating for SIE808DF-T1-GE3 under typical PCB conditions?
The SIE808DF-T1-GE3 has a silicon-limited continuous drain current of 220 A at TJ = 150 °C, but its package-limited rating is 60 A when mounted on a 1" × 1" FR4 board. For high-current applications, thermal design must leverage the top-exposed drain terminals (pins 1, 5, 6, 10) to achieve >100 W dissipation. The SIE808DF-T1-GE3 datasheet specifies this derating explicitly in Absolute Maximum Ratings Table.
Does SIE808DF-T1-GE3 support 4.5 V gate drive for logic-level operation?
Yes, the SIE808DF-T1-GE3 is fully characterized at VGS = 4.5 V, with RDS(on) = 0.0025 Ω (max) and Qg = 46 nC (typ). Its VGS(th) range of 1.5–3.0 V ensures robust turn-on with standard 3.3 V or 4.5 V PWM controllers. This makes the SIE808DF-T1-GE3 suitable for modern digital VRM controllers without level-shifting circuitry.
How does the PolarPAK® package of SIE808DF-T1-GE3 improve thermal performance compared to standard QFN?
The SIE808DF-T1-GE3 PolarPAK® package provides RthJC = 0.8 °C/W to the top-side drain, enabling direct heatsink attachment-unlike standard QFNs that rely solely on bottom-side conduction. This reduces total thermal resistance by up to 40% in high-power applications. The SIE808DF-T1-GE3 achieves this via four top-exposed drain terminals (pins 1, 5, 6, 10) and a leadframe-based encapsulation that eliminates die exposure while maximizing thermal path efficiency.
Is SIE808DF-T1-GE3 qualified for automotive applications?
No, the SIE808DF-T1-GE3 is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications only. Its datasheet specifies operating junction temperature from –55 °C to +150 °C, but Vishay does not list automotive-grade screening, PPAP documentation, or failure-in-time (FIT) data for this part. For automotive use, engineers should select Vishay's AEC-Q101-qualified PolarPAK® variants such as the SiR872DP.
What is the body diode reverse recovery performance of SIE808DF-T1-GE3?
The SIE808DF-T1-GE3 body diode exhibits trr = 56–85 ns and Qrr = 60–90 nC at IF = 10 A, dI/dt = 100 A/µs, and TJ = 25 °C. These values are measured and guaranteed per the datasheet's "Drain-Source Body Diode Characteristics" table. The fast recovery supports high-frequency synchronous rectification without significant tail current losses, making the SIE808DF-T1-GE3 well-suited for 500 kHz–1 MHz VRM designs.
SIE808DF-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 10-PolarPAK® (L)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 155 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8800 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-PolarPAK® (L)
SIE808DF-T1-GE3 FAQ
1.How can I place an order for SIE808DF-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIE808DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIE808DF-T1-GE3 reliable?
The price and inventory of SIE808DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE808DF-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIE808DF-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE808DF-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIE808DF-T1-GE3?
SIE808DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIE808DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIE808DF-T1-GE3?
For technical support, including SIE808DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE808DF-T1-GE3 requirements.
6.How does Aetrix verify that SIE808DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIE808DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE808DF-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIE808DF-T1-GE3?
All SIE808DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE808DF-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIE808DF-T1-GE3 part is unused and in its original packaging.
Return procedure for SIE808DF-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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