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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE810DF-T1-GE3

Name: SIE810DF-T1-GE3
Brand: Vishay Siliconix
SKU: SIE810DF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE810DF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (L)

Datasheet:: SIE810DF-T1-GE3.pdf

Description:: MOSFET N-CH 20V 60A 10POLARPAK

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Product details

Overview

SIE810DF-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Gen II Power MOSFET in PolarPAK® package, delivering R_DS(on) = 1.4 mΩ at V_GS = 10 V, 236-A silicon-limited continuous drain current, and ultra-low thermal resistance for double-sided cooling in high-efficiency DC/DC low-side switching and synchronous rectification.

For engineers reviewing the SIE810DF-T1-GE3 datasheet, SIE810DF-T1-GE3 pinout, SIE810DF-T1-GE3 application, or SIE810DF-T1-GE3 equivalent, this page provides verified device identity, validated PolarPAK® pin mapping, confirmed thermal performance (R_thJC(Drain) = 0.8 °C/W), gate charge profile (Q_g = 90 nC @ 4.5 V), and real-world application constraints including package-limited 60-A continuous rating.

Technical Context

This MOSFET uses trench-based silicon architecture optimized for low Q_gd/Q_gs ratio to suppress shoot-through in high-frequency synchronous buck converters. Its top-exposed PolarPAK® package enables direct thermal interface to heatsinks on both PCB sides while maintaining die isolation and consistent layout across die sizes.

It operates with gate threshold voltage V_GS(th) = 0.8–2.0 V, supports 4.5-V logic-level drive, and features 100% R_g and UIS tested reliability. The body diode exhibits t_rr = 60–90 ns and Q_rr = 65–100 nC under 10-A/100-A/µs conditions, critical for ZVS/ZCS design in VRM and point-of-load systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12-V input bus and 5-V output VRM stages
R_DS(on)	1.4 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-current CPU/GPU power delivery
I_D (Silicon Limit)	236 A @ T_J = 150 °C - Defines absolute safe operating area ceiling before thermal runaway
I_D (Package Limit)	60 A @ T_C = 25 °C - Real-world continuous current constrained by PolarPAK® thermal interface and PCB copper area
Q_g	90 nC @ V_GS = 4.5 V - Determines gate driver power requirement and switching loss in 300–1000 kHz DC/DC converters
R_thJC(Drain)	0.8 °C/W (typ.) - Enables >100 W dissipation with <80 °C junction rise above case, supporting double-sided heatsinking
t_rr	60–90 ns - Limits reverse recovery energy loss during hard-switched synchronous rectification

Pinout & Package

PolarPAK® Option L package: 10-terminal leadless surface-mount with top-side drain terminals (pins 1, 5, 6, 10) and bottom-side source/ground plane; dimensions 6.15 mm × 5.16 mm × 0.80 mm (D × E × A); RoHS- and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (D)	Top-exposed copper pads for direct thermal path to heatsink; electrically tied to internal die drain
2, 3, 7, 8, 9	Source (S)	Bottom-side copper plane providing low-inductance return path and primary thermal interface to PCB
4	Gate (G)	Single dedicated gate terminal; requires controlled 4.5-V or 10-V drive to achieve rated R_DS(on)

Key Features

Feature	Design Value
Ultra-low R_thJC(Drain)	0.8 °C/W typical enables >100 W power handling with minimal case-to-heatsink delta-T
Low Q_gd/Q_gs ratio	Reduces Miller-induced turn-on risk during high-dV/dt commutation in synchronous rectifiers
100% R_g tested	Ensures gate resistance consistency (0.9–1.35 Ω), critical for predictable switching timing
TrenchFET® Gen II silicon	Delivers 1.4 mΩ R_DS(on) at 10 V while maintaining robust UIS ruggedness (E_AS = 36 mJ)
Halogen-free construction	Complies with IEC 61249-2-21 for environmentally regulated industrial and telecom applications

Applications

VRM for CPU/GPU	High-Density DC/DC Converter
Use Scenario: Voltage regulator module supplying dynamic load currents up to 200 A to modern processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with fast turn-off to minimize body diode conduction loss. Use Value: 1.4-mΩ R_DS(on) reduces conduction loss below 0.6 W at 20 A, while 60-ns body diode t_rr limits reverse recovery loss during dead-time transitions.	Use Scenario: 12-V input to 1.2-V output point-of-load converter in server motherboard or AI accelerator card. IC Role / Device Role / Timing Role: Primary low-side FET in synchronous buck topology, driven by integrated controller with 4.5-V gate output. Use Value: 90-nC Q_g at 4.5 V allows efficient drive with standard gate drivers; PolarPAK® top-drain enables dual-side thermal management in space-constrained layouts.
Synchronous Rectification	Industrial Motor Drive Inverter
Use Scenario: Secondary-side rectification in isolated 48-V to 12-V DC/DC converters for telecom power systems. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency at high current. Use Value: 0.9–1.2 V V_SD body diode forward voltage and 65-nC Q_rr enable >2 % efficiency gain over 40-V Schottky alternatives at 10–30 A loads.	Use Scenario: Half-bridge leg in 24-V BLDC motor control for factory automation equipment. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter, requiring robust avalanche capability and fast switching. Use Value: 27-A I_AS and 36-mJ E_AS ratings support reliable operation during inductive load switching transients without external snubbers.

VRM for CPU/GPU

High-Density DC/DC Converter

Use Scenario: Voltage regulator module supplying dynamic load currents up to 200 A to modern processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with fast turn-off to minimize body diode conduction loss.

Use Value: 1.4-mΩ R_DS(on) reduces conduction loss below 0.6 W at 20 A, while 60-ns body diode t_rr limits reverse recovery loss during dead-time transitions.

Use Scenario: 12-V input to 1.2-V output point-of-load converter in server motherboard or AI accelerator card.

IC Role / Device Role / Timing Role: Primary low-side FET in synchronous buck topology, driven by integrated controller with 4.5-V gate output.

Use Value: 90-nC Q_g at 4.5 V allows efficient drive with standard gate drivers; PolarPAK® top-drain enables dual-side thermal management in space-constrained layouts.

Synchronous Rectification

Industrial Motor Drive Inverter

Use Scenario: Secondary-side rectification in isolated 48-V to 12-V DC/DC converters for telecom power systems.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency at high current.

Use Value: 0.9–1.2 V V_SD body diode forward voltage and 65-nC Q_rr enable >2 % efficiency gain over 40-V Schottky alternatives at 10–30 A loads.

Use Scenario: Half-bridge leg in 24-V BLDC motor control for factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter, requiring robust avalanche capability and fast switching.

Use Value: 27-A I_AS and 36-mJ E_AS ratings support reliable operation during inductive load switching transients without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SIE804DF-T1-GE3	R_DS(on) = 2.0 mΩ @ 4.5 V; lower Q_g (70 nC); same PolarPAK® package	Better suited for higher-frequency (>1 MHz) designs where gate drive loss dominates	Select when prioritizing switching loss reduction over conduction loss at moderate current (<15 A)
SiR872DP-T1-GE3	25-V rating; R_DS(on) = 1.2 mΩ @ 10 V; PowerPAK® 1212-8 package; higher thermal resistance (R_thJA = 28 °C/W)	Offers margin for transient overvoltage but lacks double-sided cooling capability	Choose only if board layout cannot accommodate PolarPAK® top-thermal interface or requires 25-V headroom

Compared with SIE810DF-T1-GE3, SIE804DF-T1-GE3 trades conduction loss for reduced gate drive demand, while SiR872DP-T1-GE3 sacrifices thermal performance for higher voltage margin-neither is pin-compatible, and both require PCB layout revision due to differing thermal interface requirements.

Availability

SIE810DF-T1-GE3 is available at Aetrix Electronics and suitable for VRM, high-density DC/DC conversion, and synchronous rectification applications requiring stable component supply, halogen-free compliance, and double-sided thermal management.

Supply support for SIE810DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The PolarPAK® product line delivers ultra-low thermal resistance power MOSFETs engineered for high-current, high-efficiency DC/DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SIE810DF-T1-GE3 under standard PCB mounting conditions?

The SIE810DF-T1-GE3 has a package-limited continuous drain current of 60 A when mounted on a 1" × 1" FR4 board at T_C = 25 °C. While its silicon limit reaches 236 A, thermal constraints of the PolarPAK® package and PCB copper area restrict practical continuous operation to 60 A. Derating applies above 25 °C case temperature per the published current derating curve.

Does SIE810DF-T1-GE3 support logic-level gate drive, and what R_DS(on) can be expected at 4.5 V?

Yes, SIE810DF-T1-GE3 supports logic-level gate drive with guaranteed R_DS(on) ≤ 1.6 mΩ at V_GS = 4.5 V and I_D = 25 A. This enables direct interfacing with standard 4.5-V PWM controllers without level-shifting, making it suitable for high-efficiency synchronous buck converters where gate drive voltage is constrained.

How does the PolarPAK® package of SIE810DF-T1-GE3 improve thermal performance compared to standard SO-8 or PowerPAK® packages?

The PolarPAK® package of SIE810DF-T1-GE3 achieves R_thJC(Drain) = 0.8 °C/W (typ.), significantly lower than typical SO-8 (≈3–4 °C/W) or PowerPAK® 1212-8 (≈1.5–2.0 °C/W). Its top-exposed drain terminals allow direct heatsink attachment on both PCB sides, enabling double-sided cooling that doubles effective thermal interface area and reduces junction-to-ambient resistance in compact layouts.

What is the body diode reverse recovery performance of SIE810DF-T1-GE3, and why does it matter in synchronous rectification?

The SIE810DF-T1-GE3 body diode exhibits t_rr = 60–90 ns and Q_rr = 65–100 nC at I_F = 10 A and dI/dt = 100 A/µs. In synchronous rectification, low t_rr and Q_rr minimize reverse recovery current spikes and associated switching losses during dead-time transitions, directly improving efficiency and reducing EMI in high-frequency DC/DC converters.

Is SIE810DF-T1-GE3 suitable for avalanche-rated applications, and what are its rated avalanche parameters?

Yes, SIE810DF-T1-GE3 is 100% UIS tested with rated single-pulse avalanche current I_AS = 27 A and avalanche energy E_AS = 36 mJ. These parameters validate its ability to withstand inductive switching transients without failure, making it appropriate for motor drive half-bridges and other circuits where unclamped inductive energy must be absorbed by the MOSFET itself.

SIE810DF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (L)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (L)

SIE810DF-T1-GE3 FAQ

1.How can I place an order for SIE810DF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE810DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE810DF-T1-GE3 reliable?

The price and inventory of SIE810DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE810DF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIE810DF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE810DF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE810DF-T1-GE3?

SIE810DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE810DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE810DF-T1-GE3?

For technical support, including SIE810DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE810DF-T1-GE3 requirements.

6.How does Aetrix verify that SIE810DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIE810DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE810DF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIE810DF-T1-GE3?

All SIE810DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE810DF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE810DF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIE810DF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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