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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE812DF-T1-E3

Name: SIE812DF-T1-E3
Brand: Vishay Siliconix
SKU: SIE812DF-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE812DF-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (L)

Datasheet:: SIE812DF-T1-E3.pdf

Description:: MOSFET N-CH 40V 60A 10POLARPAK

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Product details

Overview

SIE812DF-T1-E3 from Vishay Siliconix is an N-channel 40-V (D-S) TrenchFET® Gen II Power MOSFET in a PolarPAK® package, delivering R_DS(on) = 0.0026 Ω at V_GS = 10 V, 163-A silicon-limited continuous drain current (T_J = 150 °C), and 52-nC total gate charge at V_GS = 4.5 V. It serves as a low-side switch in high-efficiency DC/DC converters and synchronous rectifiers for VRM applications.

For engineers reviewing the SIE812DF-T1-E3 datasheet, SIE812DF-T1-E3 pinout, SIE812DF-T1-E3 application, or SIE812DF-T1-E3 equivalent, key selection criteria include its ultra-low thermal resistance (R_thJC = 0.8 °C/W to drain top), double-sided cooling capability, and low Q_gd/Q_gs ratio optimized to prevent shoot-through in high-frequency switching circuits.

Technical Context

This MOSFET employs trench-based silicon architecture with a leadframe-based PolarPAK® package where the top surface connects directly to pins 1, 5, 6, and 10 (drain terminals), enabling efficient double-sided thermal management. Its gate threshold voltage (V_GS(th)) ranges from 1.5 V to 3.0 V, and it features 100% R_g and UIS testing per production lot.

The device supports fast switching with t_d(on) = 20–30 ns and t_f = 10–15 ns under 10-V gate drive, while its body diode exhibits V_SD = 0.8–1.2 V at I_S = 10 A and t_rr = 50–75 ns, making it suitable for synchronous rectification where reverse recovery performance impacts efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for low-voltage power stages
R_DS(on)	0.0026 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 25 A, critical for high-current VRM output stages
I_D (Silicon Limit)	163 A @ T_J = 150 °C - Defines maximum safe current handling before thermal runaway
Q_g	52 nC @ V_GS = 4.5 V - Determines gate driver power requirement and switching speed in 5-V control systems
R_thJC (Drain)	0.8 °C/W (typ.) - Allows direct heatsinking to PCB copper or external cooler via top-side drain connection
V_GS(th)	1.5–3.0 V - Ensures reliable turn-on with standard logic-level gate drivers
C_iss	8300 pF @ V_DS = 20 V - Impacts gate drive energy and EMI behavior in hard-switched topologies

Pinout & Package

PolarPAK® Option L package: 10-terminal leadless surface-mount device with top-side drain terminals (pins 1, 5, 6, 10) and bottom-side source/gate connections. Dimensions: 6.15 mm × 5.16 mm × 0.80 mm (L × W × H). Thermal path optimized for double-sided cooling.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (D)	Top-surface exposed copper pads - primary thermal and current path to heatsink or PCB copper pour
2, 3, 7, 8, 9	Source (S)	Bottom-side terminals - connect to ground plane for low-inductance return path and thermal dissipation
4	Gate (G)	Single bottom-side gate input - requires controlled impedance routing to minimize ringing and EMI

Key Features

Feature	Design Value
Ultra-low R_thJC (Drain)	0.8 °C/W enables >100 W power dissipation with minimal temperature rise when top-cooled
Low Q_gd/Q_gs ratio	Reduces Miller-induced shoot-through risk during hard commutation in synchronous buck converters
100% R_g and UIS tested	Ensures consistent gate resistance and ruggedness against unclamped inductive switching stress
TrenchFET® Gen II silicon	Delivers superior R_DS(on) × Q_g figure-of-merit for high-frequency, high-efficiency operation
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and EU Directive 2002/95/EC for environmentally regulated end equipment

Applications

VRM Output Stage	DC/DC Low-Side Switch
Use Scenario: High-current CPU/GPU voltage regulation module delivering up to 200 A at ≤1.2 V. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–1000 kHz with precise dead-time control. Use Value: 0.0026 Ω R_DS(on) minimizes conduction loss, while 52-nC Q_g enables efficient 5-V gate driving without excessive driver losses.	Use Scenario: 12 V-to-1.2 V point-of-load converter in telecom base station power supplies. IC Role / Device Role / Timing Role: Primary low-side switch in a synchronous buck topology with forced continuous conduction mode. Use Value: Double-sided cooling via PolarPAK® top/bottom terminals maintains T_J < 125 °C under full load, improving system reliability.
Synchronous Rectification	High-Current Motor Drive Half-Bridge
Use Scenario: Secondary-side rectification in isolated 48 V-to-12 V DC/DC converters for data center servers. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency. Use Value: Body diode t_rr = 50–75 ns and Q_rr = 65–100 nC enable clean commutation with minimal voltage overshoot during synchronous gate timing.	Use Scenario: Low-side switch in a 40 V, 100 A industrial BLDC motor inverter half-bridge stage. IC Role / Device Role / Timing Role: High-current switching element subjected to repetitive UIS events during motor phase commutation. Use Value: 100% UIS-tested robustness ensures survival under inductive load switching transients up to 50 A avalanche current.

VRM Output Stage

DC/DC Low-Side Switch

Use Scenario: High-current CPU/GPU voltage regulation module delivering up to 200 A at ≤1.2 V.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–1000 kHz with precise dead-time control.

Use Value: 0.0026 Ω R_DS(on) minimizes conduction loss, while 52-nC Q_g enables efficient 5-V gate driving without excessive driver losses.

Use Scenario: 12 V-to-1.2 V point-of-load converter in telecom base station power supplies.

IC Role / Device Role / Timing Role: Primary low-side switch in a synchronous buck topology with forced continuous conduction mode.

Use Value: Double-sided cooling via PolarPAK® top/bottom terminals maintains T_J < 125 °C under full load, improving system reliability.

Synchronous Rectification

High-Current Motor Drive Half-Bridge

Use Scenario: Secondary-side rectification in isolated 48 V-to-12 V DC/DC converters for data center servers.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency.

Use Value: Body diode t_rr = 50–75 ns and Q_rr = 65–100 nC enable clean commutation with minimal voltage overshoot during synchronous gate timing.

Use Scenario: Low-side switch in a 40 V, 100 A industrial BLDC motor inverter half-bridge stage.

IC Role / Device Role / Timing Role: High-current switching element subjected to repetitive UIS events during motor phase commutation.

Use Value: 100% UIS-tested robustness ensures survival under inductive load switching transients up to 50 A avalanche current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7853TRPBF	R_DS(on) = 0.0028 Ω @ 10 V; Q_g = 62 nC; SO-8 package with single-sided cooling	Limited to ~60 A continuous due to higher R_thJA (40 °C/W); unsuitable for double-sided thermal management	Select when board space constraints favor SO-8 and thermal budget allows higher junction temperature rise
NTMFS4C09NT1G	R_DS(on) = 0.0025 Ω @ 10 V; Q_g = 49 nC; PowerSO-8 package with top-side drain but no dedicated thermal pad	Lower gate charge improves switching efficiency but lacks PolarPAK®'s dual thermal interface for high-power density designs	Prefer for 48 V input systems requiring tighter gate charge control, but verify thermal margin without top-side heatsinking

Compared with IRF7853TRPBF and NTMFS4C09NT1G, the SIE812DF-T1-E3 provides superior thermal performance via its top-exposed drain and lower R_thJC, enabling higher sustained current in compact VRM and server power modules where double-sided cooling is implemented.

Availability

SIE812DF-T1-E3 is available at Aetrix Electronics and suitable for VRM output stages, DC/DC low-side switching, and synchronous rectification applications requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for SIE812DF-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The PolarPAK® product line was engineered specifically for high-current, high-efficiency power conversion systems demanding ultra-low thermal resistance and double-sided thermal management - exemplified by the SIE812DF-T1-E3's top-exposed drain architecture.

FAQ

What is the maximum continuous drain current rating for SIE812DF-T1-E3 at T_C = 25 °C?

The SIE812DF-T1-E3 has a silicon-limited continuous drain current of 163 A at T_J = 150 °C and T_C = 25 °C. However, the package-limited rating is 60 A under the same conditions, meaning thermal design must ensure case temperature remains low enough to avoid exceeding this limit. The SIE812DF-T1-E3 datasheet specifies both values to guide layout and heatsinking decisions.

Does SIE812DF-T1-E3 support logic-level gate drive?

Yes, the SIE812DF-T1-E3 has a gate threshold voltage (V_GS(th)) ranging from 1.5 V to 3.0 V, allowing full enhancement with standard 3.3 V or 5 V logic-level gate drivers. Its R_DS(on) = 0.0034 Ω at V_GS = 4.5 V confirms strong conduction under logic-level drive, making the SIE812DF-T1-E3 well-suited for modern controller ICs without dedicated high-side gate drivers.

How is thermal management implemented in the SIE812DF-T1-E3 PolarPAK® package?

The SIE812DF-T1-E3 uses a PolarPAK® Option L package where pins 1, 5, 6, and 10 are top-surface drain terminals - directly solderable to a heatsink or thermal pad on the PCB top layer. Simultaneously, source terminals (pins 2, 3, 7, 8, 9) on the bottom provide a second thermal path to internal copper planes. This dual-path design achieves R_thJC = 0.8 °C/W (drain) and enables double-sided cooling in the SIE812DF-T1-E3.

Is SIE812DF-T1-E3 halogen-free and RoHS-compliant?

Yes, the SIE812DF-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with the EU RoHS Directive 2002/95/EC. The "-E3" suffix explicitly denotes lead-free and halogen-free construction. This compliance is verified per production lot and documented in Vishay's official specification sheet for the SIE812DF-T1-E3.

What is the body diode reverse recovery performance of SIE812DF-T1-E3?

The SIE812DF-T1-E3 body diode exhibits t_rr = 50–75 ns and Q_rr = 65–100 nC at I_F = 10 A, dI/dt = 100 A/µs, and T_J = 25 °C. These parameters are measured and guaranteed, supporting clean commutation in synchronous rectification. The SIE812DF-T1-E3's low Q_rr reduces switching loss and voltage spikes compared to standard MOSFETs in high-frequency DC/DC applications.

SIE812DF-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (L)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8300 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (L)

SIE812DF-T1-E3 FAQ

1.How can I place an order for SIE812DF-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE812DF-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE812DF-T1-E3 reliable?

The price and inventory of SIE812DF-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE812DF-T1-E3 is usually 5 days.

3.What payment methods are accepted for SIE812DF-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE812DF-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE812DF-T1-E3?

SIE812DF-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE812DF-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE812DF-T1-E3?

For technical support, including SIE812DF-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE812DF-T1-E3 requirements.

6.How does Aetrix verify that SIE812DF-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SIE812DF-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE812DF-T1-E3 meets industry standards.

7.What is the process for return or replacement of SIE812DF-T1-E3?

All SIE812DF-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE812DF-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE812DF-T1-E3 part is unused and in its original packaging.

Return procedure for SIE812DF-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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