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Vishay Siliconix SIE812DF-T1-GE3
- Part No.:
- SIE812DF-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 10-PolarPAK® (L)
- Datasheet:
-
SIE812DF-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A 10POLARPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,744
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Product details
Overview
SIE812DF-T1-GE3 from Vishay Siliconix is an N-channel 40-V (D-S) TrenchFET® Gen II Power MOSFET in PolarPAK® package, delivering RDS(on) = 0.0026 Ω at VGS = 10 V, 163-A silicon-limited continuous drain current, and 52-nC total gate charge. It serves as a high-current low-side switch in VRM and synchronous rectification circuits requiring double-sided cooling.
For engineers reviewing the SIE812DF-T1-GE3 datasheet, SIE812DF-T1-GE3 pinout, SIE812DF-T1-GE3 application, or SIE812DF-T1-GE3 equivalent, this page provides verified thermal resistance values (RthJC(Drain) = 0.8 °C/W), body diode recovery metrics (trr = 50–75 ns), gate charge partitioning (Qgd/Qgs = 15/25 nC), absolute maximum ratings (VGS = ±20 V, TJ = –55 to 150 °C), and PolarPAK® top-exposed thermal path configuration.
Technical Context
This MOSFET uses trench-based silicon architecture with optimized gate oxide and channel geometry to achieve ultra-low on-resistance and controlled Qgd/Qgs ratio (≈0.6), reducing shoot-through risk in high-frequency synchronous buck stages. Its PolarPAK® Option L package integrates a top-exposed drain paddle for direct thermal interface to heatsinks or PCB copper, while maintaining full encapsulation of die and wirebonds.
The device is characterized for DC/DC converter operation under steady-state junction temperatures up to 150 °C, with validated UIS (unclamped inductive switching) and avalanche energy rating (EAS = 125 mJ). Gate drive compatibility is confirmed for 4.5 V and 10 V logic-level signals, with VGS(th) tightly distributed between 1.5 V and 3.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V and 24 V input bus systems in point-of-load converters. |
| RDS(on) | 0.0026 Ω @ VGS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-efficiency VRM designs. |
| ID (Silicon Limit) | 163 A - Supports peak transient currents in server CPU power delivery without silicon saturation. |
| Qg | 52 nC @ VGS = 4.5 V - Determines gate driver power requirement and switching loss in 300–1000 kHz applications. |
| RthJC (Drain) | 0.8 °C/W - Enables >100 W power dissipation with minimal ΔT between junction and heatsink interface. |
| trr | 50–75 ns - Limits reverse recovery losses during hard commutation in synchronous rectifier mode. |
| VGS(th) | 1.5–3.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers without overdrive. |
Pinout & Package
PolarPAK® Option L is a leadless, top-exposed thermal package (6.15 mm × 5.16 mm × 0.80 mm) with drain-connected top surface and solderable bottom terminals. Thermal path is optimized via exposed drain paddle on top; source and gate connections are accessible only from bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 6, 10 | Drain (Top Surface & Bottom Pads) | Electrically and thermally tied to top-exposed metal paddle - primary heat extraction path and high-current return node. |
| 2, 3, 7, 8, 9 | Source | Five dedicated source terminals provide low-inductance return path and reduce source inductance-induced ringing. |
| 4 | Gate | Single gate terminal with Rg = 1.15–1.7 Ω - supports controlled turn-on/turn-off with minimal external gate resistor. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RthJC(Drain) | 0.8 °C/W enables direct top-side heatsinking - eliminates need for thermal vias or thick copper layers. |
| Low Qgd/Qgs ratio | 0.6 (15/25 nC) suppresses Miller-induced false turn-on during high dV/dt switching transitions. |
| 100 % UIS tested | Validated unclamped inductive switching robustness up to IAS = 50 A - ensures reliability in hard-switched topologies. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - suitable for environmentally regulated industrial and telecom equipment. |
| Double-sided cooling support | Top-exposed drain + bottom-source/gate terminals allow simultaneous thermal management from both PCB sides. |
Applications
| Server VRM Power Stage | Industrial DC/DC Converter |
|---|---|
Use Scenario: High-current, high-frequency (500–1000 kHz) buck converter supplying 1–3 V to multi-core CPUs in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating in continuous conduction mode with fast body diode commutation. Use Value: 0.0026 Ω RDS(on) reduces conduction loss by >30 % vs. comparable 3.5 mΩ MOSFETs, directly improving system efficiency at 100+ A loads. |
Use Scenario: 24 V-to-12 V isolated or non-isolated step-down converter in programmable logic controllers and motor drives. IC Role / Device Role / Timing Role: Primary low-side switch in synchronous rectification stage, handling repetitive 10–50 A load transients. Use Value: 52 nC Qg at 4.5 V allows use of low-power gate drivers (e.g., UCC27531), reducing driver BOM cost and board space. |
| Telecom Base Station PSU | Automotive ADAS Power Module |
Use Scenario: 48 V intermediate bus converter powering RF amplifiers and FPGAs in 5G macro base stations. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge or LLC resonant topology. Use Value: 125 mJ EAS rating ensures survivability during output short-circuit events without derating or snubbers. |
Use Scenario: 12 V-to-5 V/3.3 V power supply for radar sensor ECUs and camera modules in autonomous driving systems. IC Role / Device Role / Timing Role: Low-side switch in compact, thermally constrained buck regulator with strict automotive temperature requirements. Use Value: –55 to 150 °C TJ range and 0.8 °C/W RthJC enable operation at 135 °C case temperature without thermal throttling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | Higher RDS(on) (3.1 mΩ @ 10 V), larger PQFN 5×6 mm package, no top-exposed drain. | Lacks double-sided cooling capability; requires PCB thermal vias and thicker copper for equivalent power handling. | Choose when legacy layout compatibility with IRF66xx footprint is required and top-side heatsinking is unavailable. |
| NTMFS4C09NT1G | Lower voltage rating (30 V), lower Qg (37 nC), same PolarPAK®-like SO-8FL package but no top-exposed thermal path. | Not suitable for 40 V bus systems; limited to ≤24 V inputs; thermal performance relies solely on bottom-side conduction. | Prefer for cost-sensitive 12 V/24 V applications where 40 V margin and top-side cooling are unnecessary. |
Compared with IRF6642TRPBF and NTMFS4C09NT1G, the SIE812DF-T1-GE3 uniquely combines 40 V rating, sub-3 mΩ on-resistance, and top-exposed PolarPAK® thermal architecture-enabling higher power density in space-constrained VRM and telecom power supplies without sacrificing thermal headroom.
Availability
SIE812DF-T1-GE3 is available at Aetrix Electronics and suitable for server VRM design, industrial DC/DC conversion, and telecom power supply applications requiring stable component supply, halogen-free compliance, and high-reliability double-sided thermal management.
Supply support for SIE812DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and thermal reliability.
The SIE812DF-T1-GE3 belongs to Vishay's TrenchFET® Gen II PolarPAK® family, engineered specifically for high-current, high-frequency DC/DC conversion where thermal resistance and switching loss must be minimized simultaneously.
FAQ
What is the maximum continuous drain current rating for SIE812DF-T1-GE3 at 70 °C case temperature?
The SIE812DF-T1-GE3 has a continuous drain current limit of 60 A at TC = 70 °C, defined by its package thermal constraint-not silicon capability. This value is specified in the Absolute Maximum Ratings table and reflects safe operation with adequate heatsinking to maintain case temperature at or below 70 °C. The silicon itself supports 163 A, but package construction limits sustained current at elevated temperatures.
Does SIE812DF-T1-GE3 support 4.5 V gate drive in practical applications?
Yes, the SIE812DF-T1-GE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 0.0034 Ω and Qg = 52 nC under those conditions. Its VGS(th) range (1.5–3.0 V) ensures robust turn-on with standard 3.3 V or 4.5 V logic outputs, making it suitable for controller ICs without dedicated high-side gate drivers.
How does the PolarPAK® package of SIE812DF-T1-GE3 improve thermal performance compared to standard PQFN?
The SIE812DF-T1-GE3 PolarPAK® Option L package features a top-exposed drain paddle that serves as a primary thermal interface-reducing RthJC(Drain) to 0.8 °C/W. Unlike standard PQFN packages relying solely on bottom-side conduction, this architecture enables direct attachment to heatsinks or cold plates, effectively doubling thermal extraction capacity without increasing PCB area or via count.
Is SIE812DF-T1-GE3 suitable for synchronous rectification in LLC resonant converters?
Yes, the SIE812DF-T1-GE3 is validated for synchronous rectification in LLC topologies due to its fast body diode recovery (trr = 50–75 ns), low Qrr (65–100 nC), and low Qgd/Qgs ratio. These parameters minimize reverse recovery losses and prevent shoot-through during zero-voltage switching transitions typical in LLC operation.
What is the avalanche energy rating (EAS) of SIE812DF-T1-GE3, and how is it tested?
The SIE812DF-T1-GE3 has a single-pulse avalanche energy rating of 125 mJ, measured per JEDEC standard JESD24-1 using inductive load testing with L = 0.1 mH. Each unit undergoes 100 % unclamped inductive switching (UIS) screening at IAS = 50 A, ensuring robustness against transient overvoltage events in hard-switched power stages.
SIE812DF-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 10-PolarPAK® (L)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 170 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8300 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-PolarPAK® (L)
SIE812DF-T1-GE3 FAQ
1.How can I place an order for SIE812DF-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIE812DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIE812DF-T1-GE3 reliable?
The price and inventory of SIE812DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE812DF-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIE812DF-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE812DF-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIE812DF-T1-GE3?
SIE812DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIE812DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIE812DF-T1-GE3?
For technical support, including SIE812DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE812DF-T1-GE3 requirements.
6.How does Aetrix verify that SIE812DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIE812DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE812DF-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIE812DF-T1-GE3?
All SIE812DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE812DF-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIE812DF-T1-GE3 part is unused and in its original packaging.
Return procedure for SIE812DF-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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