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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE818DF-T1-E3

Name: SIE818DF-T1-E3
Brand: Vishay Siliconix
SKU: SIE818DF-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE818DF-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (L)

Datasheet:: SIE818DF-T1-E3.pdf

Description:: MOSFET N-CH 75V 60A 10POLARPAK

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Product details

Overview

SIE818DF-T1-E3 from Vishay Siliconix is an N-channel 75 V (D-S) TrenchFET® power MOSFET in PolarPAK® package, rated for 60 A continuous drain current at TC = 25 °C and 0.0095 Ω R_DS(on) at V_GS = 10 V, designed for primary-side switching in high-efficiency DC-DC converters.

For engineers reviewing the SIE818DF-T1-E3 datasheet, SIE818DF-T1-E3 pinout, SIE818DF-T1-E3 application, or SIE818DF-T1-E3 equivalent, this page delivers verified thermal resistance (R_thJC = 0.8 °C/W max), gate charge (Q_g = 63 nC typ), avalanche energy rating (E_AS = 125 mJ), body diode recovery (t_rr = 100 ns typ), and double-sided cooling capability - all critical for half-bridge and synchronous rectification layout decisions.

Technical Context

This MOSFET uses a trench-based silicon structure optimized for low R_DS(on) and fast switching, with a low Q_gd/Q_gs ratio (≈1.55 at V_GS = 10 V) to suppress shoot-through in bridge configurations. Its top-exposed PolarPAK® package enables direct thermal interface to heatsinks on both sides.

The device features 100 % R_g and UIS testing, guaranteed avalanche capability (I_AS = 50 A, E_AS = 125 mJ), and a body diode with V_SD = 0.8 V typ at I_S = 10 A and t_rr = 100 ns typ - enabling robust operation in hard-switched and synchronous rectifier roles without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - maximum blocking voltage for primary-side switch in 48 V input DC-DC and offline SMPS designs
R_DS(on) max @ 10 V	0.0095 Ω - enables <1 W conduction loss at 10 A, supporting high-current, low-voltage output stages
Q_g typ	63 nC - determines gate drive power requirement and switching speed in 100–500 kHz applications
R_thJC (drain)	0.8 °C/W max - allows >100 W power dissipation with modest heatsinking on top surface
E_AS	125 mJ - supports reliable operation under inductive load switching and transient overcurrent events
t_rr (body diode)	100 ns typ - minimizes reverse recovery losses in synchronous rectification at ≤300 kHz
I_D (package limit)	60 A @ T_C = 25 °C - defines PCB copper area and thermal pad design for sustained current handling

Pinout & Package

PolarPAK® package: leadless, top-exposed copper drain paddle; 10-terminal configuration with dual-source/dual-drain symmetry for current sharing and thermal spreading. Dimensions: 6.15 mm × 5.16 mm × 0.80 mm (L×W×H), with exposed drain on top surface connected to pins 1, 5, 6, and 10.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (top-exposed)	Primary high-current path and main thermal interface; requires solder mask defined thermal pad on PCB top layer
2, 4, 7, 8, 9	Source	Low-side return path; pins 2/4/7/8/9 form parallel source connection to minimize loop inductance
3	Gate	Control input; isolated from drain/source by internal oxide; requires low-inductance gate trace and local 10 nF bypass

Key Features

Feature	Design Value
TrenchFET® silicon technology	Delivers 0.0095 Ω R_DS(on) at 10 V while maintaining rugged avalanche performance (125 mJ)
Top-exposed PolarPAK® package	Enables double-sided cooling: top-surface heatsink + bottom-side PCB copper, reducing R_thJA to 20 °C/W typ
Low Q_gd/Q_gs ratio	~1.55 - suppresses Miller-induced turn-on during high dV/dt commutation, improving half-bridge reliability
100 % R_g and UIS tested	Ensures gate resistance consistency (<1.5 Ω) and single-pulse avalanche robustness across production lots
Body diode with t_rr = 100 ns	Supports synchronous rectification without external diode in medium-frequency flyback and LLC resonant converters

Applications

Primary Side Switch	Half-Bridge Top Switch
Use Scenario: High-efficiency 48 V–75 V input DC-DC converter operating at 200–300 kHz in telecom and server power supplies. IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or phase-shifted full-bridge topology. Use Value: 0.0095 Ω R_DS(on) and 63 nC Q_g enable <1.2 W conduction + <0.8 W switching loss at 15 A, improving full-load efficiency by ≥0.5 % vs. comparable 80 V MOSFETs.	Use Scenario: 1 kW industrial motor drive inverter stage with 300–500 kHz PWM carrier frequency. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge leg, paired with complementary low-side device. Use Value: Low Q_gd/Q_gs ratio and 50 A I_AS rating prevent shoot-through and withstand bus transients during short-circuit events.
Synchronous Rectifier	High-Current Load Switch
Use Scenario: Secondary-side rectification in 12 V/60 A output LLC resonant converter for AI accelerator power delivery. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: Body diode t_rr = 100 ns and V_SD = 0.8 V reduce reverse recovery loss and forward drop, cutting secondary-side losses by ~30 % vs. 40 V Schottky.	Use Scenario: 48 V battery-powered industrial PLC module requiring hot-swap and inrush control. IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing and fault reporting. Use Value: 60 A package-limited current and 75 V V_DS support 2 kA surge tolerance when used with external current-limiting circuitry and gate slew control.

Primary Side Switch

Half-Bridge Top Switch

Use Scenario: High-efficiency 48 V–75 V input DC-DC converter operating at 200–300 kHz in telecom and server power supplies.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or phase-shifted full-bridge topology.

Use Value: 0.0095 Ω R_DS(on) and 63 nC Q_g enable <1.2 W conduction + <0.8 W switching loss at 15 A, improving full-load efficiency by ≥0.5 % vs. comparable 80 V MOSFETs.

Use Scenario: 1 kW industrial motor drive inverter stage with 300–500 kHz PWM carrier frequency.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge leg, paired with complementary low-side device.

Use Value: Low Q_gd/Q_gs ratio and 50 A I_AS rating prevent shoot-through and withstand bus transients during short-circuit events.

Synchronous Rectifier

High-Current Load Switch

Use Scenario: Secondary-side rectification in 12 V/60 A output LLC resonant converter for AI accelerator power delivery.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: Body diode t_rr = 100 ns and V_SD = 0.8 V reduce reverse recovery loss and forward drop, cutting secondary-side losses by ~30 % vs. 40 V Schottky.

Use Scenario: 48 V battery-powered industrial PLC module requiring hot-swap and inrush control.

IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing and fault reporting.

Use Value: 60 A package-limited current and 75 V V_DS support 2 kA surge tolerance when used with external current-limiting circuitry and gate slew control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	75 V, 0.0075 Ω R_DS(on), 80 A ID, PowerPAK® 8x8 package	Higher current rating but larger footprint (8 mm × 8 mm); no top-exposed drain	Preferred where higher current headroom is needed and board space allows larger package; not drop-in due to different pinout and thermal interface
IRFH8326TRPBF	75 V, 0.0085 Ω R_DS(on), 70 A ID, PQFN 5x6 package with bottom-exposed drain	Bottom-side cooling only; R_thJC = 1.2 °C/W (vs. 0.8 °C/W top-side for SIE818DF-T1-E3)	Selected when thermal path is constrained to PCB bottom layer; requires redesign of thermal pad and gate routing

Compared with SiR872DP-T1-GE3 and IRFH8326TRPBF, the SIE818DF-T1-E3 offers superior top-side thermal resistance (0.8 °C/W) and smaller footprint (6.15 mm × 5.16 mm), making it optimal for space-constrained, double-sided-cooled high-frequency power stages where gate drive simplicity and avalanche margin are prioritized over absolute peak current.

Availability

SIE818DF-T1-E3 is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, AI server VRMs, and battery-energy storage systems requiring stable component supply and long-term manufacturability.

Supply support for SIE818DF-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The PolarPAK® MOSFET product line targets high-efficiency, high-power-density power conversion - specifically engineered for double-sided thermal management and fast-switching topologies like LLC resonant and active-clamp forward converters.

FAQ

What is the maximum continuous drain current rating for SIE818DF-T1-E3 under typical PCB conditions?

The SIE818DF-T1-E3 has a package-limited continuous drain current of 60 A at case temperature T_C = 25 °C, measured on a 1" × 1" FR4 board. At T_C = 70 °C, the rating drops to 60 A (package limit remains dominant), while the silicon limit is 79 A. Derating curves confirm usable current up to 45 A at T_C = 100 °C - critical for thermal design validation of the SIE818DF-T1-E3 in real-world layouts.

Does SIE818DF-T1-E3 support synchronous rectification without an external diode?

Yes, the SIE818DF-T1-E3 integrates a robust body diode with t_rr = 100 ns typ and V_SD = 0.8 V typ at I_S = 10 A, enabling direct use as a synchronous rectifier in medium-frequency (≤300 kHz) flyback and LLC converters. Its low Q_gd/Q_gs ratio also prevents false turn-on during reverse recovery, making the SIE818DF-T1-E3 suitable for self-driven or transformer-coupled gate schemes without added complexity.

What is the thermal resistance from junction to case (R_thJC) for SIE818DF-T1-E3, and which surface does it reference?

The SIE818DF-T1-E3 specifies R_thJC (drain) = 0.8 °C/W maximum, referenced to the top-exposed drain paddle - not the PCB-mounted side. This value enables accurate thermal modeling when using a heatsink on the top surface. The R_thJC (source) is 2.2 °C/W, confirming that the primary thermal path for the SIE818DF-T1-E3 is through the top-side drain, not the bottom-side PCB interface.

Is SIE818DF-T1-E3 qualified for avalanche energy handling, and what is its rated E_AS?

Yes, the SIE818DF-T1-E3 is 100 % UIS (unclamped inductive switching) tested and rated for E_AS = 125 mJ at T_J = 25 °C, with I_AS = 50 A. This specification ensures reliable operation during inductive turn-off transients in hard-switched topologies - a key differentiator for the SIE818DF-T1-E3 in primary-side switch applications where snubberless design is required.

What is the gate threshold voltage range for SIE818DF-T1-E3, and how does it affect 4.5 V logic-level drive?

The SIE818DF-T1-E3 has a gate threshold voltage V_GS(th) of 1.5 V to 3.0 V (min/typ/max), ensuring turn-on compatibility with 4.5 V gate drivers. At V_GS = 4.5 V, R_DS(on) is guaranteed ≤0.0125 Ω - sufficient for high-efficiency operation in 3.3 V or 5 V logic-driven circuits. This V_GS(th) range makes the SIE818DF-T1-E3 robust against noise-induced turn-on while remaining fully enhanced under standard logic-level drive conditions.

SIE818DF-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (L)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3200 pF @ 38 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (L)

SIE818DF-T1-E3 FAQ

1.How can I place an order for SIE818DF-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE818DF-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE818DF-T1-E3 reliable?

The price and inventory of SIE818DF-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE818DF-T1-E3 is usually 5 days.

3.What payment methods are accepted for SIE818DF-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE818DF-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE818DF-T1-E3?

SIE818DF-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE818DF-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE818DF-T1-E3?

For technical support, including SIE818DF-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE818DF-T1-E3 requirements.

6.How does Aetrix verify that SIE818DF-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SIE818DF-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE818DF-T1-E3 meets industry standards.

7.What is the process for return or replacement of SIE818DF-T1-E3?

All SIE818DF-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE818DF-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE818DF-T1-E3 part is unused and in its original packaging.

Return procedure for SIE818DF-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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