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Vishay Siliconix SIE822DF-T1-GE3
- Part No.:
- SIE822DF-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 10-PolarPAK® (S)
- Datasheet:
-
SIE822DF-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 50A 10POLARPAK
- Quantity:
- Payment:
- Shipping:
Inventory:242
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Product details
Overview
SIE822DF-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® power MOSFET in a leadframe-based PolarPAK® package, featuring RDS(on) = 0.0034 Ω at VGS = 10 V, Qg = 24 nC (typ.), and 50 A package-limited continuous drain current. It serves as a high-efficiency synchronous rectifier or primary-side switch in compact DC/DC converters for server VRM and point-of-load applications.
For engineers reviewing the SIE822DF-T1-GE3 datasheet, SIE822DF-T1-GE3 pinout, SIE822DF-T1-GE3 application, or SIE822DF-T1-GE3 equivalent, this page delivers verified thermal resistance (RthJC = 1.2 °C/W max to drain top), low Qgd/Qgs ratio for shoot-through prevention, 100% Rg and UIS tested qualification, and PolarPAK® double-sided cooling capability - all critical for high-density power stage design.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in 20 V systems. Its gate charge profile (Qg = 24 nC typ. at VGS = 4.5 V) and low Ciss = 4200 pF support efficient operation with standard gate drivers in high-frequency synchronous buck stages.
The PolarPAK® package integrates top-exposed drain terminals (pins 1, 5, 6, 10) for direct thermal coupling to heatsinks or PCB copper, while maintaining a sealed die cavity and consistent layout across die sizes. Thermal resistance from junction to case (drain top) is rated at 1.2 °C/W maximum, enabling high-power density without external thermal vias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage compatible with 12 V input bus and 5/3.3 V output rails in VRM and POL converters. |
| RDS(on) max @ VGS = 10 V | 0.0034 Ω - Enables <17 mW conduction loss at 18.3 A, critical for >95% efficiency in high-current synchronous rectification. |
| RDS(on) max @ VGS = 4.5 V | 0.0055 Ω - Ensures robust on-state performance with 5 V gate drive, supporting logic-level control in compact DC/DC controllers. |
| Qg typ. | 24 nC - Low total gate charge reduces driver power demand and enables faster turn-on/turn-off transitions at ≥1 MHz switching frequencies. |
| Continuous ID (package limit) | 50 A - Validated under JEDEC-standard 1" × 1" FR4 board conditions, defining safe steady-state current for PCB-mounted designs. |
| RthJC (drain top) max | 1.2 °C/W - Confirmed thermal path from junction to exposed drain top surface, enabling direct thermal interface to heatsink or copper plane. |
| Body diode VSD | 0.8–1.2 V @ IS = 10 A - Low forward voltage minimizes reverse-recovery losses during dead-time conduction in synchronous rectifiers. |
Pinout & Package
PolarPAK® is a 10-pin, leadless, top-cooled surface-mount package with exposed drain terminals on the top surface (pins 1, 5, 6, 10) and source/gate connections on the bottom. The package measures 6.15 mm × 5.16 mm × 0.80 mm (L × W × H) and uses copper leadframe encapsulation with no exposed die.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 6, 10 (Top) | Drain (D) | Exposed copper drain terminals for double-sided thermal management; electrically tied together and thermally coupled to heatsink or PCB copper. |
| 2, 9 (Bottom) | Gate (G) | Control input with Rg = 1.5 Ω max; low Qgd/Qgs ratio mitigates Miller-induced shoot-through in half-bridge configurations. |
| 3, 4, 7, 8 (Bottom) | Source (S) | Power return path with RthJC(source) = 3.4 °C/W max; provides low-inductance connection for gate driver return and current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 0.0034 Ω RDS(on) at 10 V drive while maintaining rugged UIS rating (EAS = 45 mJ) for transient overload resilience. |
| Top-exposed PolarPAK® drain | Enables direct thermal interface to heatsink or copper pour, achieving 1.2 °C/W junction-to-case (drain top) resistance for high-power density layouts. |
| Low Qgd/Qgs ratio | Reduces risk of unintended turn-on during high dv/dt commutation, improving reliability in hard-switched synchronous buck converters. |
| 100% Rg and UIS tested | Ensures gate resistance consistency (1–1.5 Ω) and avalanche energy capability (30 A IAS, 45 mJ EAS) across production lots. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's "Green" material categorization (doc. 99912), suitable for environmentally regulated industrial and computing systems. |
Applications
| Server VRM Power Stage | High-Density POL Converter |
|---|---|
Use Scenario: Primary-side high-side switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.8 V) at up to 200 A per rail. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier with ultra-low RDS(on) and fast switching to minimize conduction and switching losses. Use Value: Enables >95% efficiency at 1 MHz switching with minimal thermal derating due to 1.2 °C/W RthJC(drain). |
Use Scenario: Secondary-side synchronous rectifier in isolated DC/DC modules for FPGA, ASIC, or memory power domains. IC Role / Device Role / Timing Role: Low-voltage, high-current switch replacing Schottky diodes to reduce forward drop and improve light-load efficiency. Use Value: Achieves 0.8–1.2 V body diode forward voltage and 40–60 ns trr, minimizing reverse recovery losses during dead-time conduction. |
| Industrial DC/DC Module | Telecom Board-Level Converter |
Use Scenario: Input-stage switch in 24 V to 12 V/5 V non-isolated converters powering PLC I/O, sensors, and actuators. IC Role / Device Role / Timing Role: Robust N-channel MOSFET with 20 V VDS rating and 138 A silicon-limited current for surge-tolerant operation. Use Value: Withstands 30 A single-pulse avalanche current (IAS) and 45 mJ energy (EAS), enhancing system reliability under line transients. |
Use Scenario: High-side switch in hot-swap and OR-ing circuits for redundant 48 V telecom power distribution. IC Role / Device Role / Timing Role: Fast-turning, low-Qg MOSFET enabling precise current limiting and fault isolation in backplane power systems. Use Value: 24 nC Qg (typ. at 4.5 V) supports rapid gate control with standard PMBus-compatible controllers, reducing fault response time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 20 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR822DP-T1-GE3 | Same PolarPAK® package and 20 V rating, but dual-N configuration (two independent 0.0034 Ω channels); higher total Qg (48 nC) due to duplicated gate structure. | Targeted at dual-phase or interleaved converter topologies requiring matched devices; not suitable for single-channel replacement. | Select only when dual-channel integration reduces board area or improves phase matching; requires layout revision for gate drive routing. |
| IRF6642TRPBF | 20 V N-channel in DirectFET® MX package; RDS(on) = 0.0032 Ω at 10 V but higher RthJA (24 °C/W max) and no top-side cooling capability. | Better suited for airflow-cooled or lower-power applications where PCB thermal relief is limited; lacks double-sided thermal path. | Prefer when existing layout uses DirectFET® footprint or when cost sensitivity outweighs thermal performance requirements. |
Compared with SiR822DP-T1-GE3 and IRF6642TRPBF, the SIE822DF-T1-GE3 uniquely combines single-channel simplicity, top-exposed drain for enhanced thermal transfer, and industry-leading 1.2 °C/W RthJC(drain), making it optimal for space-constrained, high-current VRM and POL designs demanding maximum power density.
Availability
SIE822DF-T1-GE3 is available at Aetrix Electronics and suitable for server VRM power stages, high-density POL converters, and industrial DC/DC modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for SIE822DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal management, and reliability.
The SIE822DF-T1-GE3 belongs to Vishay's PolarPAK® TrenchFET® family, engineered specifically for high-current, high-frequency DC/DC conversion in computing, telecom, and industrial power systems where thermal density and switching efficiency are critical.
FAQ
What is the maximum continuous drain current rating for the SIE822DF-T1-GE3?
The SIE822DF-T1-GE3 has a package-limited continuous drain current of 50 A when mounted on a 1" × 1" FR4 board at TC = 25 °C. Its silicon-limited current is 138 A, but thermal constraints define the practical operating limit. The device also supports 80 A pulsed drain current (IDM) and 30 A single-pulse avalanche current (IAS), confirming robust short-duration overload capability in the SIE822DF-T1-GE3.
Does the SIE822DF-T1-GE3 support logic-level gate drive?
Yes, the SIE822DF-T1-GE3 is fully specified for 4.5 V gate drive, with RDS(on) = 0.0055 Ω max at VGS = 4.5 V and ID = 14.5 A. Its gate threshold voltage (VGS(th)) ranges from 1.5 V to 3.0 V, ensuring reliable turn-on with standard 5 V logic outputs. This makes the SIE822DF-T1-GE3 suitable for use with common PWM controllers and gate drivers without level-shifting circuitry.
How is thermal management implemented in the SIE822DF-T1-GE3 PolarPAK® package?
The SIE822DF-T1-GE3 uses a top-exposed PolarPAK® package where pins 1, 5, 6, and 10 are electrically and thermally connected to the drain and form an exposed copper surface. This allows direct thermal interface to a heatsink or large PCB copper pour, achieving a maximum junction-to-case (drain top) thermal resistance of 1.2 °C/W. Unlike conventional packages, this double-sided cooling architecture significantly improves heat extraction without requiring thermal vias or complex stack-ups in the SIE822DF-T1-GE3.
Is the SIE822DF-T1-GE3 suitable for synchronous rectification applications?
Yes, the SIE822DF-T1-GE3 is explicitly designed for synchronous rectification, as confirmed by its low body diode forward voltage (VSD = 0.8–1.2 V at 10 A), fast reverse recovery time (trr = 40–60 ns), and low Qgd/Qgs ratio that prevents shoot-through. Its 20 V VDS rating and 0.0034 Ω RDS(on) make the SIE822DF-T1-GE3 ideal for secondary-side switching in 5 V and 3.3 V output DC/DC converters.
What is the gate charge profile of the SIE822DF-T1-GE3 and why does it matter?
The SIE822DF-T1-GE3 has a typical total gate charge (Qg) of 24 nC at VGS = 4.5 V and VDS = 10 V, with Qgs = 13 nC and Qgd = 5 nC. This low, well-partitioned charge enables fast, efficient switching with minimal driver power consumption - essential for high-frequency (>1 MHz) operation in modern VRM and POL converters where the SIE822DF-T1-GE3 is commonly deployed.
SIE822DF-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 10-PolarPAK® (S)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 18.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 78 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4200 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-PolarPAK® (S)
SIE822DF-T1-GE3 FAQ
1.How can I place an order for SIE822DF-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIE822DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIE822DF-T1-GE3 reliable?
The price and inventory of SIE822DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE822DF-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIE822DF-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE822DF-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIE822DF-T1-GE3?
SIE822DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIE822DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIE822DF-T1-GE3?
For technical support, including SIE822DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE822DF-T1-GE3 requirements.
6.How does Aetrix verify that SIE822DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIE822DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE822DF-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIE822DF-T1-GE3?
All SIE822DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE822DF-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIE822DF-T1-GE3 part is unused and in its original packaging.
Return procedure for SIE822DF-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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