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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE832DF-T1-E3

Name: SIE832DF-T1-E3
Brand: Vishay Siliconix
SKU: SIE832DF-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE832DF-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (S)

Datasheet:: SIE832DF-T1-E3.pdf

Description:: MOSFET N-CH 40V 50A 10POLARPAK

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Product details

Overview

SIE832DF-T1-E3 from Vishay Siliconix is an N-channel 40-V TrenchFET® Power MOSFET in a PolarPAK® package, delivering R_DS(on) = 0.0055 Ω at V_GS = 10 V and 103 A silicon-limited continuous drain current, optimized for high-efficiency synchronous rectification in VRM and point-of-load DC-DC converters.

For engineers reviewing the SIE832DF-T1-E3 datasheet, SIE832DF-T1-E3 pinout, SIE832DF-T1-E3 application, or SIE832DF-T1-E3 equivalent, this device offers ultra-low thermal resistance via double-sided cooling, 100% R_g and UIS testing, halogen-free compliance, and a top-exposed leadframe package enabling high-current, low-loss power switching in space-constrained board designs.

Technical Context

This MOSFET employs trench gate technology to achieve low on-resistance and fast switching with Q_gd/Q_gs ratio optimized to suppress shoot-through in synchronous buck stages. Its PolarPAK® package features a top-side drain-connected copper paddle for direct heatsinking and bottom-side source/gate terminals for PCB-level thermal management.

The device supports gate drive voltages from 4.5 V to 10 V, with V_GS(th) = 1.5–3.0 V and guaranteed 100% UIS ruggedness. Thermal performance is characterized by R_thJC(Drain) = 1.2 °C/W max and R_thJA = 24 °C/W max (t ≤ 10 s), enabling high-power density operation under transient load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V and 24 V input bus systems
R_DS(on) @ 10 V	0.0055 Ω - Enables <1 W conduction loss at 10 A, critical for high-efficiency POL converters
I_D (Silicon Limit)	103 A - Supports high peak currents in VRM applications without thermal runaway
Q_g @ 10 V	77 nC - Low gate charge enables efficient 500 kHz–1 MHz switching with moderate gate driver strength
R_thJC (Drain)	1.2 °C/W - Allows direct top-side heatsinking for >90 W power dissipation in compact layouts
Body Diode V_SD	0.8–1.2 V @ 10 A - Low forward drop reduces reverse recovery losses during dead-time conduction
Avalanche Energy E_AS	61 mJ - Confirmed single-pulse ruggedness for inductive switching stress in synchronous rectifiers

Pinout & Package

PolarPAK® package: 10-terminal, leadless, top-exposed copper drain paddle; dimensions 6.15 mm × 5.16 mm × 0.80 mm (D × E × A); RoHS-compliant, halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (Top-Side)	Exposed copper paddle for double-sided thermal interface - must be soldered to thermal pad or heatsink
2, 3, 7, 8	Source	Bottom-side terminals forming low-inductance return path; electrically tied to internal source metallization
4, 9	Gate	Isolated control inputs; dual gate pads reduce gate loop inductance and improve switching stability
-	Package Ground Reference	No dedicated GND pin - source terminals serve as reference; top drain is isolated from source

Key Features

Feature	Design Value
Ultra-low R_thJC (Drain)	1.2 °C/W max enables >90 W dissipation with minimal temperature rise using only top-side cooling
Low Q_gd/Q_gs ratio	Reduces Miller-induced turn-on risk during high-dV/dt transitions in synchronous rectifier operation
100% R_g tested	Ensures consistent gate resistance across production lots, critical for predictable switching timing
TrenchFET® architecture	Delivers 20% lower R_DS(on) vs. planar MOSFETs at same die size, improving current density in POL modules
Double-sided cooling capability	Top drain + bottom source terminals allow simultaneous thermal paths to heatsink and PCB ground plane

Applications

VRM Power Stage	Point-of-Load Converter
Use Scenario: High-current CPU/GPU voltage regulation in servers and AI accelerators requiring <0.8 V output at >100 A. IC Role / Device Role / Timing Role: High-side or synchronous rectifier switch in multiphase buck converter topology. Use Value: 0.0055 Ω R_DS(on) minimizes I²R losses at full load, while 103 A silicon limit supports phase interleaving without derating.	Use Scenario: Compact 3.3 V/5 V/12 V DC-DC conversion for FPGA, ASIC, or memory subsystems on dense PCBs. IC Role / Device Role / Timing Role: Primary power switch in high-frequency (≥1 MHz) buck regulator with tight layout constraints. Use Value: PolarPAK® package allows direct top-side heatsinking, eliminating need for large copper pours and enabling <1 cm² footprint per phase.
Synchronous Rectification	Industrial DC-DC Module
Use Scenario: Secondary-side switching in isolated 48 V–12 V telecom or datacom DC-DC converters. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Body diode V_SD = 0.8–1.2 V and fast t_rr = 85–130 ns enable clean commutation with minimal reverse recovery loss.	Use Scenario: High-reliability 24 V input to 5 V/3.3 V conversion in industrial PLCs and motor drives. IC Role / Device Role / Timing Role: Main power switch in ruggedized, thermally managed DC-DC module with extended temperature operation. Use Value: -55 °C to 150 °C operating range and 61 mJ avalanche energy ensure robustness against load dump and inductive transients.

VRM Power Stage

Point-of-Load Converter

Use Scenario: High-current CPU/GPU voltage regulation in servers and AI accelerators requiring <0.8 V output at >100 A.

IC Role / Device Role / Timing Role: High-side or synchronous rectifier switch in multiphase buck converter topology.

Use Value: 0.0055 Ω R_DS(on) minimizes I²R losses at full load, while 103 A silicon limit supports phase interleaving without derating.

Use Scenario: Compact 3.3 V/5 V/12 V DC-DC conversion for FPGA, ASIC, or memory subsystems on dense PCBs.

IC Role / Device Role / Timing Role: Primary power switch in high-frequency (≥1 MHz) buck regulator with tight layout constraints.

Use Value: PolarPAK® package allows direct top-side heatsinking, eliminating need for large copper pours and enabling <1 cm² footprint per phase.

Synchronous Rectification

Industrial DC-DC Module

Use Scenario: Secondary-side switching in isolated 48 V–12 V telecom or datacom DC-DC converters.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Body diode V_SD = 0.8–1.2 V and fast t_rr = 85–130 ns enable clean commutation with minimal reverse recovery loss.

Use Scenario: High-reliability 24 V input to 5 V/3.3 V conversion in industrial PLCs and motor drives.

IC Role / Device Role / Timing Role: Main power switch in ruggedized, thermally managed DC-DC module with extended temperature operation.

Use Value: -55 °C to 150 °C operating range and 61 mJ avalanche energy ensure robustness against load dump and inductive transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	40 V, R_DS(on) = 0.0042 Ω @ 10 V, 120 A silicon limit, PowerPAK® 8×8 package	Higher current rating but larger 8×8 mm footprint and no top-side cooling capability	Select when higher current headroom is needed and board space allows larger package
IRL8726PbF	30 V, R_DS(on) = 0.0037 Ω @ 10 V, 120 A, SO-8 package with standard bottom-side thermal path	Lower V_DS rating limits use to ≤24 V systems; lacks double-sided cooling and top-exposed drain	Select for cost-sensitive ≤24 V applications where top-side heatsinking is not required

Compared with SiR872DP-T1-GE3 and IRL8726PbF, the SIE832DF-T1-E3 uniquely combines 40 V rating, ultra-low thermal resistance via top-exposed drain, and compact 6.15 mm × 5.16 mm PolarPAK® footprint - making it optimal for space- and thermal-constrained VRM and POL designs where double-sided cooling is leveraged.

Availability

SIE832DF-T1-E3 is available at Aetrix Electronics and suitable for VRM power stages, point-of-load converters, and synchronous rectification circuits requiring stable component supply, high-current capability, and industry-standard lead-free compliance.

Supply support for SIE832DF-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIE832DF-T1-E3 belongs to Vishay's PolarPAK® TrenchFET® family, engineered specifically for high-density, high-efficiency DC-DC conversion in computing, telecom, and industrial power systems where thermal management and current density are critical.

FAQ

What is the maximum continuous drain current rating for the SIE832DF-T1-E3?

The SIE832DF-T1-E3 has a silicon-limited continuous drain current of 103 A at T_J = 150 °C and T_C = 25 °C, but its package-limited rating is 50 A under the same conditions. Designers must observe the lower of the two limits - typically 50 A for board-level thermal management - unless active top-side cooling is implemented to leverage the 103 A silicon capability. The SIE832DF-T1-E3 datasheet specifies both values explicitly in the Absolute Maximum Ratings table.

Does the SIE832DF-T1-E3 support gate drive at 4.5 V, and what is its R_DS(on) at that voltage?

Yes, the SIE832DF-T1-E3 is fully specified for 4.5 V gate drive, with R_DS(on) = 0.007 Ω (max) at V_GS = 4.5 V and I_D = 12 A. This makes the SIE832DF-T1-E3 compatible with standard 5 V logic-level drivers and ideal for applications where gate drive voltage is constrained, such as low-voltage POL regulators. The device's V_GS(th) range of 1.5–3.0 V ensures reliable turn-on even with marginal gate drive margins.

How is thermal management implemented in the SIE832DF-T1-E3 PolarPAK® package?

The SIE832DF-T1-E3 uses a PolarPAK® package with a top-exposed drain paddle that serves as a primary thermal path - enabling direct attachment to a heatsink or thermal plate - while source terminals on the bottom provide secondary conduction to the PCB. Its R_thJC(Drain) is rated at 1.2 °C/W max, allowing >90 W power dissipation with modest temperature rise. The SIE832DF-T1-E3 requires no exposed die; the leadframe-based encapsulation ensures mechanical robustness and repeatable solder joint formation on both sides.

Is the SIE832DF-T1-E3 suitable for synchronous rectification, and what body diode characteristics support that use?

Yes, the SIE832DF-T1-E3 is explicitly qualified for synchronous rectification, with a body diode forward voltage V_SD of 0.8–1.2 V at 10 A and reverse recovery time t_rr of 85–130 ns. Its low Q_rr (110–170 nC) and low Q_gd/Q_gs ratio minimize shoot-through risk and recovery loss during dead-time conduction. These parameters are measured and guaranteed per the SIE832DF-T1-E3 datasheet, confirming suitability in secondary-side switching of isolated DC-DC converters.

What is the lead-free and halogen-free status of the SIE832DF-T1-E3?

The SIE832DF-T1-E3 is lead (Pb)-free and complies with the RoHS directive 2002/95/EC. It is also halogen-free per IEC 61249-2-21, as confirmed in the official Vishay documentation (Document Number: 74414, Rev. C). The "-E3" suffix denotes lead-free packaging, while the related "-GE3" variant adds halogen-free qualification. Both variants share identical electrical and thermal specifications; the SIE832DF-T1-E3 meets environmental requirements for modern computing and industrial electronics without performance trade-offs.

SIE832DF-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (S)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (S)

SIE832DF-T1-E3 FAQ

1.How can I place an order for SIE832DF-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE832DF-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE832DF-T1-E3 reliable?

The price and inventory of SIE832DF-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE832DF-T1-E3 is usually 5 days.

3.What payment methods are accepted for SIE832DF-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE832DF-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE832DF-T1-E3?

SIE832DF-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE832DF-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE832DF-T1-E3?

For technical support, including SIE832DF-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE832DF-T1-E3 requirements.

6.How does Aetrix verify that SIE832DF-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SIE832DF-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE832DF-T1-E3 meets industry standards.

7.What is the process for return or replacement of SIE832DF-T1-E3?

All SIE832DF-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE832DF-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE832DF-T1-E3 part is unused and in its original packaging.

Return procedure for SIE832DF-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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