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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE832DF-T1-GE3

Name: SIE832DF-T1-GE3
Brand: Vishay Siliconix
SKU: SIE832DF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE832DF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (S)

Datasheet:: SIE832DF-T1-GE3.pdf

Description:: MOSFET N-CH 40V 50A 10POLARPAK

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Product details

Overview

SIE832DF-T1-GE3 from Vishay Siliconix is an N-channel 40-V TrenchFET® Power MOSFET in a PolarPAK® package, delivering R_DS(on) = 5.5 mΩ at V_GS = 10 V and 7.0 mΩ at V_GS = 4.5 V, with 103-A silicon-limited continuous drain current and 50-A package-limited current, optimized for high-efficiency synchronous rectification in VRM and point-of-load DC/DC converters.

For engineers reviewing the SIE832DF-T1-GE3 datasheet, SIE832DF-T1-GE3 pinout, SIE832DF-T1-GE3 application, or SIE832DF-T1-GE3 equivalent, key selection criteria include ultra-low thermal resistance (R_thJC = 1.0 °C/W to drain top), double-sided cooling capability, low Q_gd/Q_gs ratio to prevent shoot-through, and 100% R_g and UIS testing for robustness in high-frequency switching power stages.

Technical Context

This MOSFET employs trench gate technology to achieve low on-resistance and fast switching performance, with gate charge parameters (Q_g = 51–77 nC at 10 V, Q_gd = 7 nC) enabling efficient operation in synchronous buck converters operating above 300 kHz. Its body diode exhibits t_rr = 85–130 ns and Q_rr = 110–170 nC, supporting clean commutation in hard-switched topologies.

The PolarPAK® package features a top-exposed drain pad connected to pins 1, 5, 6, and 10, enabling direct thermal interface to heatsinks or PCB copper on both sides. The leadframe-based encapsulation ensures consistent layout regardless of die size and eliminates die exposure while maintaining low junction-to-case thermal resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage suitable for 12-V and 24-V input DC/DC systems with margin.
R_DS(on) @ 10 V	5.5 mΩ - Enables <1 W conduction loss at 14 A, critical for high-current POL efficiency.
R_DS(on) @ 4.5 V	7.0 mΩ - Ensures strong enhancement-mode turn-on with standard 5-V gate drivers.
Q_g (10 V)	51–77 nC - Low total gate charge reduces driver power loss and enables faster switching transitions.
R_thJC (Drain)	1.0–1.2 °C/W - Ultra-low junction-to-case thermal resistance supports double-sided cooling and high-power density layouts.
I_D (Package)	50 A - Package-limited continuous current defines safe steady-state operation on standard FR4 PCBs.
V_GS(th)	1.5–3.0 V - Tight threshold range ensures predictable turn-on behavior across temperature and process variation.

Pinout & Package

PolarPAK® package (Option S), 10-pin leadless surface-mount device measuring 6.15 mm × 5.16 mm × 0.80 mm (D × E × A), with top-exposed drain pad electrically connected to pins 1, 5, 6, and 10 for dual-side thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (D)	Electrically tied to top-exposed metal pad; primary thermal path to heatsink or PCB copper pour.
2, 3, 7, 8	Source (S)	Four parallel source terminals minimize source inductance and improve current sharing in high-di/dt applications.
4, 9	Gate (G)	Dual gate connections reduce gate loop inductance and suppress oscillation during fast switching transitions.

Key Features

Feature	Design Value
Ultra-low R_thJC (Drain)	1.0 °C/W enables >100 W dissipation with minimal ΔT to heatsink, supporting compact VRM designs.
Low Q_gd/Q_gs ratio	Reduces Miller-induced gate voltage overshoot, preventing unintended turn-on and shoot-through in synchronous rectifiers.
100% R_g tested	Ensures gate resistance consistency (1.1–1.7 Ω), critical for predictable gate drive timing and EMI control.
100% UIS tested	Validates ruggedness under unclamped inductive switching stress, essential for reliability in POL transient events.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and computing applications.

Applications

VRM Power Stage	Point-of-Load Converter
Use Scenario: High-current CPU/GPU voltage regulation module delivering up to 100 A at 0.8–1.8 V from 12-V bus. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 500–1000 kHz. Use Value: 5.5-mΩ R_DS(on) minimizes conduction loss; 1.0 °C/W R_thJC allows direct thermal coupling to VRM heatsink for stable TJ < 125 °C.	Use Scenario: Compact 25-A isolated or non-isolated DC/DC module powering FPGA I/O banks or ASIC core rails. IC Role / Device Role / Timing Role: Secondary-side switch in synchronous flyback or buck converter operating at 300–600 kHz. Use Value: Dual gate pins (4, 9) and four source pins (2, 3, 7, 8) reduce parasitic inductance, improving efficiency and reducing EMI in space-constrained modules.
Synchronous Rectification	Server PSU Output Stage
Use Scenario: Secondary-side rectification in 48-V input telecom or datacom DC/DC bricks delivering 50–80 A at 3.3–12 V. IC Role / Device Role / Timing Role: Main synchronous rectifier replacing Schottky diodes in LLC or phase-shifted full-bridge topologies. Use Value: Body diode t_rr = 85 ns and Q_rr = 110 nC enable clean zero-voltage switching transitions, reducing reverse recovery loss and EMI.	Use Scenario: High-density 1U server power supply output stage delivering 200+ A at 12 V with <95% efficiency. IC Role / Device Role / Timing Role: Parallel-connected low-side FET in interleaved multiphase buck regulator. Use Value: Four parallel source terminals and top-exposed drain allow uniform current sharing and thermal spreading across multiple devices without thermal hotspots.

VRM Power Stage

Point-of-Load Converter

Use Scenario: High-current CPU/GPU voltage regulation module delivering up to 100 A at 0.8–1.8 V from 12-V bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 500–1000 kHz.

Use Value: 5.5-mΩ R_DS(on) minimizes conduction loss; 1.0 °C/W R_thJC allows direct thermal coupling to VRM heatsink for stable TJ < 125 °C.

Use Scenario: Compact 25-A isolated or non-isolated DC/DC module powering FPGA I/O banks or ASIC core rails.

IC Role / Device Role / Timing Role: Secondary-side switch in synchronous flyback or buck converter operating at 300–600 kHz.

Use Value: Dual gate pins (4, 9) and four source pins (2, 3, 7, 8) reduce parasitic inductance, improving efficiency and reducing EMI in space-constrained modules.

Synchronous Rectification

Server PSU Output Stage

Use Scenario: Secondary-side rectification in 48-V input telecom or datacom DC/DC bricks delivering 50–80 A at 3.3–12 V.

IC Role / Device Role / Timing Role: Main synchronous rectifier replacing Schottky diodes in LLC or phase-shifted full-bridge topologies.

Use Value: Body diode t_rr = 85 ns and Q_rr = 110 nC enable clean zero-voltage switching transitions, reducing reverse recovery loss and EMI.

Use Scenario: High-density 1U server power supply output stage delivering 200+ A at 12 V with <95% efficiency.

IC Role / Device Role / Timing Role: Parallel-connected low-side FET in interleaved multiphase buck regulator.

Use Value: Four parallel source terminals and top-exposed drain allow uniform current sharing and thermal spreading across multiple devices without thermal hotspots.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	Higher R_DS(on) = 6.2 mΩ @ 10 V; same PolarPAK footprint but different pinout (gate on pin 1).	Requires PCB layout revision due to gate pin relocation; lower thermal performance (R_thJC = 1.5 °C/W).	Select only if legacy IRF6642 design reuse is required; not drop-in compatible.
SiR872DP-T1-GE3	Same 40-V rating, lower R_DS(on) = 4.0 mΩ @ 10 V, but larger 5×6 mm PowerPAK® SO-8 package with different thermal path.	Higher current capability (120 A silicon limit), but single-sided cooling only; requires new thermal interface design.	Choose when higher current or lower R_DS(on) is prioritized over double-sided cooling and board area.

Compared with IRF6642TRPBF and SiR872DP-T1-GE3, the SIE832DF-T1-GE3 uniquely combines ultra-low R_thJC, dual-side cooling, and tight Q_gd/Q_gs ratio-making it optimal for thermally constrained, high-frequency synchronous rectification where layout flexibility and thermal headroom are critical.

Availability

SIE832DF-T1-GE3 is available at Aetrix Electronics and suitable for VRM power stages, point-of-load converters, and synchronous rectification circuits requiring stable component supply, halogen-free compliance, and high-reliability 100% UIS-tested MOSFETs.

Supply support for SIE832DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal management, and reliability.

The SIE832DF-T1-GE3 belongs to Vishay's TrenchFET® PolarPAK® family, engineered specifically for high-current, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies where thermal density and switching robustness are paramount.

FAQ

What is the maximum continuous drain current rating for the SIE832DF-T1-GE3?

The SIE832DF-T1-GE3 has a silicon-limited continuous drain current of 103 A at T_J = 150 °C, but its package-limited rating is 50 A at T_C = 25 °C. This 50-A value reflects practical thermal limits on standard FR4 PCBs and must be used for layout and thermal design. Derating applies above 25 °C case temperature per the published derating curve.

Does the SIE832DF-T1-GE3 support double-sided cooling?

Yes, the SIE832DF-T1-GE3 uses the PolarPAK® package with a top-exposed drain pad connected to pins 1, 5, 6, and 10, enabling direct thermal interface to a heatsink or copper plane on the board's top side while the bottom side remains soldered to the PCB. This dual-path cooling achieves R_thJC = 1.0 °C/W to the drain top, significantly enhancing thermal performance over conventional packages.

What gate drive voltage is required to fully enhance the SIE832DF-T1-GE3?

The SIE832DF-T1-GE3 is specified with V_GS(th) = 1.5–3.0 V and achieves R_DS(on) = 7.0 mΩ at V_GS = 4.5 V, confirming full enhancement with standard 5-V logic-level gate drivers. For lowest on-resistance (5.5 mΩ), a 10-V gate drive is recommended, but the device remains strongly enhanced and controllable across the 4.5–10 V range.

Is the SIE832DF-T1-GE3 suitable for synchronous rectification in LLC resonant converters?

Yes, the SIE832DF-T1-GE3 is well-suited for synchronous rectification in LLC converters due to its fast body diode (t_rr = 85–130 ns, Q_rr = 110–170 nC) and low Q_gd/Q_gs ratio, which minimizes Miller-induced turn-on risk during zero-voltage switching transitions. Its 40-V rating matches typical 12-V and 24-V output stages in telecom/datacom LLC designs.

What does "-GE3" signify in the SIE832DF-T1-GE3 part number?

The "-GE3" suffix in SIE832DF-T1-GE3 indicates that the device is lead (Pb)-free and halogen-free, compliant with both RoHS Directive 2002/95/EC and IEC 61249-2-21. It distinguishes this variant from the "-E3" version (lead-free only) and confirms full environmental compliance for use in green electronics manufacturing.

SIE832DF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (S)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (S)

SIE832DF-T1-GE3 FAQ

1.How can I place an order for SIE832DF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE832DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE832DF-T1-GE3 reliable?

The price and inventory of SIE832DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE832DF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIE832DF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE832DF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE832DF-T1-GE3?

SIE832DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE832DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE832DF-T1-GE3?

For technical support, including SIE832DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE832DF-T1-GE3 requirements.

6.How does Aetrix verify that SIE832DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIE832DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE832DF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIE832DF-T1-GE3?

All SIE832DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE832DF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE832DF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIE832DF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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