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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE854DF-T1-E3

Name: SIE854DF-T1-E3
Brand: Vishay Siliconix
SKU: SIE854DF-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE854DF-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (L)

Datasheet:: SIE854DF-T1-E3.pdf

Description:: MOSFET N-CH 100V 60A 10POLARPAK

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Product details

Overview

SIE854DF-T1-E3 from Vishay Siliconix is an N-channel 100-V (D-S) TrenchFET® Power MOSFET in a PolarPAK® package, delivering 60 A continuous drain current (package-limited), 0.0142 Ω R_DS(on) at V_GS = 10 V, and 50 nC total gate charge - optimized for primary-side switching in high-efficiency DC-DC converters.

For engineers reviewing the SIE854DF-T1-E3 datasheet, SIE854DF-T1-E3 pinout, SIE854DF-T1-E3 application, or SIE854DF-T1-E3 equivalent, key selection criteria include its ultra-low thermal resistance (R_thJC(Drain) = 0.8 °C/W typ.), double-sided cooling capability, and low Q_gd/Q_gs ratio to prevent shoot-through in half-bridge topologies.

Technical Context

This MOSFET uses Vishay's TrenchFET® silicon process with a leadframe-based PolarPAK® package where the top surface (drain-connected) and bottom pads (source/gate/drain) enable simultaneous top- and bottom-side thermal management. Its 100 V V_DS rating and 2.5–4.4 V V_GS(th) support robust gate drive margin in industrial and telecom power stages.

The device features 100 % R_g and UIS testing, halogen-free construction per IEC 61249-2-21, and RoHS compliance. Thermal design is guided by R_thJA = 20 °C/W (t ≤ 10 s) and R_thJC(Source) = 2.2 °C/W, enabling high-power density layouts on FR4 boards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V input DC-DC converters up to 100 V bus transients
R_DS(on)	0.0142 Ω @ V_GS = 10 V - enables <1 W conduction loss at 60 A, critical for >95 % efficiency designs
I_D (cont.)	60 A (package-limited) - defines maximum safe steady-state current without derating on 1" × 1" FR4
Q_g	50 nC (typ.) - determines gate driver power requirement and switching speed in hard-switched topologies
R_thJC(Drain)	0.8 °C/W (typ.) - allows direct heatsink attachment to top surface for double-sided cooling architecture
V_GS(th)	2.5–4.4 V - ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers
C_iss	3100 pF - impacts gate drive loop stability and EMI filtering requirements in high-frequency operation

Pinout & Package

PolarPAK® package: leadless, top-exposed drain (pins 1, 5, 6, 10 connected to top surface), bottom-side terminals for source, gate, and drain connections. Enables double-sided cooling with no die exposure.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10 (Top Surface)	Drain (D)	Electrically and thermally connected to top copper pad - used for direct heatsinking and high-current drain return path
2, 3, 4, 7, 8, 9 (Bottom)	Source (S)	Primary source connection points - distributed for low-inductance layout and thermal spreading on PCB
Bottom Pad (Center)	Gate (G)	Single dedicated gate terminal - isolated from drain/source for stable Miller immunity and controlled turn-on

Key Features

Feature	Design Value
Ultra-low R_thJC(Drain)	0.8 °C/W typical - enables >100 W dissipation with minimal temperature rise when top-surface heatsinked
Low Q_gd/Q_gs ratio	~0.81 (13/16) - reduces risk of cross-conduction during dead-time transitions in synchronous rectifiers
100 % R_g and UIS tested	Guarantees gate robustness and avalanche energy handling (E_AS = 80 mJ) in real-world fault conditions
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and EU Directive 2002/95/EC - required for green electronics certification

Applications

Primary Side Switch	Half-Bridge Topology
Use Scenario: High-voltage primary switch in isolated flyback or forward converters operating from 36–75 V telecom input rails. IC Role / Device Role / Timing Role: Main power switching element controlling energy transfer into transformer primary winding. Use Value: 100 V V_DS and 60 A I_D allow single-device operation at >300 W output with <1.5 W conduction loss.	Use Scenario: Upper or lower switch in non-isolated buck-derived topologies for server VRMs or POL converters. IC Role / Device Role / Timing Role: High-side or low-side switching transistor synchronized with complementary PWM signal. Use Value: Low Q_gd/Q_gs and fast switching (t_d(on) = 15 ns typ.) minimize shoot-through risk and improve efficiency at 300–500 kHz.
Industrial DC-DC Converter	Telecom Power Supply
Use Scenario: Input-stage switch in ruggedized 24–48 V input DC-DC modules for factory automation equipment. IC Role / Device Role / Timing Role: Primary switching transistor handling repetitive load dumps and line surges. Use Value: 80 mJ E_AS and 40 A I_AS provide margin against unclamped inductive switching events.	Use Scenario: Main switch in -48 V telecom rectifier front-end or intermediate bus converter. IC Role / Device Role / Timing Role: High-reliability power switch operating continuously at elevated ambient temperatures. Use Value: R_thJA = 20 °C/W (t ≤ 10 s) and T_J range of -55 to +150 °C ensure stable operation in sealed chassis environments.

Primary Side Switch

Half-Bridge Topology

Use Scenario: High-voltage primary switch in isolated flyback or forward converters operating from 36–75 V telecom input rails.

IC Role / Device Role / Timing Role: Main power switching element controlling energy transfer into transformer primary winding.

Use Value: 100 V V_DS and 60 A I_D allow single-device operation at >300 W output with <1.5 W conduction loss.

Use Scenario: Upper or lower switch in non-isolated buck-derived topologies for server VRMs or POL converters.

IC Role / Device Role / Timing Role: High-side or low-side switching transistor synchronized with complementary PWM signal.

Use Value: Low Q_gd/Q_gs and fast switching (t_d(on) = 15 ns typ.) minimize shoot-through risk and improve efficiency at 300–500 kHz.

Industrial DC-DC Converter

Telecom Power Supply

Use Scenario: Input-stage switch in ruggedized 24–48 V input DC-DC modules for factory automation equipment.

IC Role / Device Role / Timing Role: Primary switching transistor handling repetitive load dumps and line surges.

Use Value: 80 mJ E_AS and 40 A I_AS provide margin against unclamped inductive switching events.

Use Scenario: Main switch in -48 V telecom rectifier front-end or intermediate bus converter.

IC Role / Device Role / Timing Role: High-reliability power switch operating continuously at elevated ambient temperatures.

Use Value: R_thJA = 20 °C/W (t ≤ 10 s) and T_J range of -55 to +150 °C ensure stable operation in sealed chassis environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8721TRPBF	R_DS(on) = 0.0135 Ω @ 10 V, but Q_g = 32 nC - lower gate charge, higher R_thJC (1.2 °C/W)	Optimized for higher-frequency switching (>1 MHz); less suitable for double-sided cooling	Prefer IRF8721TRPBF when gate drive power is constrained and top-side heatsinking is unavailable.
IXFH120N10L2	R_DS(on) = 0.0095 Ω @ 10 V, but larger TO-247 package - higher thermal mass, no top-side cooling interface	Better for high-pulse-current surge handling; incompatible with compact PolarPAK® board space	Choose IXFH120N10L2 only when absolute lowest R_DS(on) is prioritized over board area and dual-sided thermal management.

Compared with IRF8721TRPBF and IXFH120N10L2, the SIE854DF-T1-E3 uniquely combines ultra-low R_thJC(Drain), top-exposed drain for double-sided cooling, and balanced Q_g/R_DS(on) - making it optimal for space-constrained, high-power-density telecom and industrial DC-DC designs requiring thermal headroom on both PCB sides.

Availability

SIE854DF-T1-E3 is available at Aetrix Electronics and suitable for primary side switching, half-bridge topologies, and industrial DC-DC converters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.

Supply support for SIE854DF-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The SIE854DF-T1-E3 belongs to Vishay's PolarPAK® TrenchFET® product line, engineered specifically for high-current, high-efficiency power conversion systems where double-sided thermal management and low gate charge are critical design requirements.

FAQ

What is the maximum continuous drain current rating for SIE854DF-T1-E3?

The SIE854DF-T1-E3 has a package-limited continuous drain current of 60 A at T_C = 25 °C, and a silicon-limited rating of 64 A. Derating applies above 25 °C case temperature - at T_C = 70 °C, the rated current drops to 52 A. These values assume proper PCB thermal design per the datasheet's 1" × 1" FR4 mounting condition.

Does SIE854DF-T1-E3 support double-sided cooling, and how is it implemented?

Yes, the SIE854DF-T1-E3 supports double-sided cooling via its PolarPAK® package: the top surface (pins 1, 5, 6, 10) is electrically and thermally connected to the drain, allowing direct heatsink attachment, while the bottom-side source and gate terminals conduct heat into the PCB. This architecture reduces total thermal resistance and improves power density in the SIE854DF-T1-E3.

What is the gate threshold voltage range for SIE854DF-T1-E3, and how does it affect drive compatibility?

The SIE854DF-T1-E3 has a V_GS(th) range of 2.5 V to 4.4 V at I_D = 250 µA. This ensures reliable turn-on with standard 5 V logic-level gate drivers and full enhancement with 10 V drive, while maintaining noise immunity against spurious turn-on in noisy power environments - a key behavior confirmed for the SIE854DF-T1-E3 in its absolute maximum ratings table.

Is SIE854DF-T1-E3 halogen-free and RoHS-compliant?

Yes, the SIE854DF-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with the RoHS directive 2002/95/EC. This is explicitly stated in the ordering information and features section of the official Vishay datasheet (Document Number: 69824, Rev. B), confirming environmental compliance for the exact SIE854DF-T1-E3 part number.

What is the total gate charge (Q_g) of SIE854DF-T1-E3, and why is it important for switching performance?

The SIE854DF-T1-E3 has a typical total gate charge (Q_g) of 50 nC at V_DS = 50 V, V_GS = 10 V, and I_D = 13.2 A. This value directly determines gate driver power consumption and influences switching transition times - lower Q_g enables faster turn-on/turn-off, reducing switching losses in high-frequency applications where the SIE854DF-T1-E3 is commonly deployed.

SIE854DF-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (L)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14.2mOhm @ 13.2A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (L)

SIE854DF-T1-E3 FAQ

1.How can I place an order for SIE854DF-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE854DF-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE854DF-T1-E3 reliable?

The price and inventory of SIE854DF-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE854DF-T1-E3 is usually 5 days.

3.What payment methods are accepted for SIE854DF-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE854DF-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE854DF-T1-E3?

SIE854DF-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE854DF-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE854DF-T1-E3?

For technical support, including SIE854DF-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE854DF-T1-E3 requirements.

6.How does Aetrix verify that SIE854DF-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SIE854DF-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE854DF-T1-E3 meets industry standards.

7.What is the process for return or replacement of SIE854DF-T1-E3?

All SIE854DF-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE854DF-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE854DF-T1-E3 part is unused and in its original packaging.

Return procedure for SIE854DF-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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