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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE854DF-T1-GE3

Name: SIE854DF-T1-GE3
Brand: Vishay Siliconix
SKU: SIE854DF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE854DF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (L)

Datasheet:: SIE854DF-T1-GE3.pdf

Description:: MOSFET N-CH 100V 60A 10POLARPAK

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Product details

Overview

SIE854DF-T1-GE3 from Vishay Siliconix is an N-channel 100-V (D-S) TrenchFET® Power MOSFET in a PolarPAK® package, delivering R_DS(on) = 0.0142 Ω at V_GS = 10 V, 60 A continuous drain current (package-limited), and 50 nC total gate charge - optimized for primary-side switching and half-bridge topologies in high-efficiency SMPS.

For engineers reviewing the SIE854DF-T1-GE3 datasheet, SIE854DF-T1-GE3 pinout, SIE854DF-T1-GE3 application, or SIE854DF-T1-GE3 equivalent, key selection criteria include its ultra-low thermal resistance (R_thJC(Drain) = 0.8 °C/W), halogen-free and RoHS-compliant construction, double-sided cooling capability, and low Q_gd/Q_gs ratio to prevent shoot-through.

Technical Context

This MOSFET uses trench-gate silicon technology with a top-exposed PolarPAK® leadframe package enabling direct thermal coupling to heatsinks on both top and bottom surfaces. Its gate drive characteristics - including 16 nC Q_gs, 13 nC Q_gd, and 1–1.5 Ω gate resistance - support fast, controlled switching in hard-switched converters.

The device features guaranteed 100% R_g and UIS testing, with a body diode exhibiting V_SD = 0.8–1.2 V at I_S = 10 A and t_rr = 70–110 ns under specified dI/dt conditions - critical for synchronous rectification and freewheeling paths in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side operation in 48 V–96 V input DC-DC and offline flyback/LLC designs
R_DS(on)	0.0142 Ω @ V_GS = 10 V - enables <1 W conduction loss at 60 A, reducing thermal load in high-current nodes
I_D (cont.)	60 A (package-limited) - defines maximum steady-state current handling without derating on 1"×1" FR4
Q_g	50 nC (typ.) - determines gate driver power requirement and switching speed in 100–500 kHz applications
R_thJC (Drain)	0.8 °C/W (typ.) - allows >100 W dissipation with modest top-side heatsinking, enabling compact power stage layout
V_GS(th)	2.5–4.4 V - ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding false triggering
C_iss	3100 pF - impacts gate drive loop stability and EMI filtering requirements in high-dV/dt environments

Pinout & Package

PolarPAK® package: leadless, top-exposed drain paddle with integrated source/gate terminals; designed for double-sided cooling and zero die exposure - same footprint regardless of die size.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (D)	Top-surface-connected drain terminals - enable low-inductance, high-current path and direct thermal interface to heatsink
2, 3, 4, 7, 8, 9	Source (S)	Bottom-side source connections - form low-impedance return path and thermal conduction to PCB ground plane
10 (shared)	Gate (G)	Single gate terminal located adjacent to drain pins - minimizes gate loop inductance for fast, oscillation-free switching

Key Features

Feature	Design Value
Ultra-low R_thJC(Drain)	0.8 °C/W typical - enables >100 W power dissipation with minimal top-side heatsink mass
Low Q_gd/Q_gs ratio	13/16 ≈ 0.81 - suppresses Miller-induced shoot-through during hard commutation in half-bridges
100 % R_g and UIS tested	Guaranteed gate resistance and unclamped inductive switching robustness - reduces qualification overhead for industrial power designs
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - satisfies environmental compliance for global OEM shipments
Double-sided cooling architecture	Top-exposed drain + bottom-source layout - delivers up to 2× thermal performance vs. standard SO-8 in space-constrained layouts

Applications

Server VRM Primary Switch	Industrial Half-Bridge Inverter
Use Scenario: High-current, high-frequency voltage regulation in 48 V server power supplies with strict efficiency targets. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300–600 kHz with tight dead-time control. Use Value: 0.0142 Ω R_DS(on) and 50 nC Q_g reduce combined conduction and switching losses by ≥15% vs. legacy 100 V MOSFETs in same footprint.	Use Scenario: Motor drive output stage in 24–48 V industrial PLC modules requiring robust short-circuit tolerance. IC Role / Device Role / Timing Role: High-side N-channel switch in complementary half-bridge configuration with bootstrap gate drive. Use Value: 100% UIS-tested ruggedness and 40 A single-pulse avalanche rating ensure survival during motor stall or cable fault events.
Telecom DC-DC Converter	EV Onboard Charger PFC Stage
Use Scenario: Isolated 48 V–12 V intermediate bus converter in telecom shelf systems with forced-air cooling. IC Role / Device Role / Timing Role: Main switching FET in active-clamp forward topology with 200–350 kHz operation. Use Value: 0.8 °C/W R_thJC(Drain) allows direct top-side heatsink mounting, eliminating thermal vias and improving long-term reliability under airflow constraints.	Use Scenario: Boost switch in 3.3 kW OBC PFC front-end operating at 65–100 kHz with high line-voltage transients. IC Role / Device Role / Timing Role: Fast-switching, high-voltage boost transistor with low C_oss (250 pF) and soft-recovery body diode. Use Value: 70–110 ns t_rr and 195–300 nC Q_rr minimize reverse recovery losses and EMI generation during zero-voltage switching transitions.

Server VRM Primary Switch

Industrial Half-Bridge Inverter

Use Scenario: High-current, high-frequency voltage regulation in 48 V server power supplies with strict efficiency targets.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300–600 kHz with tight dead-time control.

Use Value: 0.0142 Ω R_DS(on) and 50 nC Q_g reduce combined conduction and switching losses by ≥15% vs. legacy 100 V MOSFETs in same footprint.

Use Scenario: Motor drive output stage in 24–48 V industrial PLC modules requiring robust short-circuit tolerance.

IC Role / Device Role / Timing Role: High-side N-channel switch in complementary half-bridge configuration with bootstrap gate drive.

Use Value: 100% UIS-tested ruggedness and 40 A single-pulse avalanche rating ensure survival during motor stall or cable fault events.

Telecom DC-DC Converter

EV Onboard Charger PFC Stage

Use Scenario: Isolated 48 V–12 V intermediate bus converter in telecom shelf systems with forced-air cooling.

IC Role / Device Role / Timing Role: Main switching FET in active-clamp forward topology with 200–350 kHz operation.

Use Value: 0.8 °C/W R_thJC(Drain) allows direct top-side heatsink mounting, eliminating thermal vias and improving long-term reliability under airflow constraints.

Use Scenario: Boost switch in 3.3 kW OBC PFC front-end operating at 65–100 kHz with high line-voltage transients.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage boost transistor with low C_oss (250 pF) and soft-recovery body diode.

Use Value: 70–110 ns t_rr and 195–300 nC Q_rr minimize reverse recovery losses and EMI generation during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8721TRPBF	R_DS(on) = 0.0135 Ω @ 10 V but higher Q_g = 58 nC; TO-252 package with single-sided cooling only	Lacks double-sided thermal path; unsuitable where top-side heatsinking is required	Choose IRF8721TRPBF only when board-level thermal design relies solely on PCB copper and no top heatsink is used.
IXTP110N10T	Higher R_DS(on) = 0.018 Ω @ 10 V; TO-220 package; no halogen-free certification	Lower efficiency at high current; not compliant with IEC 61249-2-21	Select IXTP110N10T only for cost-sensitive, non-regulated industrial applications where halogen-free status is not mandated.

Compared with IRF8721TRPBF and IXTP110N10T, the SIE854DF-T1-GE3 provides superior thermal management via PolarPAK® double-sided cooling, lower Q_gd/Q_gs for shoot-through immunity, and full halogen-free compliance - making it the preferred choice for high-density, thermally constrained, and globally shipped power systems.

Availability

SIE854DF-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial half-bridge inverters, and telecom DC-DC converters requiring stable component supply, halogen-free compliance, and high-current switching performance.

Supply support for SIE854DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIE854DF-T1-GE3 belongs to Vishay's PolarPAK® TrenchFET® family - engineered specifically for high-power-density, thermally demanding applications such as server power, industrial motor drives, and telecom infrastructure where double-sided cooling and low R_thJC are critical.

FAQ

What is the maximum continuous drain current rating for the SIE854DF-T1-GE3?

The SIE854DF-T1-GE3 has a package-limited continuous drain current of 60 A at T_C = 25 °C, and 52 A at T_C = 70 °C. The silicon limit is 64 A, but the PolarPAK® package constrains operation to 60 A under standard thermal conditions. Derating curves in the datasheet show linear reduction above 25 °C case temperature.

Does the SIE854DF-T1-GE3 support double-sided cooling, and how is it implemented?

Yes, the SIE854DF-T1-GE3 implements double-sided cooling via its PolarPAK® package: the top surface (pins 1, 5, 6, 10) is electrically and thermally connected to the drain, enabling direct heatsink attachment, while the bottom-side source terminals (pins 2, 3, 4, 7, 8, 9) conduct heat into the PCB. This architecture achieves R_thJC(Drain) = 0.8 °C/W and R_thJC(Source) = 2.2 °C/W.

What is the gate threshold voltage range for the SIE854DF-T1-GE3, and how does it affect drive compatibility?

The SIE854DF-T1-GE3 has a gate threshold voltage V_GS(th) of 2.5–4.4 V at I_D = 250 µA. This range ensures compatibility with both 5 V logic-level and 10 V standard gate drivers, providing margin against false turn-on while maintaining strong enhancement-mode behavior. The negative temperature coefficient (−10 mV/°C) further improves thermal stability during overload conditions.

Is the SIE854DF-T1-GE3 suitable for avalanche energy handling, and what is its rated single-pulse capability?

Yes, the SIE854DF-T1-GE3 is 100% unclamped inductive switching (UIS) tested. Its rated single-pulse avalanche energy E_AS is 80 mJ at I_AS = 40 A and L = 0.1 mH. This ruggedness supports reliable operation in inductive load switching, motor drive freewheeling, and fault-tolerant PFC stages without external snubbers in many cases.

How does the low Q_gd/Q_gs ratio of the SIE854DF-T1-GE3 improve half-bridge reliability?

The SIE854DF-T1-GE3 has Q_gd = 13 nC and Q_gs = 16 nC, yielding a Q_gd/Q_gs ratio of ~0.81 - significantly lower than conventional MOSFETs. This reduces Miller plateau duration and mitigates unintended turn-on during high dV/dt cross-conduction events, directly improving shoot-through immunity in half-bridge and full-bridge topologies where timing margins are tight.

SIE854DF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (L)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14.2mOhm @ 13.2A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (L)

SIE854DF-T1-GE3 FAQ

1.How can I place an order for SIE854DF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE854DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE854DF-T1-GE3 reliable?

The price and inventory of SIE854DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE854DF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIE854DF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE854DF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE854DF-T1-GE3?

SIE854DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE854DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE854DF-T1-GE3?

For technical support, including SIE854DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE854DF-T1-GE3 requirements.

6.How does Aetrix verify that SIE854DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIE854DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE854DF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIE854DF-T1-GE3?

All SIE854DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE854DF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE854DF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIE854DF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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