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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE864DF-T1-GE3

Name: SIE864DF-T1-GE3
Brand: Vishay Siliconix
SKU: SIE864DF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE864DF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (U)

Datasheet:: SIE864DF-T1-GE3.pdf

Description:: MOSFET N-CH 30V 45A 10POLARPAK

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Product details

Overview

SIE864DF-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Gen III Power MOSFET in a PolarPAK® package, delivering 45 A continuous drain current at T_C = 25 °C, R_DS(on) = 0.0056 Ω at V_GS = 10 V, and ultra-low thermal resistance for double-sided cooling-used in high-side switch and VRM/DC-DC converter applications.

For engineers reviewing the SIE864DF-T1-GE3 datasheet, SIE864DF-T1-GE3 pinout, SIE864DF-T1-GE3 application, or SIE864DF-T1-GE3 equivalent, key selection criteria include its 30-V V_DS, 11.9 nC total gate charge at 4.5 V drive, 0.8–1.2 V body diode forward voltage, and top-exposed drain thermal path enabling high-power density server and POL designs.

Technical Context

This MOSFET employs TrenchFET® Gen III silicon technology with optimized gate charge ratio (Q_gd/Q_gs) to suppress shoot-through in synchronous buck stages. Its PolarPAK® package integrates a leadframe-based encapsulation where the top surface connects directly to pins 1, 5, 6, and 10-forming a low-inductance, thermally efficient drain node.

The device is fully characterized for UIS and R_g testing, rated for ±20 V gate-source voltage, and specified across -55 °C to +150 °C junction temperature range. Thermal performance is defined by R_thJC(Drain) = 4 °C/W (typ.) and R_thJA = 20 °C/W (t ≤ 10 s), supporting high-efficiency, high-current switching in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24-V input DC/DC and VRM systems
R_DS(on)	0.0056 Ω at V_GS = 10 V - Enables <1.1 W conduction loss at 20 A, critical for POL efficiency
I_D (cont.)	45 A at T_C = 25 °C - Package-limited current rating supports high-current server power rails
Q_g	11.9 nC at V_GS = 4.5 V - Low gate charge enables fast switching with standard 3.3-V/5-V gate drivers
V_SD	0.8–1.2 V at I_S = 10 A - Body diode forward voltage impacts synchronous rectifier dead-time design
R_thJC(Drain)	4 °C/W (typ.) - Top-exposed drain allows direct heatsink attachment for double-sided cooling
Q_rr	24–36 nC - Reverse recovery charge influences EMI and cross-conduction loss in hard-switched topologies

Pinout & Package

PolarPAK® is a leadless, top-exposed, leadframe-based package with die not exposed; thermal and electrical performance relies on solder joint integrity to the PCB and optional top-side heatsink contact. The top surface connects electrically and thermally to pins 1, 5, 6, and 10 (all drain terminals).

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (D)	Common high-current output node; top-surface connection enables dual-side thermal extraction
2, 3, 4, 7, 8, 9	Source (S)	Low-side return path; six parallel source terminals minimize package inductance and resistive loss
11	Gate (G)	Control input; isolated gate terminal with R_g = 0.2–2.4 Ω (typ./max) for predictable turn-on/turn-off timing

Key Features

Feature	Design Value
Ultra-low R_thJC(Drain)	4 °C/W typical enables >25 W dissipation with minimal ΔT to heatsink-critical for space-constrained VRM modules
Low Q_gd/Q_gs ratio	Reduces Miller-induced gate oscillation and shoot-through risk during high-dV/dt transitions in synchronous buck converters
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy tolerance up to 31 mJ per pulse
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and EU Directive 2002/95/EC for environmentally regulated industrial and server deployments

Applications

VRM / POL Power Stages	High-Side Switching
Use Scenario: Point-of-load regulation in CPU/GPU VRMs delivering 5–15 V at up to 100 A using multiphase buck topology. IC Role / Device Role / Timing Role: High-side power switch handling high dI/dt and repetitive avalanche stress during PWM switching. Use Value: 0.0056 Ω R_DS(on) and 4 °C/W R_thJC reduce conduction loss and thermal bottleneck, enabling higher current density without forced air.	Use Scenario: Main power switch in 24-V industrial control systems requiring fast turn-on and low on-resistance. IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven via charge pump or bootstrap gate driver. Use Value: 11.9 nC Q_g at 4.5 V ensures rapid switching with low gate drive power, while 30-V rating provides margin above nominal bus voltage.
Server DC/DC Converters	Compact DC-DC Modules
Use Scenario: Intermediate bus conversion (48 V → 12 V) in hyperscale data center power supplies. IC Role / Device Role / Timing Role: Primary switch in high-frequency synchronous buck converters operating at 300–600 kHz. Use Value: Low C_iss (1510 pF) and Cr_ss (130 pF) minimize switching losses and EMI generation at elevated frequencies.	Use Scenario: Embedded power module for FPGA or ASIC core supply where board area and thermal footprint are constrained. IC Role / Device Role / Timing Role: Integrated high-side switch with top-side thermal interface for stacked PCB or metal-core substrate mounting. Use Value: PolarPAK®'s same-layout scalability and double-sided cooling allow consistent thermal design across multiple current ratings without layout revision.

VRM / POL Power Stages

High-Side Switching

Use Scenario: Point-of-load regulation in CPU/GPU VRMs delivering 5–15 V at up to 100 A using multiphase buck topology.

IC Role / Device Role / Timing Role: High-side power switch handling high dI/dt and repetitive avalanche stress during PWM switching.

Use Value: 0.0056 Ω R_DS(on) and 4 °C/W R_thJC reduce conduction loss and thermal bottleneck, enabling higher current density without forced air.

Use Scenario: Main power switch in 24-V industrial control systems requiring fast turn-on and low on-resistance.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven via charge pump or bootstrap gate driver.

Use Value: 11.9 nC Q_g at 4.5 V ensures rapid switching with low gate drive power, while 30-V rating provides margin above nominal bus voltage.

Server DC/DC Converters

Compact DC-DC Modules

Use Scenario: Intermediate bus conversion (48 V → 12 V) in hyperscale data center power supplies.

IC Role / Device Role / Timing Role: Primary switch in high-frequency synchronous buck converters operating at 300–600 kHz.

Use Value: Low C_iss (1510 pF) and Cr_ss (130 pF) minimize switching losses and EMI generation at elevated frequencies.

Use Scenario: Embedded power module for FPGA or ASIC core supply where board area and thermal footprint are constrained.

IC Role / Device Role / Timing Role: Integrated high-side switch with top-side thermal interface for stacked PCB or metal-core substrate mounting.

Use Value: PolarPAK®'s same-layout scalability and double-sided cooling allow consistent thermal design across multiple current ratings without layout revision.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 0.0042 Ω @ 10 V, but larger PQFN 5x6 mm package and higher Q_g (29 nC)	Better conduction loss but slower switching; suited for lower-frequency, higher-current POL	Select when minimizing I²R loss dominates over gate drive loss and layout space permits larger footprint
IRFH8326TRPBF	R_DS(on) = 0.0058 Ω @ 10 V, 12.5 nC Q_g @ 4.5 V, same 3.3×3.3 mm PolarPAK® footprint	Near-identical thermal and electrical specs; different gate threshold (1.2–2.2 V vs. 1–2 V)	Drop-in alternative if tighter V_GS(th) distribution or alternate qualification history is required

Compared with SiR872DP-T1-GE3 and IRFH8326TRPBF, the SIE864DF-T1-GE3 offers the best balance of low Q_g, ultra-low R_thJC, and compact 3.3×3.3 mm PolarPAK® form factor-making it optimal for high-frequency, thermally dense VRM and server DC/DC designs where gate drive efficiency and top-side cooling are prioritized.

Availability

SIE864DF-T1-GE3 is available at Aetrix Electronics and suitable for VRM, high-side switching, and server DC/DC converter applications requiring stable component supply, halogen-free compliance, and repeatable thermal performance across production volumes.

Supply support for SIE864DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIE864DF-T1-GE3 belongs to Vishay's TrenchFET® Gen III PolarPAK® family-designed specifically for high-current, high-efficiency DC/DC conversion in servers, telecom infrastructure, and industrial power systems where thermal management and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for the SIE864DF-T1-GE3?

The SIE864DF-T1-GE3 is rated for 45 A continuous drain current at case temperature T_C = 25 °C, limited by package thermal capacity-not silicon capability. At T_C = 70 °C, the rating drops to 41 A, and ambient-limited operation yields 23 A at T_A = 25 °C on a 1" × 1" FR4 board. Derating curves are provided in the official Vishay datasheet document 65578.

Does the SIE864DF-T1-GE3 support double-sided cooling, and how is thermal path implemented?

Yes-the SIE864DF-T1-GE3 uses Vishay's PolarPAK® package with a top-exposed drain connected to pins 1, 5, 6, and 10. This enables direct thermal interface to a heatsink or cold plate on the PCB top side, achieving R_thJC(Drain) = 4 °C/W (typ.), complementing bottom-side PCB copper thermal spreading for true double-sided cooling.

What is the gate threshold voltage range for the SIE864DF-T1-GE3, and how does it affect 3.3-V gate drive?

The SIE864DF-T1-GE3 has a guaranteed V_GS(th) range of 1.0 V to 2.0 V at T_J = 25 °C. With R_DS(on) = 0.0073 Ω at V_GS = 4.5 V, it is fully enhanced under standard 3.3-V logic-level drive-enabling direct interface with microcontroller GPIO or dedicated gate drivers without level-shifting.

Is the SIE864DF-T1-GE3 suitable for synchronous rectification, and what body diode parameters matter most?

Yes-the SIE864DF-T1-GE3 features a well-characterized intrinsic body diode with V_SD = 0.8–1.2 V at 10 A and t_rr = 30–45 ns. These values directly impact reverse recovery loss and dead-time optimization in synchronous buck topologies; low Q_rr (24–36 nC) further reduces switching loss during freewheeling transitions.

How does the SIE864DF-T1-GE3 differ from earlier PolarPAK® generations like the SiE820DF?

The SIE864DF-T1-GE3 implements TrenchFET® Gen III silicon, offering lower R_DS(on) (0.0056 Ω vs. ~0.0075 Ω for SiE820DF at 10 V), reduced Q_g, and improved Q_gd/Q_gs ratio versus Gen II. It retains identical PolarPAK® 3.3×3.3 mm mechanical footprint and pinout-ensuring layout compatibility while delivering measurable efficiency gains in high-frequency POL applications.

SIE864DF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (U)

Packaging:: Cut Tape (CT)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1510 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (U)

SIE864DF-T1-GE3 FAQ

1.How can I place an order for SIE864DF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE864DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE864DF-T1-GE3 reliable?

The price and inventory of SIE864DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE864DF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIE864DF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE864DF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE864DF-T1-GE3?

SIE864DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE864DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE864DF-T1-GE3?

For technical support, including SIE864DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE864DF-T1-GE3 requirements.

6.How does Aetrix verify that SIE864DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIE864DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE864DF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIE864DF-T1-GE3?

All SIE864DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE864DF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE864DF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIE864DF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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