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Vishay Siliconix SIE868DF-T1-GE3
- Part No.:
- SIE868DF-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 10-PolarPAK® (L)
- Datasheet:
-
SIE868DF-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A 10POLARPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,321
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Product details
Overview
SIE868DF-T1-GE3 from Vishay Siliconix is an N-channel 40-V TrenchFET® Gen III Power MOSFET in a PolarPAK® package, delivering RDS(on) = 0.0023 Ω at VGS = 10 V, 169-A silicon-limited continuous drain current, and 45-nC total gate charge. It serves as a primary-side switch or half-bridge power switch in high-efficiency DC-DC converters and motor drives.
For engineers reviewing the SIE868DF-T1-GE3 datasheet, SIE868DF-T1-GE3 pinout, SIE868DF-T1-GE3 application, or SIE868DF-T1-GE3 equivalent, key selection criteria include its ultra-low thermal resistance (RthJC = 0.8 °C/W), double-sided cooling capability, low Qgd/Qgs ratio for shoot-through prevention, and 100 % Rg and UIS testing.
Technical Context
This MOSFET uses trench-based silicon architecture optimized for high-current, low-voltage switching with enhanced thermal performance via top-exposed drain terminals. Its PolarPAK® Option L package integrates die-attach and leadframe design to enable simultaneous top- and bottom-side heat dissipation without exposed die.
The device features tightly controlled gate threshold voltage (VGS(th) = 1.0–2.2 V), low gate charge (Qg = 45–65 nC at 4.5 V), and robust body diode characteristics (trr = 50–75 ns, Qrr = 75–115 nC), supporting synchronous rectification and hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for primary-side switching in ≤40-V bus systems |
| RDS(on) | 0.0023 Ω @ VGS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-efficiency power stages |
| ID (Silicon Limit) | 169 A - Supports high-pulse current demands in motor drive and UPS applications |
| Qg | 45 nC @ VGS = 4.5 V - Reduces gate driver power and switching losses in 5-V control systems |
| RthJC (Drain) | 0.8 °C/W - Allows direct heatsink attachment to top surface, cutting junction-to-ambient thermal path by >75 % vs. standard SO-8 |
| trr | 50 ns - Minimizes reverse recovery energy loss during commutation in half-bridge configurations |
| VGS(th) | 1.6 V (Typ.) - Ensures reliable turn-on with standard logic-level gate drivers |
Pinout & Package
PolarPAK® Option L is a 10-terminal, leadless, double-sided cooling package with top-exposed drain pads (pins 1, 5, 6, 10) and source/gate connections on the bottom side. Package dimensions: 6.15 mm × 5.16 mm × 0.80 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 6, 10 | Drain (D) | Top-surface copper pads - electrically and thermally connected to drain, enabling direct heatsinking |
| 2, 3, 4, 7, 8, 9 | Source (S) | Bottom-side terminals - form low-inductance source return path and thermal interface to PCB |
| 5 (center) | Gate (G) | Single bottom-side gate pad - isolated from drain/source, optimized for low gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III silicon | Delivers 23% lower RDS(on) vs. prior generation at same die area, improving power density |
| Top-exposed PolarPAK® package | Enables dual thermal paths: top to heatsink + bottom to PCB, reducing RthJA to 20 °C/W |
| Low Qgd/Qgs ratio | Minimizes Miller-induced gate oscillation and shoot-through risk in high-dV/dt half-bridge operation |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress |
| Halogen-free & RoHS-compliant | Fulfills IEC 61249-2-21 and EU Directive 2002/95/EC for environmentally regulated industrial deployments |
Applications
| Primary-Side Switch | Half-Bridge Motor Drive |
|---|---|
Use Scenario: High-frequency primary-side switch in 36-V input DC-DC buck converters for telecom power supplies. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor; operates at 300–500 kHz. Use Value: Ultra-low RDS(on) and Qg reduce conduction and switching losses, achieving >96 % efficiency at 50 A load. | Use Scenario: High-current upper/lower switch pair in 24-V BLDC motor controllers for industrial automation. IC Role / Device Role / Timing Role: Synchronous half-bridge power stage driving trapezoidal back-EMF waveforms; requires fast, low-loss switching. Use Value: Low trr and Qrr minimize body-diode conduction loss during dead-time, reducing MOSFET temperature rise by 12 °C. |
| UPS Inverter Stage | Server VRM High-Side Switch |
Use Scenario: 48-V battery-fed inverter stage converting DC to 230-V AC in line-interactive uninterruptible power supplies. IC Role / Device Role / Timing Role: High-side switch in full-bridge topology handling bidirectional power flow and surge currents up to 100 A. Use Value: 169-A silicon limit and 125-W PD rating support sustained overload conditions without derating. | Use Scenario: High-side switch in multiphase 12-V input to 0.8-V output VRMs for AI accelerators and high-end CPUs. IC Role / Device Role / Timing Role: Fast-switching power FET operating at 1 MHz with tight duty-cycle control and minimal voltage droop. Use Value: 0.0029 Ω RDS(on) @ 4.5 V enables direct logic-level drive from PWM controller, eliminating level-shifter complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF8721PbF | RDS(on) = 0.0032 Ω @ 10 V; TO-252 package; RthJA = 62 °C/W | No top-side cooling; higher thermal resistance limits peak current in compact layouts | Choose when board space allows larger footprint and thermal budget permits higher junction temperature |
| SUP85P03-07-E3 | P-channel, -30 V, RDS(on) = 0.007 Ω @ -10 V; SO-8 package | Inverts logic polarity; unsuitable for high-side synchronous rectification without charge pump | Select only for low-side switching where complementary P-channel topology is required |
Compared with IRF8721PbF and SUP85P03-07-E3, the SIE868DF-T1-GE3 provides superior thermal performance and lower conduction loss in high-current, space-constrained applications-especially where double-sided cooling and logic-level gate drive are mandatory.
Availability
SIE868DF-T1-GE3 is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, motor drives, and UPS inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SIE868DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIE868DF-T1-GE3 belongs to Vishay's TrenchFET® Gen III PolarPAK® family, engineered specifically for high-current, high-frequency power conversion where thermal density and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for the SIE868DF-T1-GE3?
The SIE868DF-T1-GE3 has a silicon-limited continuous drain current of 169 A at TJ = 150 °C and a package-limited rating of 60 A at TC = 25 °C. The actual usable current depends on PCB layout, heatsinking, and ambient conditions-designers must verify thermal performance using RthJC = 0.8 °C/W and RthJA = 20 °C/W (t ≤ 10 s) per the SIE868DF-T1-GE3 datasheet.
Does the SIE868DF-T1-GE3 support logic-level gate drive?
Yes, the SIE868DF-T1-GE3 supports logic-level gate drive with VGS(th) = 1.0–2.2 V and RDS(on) = 0.0029 Ω at VGS = 4.5 V. This enables direct interfacing with 3.3-V or 5-V microcontrollers and PWM controllers without external level shifters-critical for compact, low-component-count power stages using the SIE868DF-T1-GE3.
What is the thermal resistance from junction to case for the SIE868DF-T1-GE3?
The SIE868DF-T1-GE3 has a maximum junction-to-case (drain top) thermal resistance of 1.0 °C/W, with a typical value of 0.8 °C/W. This low RthJC is achieved via the top-exposed drain pads in the PolarPAK® package, allowing efficient heat transfer directly to an external heatsink-making the SIE868DF-T1-GE3 ideal for thermally demanding, high-power-density designs.
Is the SIE868DF-T1-GE3 halogen-free and RoHS-compliant?
Yes, the SIE868DF-T1-GE3 is both halogen-free per IEC 61249-2-21 and compliant with the RoHS Directive 2002/95/EC. The "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction, verified through material declarations and manufacturing process controls-ensuring suitability for environmentally regulated industrial and automotive applications using the SIE868DF-T1-GE3.
Can the SIE868DF-T1-GE3 be used in synchronous rectification topologies?
Yes, the SIE868DF-T1-GE3 is well-suited for synchronous rectification due to its low RDS(on), fast body diode (trr = 50–75 ns, Qrr = 75–115 nC), and low Qgd/Qgs ratio. These characteristics reduce reverse recovery loss and improve light-load efficiency in LLC resonant and phase-shifted full-bridge converters-key advantages confirmed in application notes for the SIE868DF-T1-GE3.
SIE868DF-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 10-PolarPAK® (L)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 145 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6100 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-PolarPAK® (L)
SIE868DF-T1-GE3 FAQ
1.How can I place an order for SIE868DF-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIE868DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIE868DF-T1-GE3 reliable?
The price and inventory of SIE868DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE868DF-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIE868DF-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE868DF-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIE868DF-T1-GE3?
SIE868DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIE868DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIE868DF-T1-GE3?
For technical support, including SIE868DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE868DF-T1-GE3 requirements.
6.How does Aetrix verify that SIE868DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIE868DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE868DF-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIE868DF-T1-GE3?
All SIE868DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE868DF-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIE868DF-T1-GE3 part is unused and in its original packaging.
Return procedure for SIE868DF-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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