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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE874DF-T1-GE3

Name: SIE874DF-T1-GE3
Brand: Vishay Siliconix
SKU: SIE874DF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE874DF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (L)

Datasheet:: SIE874DF-T1-GE3.pdf

Description:: MOSFET N-CH 20V 60A 10POLARPAK

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Product details

Overview

SIE874DF-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Gen III Power MOSFET in a PolarPAK® package, delivering R_DS(on) = 1.17 mΩ at V_GS = 10 V and 1.6 mΩ at V_GS = 4.5 V, with 258 A silicon-limited continuous drain current and ultra-low thermal resistance for high-efficiency POL and OR-ing applications.

For engineers reviewing the SIE874DF-T1-GE3 datasheet, SIE874DF-T1-GE3 pinout, SIE874DF-T1-GE3 application, or SIE874DF-T1-GE3 equivalent, key selection criteria include its double-sided cooling capability, low Q_gd/Q_gs ratio to prevent shoot-through, 100 % R_g and UIS testing, and compliance with RoHS and halogen-free standards per IEC 61249-2-21.

Technical Context

This MOSFET uses Vishay's TrenchFET® Gen III silicon process optimized for low R_DS(on) and fast switching, with a top-exposed PolarPAK® package enabling thermal conduction through both top (drain) and bottom (source/ground) surfaces. Its gate threshold voltage of 1.0–2.2 V ensures stable turn-on under wide supply conditions.

The device features a low reverse transfer capacitance (C_rss = 760 pF) and total gate charge of 45–65 nC at 4.5 V drive, supporting high-frequency DC/DC operation. Body diode recovery time (t_rr = 60–90 ns) and Q_rr = 75–115 nC are characterized for synchronous rectification and OR-ing control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage for 20-V input rail systems
R_DS(on)	1.17 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 20 A in high-current POL stages
I_D (Cont.)	60 A package limit - Thermal design must respect 60-A steady-state current ceiling on FR4
Q_g	45 nC @ V_GS = 4.5 V - Determines gate driver power requirement for 500-kHz+ switching
R_thJC (Drain)	0.8 °C/W typical - Supports double-sided cooling with heatsink contact to top drain surface
t_rr	60 ns - Enables efficient synchronous rectification in buck converters without excessive body diode loss
V_GS(th)	1.0–2.2 V - Ensures reliable enhancement-mode turn-on with standard 3.3-V or 5-V gate drivers

Pinout & Package

PolarPAK® is a leadless, top-exposed, thermally enhanced package with die encapsulated and no exposed silicon. Top surface is electrically connected to pins 1, 5, 6, and 10 (all drain terminals); bottom-side source and gate connections enable compact double-sided PCB thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (D)	Top-exposed copper pad tied to internal drain - primary thermal path and high-current output node
2, 3, 4, 7, 8, 9	Source (S)	Bottom-side copper terminals - return path for load current and thermal conduction to PCB ground plane
11	Gate (G)	Single gate input terminal - requires low-inductance routing to minimize switching oscillation

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	1.6 mΩ enables high-efficiency operation with 3.3-V gate drive in point-of-load converters
Top-exposed PolarPAK® package	Enables simultaneous top-side heatsinking and bottom-side PCB thermal spreading for <1.0 °C/W total θ_JA in optimized layouts
Low Q_gd/Q_gs ratio	Reduces Miller-induced shoot-through risk during hard-switching transitions in synchronous buck stages
100 % R_g and UIS tested	Ensures gate robustness and avalanche energy handling (E_AS = 80 mJ) in real-world transient conditions
Halogen-free & RoHS compliant	Fulfills IEC 61249-2-21 and Directive 2002/95/EC requirements for green electronics manufacturing

Applications

High-Current POL Converter	OR-ing FET for Redundant Power
Use Scenario: 12-V to 1-V, 200-A VRM supplying AI accelerator ASICs with tight voltage regulation and dynamic load steps. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with 4.5-V gate drive. Use Value: 1.6-mΩ R_DS(on) limits conduction loss to <640 mW at 200 A, while 60-ns t_rr minimizes body diode conduction during dead-time.	Use Scenario: Dual 12-V power supplies feeding a server backplane, requiring seamless switchover without reverse current or voltage drop. IC Role / Device Role / Timing Role: Low-V_DS forward-path switch controlled by ideal diode controller, conducting up to 60 A continuously. Use Value: 1.17-mΩ R_DS(on) yields <42 mV drop at 36 A, reducing heat generation and improving system efficiency over discrete diode solutions.
High-Density DC/DC Module	Hot-Swap Controller Interface FET
Use Scenario: 48-V to 12-V intermediate bus converter in telecom equipment, constrained by height and thermal envelope. IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge topology, driven by isolated gate driver. Use Value: 0.8 °C/W R_thJC(Drain) allows direct top-side heatsink mounting, enabling >97 % peak efficiency in 10-mm-height modules.	Use Scenario: Inrush limiting and fault isolation in 24-V industrial PLC I/O modules with hot-plug capability. IC Role / Device Role / Timing Role: Series pass element controlled by hot-swap controller to limit dI/dt and block fault currents. Use Value: 258-A silicon limit and 100-A pulsed rating support robust short-circuit withstand (t_SC ≤ 10 µs) without derating.

High-Current POL Converter

OR-ing FET for Redundant Power

Use Scenario: 12-V to 1-V, 200-A VRM supplying AI accelerator ASICs with tight voltage regulation and dynamic load steps.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with 4.5-V gate drive.

Use Value: 1.6-mΩ R_DS(on) limits conduction loss to <640 mW at 200 A, while 60-ns t_rr minimizes body diode conduction during dead-time.

Use Scenario: Dual 12-V power supplies feeding a server backplane, requiring seamless switchover without reverse current or voltage drop.

IC Role / Device Role / Timing Role: Low-V_DS forward-path switch controlled by ideal diode controller, conducting up to 60 A continuously.

Use Value: 1.17-mΩ R_DS(on) yields <42 mV drop at 36 A, reducing heat generation and improving system efficiency over discrete diode solutions.

High-Density DC/DC Module

Hot-Swap Controller Interface FET

Use Scenario: 48-V to 12-V intermediate bus converter in telecom equipment, constrained by height and thermal envelope.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge topology, driven by isolated gate driver.

Use Value: 0.8 °C/W R_thJC(Drain) allows direct top-side heatsink mounting, enabling >97 % peak efficiency in 10-mm-height modules.

Use Scenario: Inrush limiting and fault isolation in 24-V industrial PLC I/O modules with hot-plug capability.

IC Role / Device Role / Timing Role: Series pass element controlled by hot-swap controller to limit dI/dt and block fault currents.

Use Value: 258-A silicon limit and 100-A pulsed rating support robust short-circuit withstand (t_SC ≤ 10 µs) without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 1.45 mΩ @ 10 V; PQFN 5×6 mm package; higher C_iss (7200 pF)	Higher gate charge increases driver losses above 300 kHz; less suitable for ultra-high-frequency POL	Prefer SIE874DF-T1-GE3 when double-sided cooling or sub-500-kHz switching with minimal Q_g is required
SIS840DP-T1-GE3	R_DS(on) = 1.35 mΩ @ 10 V; same PolarPAK® package; lower I_D silicon limit (200 A)	Lower avalanche energy (E_AS = 50 mJ vs. 80 mJ) and reduced UIS margin for high-energy transients	Choose SIE874DF-T1-GE3 where full 258-A silicon capability and 80-mJ E_AS are needed for mission-critical redundancy

Compared with IRF6642TRPBF and SIS840DP-T1-GE3, the SIE874DF-T1-GE3 delivers superior thermal performance via top-exposed drain, lowest Q_g at 4.5 V, and highest avalanche ruggedness-making it optimal for high-reliability, high-current, high-frequency POL and OR-ing designs where thermal headroom and transient immunity are critical.

Availability

SIE874DF-T1-GE3 is available at Aetrix Electronics and suitable for high-current point-of-load converters, redundant OR-ing power paths, high-density DC/DC modules, and hot-swap interface circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIE874DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and thermal performance.

The SIE874DF-T1-GE3 belongs to Vishay's PolarPAK® TrenchFET® Gen III family, engineered specifically for high-current, high-efficiency power conversion in space-constrained and thermally demanding applications such as server VRMs and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for the SIE874DF-T1-GE3?

The SIE874DF-T1-GE3 has a silicon-limited continuous drain current of 258 A at T_J = 150 °C, but its package-limited rating is 60 A at T_C = 25 °C. This means thermal design must prioritize case temperature control-especially using the top-exposed drain for heatsinking-to sustain high current without exceeding the 60-A package limit. The SIE874DF-T1-GE3 datasheet specifies this dual rating clearly in Absolute Maximum Ratings.

Does the SIE874DF-T1-GE3 support 3.3-V gate drive?

Yes, the SIE874DF-T1-GE3 is fully specified down to V_GS = 4.5 V, with R_DS(on) = 1.6 mΩ and Q_g = 45 nC at that level. While its V_GS(th) range is 1.0–2.2 V, reliable enhancement-mode switching at 3.3 V requires verifying gate driver strength and layout parasitics-actual R_DS(on) will rise above 1.6 mΩ, and switching losses increase. The SIE874DF-T1-GE3 is not characterized for guaranteed performance below 4.5 V in production test.

How does the PolarPAK® package of the SIE874DF-T1-GE3 improve thermal performance?

The PolarPAK® package of the SIE874DF-T1-GE3 exposes the drain die attach surface on the top side, enabling direct thermal interface to a heatsink while maintaining bottom-side source connections to the PCB. This dual-path cooling achieves R_thJC(Drain) = 0.8 °C/W typical-nearly 3× better than standard SO-8 packages-and reduces junction-to-ambient resistance significantly when both sides are utilized. The SIE874DF-T1-GE3 leverages this for high-power density without forced air.

Is the SIE874DF-T1-GE3 suitable for synchronous rectification?

Yes, the SIE874DF-T1-GE3 is well-suited for synchronous rectification due to its low R_DS(on), fast body diode recovery (t_rr = 60–90 ns), and low Q_rr (75–115 nC). These parameters minimize reverse recovery losses and allow precise timing control in buck and LLC topologies. The SIE874DF-T1-GE3 body diode V_SD is 0.8–1.2 V at 10 A, ensuring low forward conduction loss during dead-time intervals.

What is the avalanche energy rating of the SIE874DF-T1-GE3 and how is it tested?

The SIE874DF-T1-GE3 has a single-pulse avalanche energy rating (E_AS) of 80 mJ, measured under L = 0.1 mH with I_AS = 40 A. It undergoes 100 % UIS (Unclamped Inductive Switching) testing per production lot, ensuring each device meets this ruggedness specification. This makes the SIE874DF-T1-GE3 appropriate for applications with inductive load switching or transient overvoltage events where energy absorption is critical.

SIE874DF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (L)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.17mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6200 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (L)

SIE874DF-T1-GE3 FAQ

1.How can I place an order for SIE874DF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE874DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE874DF-T1-GE3 reliable?

The price and inventory of SIE874DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE874DF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIE874DF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE874DF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE874DF-T1-GE3?

SIE874DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE874DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE874DF-T1-GE3?

For technical support, including SIE874DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE874DF-T1-GE3 requirements.

6.How does Aetrix verify that SIE874DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIE874DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE874DF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIE874DF-T1-GE3?

All SIE874DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE874DF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE874DF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIE874DF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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