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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIE882DF-T1-GE3

Name: SIE882DF-T1-GE3
Brand: Vishay Siliconix
SKU: SIE882DF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIE882DF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 10-PolarPAK® (L)

Datasheet:: SIE882DF-T1-GE3.pdf

Description:: MOSFET N-CH 25V 60A 10POLARPAK

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Product details

Overview

SIE882DF-T1-GE3 from Vishay Siliconix is an N-channel 25 V (D-S) TrenchFET® Gen III power MOSFET in PolarPAK® package, delivering R_DS(on) = 1.4 mΩ at V_GS = 10 V and 1.8 mΩ at V_GS = 4.5 V, with 46 nC total gate charge and 60 A package-limited continuous drain current - optimized for low-side DC/DC conversion in server VCORE and VRM applications.

For engineers reviewing the SIE882DF-T1-GE3 datasheet, SIE882DF-T1-GE3 pinout, SIE882DF-T1-GE3 application, or SIE882DF-T1-GE3 equivalent, this page provides verified thermal resistance values (R_thJC(drain) = 0.8 °C/W), body diode recovery metrics (t_rr = 55 ns), gate charge partitioning (Q_gd/Q_gs = 12/18 nC), and PolarPAK® top-exposed thermal interface details critical for double-sided cooling implementation.

Technical Context

This MOSFET employs trench-based silicon architecture with ultra-low Q_gd/Q_gs ratio (0.67) to suppress shoot-through in synchronous buck converters. Its die is fully encapsulated within a leadframe-based PolarPAK® package where pins 1/5/6/10 connect to the top-surface drain terminal, enabling direct thermal coupling to heatsinks on both PCB sides.

The device supports gate drive down to 4.5 V with guaranteed R_DS(on) ≤ 1.8 mΩ, features 100% R_g and UIS testing, and integrates a robust body diode with V_SD = 0.8–1.2 V at I_S = 10 A and Q_rr = 70–105 nC - all validated under TJ = 150 °C operation and 260 °C peak reflow conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V logic-level gate drive
R_DS(on) @ 10 V	1.4 mΩ - Enables <1 W conduction loss at 20 A, critical for high-efficiency server VRMs
R_DS(on) @ 4.5 V	1.8 mΩ - Ensures stable low-side switching performance with standard 5 V PWM controllers
Q_g @ 4.5 V	46 nC - Low gate charge reduces driver power loss and enables fast 25 ns fall time at R_g = 1 Ω
R_thJC (drain)	0.8 °C/W - Top-side thermal path allows >100 W power dissipation with minimal junction-to-heatsink ΔT
I_D (package)	60 A - Package-limited current rating defined by 1" × 1" FR4 board mounting per JEDEC JESD51-2
t_rr	55 ns - Fast body diode recovery minimizes cross-conduction losses during dead-time transitions

Pinout & Package

PolarPAK® package: 10-terminal leadless construction with top-exposed drain paddle (pins 1, 5, 6, 10 electrically connected), bottom-side source and gate terminals, and no exposed die - designed for double-sided cooling on thermally enhanced PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6, 10	Drain (top surface)	Electrically common drain connection to top-exposed copper paddle for direct heatsink attachment
2, 4, 7, 8, 9	Source	Bottom-side source terminals providing low-inductance return path and thermal conduction to PCB
3	Gate	Single gate input with R_g = 0.2–2.2 Ω - optimized for 4.5–10 V drive with minimal Miller feedback

Key Features

Feature	Design Value
TrenchFET® Gen III silicon	Enables 1.4 mΩ R_DS(on) at 10 V while maintaining 25 V V_DS rating and 150 °C TJ max
PolarPAK® top-exposed drain	0.8 °C/W junction-to-case (drain) thermal resistance supports >100 W power handling with external heatsink
Low Q_gd/Q_gs ratio	0.67 prevents shoot-through in high-frequency synchronous rectification (f_SW up to 1 MHz)
100% R_g and UIS tested	Guarantees gate robustness against transient overvoltage and avalanche energy survival (E_AS = 125 mJ)
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard 99912

Applications

Server VCORE Regulation	VRM Power Stage
Use Scenario: High-current, high-efficiency point-of-load regulation for Intel/AMD CPU cores requiring <100 μΩ output impedance. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 300–1000 kHz with 50 ns dead time. Use Value: 1.4 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 2.2 mΩ MOSFETs, directly improving VRM efficiency at 100 A load.	Use Scenario: Primary low-side switch in 12 V input VRM modules for AI accelerators and GPU power delivery. IC Role / Device Role / Timing Role: Power FET in interleaved 4-phase topology with gate drive from integrated PWM controller. Use Value: 46 nC Q_g at 4.5 V enables full turn-on within 25 ns using 1 Ω gate resistor, minimizing switching loss at 500 kHz.
DC/DC Converter Low Side	High-Density Power Supply
Use Scenario: Secondary-side switch in isolated DC/DC converters for telecom and industrial equipment. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in forward or LLC resonant topologies. Use Value: Body diode V_SD = 0.8–1.2 V and t_rr = 55 ns reduce reverse recovery loss by 60% versus 45 V Schottky alternatives.	Use Scenario: Compact 50 A power module for edge computing nodes with strict thermal envelope constraints. IC Role / Device Role / Timing Role: Dual-side cooled MOSFET mounted between PCB layers and external heatsink. Use Value: 0.8 °C/W R_thJC(drain) allows 125 W PD at TC = 25 °C - enabling 50% higher power density than QFN-packaged equivalents.

Server VCORE Regulation

VRM Power Stage

Use Scenario: High-current, high-efficiency point-of-load regulation for Intel/AMD CPU cores requiring <100 μΩ output impedance.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 300–1000 kHz with 50 ns dead time.

Use Value: 1.4 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 2.2 mΩ MOSFETs, directly improving VRM efficiency at 100 A load.

Use Scenario: Primary low-side switch in 12 V input VRM modules for AI accelerators and GPU power delivery.

IC Role / Device Role / Timing Role: Power FET in interleaved 4-phase topology with gate drive from integrated PWM controller.

Use Value: 46 nC Q_g at 4.5 V enables full turn-on within 25 ns using 1 Ω gate resistor, minimizing switching loss at 500 kHz.

DC/DC Converter Low Side

High-Density Power Supply

Use Scenario: Secondary-side switch in isolated DC/DC converters for telecom and industrial equipment.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in forward or LLC resonant topologies.

Use Value: Body diode V_SD = 0.8–1.2 V and t_rr = 55 ns reduce reverse recovery loss by 60% versus 45 V Schottky alternatives.

Use Scenario: Compact 50 A power module for edge computing nodes with strict thermal envelope constraints.

IC Role / Device Role / Timing Role: Dual-side cooled MOSFET mounted between PCB layers and external heatsink.

Use Value: 0.8 °C/W R_thJC(drain) allows 125 W PD at TC = 25 °C - enabling 50% higher power density than QFN-packaged equivalents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	30 V V_DS, 1.3 mΩ R_DS(on) @ 10 V, same PolarPAK® package and pinout	Higher voltage margin for 15–24 V input systems; identical thermal and layout compatibility	Select when system requires >25 V blocking capability without changing PCB footprint or thermal design
IRL8726PBF	30 V V_DS, 2.1 mΩ R_DS(on) @ 4.5 V, SO-8 package with 2.5× larger R_thJA	SO-8 footprint incompatible with PolarPAK®; 3× higher junction-to-ambient thermal resistance limits power handling	Use only for prototyping or low-power (<15 A) applications where double-sided cooling is unavailable

Compared with SiR872DP-T1-GE3, SIE882DF-T1-GE3 offers tighter 25 V rating and lower gate charge for faster switching in 12 V VRMs; versus IRL8726PBF, it delivers 40% lower R_DS(on) and 65% better thermal performance in the same board area - making it superior for high-density, high-efficiency server power stages.

Availability

SIE882DF-T1-GE3 is available at Aetrix Electronics and suitable for server VCORE regulation, VRM power stages, and high-density DC/DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIE882DF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.

The SIE882DF-T1-GE3 belongs to Vishay's TrenchFET® Gen III PolarPAK® family, engineered specifically for high-current, low-voltage synchronous rectification in next-generation server and AI accelerator power supplies.

FAQ

What is the maximum continuous drain current rating for SIE882DF-T1-GE3?

The SIE882DF-T1-GE3 has a package-limited continuous drain current of 60 A at T_C = 25 °C, defined by thermal constraints of the PolarPAK® package on a 1" × 1" FR4 board. Its silicon-limited current is 229 A, but practical operation is governed by the 60 A package rating under standard JEDEC test conditions. The SIE882DF-T1-GE3 must be used within this limit to ensure reliability and thermal stability.

Does SIE882DF-T1-GE3 support 5 V gate drive in low-side configurations?

Yes, the SIE882DF-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) guaranteed at ≤ 1.8 mΩ at V_GS = 4.5 V and I_D = 20 A. This makes it suitable for direct drive from 5 V PWM controllers in low-side synchronous buck stages without level-shifting circuitry. The SIE882DF-T1-GE3 maintains stable switching performance with t_f = 10–15 ns at V_GEN = 10 V and R_g = 1 Ω.

How does the PolarPAK® package of SIE882DF-T1-GE3 improve thermal performance?

The SIE882DF-T1-GE3 uses a top-exposed drain paddle in its PolarPAK® package, achieving R_thJC(drain) = 0.8 °C/W - significantly lower than standard QFN or SO-8 packages. This allows heat to be extracted from the top surface via direct heatsink contact while simultaneously conducting through bottom-side source pads to the PCB, enabling true double-sided cooling. The SIE882DF-T1-GE3 leverages this for >100 W power dissipation in compact VRM designs.

What is the body diode recovery performance of SIE882DF-T1-GE3?

The SIE882DF-T1-GE3 features a fast intrinsic body diode with reverse recovery time t_rr = 55–85 ns and reverse recovery charge Q_rr = 70–105 nC at I_F = 10 A and dI/dt = 100 A/μs. These values are measured at T_J = 25 °C and enable efficient synchronous rectification with minimal cross-conduction loss during dead-time intervals. The SIE882DF-T1-GE3 body diode is optimized for high-frequency DC/DC operation up to 1 MHz.

Is SIE882DF-T1-GE3 suitable for automotive applications?

No, the SIE882DF-T1-GE3 is not qualified for automotive use. It is rated for industrial temperature range (–55 °C to +150 °C) but lacks AEC-Q101 qualification, automotive-specific reliability testing, and PPAP documentation. Vishay explicitly states that their products are not designed for life-sustaining applications unless specifically qualified in writing. For automotive-grade alternatives, consult Vishay's AEC-Q101-certified TrenchFET® portfolio instead of the SIE882DF-T1-GE3.

SIE882DF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 10-PolarPAK® (L)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6400 pF @ 12.5 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PolarPAK® (L)

SIE882DF-T1-GE3 FAQ

1.How can I place an order for SIE882DF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIE882DF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIE882DF-T1-GE3 reliable?

The price and inventory of SIE882DF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE882DF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIE882DF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE882DF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIE882DF-T1-GE3?

SIE882DF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIE882DF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIE882DF-T1-GE3?

For technical support, including SIE882DF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE882DF-T1-GE3 requirements.

6.How does Aetrix verify that SIE882DF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIE882DF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE882DF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIE882DF-T1-GE3?

All SIE882DF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE882DF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIE882DF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIE882DF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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