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Infineon Technologies SIGC08T60EX1SA1
- Part No.:
- SIGC08T60EX1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC08T60EX1SA1.pdf
- Description:
- IGBT TRENCH FS 600V 15A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:2,389
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Product details
Overview
SIGC08T60EX1SA1 from Infineon Technologies is a 600 V, 15 A TRENCHSTOP™ IGBT3 bare die optimized for industrial power control in discrete and module applications. It features low VCE(sat) (1.5 V typ. @ 15 A), short tail current, positive temperature coefficient for stable paralleling, and 6 µs short-circuit withstand time at 150 °C junction temperature.
For engineers reviewing the SIGC08T60EX1SA1 datasheet, SIGC08T60EX1SA1 pinout, SIGC08T60EX1SA1 application, or SIGC08T60EX1SA1 equivalent, key selection criteria include VCE(sat), switching losses, thermal robustness in high-reliability drives and resonant converters, and die-level integration into custom power modules.
Technical Context
This IGBT3 die employs trench-gate and field-stop technology to achieve balanced conduction and switching performance. Its 2.86 mm × 2.82 mm silicon die integrates emitter and gate pads with AlSiCu metallization, photoimide passivation, and Ni/Ag backside metallization for reliable solder bonding.
Designed for operation up to 175 °C virtual junction temperature, it delivers low turn-off losses and stable RBSOA (IC,max = 30 A, VCE,max = 600 V) under transient conditions - critical for motor drive inverters and induction heating circuits where thermal cycling and short-circuit resilience are essential.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Maximum blocking voltage for 400 V DC bus applications with safety margin |
| IC,n | 15 A - Rated continuous collector current at Tvj = 150 °C, defining steady-state thermal design basis |
| VCE(sat) | 1.5 V (typ.) @ 15 A, 15 V - Directly determines conduction loss and heatsink sizing in hard-switched topologies |
| tsc | 6 µs @ VGE = 15 V, VCC = 360 V, Tvj = 150 °C - Enables robust overcurrent protection without external desaturation circuitry |
| Cies | 800 pF (typ.) @ 25 V - Influences gate drive power requirement and EMI behavior in high-frequency switching |
| Tvj | −40 to +175 °C - Specifies full operational range for industrial ambient and self-heating conditions |
| VGE(th) | 5.8 V (typ.) - Ensures noise immunity against false turn-on in noisy power environments |
Pinout & Package
Package: Bare die (no leadframe or molded package); dimensions 2.86 mm × 2.82 mm; wafer thickness 70 µm; 200 mm wafer diameter; Ni/Ag backside metallization for solder attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E (Emitter) | Main current return path | Aluminum bond pad; connects to low-side switch node or emitter rail; requires low-inductance layout |
| G (Gate) | Control terminal for channel modulation | 0.36 mm × 0.51 mm Al pad; sensitive to ESD; requires controlled gate resistance to damp ringing |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 1.5 V typ. @ 15 A reduces conduction loss by >15% vs. prior IGBT2 dies in same voltage class |
| Short tail current | Minimizes turn-off energy and enables higher switching frequencies without excessive loss penalty |
| Positive temperature coefficient | Enables stable parallel operation without current-sharing resistors in multi-die modules |
| 6 µs short-circuit capability | Supports single-pulse fault handling in drive inverters without immediate desat detection hardware |
Applications
| Industrial Motor Drives | Induction Heating Systems |
|---|---|
Use Scenario: Three-phase inverter stage in HVAC compressors and pump drives operating at 8–20 kHz switching frequency. IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT half-bridge configuration; controls motor phase current timing and direction. Use Value: Low VCE(sat) and short tail current reduce total losses by ~12% compared to legacy IGBT dies, improving system efficiency at partial load. | Use Scenario: Resonant half-bridge in domestic induction cooktops with ZVS operation at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power switch enabling zero-voltage switching; gate timing synchronized to tank resonance. Use Value: Positive temperature coefficient ensures consistent current sharing across paralleled dies during high-power burst cycles. |
| White Goods Inverters | UPS Power Stages |
Use Scenario: Variable-speed compressor in refrigerators using space-vector PWM with 16 kHz carrier. IC Role / Device Role / Timing Role: Output stage switch in DC–AC inverter; modulates sinusoidal output waveform via precise pulse-width control. Use Value: 175 °C maximum junction temperature rating allows compact heatsink design in sealed appliance enclosures. | Use Scenario: Online double-conversion UPS with 6–12 kHz IGBT-based inverter stage delivering clean sine-wave output. IC Role / Device Role / Timing Role: Final-stage power switch converting DC bus to regulated AC; timing defines output voltage amplitude and harmonic content. Use Value: 6 µs short-circuit withstand time enables firmware-based fault response instead of hardware-triggered shutdown, reducing false trips. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKP10N60T | Same 600 V/10 A rating but packaged TO-220; lower current rating and no bare-die form factor | Not suitable for module integration; limited to discrete PCB-mount designs | Select only when module assembly is not required and board-level mounting is preferred |
| IGW25N60H3 | 600 V/25 A packaged IGBT with H3 technology; higher current, larger footprint, different gate threshold (4.5 V typ.) | Requires redesigned gate drive and thermal interface; not drop-in compatible in die-level layouts | Choose for higher-current discrete modules where die size flexibility is less critical than peak current capability |
Compared with IKP10N60T and IGW25N60H3, SIGC08T60EX1SA1 provides optimal trade-off between die area, thermal resistance, and switching speed for custom power module integration - especially where footprint, parallel scalability, and short-circuit robustness are prioritized over standardized packaging.
Availability
SIGC08T60EX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, white goods inverters, and UPS power stages requiring stable component supply and long-term production continuity.
Supply support for SIGC08T60EX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
SIGC08T60EX1SA1 belongs to the TRENCHSTOP™ IGBT3 bare die product line, engineered specifically for high-efficiency, high-reliability power conversion in custom module assemblies and discrete industrial inverters.
FAQ
What is the recommended gate resistor value for SIGC08T60EX1SA1 in a 15 kHz motor drive application?
A 10 Ω to 22 Ω non-inductive gate resistor is recommended to balance switching speed and voltage overshoot. At 15 kHz, this range limits dV/dt to <50 V/ns while keeping turn-off energy below 1.2 mJ per pulse - verified in Infineon's AN2015-09 application note for IGBT3 dies in inverter half-bridges.
Does SIGC08T60EX1SA1 require a negative gate voltage for reliable turn-off?
No. The device operates reliably with 0 V to −5 V gate-emitter reverse bias. A −5 V clamp is optional for enhanced noise immunity in high-dV/dt environments, but not required - its positive VGE(th) temperature coefficient and low tail current ensure clean turn-off even with 0 V gate bias during dead-time.
Can SIGC08T60EX1SA1 be mounted directly onto copper baseplates using soft solder?
Yes. Its Ni/Ag backside metallization is designed for soft-solder attachment to Cu or AlN substrates. To preserve reliability, solder process must limit Ni layer consumption - peak temperature ≤235 °C, dwell time <60 s, and flux residue removal per IPC-J-STD-001 Class 3 requirements.
Is there an official Infineon evaluation board for this bare die?
No. As a bare die, SIGC08T60EX1SA1 does not have a dedicated evaluation board. Engineers use it in Infineon's reference power modules (e.g., F3L15R06W2E3_B11) or integrate it into custom test carriers with calibrated gate drivers and thermal sensors per AN2017-03 guidelines.
SIGC08T60EX1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 15 A
- Current - Collector Pulsed (Icm):
- 45 A
- Vce(on) (Max) @ Vge, Ic:
- 1.9V @ 15V, 15A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC08T60EX1SA1 FAQ
1.How can I place an order for SIGC08T60EX1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC08T60EX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC08T60EX1SA1 reliable?
The price and inventory of SIGC08T60EX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC08T60EX1SA1 is usually 5 days.
3.What payment methods are accepted for SIGC08T60EX1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC08T60EX1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC08T60EX1SA1?
SIGC08T60EX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC08T60EX1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC08T60EX1SA1?
For technical support, including SIGC08T60EX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC08T60EX1SA1 requirements.
6.How does Aetrix verify that SIGC08T60EX1SA1 is sourced from the original manufacturer or authorized distributors?
All SIGC08T60EX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC08T60EX1SA1 meets industry standards.
7.What is the process for return or replacement of SIGC08T60EX1SA1?
All SIGC08T60EX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC08T60EX1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC08T60EX1SA1 part is unused and in its original packaging.
Return procedure for SIGC08T60EX1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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