Vishay Siliconix SIHA100N60E-GE3

Overview

SIHA100N60E-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.086 Ω (typ. at V_GS = 10 V), Q_g = 33 nC (typ.), and avalanche-rated (E_AS = 226 mJ). It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHA100N60E-GE3 datasheet, SIHA100N60E-GE3 pinout, SIHA100N60E-GE3 application, or SIHA100N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, 0.086 Ω R_DS(on), 33 nC gate charge, 226 mJ UIS rating, and TO-220 FULLPAK thermal performance (R_thJC = 3.6 °C/W).

Technical Context

This MOSFET employs Vishay's 4th-generation E series technology optimized for hard-switched and resonant topologies. Its low figure-of-merit (R_DS(on) × Q_g) and reduced C_oss(er) (64 pF) minimize switching loss and improve efficiency in continuous conduction mode (CCM) PFC and LLC converters.

The device integrates an avalanche-rated body diode with t_rr = 358 ns (typ.) and Q_rr = 5.1 μC (typ.), supporting robust operation in synchronous rectification and bidirectional energy transfer applications where diode recovery behavior critically impacts EMI and voltage overshoot.

Key Specifications

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead (Pb)-free and halogen-free), with drain-connected tab for direct heatsinking and improved thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STW62N60M2 and IXFH30N60X, SIHA100N60E-GE3 delivers the lowest R_DS(on) × Q_g product (2.83 Ω·nC) in TO-220 FULLPAK, making it optimal for space-constrained, high-frequency PFC and SMPS where both switching and conduction losses must be minimized.

Availability

SIHA100N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHA100N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The E Series Power MOSFET product line targets high-efficiency AC/DC and DC/DC conversion in computing, telecom, and renewable energy systems, emphasizing low FOM, avalanche robustness, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHA100N60E-GE3 at 100 °C case temperature?

The SIHA100N60E-GE3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 12 A rating at 25 °C, based on a linear derating factor of 0.28 W/°C and R_thJC = 3.6 °C/W. Designers must verify junction temperature using actual PCB layout and heatsink conditions before finalizing thermal design for the SIHA100N60E-GE3.

Does SIHA100N60E-GE3 support logic-level gate drive?

No, SIHA100N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and R_DS(on) is specified at V_GS = 10 V. It requires a 10 V gate drive for full enhancement and minimum on-resistance. Using 5 V logic-level drive results in significantly higher R_DS(on) and unacceptable conduction loss-confirm all gate drive circuitry delivers ≥10 V to ensure proper operation of the SIHA100N60E-GE3.

What is the significance of the "-GE3" suffix in SIHA100N60E-GE3?

Per Vishay's ordering nomenclature, the "-GE3" suffix indicates lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU and Vishay's green policy. The "E3" denotes the specific environmental compliance level and packaging variant-this part uses matte tin (Sn) plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life. Always refer to the official Vishay document 92199 for SIHA100N60E-GE3 packaging and handling details.

Can SIHA100N60E-GE3 replace older Vishay 600 V MOSFETs like SIHP12N60E in existing designs?

SIHA100N60E-GE3 offers lower R_DS(on) (0.086 Ω vs. 0.12 Ω) and lower Q_g (33 nC vs. 42 nC) than SIHP12N60E, but it is not a drop-in replacement due to differences in pinout orientation and thermal pad configuration in the Thin-Lead TO-220 FULLPAK package. Layout verification-including gate drive loop inductance and drain-source parasitic capacitance-is required before substituting SIHA100N60E-GE3 into legacy designs originally using SIHP12N60E.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHA100N60E-GE3?

The typical reverse recovery charge (Q_rr) of the integral body diode in SIHA100N60E-GE3 is 5.1 μC, measured at T_J = 25 °C, I_F = I_S = 13 A, di/dt = 100 A/μs, and V_R = 25 V. This parameter directly impacts switching loss and voltage overshoot in half-bridge and synchronous rectifier topologies. For designs operating above 100 °C junction temperature, Q_rr increases-consult Figure 6 in the SIHA100N60E-GE3 datasheet for temperature-dependent Q_rr curves.