Vishay Siliconix SIHA105N60EF-GE3

Overview

SIHA105N60EF-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.088 Ω R_DS(on) at V_GS = 10 V, 53 nC total gate charge, and fast body diode with 125 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA105N60EF-GE3 datasheet, SIHA105N60EF-GE3 pinout, SIHA105N60EF-GE3 application, or SIHA105N60EF-GE3 equivalent, key selection criteria include avalanche-rated UIS capability (226 mJ), 70 V/ns dv/dt immunity, and Co(er) of 63 pF for optimized hard-switching performance in continuous conduction mode topologies.

Technical Context

This EF-series MOSFET employs 4th-generation E-series silicon technology to achieve low figure-of-merit (R_DS(on) × Q_g = 4.66 Ω·nC) and reduced effective output capacitance (Co(er) = 63 pF). Its fast intrinsic body diode supports ZVS-capable resonant converters and reduces snubber losses in bridge-leg configurations.

The device is rated for repetitive unclamped inductive switching (UIS) up to 226 mJ and exhibits stable threshold voltage (3–5 V) and low gate leakage (<1 μA at ±30 V), enabling robust gate drive design across industrial temperature range (−55 °C to +150 °C).

Key Specifications

Pinout & Package

SIHA105N60EF-GE3 uses a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant with shortened leads and insulated backside), offering improved thermal resistance vs. standard TO-220 and compatibility with automated through-hole assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW62N60M2 and IXFH32N60P, SIHA105N60EF-GE3 provides optimal balance of low R_DS(on), fast diode recovery, and robust UIS rating in a compact TO-220 FULLPAK footprint-making it preferred for space-constrained, high-reliability 600 V power stages.

Availability

SIHA105N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHA105N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.

The EF Series power MOSFETs, including SIHA105N60EF-GE3, were engineered for high-efficiency, high-reliability switch-mode power conversion in server, telecom, and renewable energy systems demanding low FOM and fast body diode performance.

FAQ

What is the maximum continuous drain current for SIHA105N60EF-GE3 at 100 °C case temperature?

The SIHA105N60EF-GE3 supports 8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures junction temperature remains within the −55 °C to +150 °C operating range under sustained load conditions. Engineers must verify heatsink design using R_thJC = 3.6 °C/W to maintain reliability.

Does SIHA105N60EF-GE3 have a fully rated avalanche capability, and what is its E_AS value?

Yes, SIHA105N60EF-GE3 is fully rated for repetitive unclamped inductive switching with E_AS = 226 mJ (tested per JEDEC JESD24-11). This specification is measured at V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4 A. The robust avalanche rating makes SIHA105N60EF-GE3 suitable for motor drive freewheeling and welding inverter applications where inductive energy dissipation is routine.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA105N60EF-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the integral body diode in SIHA105N60EF-GE3 is 125 ns, measured at T_J = 25 °C, I_F = I_S = 13 A, di/dt = 100 A/μs, and V_R = 400 V. This fast recovery characteristic directly reduces switching loss and EMI in bridge-leg configurations, distinguishing SIHA105N60EF-GE3 from standard MOSFETs with slower diodes.

Is SIHA105N60EF-GE3 compatible with lead-free reflow soldering, and what is its peak temperature rating?

Yes, SIHA105N60EF-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free soldering per J-STD-020. Its peak reflow temperature rating is 260 °C for 10 seconds, as confirmed in the Soldering Recommendations section. The Thin-Lead TO-220 FULLPAK package maintains mechanical integrity and die attach reliability under this thermal profile, supporting high-yield automated assembly.

What gate-source voltage range is supported by SIHA105N60EF-GE3, and how does V_GS(th) affect drive design?

SIHA105N60EF-GE3 supports V_GS from −30 V to +30 V, with gate threshold voltage V_GS(th) specified from 3 V to 5 V (V_DS = V_GS, I_D = 250 μA). This range enables reliable enhancement-mode operation with standard 10 V gate drivers while allowing margin against spurious turn-on. Designers must ensure gate drive stays within ±30 V to prevent irreversible gate oxide damage, especially during fast dv/dt events.