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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA11N80E-GE3

Name: SIHA11N80E-GE3
Brand: Vishay Siliconix
SKU: SIHA11N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA11N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA11N80E-GE3.pdf

Description:: MOSFET N-CH 800V 12A TO220

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Product details

Overview

SIHA11N80E-GE3 from Vishay Siliconix is an 800 V, 12 A N-channel enhancement-mode Power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring 0.38 Ω R_DS(on) at V_GS = 10 V, 88 nC total gate charge, and 226 mJ single-pulse avalanche energy - designed for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHA11N80E-GE3 datasheet, SIHA11N80E-GE3 pinout, SIHA11N80E-GE3 application, or SIHA11N80E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 3.7 °C/W), body diode recovery characteristics (t_rr = 345 ns), and real-world design implications for hard-switched 480 V DC bus topologies.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage ruggedness and low gate charge. Its 800 V V_DS rating with 1.1 V/°C temperature coefficient enables stable operation across -55 to +150 °C junction range, while the integrated body diode supports synchronous rectification and unclamped inductive switching.

The MOSFET exhibits low C_iss (1670 pF) and ultra-low Q_gd/Q_g ratio (16/88 nC), reducing Miller-induced turn-off delay and improving controllability in high-dv/dt environments up to 70 V/ns at T_J = 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports 480 V DC bus designs with ≥1.67× voltage margin for transient clamping
R_DS(on) max	0.44 Ω at 25 °C - limits conduction loss to ≤2.6 W at 7.7 A RMS in continuous PFC operation
Q_g max	88 nC - determines gate driver peak current requirement of ≥98 mA for 0.9 μs 10–90% V_GS transition with 9.1 Ω R_g
E_AS	226 mJ - enables reliable operation under 4.0 A inductive fault currents without external snubbers
R_thJC	3.7 °C/W - allows 34 W dissipation with ≤125 °C case-to-ambient rise using standard heatsink mounting
t_rr	345 ns typical - constrains maximum switching frequency to ≤300 kHz in hard-switched converters to limit diode recovery loss
I_D continuous	12 A at T_C = 25 °C - defines safe operating area boundary for 1 ms pulses at full rated current

Pinout & Package

Thin-Lead TO-220 FULLPAK package with isolated drain tab (D), source (S), and gate (G) terminals; 3.7 °C/W junction-to-case thermal resistance measured at drain tab per JEDEC JESD51-14.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power terminal	Electrically connected to metal tab - must be mounted to heatsink with electrically isolating thermal pad if system ground reference differs
S (Source)	Power return and gate reference node	Low-inductance connection required to minimize V_GS noise during fast switching; ties to PCB ground plane beneath device
G (Gate)	Control input for channel modulation	High-impedance node requiring <100 nA leakage path; sensitive to ESD - requires series gate resistor (9.1 Ω typical) and local decoupling

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	33.4 Ω·nC - reduces combined switching + conduction loss in 100–300 kHz PFC stages by ≥18% vs. legacy 800 V MOSFETs
Avalanche-rated construction	226 mJ E_AS - eliminates need for external clamping circuits in welder output stages and motor drive freewheeling paths
Ultra-low Q_gd	16 nC - suppresses Miller plateau duration, enabling clean turn-off even with 70 V/ns dv/dt on drain node
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Material Declaration 99912 - suitable for industrial and telecom equipment with strict environmental compliance
Body diode with soft recovery	t_rr = 345 ns, Q_rr = 4.2 μC - minimizes voltage overshoot and EMI during reverse recovery in flyback and LLC resonant converters

Applications

Server Power Supply PFC Stage	Telecom 48 V Input Rectifier
Use Scenario: Boost PFC converter operating at 100 kHz with 380–400 V DC output from 200–240 V AC input. IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into boost inductor; handles 12 A peak current at 800 V blocking. Use Value: 0.38 Ω R_DS(on) and 88 nC Q_g reduce total losses by 1.9 W vs. comparable 800 V MOSFETs, improving efficiency from 95.2% to 95.7% at full load.	Use Scenario: Active OR-ing circuit in redundant 48 V DC distribution with hot-swap capability. IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch replacing ideal diodes; blocks reverse current during fault conditions. Use Value: 800 V V_DS rating provides 16.7× overvoltage margin against 48 V transients, while 226 mJ E_AS withstands inrush surges without failure.
Solar PV Inverter DC Link Switch	Industrial Induction Heater Half-Bridge
Use Scenario: DC link switching in string inverters handling 600–1000 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter bridge; commutates 10 A RMS at 16 kHz PWM frequency. Use Value: Low C_iss (1670 pF) and 70 V/ns dv/dt rating ensure stable gate drive integrity despite high common-mode noise in transformerless PV systems.	Use Scenario: Half-bridge topology driving 20–50 kHz resonant tank in medium-frequency induction heating systems. IC Role / Device Role / Timing Role: Fast-switching high-voltage switch managing 8 A peak current at 800 V blocking during zero-voltage switching transitions. Use Value: Soft-recovery body diode (t_rr = 345 ns) prevents destructive voltage spikes during ZVS dead-time, extending IGBT/MOSFET lifetime by >3× in 25 kW systems.

Server Power Supply PFC Stage

Telecom 48 V Input Rectifier

Use Scenario: Boost PFC converter operating at 100 kHz with 380–400 V DC output from 200–240 V AC input.

IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into boost inductor; handles 12 A peak current at 800 V blocking.

Use Value: 0.38 Ω R_DS(on) and 88 nC Q_g reduce total losses by 1.9 W vs. comparable 800 V MOSFETs, improving efficiency from 95.2% to 95.7% at full load.

Use Scenario: Active OR-ing circuit in redundant 48 V DC distribution with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch replacing ideal diodes; blocks reverse current during fault conditions.

Use Value: 800 V V_DS rating provides 16.7× overvoltage margin against 48 V transients, while 226 mJ E_AS withstands inrush surges without failure.

Solar PV Inverter DC Link Switch

Industrial Induction Heater Half-Bridge

Use Scenario: DC link switching in string inverters handling 600–1000 V DC input from photovoltaic arrays.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter bridge; commutates 10 A RMS at 16 kHz PWM frequency.

Use Value: Low C_iss (1670 pF) and 70 V/ns dv/dt rating ensure stable gate drive integrity despite high common-mode noise in transformerless PV systems.

Use Scenario: Half-bridge topology driving 20–50 kHz resonant tank in medium-frequency induction heating systems.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch managing 8 A peak current at 800 V blocking during zero-voltage switching transitions.

Use Value: Soft-recovery body diode (t_rr = 345 ns) prevents destructive voltage spikes during ZVS dead-time, extending IGBT/MOSFET lifetime by >3× in 25 kW systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, 48 A I_D, R_DS(on) = 0.065 Ω, Q_g = 105 nC - lower voltage rating but higher current capacity	Requires derating below 400 V DC bus; unsuitable for 800 V PFC or PV inverter DC links	Select only for 400 V-class SMPS where higher current and lower R_DS(on) outweigh voltage margin needs
IXFH30N80X	800 V V_DS, 30 A I_D, R_DS(on) = 0.24 Ω, Q_g = 145 nC - higher current, higher Q_g, same voltage class	Better for high-current motor drives; less efficient in high-frequency PFC due to 65% higher gate charge	Prefer for 20–30 A industrial motor control; avoid in space-constrained telecom PFC where SIHA11N80E-GE3's smaller footprint and lower Q_g reduce driver complexity

Compared with STW48N60M2 and IXFH30N80X, SIHA11N80E-GE3 offers optimal balance of 800 V robustness, 12 A capability, and 88 nC gate charge - making it uniquely suited for compact, high-efficiency 1–3 kW telecom and server PFC modules where thermal density and dv/dt immunity are critical.

Availability

SIHA11N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHA11N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The SIHA11N80E-GE3 belongs to Vishay's E Series Power MOSFET family - engineered specifically for high-voltage, high-efficiency switching in power factor correction and telecom offline power supplies.

FAQ

What is the maximum continuous drain current rating for SIHA11N80E-GE3 at 100 °C case temperature?

The SIHA11N80E-GE3 supports 8 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions.

Does SIHA11N80E-GE3 have avalanche capability, and how is it characterized?

Yes, SIHA11N80E-GE3 is fully avalanche-rated with a single-pulse avalanche energy (E_AS) of 226 mJ, tested under standardized conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.0 A. This rating confirms ruggedness against inductive switching faults without external protection components in applications like motor drives and welding inverters.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA11N80E-GE3, and why does it matter?

The SIHA11N80E-GE3 body diode has a typical reverse recovery time (t_rr) of 345 ns at T_J = 25 °C, I_F = 5.5 A, di/dt = 100 A/μs, and V_R = 25 V. This value directly impacts switching loss and EMI in hard-switched topologies - shorter t_rr reduces voltage overshoot and ringing, enabling cleaner waveforms and relaxed snubber design in PFC and DC-DC converters.

Can SIHA11N80E-GE3 be used in surface-mount designs?

No, SIHA11N80E-GE3 uses a through-hole Thin-Lead TO-220 FULLPAK package with a metal drain tab intended for screw-mount heatsinking. It lacks SMD-compatible leads or thermal pads. For surface-mount alternatives, consider Vishay's SQ series or competing D2PAK-7L packages - but note these differ in pinout, thermal path, and R_thJC, requiring PCB redesign.

What gate drive voltage is required to fully enhance SIHA11N80E-GE3, and what is its threshold range?

The SIHA11N80E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2–4 V at I_D = 250 μA, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) of 0.38 Ω. Operating below 10 V increases on-resistance nonlinearly - at V_GS = 8 V, R_DS(on) rises to ~0.55 Ω, increasing conduction loss by 45% at rated current.

SIHA11N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 440mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1670 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA11N80E-GE3 FAQ

1.How can I place an order for SIHA11N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA11N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA11N80E-GE3 reliable?

The price and inventory of SIHA11N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA11N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA11N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA11N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA11N80E-GE3?

SIHA11N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA11N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA11N80E-GE3?

For technical support, including SIHA11N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA11N80E-GE3 requirements.

6.How does Aetrix verify that SIHA11N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA11N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA11N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA11N80E-GE3?

All SIHA11N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA11N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA11N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHA11N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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