Vishay Siliconix SIHA120N60E-GE3

Overview

SIHA120N60E-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.104 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 88 mJ single-pulse avalanche energy - optimized for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHA120N60E-GE3 datasheet, SIHA120N60E-GE3 pinout, SIHA120N60E-GE3 application, or SIHA120N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), Co(er) of 56 pF, 70 V/ns dv/dt rating at T_J = 125 °C, and avalanche-rated ruggedness for hard-switched topologies.

Technical Context

This E-series MOSFET employs 4th-generation superjunction technology to minimize conduction and switching losses simultaneously. Its low effective output capacitance (Co(er) = 56 pF) and reduced Q_gd/Q_g ratio (12/45 nC) support fast, low-loss hard switching in continuous conduction mode (CCM) PFC and LLC resonant converters.

The device integrates a robust body diode with t_rr = 322 ns (typ.), Q_rr = 4.9 μC, and I_RRM = 29 A - enabling reliable operation in bidirectional and synchronous rectification roles without external diode supplementation in moderate-frequency SMPS designs.

Key Specifications

Pinout & Package

Thin-Lead TO-220 FULLPAK package: 3-pin, through-hole, isolated drain tab (D), with 13.6 mm height, 8.5 mm width, and 10.0 mm depth per Vishay Doc. 62649. Mounting torque: 0.6 N·m on M3 screw.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW62N60M2 and IXFH32N60P, SIHA120N60E-GE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220 FULLPAK form factor, enabling higher power density in space-constrained server and telecom modules without sacrificing ruggedness.

Availability

SIHA120N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHA120N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in server, telecom, and industrial power conversion - emphasizing low FOM, avalanche ruggedness, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHA120N60E-GE3 at 100 °C case temperature?

The SIHA120N60E-GE3 supports 16 A continuous drain current at T_C = 100 °C, derated linearly from 25 A at 25 °C using a 0.27 W/°C factor. This rating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation in convection-cooled telecom rectifier modules where case temperatures commonly reach 90–100 °C.

Does SIHA120N60E-GE3 have avalanche energy rating, and how is it specified?

Yes, SIHA120N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 88 mJ, tested per V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.5 A. This rating is validated across the full −55 °C to +150 °C junction temperature range and confirms ruggedness in flyback and forward converter primary switches where voltage spikes exceed V_DS.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode in SIHA120N60E-GE3?

The SIHA120N60E-GE3 body diode exhibits Q_rr = 4.9 μC (typ.) and 18.4 μC (max) at T_J = 25 °C, I_F = 12 A, di/dt = 100 A/μs, and V_R = 400 V. This low Q_rr value directly reduces commutation loss and voltage overshoot during hard commutation in synchronous rectifier and bidirectional DC/DC applications, contributing to overall system efficiency gains.

Can SIHA120N60E-GE3 be used in place of logic-level MOSFETs?

No, SIHA120N60E-GE3 is not a logic-level device: its V_GS(th) range is 3.0–5.0 V and it requires V_GS = 10 V for full R_DS(on) specification. It is incompatible with 3.3 V or 5 V microcontroller GPIO direct drive. Gate drivers delivering ≥10 V with ≥1 A peak current must be used to ensure reliable turn-on and minimize conduction loss in the SIHA120N60E-GE3.

What thermal resistance values apply to SIHA120N60E-GE3, and how are they measured?

SIHA120N60E-GE3 has R_thJC = 3.7 °C/W (max), measured from junction to case (drain tab), and R_thJA = 65 °C/W (max), measured from junction to ambient under standard JEDEC test board conditions. These values define thermal design boundaries: for example, at 34 W dissipation, R_thJC implies ≤126 °C junction rise above case temperature - requiring heatsink design to keep T_C ≤ 24 °C for T_J ≤ 150 °C.