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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA125N60EF-GE3

Name: SIHA125N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHA125N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA125N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA125N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 11A TO220

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Product details

Overview

SIHA125N60EF-GE3 from Vishay Siliconix is a 600 V, 11 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.109 Ω (typ. at V_GS = 10 V), Q_g = 31 nC (typ.), and avalanche-rated (E_AS = 88 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA125N60EF-GE3 datasheet, SIHA125N60EF-GE3 pinout, SIHA125N60EF-GE3 application, or SIHA125N60EF-GE3 equivalent, key selection criteria include its fast body diode (t_rr = 117 ns typ., Q_rr = 0.7 μC), low C_oss(er) = 54 pF, and 150 °C maximum junction temperature - critical for thermally constrained industrial and solar inverter designs.

Technical Context

This EF-series MOSFET employs Vishay's 4th-generation E-series silicon technology optimized for hard-switched and resonant topologies. Its low FOM (R_DS(on) × Q_g) and reduced effective output capacitance (C_oss(er)) enable high-frequency operation with minimized switching loss and voltage overshoot during turn-off.

The integrated fast-recovery body diode supports synchronous rectification and ZVS transitions in LLC and phase-shifted full-bridge converters. Its rated dv/dt capability (70 V/ns) and unclamped inductive switching (UIS) robustness ensure reliable operation under transient overloads and inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for telecom/server PFC stages
R_DS(on) typ.	0.109 Ω at V_GS = 10 V - enables <1.3 W conduction loss at 11 A continuous drain current
Q_g typ.	31 nC - reduces gate drive power and allows use of lower-cost drivers in 100–300 kHz SMPS
t_rr typ.	117 ns - minimizes reverse recovery loss and EMI in high-frequency PFC boost circuits
E_AS	88 mJ - provides ruggedness against inductive energy spikes without external snubbers
R_thJC max	3.7 °C/W - enables 179 W power dissipation with ≤ 50 °C case-to-ambient rise under forced air cooling
C_oss(er)	54 pF - lowers capacitive turn-on loss and improves light-load efficiency in resonant converters

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free, halogen-free); dimensions per Vishay Doc. #62649 - D = 8.5 mm, d1 = 15.0 mm, E = 10.0 mm, L = 13.6 mm, ØP = 3.2 mm.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power path	Internally connected to metal tab - requires electrically isolated heatsink mounting
G (Gate)	Control input	High-impedance MOS gate; requires <1 Ω series resistance to damp ringing and limit peak current
S (Source)	Power return and reference	Common node for gate drive return and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Fast body diode with low Q_rr	Q_rr = 0.7 μC (typ.) enables efficient synchronous rectification and reduces cross-conduction loss in half-bridge configurations
Low effective output capacitance	C_oss(er) = 54 pF minimizes stored energy (E_oss) and improves zero-voltage switching margin in LLC resonant converters
Avalanche energy rating	E_AS = 88 mJ ensures reliable operation during unclamped inductive switching events without derating
Thermal performance	R_thJC = 3.7 °C/W supports high-power density designs with compact heatsinks in space-constrained server PSUs
Lead-free/halogen-free construction	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (Doc. #99912)

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: High-density 3 kW+ AC-DC front-end with active PFC and LLC resonant DC-DC stage. IC Role / Device Role / Timing Role: Primary-side switching device in boost PFC and primary switch in LLC half-bridge. Use Value: Low R_DS(on) and Q_g reduce conduction and gate loss; fast body diode enables ZVS across wide load range.	Use Scenario: -48 V telecom rectifier module operating at 200 kHz with tight thermal constraints. IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge topology handling 25 A output current. Use Value: 150 °C T_J rating and low R_thJC allow sustained operation at 85 °C ambient without derating.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: String-level MPPT and DC-AC conversion in 5–10 kW single-phase inverters. IC Role / Device Role / Timing Role: DC-link switch in H-bridge inverter stage; handles bidirectional current during reactive power control. Use Value: Rated dv/dt (70 V/ns) and robust UIS withstand grid fault transients and rapid voltage reversals.	Use Scenario: 3-phase IGBT gate driver auxiliary supply and regenerative braking clamp circuit in HVAC drives. IC Role / Device Role / Timing Role: Fast-switching clamp MOSFET in active snubber network for IGBT protection. Use Value: Low C_oss(er) and fast t_rr minimize snubber loss and improve system efficiency by >0.4 % at full load.

Server Power Supplies

Telecom Rectifiers

Use Scenario: High-density 3 kW+ AC-DC front-end with active PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Primary-side switching device in boost PFC and primary switch in LLC half-bridge.

Use Value: Low R_DS(on) and Q_g reduce conduction and gate loss; fast body diode enables ZVS across wide load range.

Use Scenario: -48 V telecom rectifier module operating at 200 kHz with tight thermal constraints.

IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge topology handling 25 A output current.

Use Value: 150 °C T_J rating and low R_thJC allow sustained operation at 85 °C ambient without derating.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: String-level MPPT and DC-AC conversion in 5–10 kW single-phase inverters.

IC Role / Device Role / Timing Role: DC-link switch in H-bridge inverter stage; handles bidirectional current during reactive power control.

Use Value: Rated dv/dt (70 V/ns) and robust UIS withstand grid fault transients and rapid voltage reversals.

Use Scenario: 3-phase IGBT gate driver auxiliary supply and regenerative braking clamp circuit in HVAC drives.

IC Role / Device Role / Timing Role: Fast-switching clamp MOSFET in active snubber network for IGBT protection.

Use Value: Low C_oss(er) and fast t_rr minimize snubber loss and improve system efficiency by >0.4 % at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.085 Ω (lower), Q_g = 55 nC (higher), TO-247 package	Higher conduction efficiency but larger footprint and higher gate drive loss	Prefer when board space permits and gate drive capability supports 55 nC charge
IXFH32N60P	R_DS(on) = 0.18 Ω (higher), Q_g = 42 nC, TO-247, no fast diode spec	Lower cost but slower body diode (t_rr not specified); unsuitable for ZVS PFC	Select only for non-resonant, hard-switched applications where diode recovery is not critical

Compared with STW48N60M2 and IXFH32N60P, SIHA125N60EF-GE3 offers optimal balance of low R_DS(on), moderate Q_g, fast body diode, and compact TO-220 FULLPAK packaging - making it ideal for space- and thermally constrained high-frequency PFC and resonant converter designs.

Availability

SIHA125N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHA125N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The EF Series - including SIHA125N60EF-GE3 - was engineered for high-efficiency, high-frequency switching in server, telecom, and renewable energy power systems, emphasizing low FOM, fast body diode, and rugged avalanche capability.

FAQ

What is the maximum continuous drain current rating for SIHA125N60EF-GE3 at 100 °C case temperature?

The SIHA125N60EF-GE3 has a continuous drain current rating of 7 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value is limited by junction temperature (T_J ≤ 150 °C) and must be applied with proper heatsinking and thermal design to maintain safe operating area compliance.

Does SIHA125N60EF-GE3 have a specified reverse recovery time for its body diode?

Yes, SIHA125N60EF-GE3 specifies reverse recovery time (t_rr) as 117 ns (typ.) and 234 ns (max.) at T_J = 25 °C, I_F = 12 A, di/dt = 100 A/μs, and V_R = 400 V. This fast recovery characteristic is integral to its EF-series designation and enables high-efficiency operation in PFC and resonant topologies.

What is the gate-source threshold voltage range for SIHA125N60EF-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHA125N60EF-GE3 is specified as 3.0 V (min) to 5.0 V (max) at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity in noisy power environments.

Is SIHA125N60EF-GE3 suitable for use in zero-voltage switching (ZVS) circuits?

Yes, SIHA125N60EF-GE3 is well-suited for ZVS applications due to its low C_oss(er) = 54 pF, fast body diode (t_rr = 117 ns typ.), and rated dv/dt = 70 V/ns. These characteristics reduce turn-on loss and improve soft-switching margin in LLC and phase-shifted full-bridge converters using SIHA125N60EF-GE3.

What is the thermal resistance from junction to case (R_thJC) for SIHA125N60EF-GE3?

The maximum junction-to-case thermal resistance (R_thJC) for SIHA125N60EF-GE3 is 3.7 °C/W, measured from junction to the drain-connected metal tab. This value is critical for calculating allowable power dissipation and heatsink requirements - for example, at ΔT = 50 °C, SIHA125N60EF-GE3 can dissipate up to ~13.5 W continuously with appropriate mounting.

SIHA125N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1533 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA125N60EF-GE3 FAQ

1.How can I place an order for SIHA125N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA125N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA125N60EF-GE3 reliable?

The price and inventory of SIHA125N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA125N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA125N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA125N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA125N60EF-GE3?

SIHA125N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA125N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA125N60EF-GE3?

For technical support, including SIHA125N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA125N60EF-GE3 requirements.

6.How does Aetrix verify that SIHA125N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA125N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA125N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA125N60EF-GE3?

All SIHA125N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA125N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA125N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHA125N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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