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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA12N50E-E3

Name: SIHA12N50E-E3
Brand: Vishay Siliconix
SKU: SIHA12N50E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA12N50E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA12N50E-E3.pdf

Description:: MOSFET N-CH 500V 10.5A TO220

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Product details

Overview

SIHA12N50E-E3 from Vishay Siliconix is a 500 V, 10.5 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.380 Ω @ V_GS = 10 V, Q_g = 50 nC, and avalanche-rated (E_AS = 103 mJ). It serves as a primary switching device in hard-switched PFC and flyback converters for ATX power supplies and LED lighting.

For engineers reviewing the SIHA12N50E-E3 datasheet, SIHA12N50E-E3 pinout, SIHA12N50E-E3 application, or SIHA12N50E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), robust dV/dt immunity (70 V/ns), body diode recovery performance (t_rr = 244 ns), and thermal resistance (R_thJC = 3.9 °C/W) for high-efficiency SMPS designs.

Technical Context

This MOSFET employs planar VDMOS technology optimized for high-voltage switching with minimized conduction and switching losses. Its gate charge profile (Q_gs = 6 nC, Q_gd = 10 nC) supports fast, controlled turn-on/turn-off in fixed-frequency topologies like two-switch forward and PFC boost stages.

The integral body diode is rated for continuous 10.5 A source current and exhibits low reverse recovery charge (Q_rr = 2.5 μC) and peak reverse recovery current (I_RRM = 19 A), enabling reliable operation in discontinuous conduction mode (DCM) and quasi-resonant flyback circuits without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients in PFC and industrial SMPS
R_DS(on) max	0.380 Ω @ 10 V - enables <1.4 W conduction loss at 6 A, reducing heatsink requirements
Q_g max	50 nC - determines gate drive power and influences switching speed in 65–130 kHz converters
E_AS	103 mJ - ensures ruggedness against unclamped inductive switching events in flyback and forward converters
R_thJC	3.9 °C/W - allows 32 W dissipation with ≤125 °C case temperature rise, supporting compact thermal design
t_rr	244 ns - limits diode reverse recovery stress on synchronous rectifiers and adjacent switches
dV/dt rating	70 V/ns - suppresses false turn-on in high-dV/dt environments such as high-side PFC switch nodes

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free, RoHS-compliant); dimensions per Vishay Doc. #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, with drain-connected tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heatsink interface	Electrically connected to metal tab; requires insulated mounting hardware when isolated from chassis ground
Gate	Control input for channel modulation	Low-impedance input (R_g = 0.92 Ω typ.) requiring <50 nC drive; sensitive to ESD (±30 V rating)
Source	Reference node for gate drive and current sensing	Common return for load current and gate driver ground; critical for stable switching in high-side configurations

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	19 Ω·nC - reduces total power loss in both conduction and switching phases of hard-switched topologies
Avalanche energy rating (E_AS)	103 mJ - eliminates need for external clamping in inductive load switching applications
Body diode Q_rr	2.5 μC - minimizes cross-conduction risk and EMI during diode commutation in flyback converters
High dV/dt immunity	70 V/ns - prevents spurious turn-on in high-noise, high-slew-rate gate drive environments
Low C_iss	886 pF - eases gate driver selection and improves noise immunity in high-frequency SMPS

Applications

ATX Power Supply PFC Stage	Two-Stage LED Driver
Use Scenario: Boost converter operating at 65–100 kHz in PC silver box power supplies with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Primary high-side switching element in continuous conduction mode (CCM) PFC, synchronized to line frequency zero-crossing. Use Value: Low R_DS(on) and Q_g enable >95 % efficiency at full load; avalanche rating handles line surge events without failure.	Use Scenario: Secondary-stage DC-DC converter driving constant-current LED strings after bulk AC/DC rectification. IC Role / Device Role / Timing Role: Main switch in flyback topology delivering isolated 36 V/1.5 A output with primary-side regulation. Use Value: Fast body diode recovery (t_rr = 244 ns) reduces switching loss and EMI; TO-220 FULLPAK enables direct heatsink attachment for thermal stability.
Industrial SMPS	Two-Switch Forward Converter
Use Scenario: 24 V/15 A regulated output supply for PLC I/O modules with wide ambient temperature range (−40 to +85 °C). IC Role / Device Role / Timing Role: Primary switch in half-bridge configuration with active clamp, operating at 100 kHz with 50 % duty cycle. Use Value: R_thJC = 3.9 °C/W and T_J rating up to +150 °C ensure reliability under sustained load and elevated ambient conditions.	Use Scenario: Telecom power module converting 380 V DC bus to 12 V/20 A output using transformer reset via auxiliary switches. IC Role / Device Role / Timing Role: Main power switch in two-switch forward topology, conducting during main switch ON time and blocking during reset phase. Use Value: 500 V V_DS rating provides sufficient margin over 380 V bus; low C_oss (52 pF) minimizes capacitive turn-off loss during high-frequency reset transitions.

ATX Power Supply PFC Stage

Two-Stage LED Driver

Use Scenario: Boost converter operating at 65–100 kHz in PC silver box power supplies with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary high-side switching element in continuous conduction mode (CCM) PFC, synchronized to line frequency zero-crossing.

Use Value: Low R_DS(on) and Q_g enable >95 % efficiency at full load; avalanche rating handles line surge events without failure.

Use Scenario: Secondary-stage DC-DC converter driving constant-current LED strings after bulk AC/DC rectification.

IC Role / Device Role / Timing Role: Main switch in flyback topology delivering isolated 36 V/1.5 A output with primary-side regulation.

Use Value: Fast body diode recovery (t_rr = 244 ns) reduces switching loss and EMI; TO-220 FULLPAK enables direct heatsink attachment for thermal stability.

Industrial SMPS

Two-Switch Forward Converter

Use Scenario: 24 V/15 A regulated output supply for PLC I/O modules with wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role / Timing Role: Primary switch in half-bridge configuration with active clamp, operating at 100 kHz with 50 % duty cycle.

Use Value: R_thJC = 3.9 °C/W and T_J rating up to +150 °C ensure reliability under sustained load and elevated ambient conditions.

Use Scenario: Telecom power module converting 380 V DC bus to 12 V/20 A output using transformer reset via auxiliary switches.

IC Role / Device Role / Timing Role: Main power switch in two-switch forward topology, conducting during main switch ON time and blocking during reset phase.

Use Value: 500 V V_DS rating provides sufficient margin over 380 V bus; low C_oss (52 pF) minimizes capacitive turn-off loss during high-frequency reset transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.38 Ω, Q_g = 45 nC, TO-220FP package (shorter leads, no full-tab drain)	Lacks full-tab drain connection; lower thermal conductivity (R_thJC = 4.5 °C/W) limits power density	Prefer SIHA12N50E-E3 where direct tab-to-heatsink mounting and higher thermal performance are required.
IXTH12N50L	500 V, 12 A, R_DS(on) = 0.39 Ω, Q_g = 42 nC, TO-247AC package with isolated tab	TO-247 offers higher PD (68 W), but larger footprint and higher cost; no avalanche rating specified	Choose SIHA12N50E-E3 for cost-sensitive, space-constrained ATX/LED designs needing proven avalanche ruggedness.

Compared with STP12NK50ZFP and IXTH12N50L, SIHA12N50E-E3 delivers superior thermal performance (R_thJC = 3.9 °C/W), guaranteed avalanche capability (103 mJ), and optimized gate charge distribution for stable hard-switched operation-making it ideal for compact, high-reliability 500 V SMPS designs.

Availability

SIHA12N50E-E3 is available at Aetrix Electronics and suitable for ATX power supplies, LED lighting drivers, and industrial switch-mode power supplies requiring stable component supply, lead-free compliance, and long-term manufacturing continuity.

Supply support for SIHA12N50E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHA12N50E-E3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, medium-current switching in hard-switched topologies where low FOM, avalanche robustness, and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current rating for SIHA12N50E-E3 at 100 °C case temperature?

The SIHA12N50E-E3 has a continuous drain current rating of 6.6 A at T_C = 100 °C, derated linearly from 10.5 A at 25 °C using a factor of 0.91 W/°C. This value reflects safe operation under steady-state thermal conditions with adequate heatsinking and accounts for junction temperature limits of 150 °C.

Does SIHA12N50E-E3 have an avalanche-rated specification, and what does it mean for circuit design?

Yes, SIHA12N50E-E3 is fully avalanche-rated with E_AS = 103 mJ (single-pulse, test condition: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2.7 A). This means the device can safely absorb inductive energy during unclamped switching events-eliminating the need for external RCD clamps in flyback or forward converters and improving system reliability.

What is the gate-source threshold voltage range for SIHA12N50E-E3, and how does it affect drive circuit compatibility?

The gate-source threshold voltage (V_GS(th)) for SIHA12N50E-E3 is specified from 2.0 V to 4.0 V at I_D = 250 μA. This standard-level threshold ensures compatibility with 10 V gate drivers while avoiding unintended turn-on from noise; it is not a logic-level part, so 5 V microcontroller outputs require level-shifting or buffer amplification to achieve full enhancement.

How does the body diode performance of SIHA12N50E-E3 compare to typical power MOSFETs, and why does it matter in flyback designs?

The SIHA12N50E-E3 body diode exhibits t_rr = 244 ns and Q_rr = 2.5 μC at I_F = 6 A, dI/dt = 100 A/μs, and T_J = 25 °C. These values are significantly better than many general-purpose MOSFETs, reducing reverse recovery losses and EMI in flyback converters-especially critical in high-frequency, high-density LED driver designs where diode commutation dominates switching loss.

Is SIHA12N50E-E3 compatible with lead-free reflow soldering processes, and what is the maximum peak temperature allowed?

Yes, SIHA12N50E-E3 is lead-free and halogen-free (per ordering code -E3), qualified for standard Pb-free reflow. The maximum peak soldering temperature is 300 °C for 10 seconds, consistent with IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. Proper pre-bake and profile adherence are recommended to prevent package delamination.

SIHA12N50E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 886 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA12N50E-E3 FAQ

1.How can I place an order for SIHA12N50E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA12N50E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA12N50E-E3 reliable?

The price and inventory of SIHA12N50E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA12N50E-E3 is usually 5 days.

3.What payment methods are accepted for SIHA12N50E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA12N50E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA12N50E-E3?

SIHA12N50E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA12N50E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA12N50E-E3?

For technical support, including SIHA12N50E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA12N50E-E3 requirements.

6.How does Aetrix verify that SIHA12N50E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA12N50E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA12N50E-E3 meets industry standards.

7.What is the process for return or replacement of SIHA12N50E-E3?

All SIHA12N50E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA12N50E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA12N50E-E3 part is unused and in its original packaging.

Return procedure for SIHA12N50E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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