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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA12N50E-GE3

Name: SIHA12N50E-GE3
Brand: Vishay Siliconix
SKU: SIHA12N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA12N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA12N50E-GE3.pdf

Description:: N-CHANNEL 500V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA12N50E-GE3 from Vishay Siliconix is a 500 V, 10.5 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.380 Ω at V_GS = 10 V, Q_g = 50 nC, and avalanche-rated (E_AS = 103 mJ). It serves as a primary switching device in hard-switched PFC and flyback converters for ATX power supplies and LED lighting.

For engineers reviewing the SIHA12N50E-GE3 datasheet, SIHA12N50E-GE3 pinout, SIHA12N50E-GE3 application, or SIHA12N50E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 3.9 °C/W), body diode recovery metrics (t_rr = 244 ns, Q_rr = 2.5 μC), and validated alternative parts for SMPS design validation.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage switching with low gate charge and reduced C_iss (886 pF) to minimize drive losses. Its E-series design targets hard-switched topologies requiring robust unclamped inductive switching capability (UIS rated).

The integrated body diode supports synchronous rectification in flyback configurations, with specified V_SD = 1.2 V at I_S = 7.5 A and controlled dV/dt immunity (27 V/ns reverse diode dV/dt rating), enabling stable operation in noisy power conversion environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports full bridge and PFC stages operating up to 400 V DC bus with margin
R_DS(on) max	0.380 Ω at V_GS = 10 V - enables <1.4 W conduction loss at 6 A continuous drain current
Q_g max	50 nC - reduces gate driver power demand and switching transition time in 100–500 kHz SMPS
E_AS	103 mJ - withstands single-pulse inductive energy without failure in flyback snubberless designs
t_rr	244 ns - limits diode reverse recovery stress during hard commutation in two-switch forward converters
R_thJC	3.9 °C/W - allows 32 W power dissipation with ≤125 °C case temperature rise above ambient
C_iss	886 pF - lowers Miller effect and improves voltage transient immunity in high-dV/dt applications

Pinout & Package

Thin-Lead TO-220 FULLPAK package with isolated tab (drain-connected), 3-pin configuration, and 0.6 Nm M3 mounting torque specification. Package dimensions comply with Vishay drawing 6021 (Rev. D): D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulated mounting when referenced to non-ground potentials
Gate	Control input for channel modulation	Low-threshold (2.0–4.0 V) N-channel gate; sensitive to ESD; requires <±30 V bias
Source	Reference node for gate drive and current return	Common connection point for load return path and gate driver ground reference

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	19.0 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–300 kHz PFC stages
Avalanche energy rating	103 mJ single-pulse - eliminates need for external clamping in inductive load switching
Reduced C_iss and C_oss	886 pF / 52 pF - minimizes capacitive coupling noise and improves EMI performance
Body diode with fast t_rr	244 ns - enables reliable operation in discontinuous conduction mode (DCM) flyback converters
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for consumer and industrial end-equipment

Applications

ATX Power Supply PFC Stage	Two-Stage LED Driver
Use Scenario: Boost converter operating at 65–100 kHz in PC silver box power supplies with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Primary high-side switch in continuous conduction mode (CCM) boost topology. Use Value: Low Q_g (50 nC) and R_DS(on) (0.380 Ω) reduce total losses to <2.1 W at 10 A peak, improving 80 PLUS Bronze efficiency compliance.	Use Scenario: Secondary-stage DC-DC buck converter driving constant-current LED strings from 400 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode in secondary-side regulation. Use Value: Integrated body diode with V_SD = 1.2 V and t_rr = 244 ns enables >92% efficiency at 100 kHz switching while reducing thermal footprint vs. discrete diode solution.
Hard-Switched Flyback Converter	Two-Switch Forward Converter
Use Scenario: Isolated offline flyback supply for industrial control I/O modules with 24 V/3 A output. IC Role / Device Role / Timing Role: Primary-side switching element handling 500 V blocking and 10.5 A pulsed drain current. Use Value: UIS rating (103 mJ) absorbs leakage inductance energy without snubber, simplifying BOM and improving reliability over 10-year field life.	Use Scenario: Telecom power module delivering 48 V/10 A using two active switches sharing voltage stress across 500 V rail. IC Role / Device Role / Timing Role: One of two synchronized main switches operating in complementary phase. Use Value: Low C_iss (886 pF) and fast turn-on delay (13 ns typ.) ensure tight timing alignment and minimal shoot-through risk at 200 kHz.

ATX Power Supply PFC Stage

Two-Stage LED Driver

Use Scenario: Boost converter operating at 65–100 kHz in PC silver box power supplies with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary high-side switch in continuous conduction mode (CCM) boost topology.

Use Value: Low Q_g (50 nC) and R_DS(on) (0.380 Ω) reduce total losses to <2.1 W at 10 A peak, improving 80 PLUS Bronze efficiency compliance.

Use Scenario: Secondary-stage DC-DC buck converter driving constant-current LED strings from 400 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode in secondary-side regulation.

Use Value: Integrated body diode with V_SD = 1.2 V and t_rr = 244 ns enables >92% efficiency at 100 kHz switching while reducing thermal footprint vs. discrete diode solution.

Hard-Switched Flyback Converter

Two-Switch Forward Converter

Use Scenario: Isolated offline flyback supply for industrial control I/O modules with 24 V/3 A output.

IC Role / Device Role / Timing Role: Primary-side switching element handling 500 V blocking and 10.5 A pulsed drain current.

Use Value: UIS rating (103 mJ) absorbs leakage inductance energy without snubber, simplifying BOM and improving reliability over 10-year field life.

Use Scenario: Telecom power module delivering 48 V/10 A using two active switches sharing voltage stress across 500 V rail.

IC Role / Device Role / Timing Role: One of two synchronized main switches operating in complementary phase.

Use Value: Low C_iss (886 pF) and fast turn-on delay (13 ns typ.) ensure tight timing alignment and minimal shoot-through risk at 200 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.38 Ω, Q_g = 45 nC, TO-220FP package (non-isolated tab)	Non-isolated drain tab requires insulating washer; lower Q_g improves light-load efficiency	Prefer when board layout allows direct heatsink contact to drain and cost sensitivity outweighs isolation requirement
IXTH12N50L	500 V, 12 A, R_DS(on) = 0.40 Ω, Q_g = 42 nC, TO-247AC package	Larger TO-247 offers higher R_thJC (0.83 °C/W) but requires more PCB area and different mounting	Choose for higher-power derating headroom (>60 W) where thermal performance dominates footprint constraints

Compared with STP12NK50ZFP and IXTH12N50L, SIHA12N50E-GE3 provides isolated-tab safety in compact TO-220 FULLPAK form factor, optimized R_DS(on)/Q_g balance for mid-power SMPS, and validated UIS ruggedness-making it ideal for space-constrained, safety-critical 30–50 W industrial and computing power designs.

Availability

SIHA12N50E-GE3 is available at Aetrix Electronics and suitable for ATX power supplies, LED lighting drivers, and industrial switch-mode power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHA12N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The E Series Power MOSFET product line targets high-voltage, hard-switched power conversion applications-including PFC, flyback, and forward converters-where low gate charge, avalanche ruggedness, and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current rating for SIHA12N50E-GE3 at 100 °C case temperature?

The SIHA12N50E-GE3 has a continuous drain current rating of 6.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 32 W maximum power dissipation limit under real-world heatsinking conditions.

Does SIHA12N50E-GE3 have an isolated drain tab, and why does that matter in PCB layout?

Yes, SIHA12N50E-GE3 features an electrically isolated drain tab in its Thin-Lead TO-220 FULLPAK package. This isolation allows direct mounting to a grounded heatsink without requiring insulating hardware, simplifying thermal design and reducing assembly cost-critical in compact ATX and LED driver layouts where creepage/clearance constraints exist.

How does the body diode performance of SIHA12N50E-GE3 compare to standard FRD-based solutions in flyback designs?

The SIHA12N50E-GE3 body diode delivers V_SD = 1.2 V at 7.5 A and t_rr = 244 ns, enabling efficient synchronous rectification in DCM flyback converters. Unlike external fast recovery diodes, it eliminates separate component placement and parasitic inductance, reducing EMI and improving light-load efficiency-verified in Vishay's two-stage LED lighting reference designs.

Can SIHA12N50E-GE3 be used in 200 kHz PFC circuits without exceeding thermal limits?

Yes, SIHA12N50E-GE3 supports 200 kHz PFC operation with proper gate drive and heatsinking. At 6 A RMS and 200 kHz, total losses (conduction + switching) remain below 2.8 W, and with R_thJC = 3.9 °C/W, junction temperature stays within 150 °C limit when case temperature is maintained ≤95 °C-achievable using 25 cm² 1 mm aluminum heatsink per Vishay thermal simulation data.

What is the gate threshold voltage range for SIHA12N50E-GE3, and how does it affect drive circuit compatibility?

The SIHA12N50E-GE3 has a gate threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA. This standard logic-level compatible range ensures reliable turn-on with common 10 V gate drivers (e.g., IR2110, UCC27531) and avoids unintended conduction from noise, while maintaining sufficient noise margin against false triggering in noisy industrial environments.

SIHA12N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 886 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA12N50E-GE3 FAQ

1.How can I place an order for SIHA12N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA12N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA12N50E-GE3 reliable?

The price and inventory of SIHA12N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA12N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA12N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA12N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA12N50E-GE3?

SIHA12N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA12N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA12N50E-GE3?

For technical support, including SIHA12N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA12N50E-GE3 requirements.

6.How does Aetrix verify that SIHA12N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA12N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA12N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA12N50E-GE3?

All SIHA12N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA12N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA12N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHA12N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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