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Vishay Siliconix SIHA12N60E-E3
- Part No.:
- SIHA12N60E-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
SIHA12N60E-E3.pdf
- Description:
- MOSFET N-CH 600V 12A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:923
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Product details
Overview
SIHA12N60E-E3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring RDS(on) = 0.38 Ω (max) at VGS = 10 V, Qg = 58 nC (max), and avalanche-rated EAS = 117 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages.
For engineers reviewing the SIHA12N60E-E3 datasheet, SIHA12N60E-E3 pinout, SIHA12N60E-E3 application, or SIHA12N60E-E3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), ultra-low gate charge, and rugged unclamped inductive switching capability under 4.5 A UIS conditions.
Technical Context
This MOSFET employs planar stripe silicon technology with optimized cell pitch and gate oxide integrity to achieve stable 600 V blocking while maintaining low conduction and switching losses. Its Ciss = 937 pF (typ) and Coss = 53 pF (typ) support fast, controlled turn-on/turn-off in hard-switched topologies.
The integral body diode exhibits trr = 350 ns (typ) and Qrr = 4 μC (typ) at IF = 6 A, dI/dt = 100 A/μs, enabling reliable operation in continuous-conduction-mode PFC and flyback snubber recovery paths without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC input rectified rails with ≥20 % margin for surge and ripple. |
| RDS(on) max | 0.38 Ω at VGS = 10 V, TJ = 25 °C - enables ≤4.3 W conduction loss at 10 A DC, suitable for 100–300 W SMPS output stages. |
| Qg max | 58 nC - reduces gate drive power and allows use of low-current drivers (e.g., <100 mA peak) in 100 kHz–300 kHz designs. |
| EAS | 117 mJ (single-pulse) - withstands energy transients in PFC boost inductors during overloads or startup without failure. |
| Ciss | 937 pF (typ) - limits Miller-induced shoot-through risk and eases gate driver stability in half-bridge configurations. |
| tr/tf | 19–38 ns (rise/fall time) - supports clean edge control in ZVS/ZCS resonant converters up to 500 kHz. |
| TJ range | −55 °C to +150 °C - qualified for industrial and computing power supply environments with full derating above 100 °C case temperature. |
Pinout & Package
SIHA12N60E-E3 is housed in a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with drain-connected tab for direct heatsinking and 3.8 °C/W junction-to-case thermal resistance. The package features shortened leads for improved creepage/clearance and reduced parasitic inductance vs. standard TO-220.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path to high-side switch node | Electrically connected to metal tab - must be isolated from chassis unless system ground-referenced; enables low-inductance thermal path to heatsink. |
| Gate | Control terminal for channel modulation | High-impedance MOS input requiring <100 nA leakage; sensitive to ESD - requires series gate resistor (9.1 Ω typical) and TVS clamping near driver. |
| Source | Reference node for gate drive and current return | Common connection point for sense resistor, driver ground, and local decoupling - layout critical to minimize dv/dt coupling into gate loop. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg figure-of-merit | 22.4 Ω·nC (0.38 Ω × 58 nC) - directly improves efficiency in both conduction- and switching-dominated operating regions. |
| Avalanche energy rating (UIS) | 117 mJ single-pulse - eliminates need for external clamping in boost PFC and offline flyback primary switches under fault conditions. |
| Ultra-low Qgd/Qg ratio | 22 % (13 nC / 58 nC) - reduces Miller plateau duration and improves immunity to false turn-on in high-dv/dt half-bridge legs. |
| Body diode reverse recovery (Qrr) | 4 μC (typ) - enables soft-recovery behavior in discontinuous-mode flyback and active-clamp forward converters. |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and Vishay's "Green" material policy - suitable for consumer electronics and computing OEMs with strict compliance requirements. |
Applications
| Switch Mode Power Supplies (SMPS) | Power Factor Correction (PFC) |
|---|---|
|
Use Scenario: Primary-side switching in 150–300 W open-frame AC/DC adapters and enclosed ATX PSUs. IC Role / Device Role / Timing Role: High-voltage power switch in flyback or LLC resonant converter primary stage, operating at 65–130 kHz. Use Value: Low RDS(on) minimizes conduction loss at full load; low Qg ensures efficient gate drive at elevated frequencies without excessive driver heating. |
Use Scenario: Boost switch in active PFC front-end for LED drivers and flat-panel TVs. IC Role / Device Role / Timing Role: Unidirectional high-side switch in continuous-conduction-mode (CCM) boost topology, handling 6–12 A RMS input current. Use Value: Avalanche rating protects against inductor saturation faults; fast body diode recovery avoids cross-conduction losses during zero-current switching transitions. |
| Fluorescent Ballast Lighting | Gaming Console Power Adapters |
|
Use Scenario: Resonant half-bridge switch in electronic fluorescent lamp (EFL) ballasts driving 32–58 W lamps. IC Role / Device Role / Timing Role: High-frequency (25–60 kHz) resonant switch with bidirectional voltage stress during dead-time commutation. Use Value: Robust dV/dt capability (70 V/ns) prevents spurious turn-on; low Coss ensures predictable resonant timing and minimal capacitive losses. |
Use Scenario: Primary switch in compact, high-density 65–90 W USB-C PD gaming adapter designs. IC Role / Device Role / Timing Role: Main switching element in QR flyback or active-clamp forward topology, operating with tight thermal constraints. Use Value: TO-220 FULLPAK's low RthJC (3.8 °C/W) enables >10 W/cm² power density; Pb-free/halogen-free compliance meets global retail certification mandates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK60ZFP | RDS(on) = 0.58 Ω (max), Qg = 42 nC, TO-220FP package (no drain tab) | Higher conduction loss; lower gate charge but no integrated heatsink interface | Prefer when board space is constrained and thermal management uses PCB copper; avoid where >10 A RMS current demands low RDS(on). |
| IXTP12N60P | RDS(on) = 0.45 Ω (max), Qg = 45 nC, TO-220 package with insulated tab | Slightly higher on-resistance; same avalanche rating (110 mJ); higher RthJC (4.5 °C/W) | Choose when legacy thermal interface design exists for insulated-tab TO-220; verify heatsink contact pressure due to higher thermal resistance. |
Compared with STP12NK60ZFP and IXTP12N60P, SIHA12N60E-E3 delivers the lowest RDS(on) × Qg FOM among 12 A/600 V MOSFETs in TO-220 form factor, enabling higher efficiency in thermally limited 200–300 W power supplies without increasing gate drive complexity.
Availability
SIHA12N60E-E3 is available at Aetrix Electronics and suitable for switch mode power supplies, power factor correction circuits, and lighting ballast systems requiring stable component supply across multi-year production cycles.
Supply support for SIHA12N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The E Series Power MOSFETs - including SIHA12N60E-E3 - were engineered for high-efficiency, high-voltage switching in consumer, computing, and industrial power conversion, emphasizing low FOM and ruggedness in cost-sensitive TO-220 packages.
FAQ
What is the maximum continuous drain current rating for SIHA12N60E-E3 at 100 °C case temperature?
The SIHA12N60E-E3 supports a continuous drain current of 7.8 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 3.8 °C/W RthJC limit. Designers must verify heatsink performance to maintain TC ≤ 100 °C under full-load conditions for SIHA12N60E-E3.
Does SIHA12N60E-E3 have a fully rated avalanche capability, and what test conditions apply?
Yes, SIHA12N60E-E3 is fully rated for unclamped inductive switching (UIS) with EAS = 117 mJ (single-pulse). Per the datasheet, this is measured at VDD = 50 V, starting TJ = 25 °C, L = 11.6 mH, Rg = 25 Ω, and IAS = 4.5 A. The device is not rated for repetitive avalanche; SIHA12N60E-E3 must be operated within SOA limits for sustained reliability.
What is the gate threshold voltage range for SIHA12N60E-E3, and how does it affect drive circuit design?
The gate-source threshold voltage VGS(th) for SIHA12N60E-E3 is specified from 2 V to 4 V at ID = 250 μA. This range confirms standard-level (not logic-level) drive requirements: robust turn-on necessitates ≥10 V gate drive, and designers must ensure gate voltage remains >4.5 V under worst-case loading to avoid linear-mode operation. SIHA12N60E-E3 gate drive circuits should include undervoltage lockout (UVLO) below 8 V.
How does the body diode performance of SIHA12N60E-E3 compare to standard FRDs in PFC applications?
SIHA12N60E-E3 features a fast-recovery body diode with trr = 350 ns (typ) and Qrr = 4 μC (typ) at IF = 6 A, dI/dt = 100 A/μs. While slower than dedicated fast-recovery diodes, this performance is sufficient for CCM PFC boost stages operating ≤100 kHz, where soft recovery reduces EMI and eliminates need for external diode in many designs. SIHA12N60E-E3 body diode conduction must be minimized via gate timing optimization.
Is SIHA12N60E-E3 compatible with lead-free reflow soldering processes?
Yes, SIHA12N60E-E3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per the Soldering Recommendations section. The device uses matte tin-plated leads and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1. SIHA12N60E-E3 requires no pre-bake for standard handling and supports standard Pb-free assembly lines without modification.
SIHA12N60E-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 937 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 33W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220 Full Pack
SIHA12N60E-E3 FAQ
1.How can I place an order for SIHA12N60E-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHA12N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHA12N60E-E3 reliable?
The price and inventory of SIHA12N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA12N60E-E3 is usually 5 days.
3.What payment methods are accepted for SIHA12N60E-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA12N60E-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHA12N60E-E3?
SIHA12N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHA12N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHA12N60E-E3?
For technical support, including SIHA12N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA12N60E-E3 requirements.
6.How does Aetrix verify that SIHA12N60E-E3 is sourced from the original manufacturer or authorized distributors?
All SIHA12N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA12N60E-E3 meets industry standards.
7.What is the process for return or replacement of SIHA12N60E-E3?
All SIHA12N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA12N60E-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHA12N60E-E3 part is unused and in its original packaging.
Return procedure for SIHA12N60E-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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