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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA12N60E-GE3

Name: SIHA12N60E-GE3
Brand: Vishay Siliconix
SKU: SIHA12N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA12N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA12N60E-GE3.pdf

Description:: N-CHANNEL 600V

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Product details

Overview

SIHA12N60E-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.38 Ω (max) at V_GS = 10 V, Q_g = 58 nC (max), and avalanche-rated E_AS = 117 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHA12N60E-GE3 datasheet, SIHA12N60E-GE3 pinout, SIHA12N60E-GE3 application, or SIHA12N60E-GE3 equivalent, this device is selected for its low FOM (R_DS(on) × Q_g), reduced switching losses, and robust unclamped inductive switching capability in industrial and consumer power conversion designs.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate oxide and body diode design to achieve balanced conduction and switching performance. Its 600 V V_DS rating supports universal-input offline applications, while the 117 mJ single-pulse avalanche energy rating enables reliable operation under transient overvoltage conditions without external snubbers.

The device exhibits C_iss = 937 pF (typ), C_oss = 53 pF (typ), and C_rss = 5 pF (typ) at V_DS = 100 V, enabling fast turn-on/turn-off with minimal Miller effect. Gate threshold voltage is tightly specified at 2–4 V, ensuring stable logic-level drive compatibility and low gate leakage (±100 nA at ±20 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % margin for surge and ringing in offline SMPS/PFC
R_DS(on) max @ 10 V	0.38 Ω - limits conduction loss to ≤ 5.5 W at 12 A continuous drain current
Q_g max	58 nC - enables efficient gate driving with <1.2 W average gate power at 100 kHz and 10 V swing
E_AS (single pulse)	117 mJ - withstands unclamped inductive energy up to 117 mJ without failure (tested per JEDEC JESD24-1)
T_J range	–55 °C to +150 °C - qualified for industrial ambient environments and thermally demanding enclosures
R_thJC max	3.8 °C/W - allows ≥27 W power dissipation with 50 °C case temperature rise (derated above 100 °C)
I_D cont @ T_C = 100 °C	7.8 A - defines usable current limit in real-world heatsink-limited thermal conditions

Pinout & Package

SIHA12N60E-GE3 uses the Thin-Lead TO-220 FULLPAK package: insulated plastic body with internally connected drain tab, 3-pin vertical lead frame, and 13.4–13.8 mm height. The drain (D) is electrically connected to the exposed metal tab on the backside; source (S) and gate (G) are on the front-side leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side power terminal	Electrically tied to package backside metal - requires insulating pad when mounted to heatsink; carries full load current and high dv/dt
Source (Lead 1)	Power return and gate reference node	Serves as common reference for gate drive and current sensing; low-inductance path critical for EMI control and dI/dt stability
Gate (Lead 2)	Control input for channel modulation	High-impedance MOS gate requiring <100 nA leakage handling; sensitive to ESD and ringing - needs local RC snubber or gate resistor

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	22.4 Ω·nC (0.38 Ω × 58.9 nC typ) - reduces total power loss in hard-switched topologies
Avalanche energy rated (UIS)	117 mJ single-pulse - eliminates need for external clamping in PFC boost inductors and flyback snubbers
Ultra-low gate charge	Q_g = 29 nC typ - cuts gate driver power consumption and enables use of smaller, lower-cost drivers
Reduced output capacitance	C_oss = 53 pF typ - minimizes turn-off loss and improves light-load efficiency in resonant converters
Body diode with fast recovery	t_rr = 350 ns, Q_rr = 4 μC - lowers reverse recovery loss in synchronous rectification and LLC half-bridge freewheeling

Applications

Switch Mode Power Supplies (SMPS)	Power Factor Correction (PFC)
Use Scenario: Primary-side switching in 150–300 W open-frame AC/DC adapters and industrial power modules. IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor in flyback or forward converter primary circuit. Use Value: Enables >90 % efficiency at full load due to low R_DS(on) and fast switching with minimal Q_g-driven losses.	Use Scenario: Boost switch in active PFC stages for LED drivers and ATX PSUs operating from 85–264 VAC input. IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost topology. Use Value: Sustains 600 V blocking with 12 A peak current and handles 117 mJ avalanche energy during line surges.
HID Lighting Ballasts	Consumer TV Power Supplies
Use Scenario: High-frequency resonant switching in electronic ballasts for 70–250 W metal halide lamps. IC Role / Device Role / Timing Role: Half-bridge upper-leg switch subjected to high dv/dt and repetitive inductive stress. Use Value: Low C_rss (5 pF) suppresses Miller-induced false turn-on; rugged body diode supports lamp ignition current reversal.	Use Scenario: Main power switch in standby and main power rails of 43–75 inch LCD/LED TVs with dual-output PSUs. IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant flyback delivering 12 V/3 A and 5 V/5 A outputs. Use Value: TO-220 FULLPAK insulation enables direct heatsink mounting without isolation hardware, reducing BOM cost and footprint.

Switch Mode Power Supplies (SMPS)

Power Factor Correction (PFC)

Use Scenario: Primary-side switching in 150–300 W open-frame AC/DC adapters and industrial power modules.

IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor in flyback or forward converter primary circuit.

Use Value: Enables >90 % efficiency at full load due to low R_DS(on) and fast switching with minimal Q_g-driven losses.

Use Scenario: Boost switch in active PFC stages for LED drivers and ATX PSUs operating from 85–264 VAC input.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost topology.

Use Value: Sustains 600 V blocking with 12 A peak current and handles 117 mJ avalanche energy during line surges.

HID Lighting Ballasts

Consumer TV Power Supplies

Use Scenario: High-frequency resonant switching in electronic ballasts for 70–250 W metal halide lamps.

IC Role / Device Role / Timing Role: Half-bridge upper-leg switch subjected to high dv/dt and repetitive inductive stress.

Use Value: Low C_rss (5 pF) suppresses Miller-induced false turn-on; rugged body diode supports lamp ignition current reversal.

Use Scenario: Main power switch in standby and main power rails of 43–75 inch LCD/LED TVs with dual-output PSUs.

IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant flyback delivering 12 V/3 A and 5 V/5 A outputs.

Use Value: TO-220 FULLPAK insulation enables direct heatsink mounting without isolation hardware, reducing BOM cost and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	R_DS(on) = 0.58 Ω (max), Q_g = 45 nC (max), TO-220FP package (non-insulated drain)	Higher conduction loss; requires isolated mounting; lower avalanche rating (E_AS = 75 mJ)	Prefer SIHA12N60E-GE3 where board space, thermal interface simplicity, or surge immunity are prioritized.
IXTH12N60L2	R_DS(on) = 0.36 Ω (max), Q_g = 62 nC (max), TO-247 package (larger footprint, higher R_thJC = 0.65 °C/W)	Lower R_DS(on) but higher gate drive demand; requires larger PCB area and more complex heatsinking	Prefer SIHA12N60E-GE3 for compact, cost-sensitive designs where 0.38 Ω R_DS(on) meets efficiency targets.

Compared with STP12NK60ZFP and IXTH12N60L2, SIHA12N60E-GE3 delivers best-in-class FOM for TO-220-form-factor devices, combines drain-isolation with industry-leading avalanche robustness, and fits legacy layouts without redesigning mechanical mounting or thermal interfaces.

Availability

SIHA12N60E-GE3 is available at Aetrix Electronics and suitable for switch-mode power supplies, power factor correction circuits, and HID lighting ballasts requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHA12N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHA12N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in industrial and consumer power conversion systems where ruggedness, low loss, and thermal stability are critical.

FAQ

What is the maximum continuous drain current for SIHA12N60E-GE3 at 100 °C case temperature?

The SIHA12N60E-GE3 supports 7.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe junction temperature operation below 150 °C under typical heatsink conditions. SIHA12N60E-GE3 must be mounted with proper thermal interface material and adequate heatsink surface area to sustain this current.

Does SIHA12N60E-GE3 have an insulated drain tab?

Yes, SIHA12N60E-GE3 features a fully insulated drain tab in the Thin-Lead TO-220 FULLPAK package - the metal drain connection is electrically isolated from the mounting surface by molded plastic. This eliminates the need for insulating washers or pads when attaching directly to grounded heatsinks, simplifying assembly and improving thermal reliability. SIHA12N60E-GE3 complies with creepage/clearance requirements for reinforced insulation in Class II systems.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA12N60E-GE3?

The body diode of SIHA12N60E-GE3 has a typical reverse recovery time (t_rr) of 350 ns under test conditions of T_J = 25 °C, I_F = 6 A, dI/dt = 100 A/μs, and V_R = 25 V. This fast recovery characteristic reduces switching loss during commutation in half-bridge and synchronous rectifier configurations. SIHA12N60E-GE3 also specifies Q_rr = 4 μC, supporting accurate loss modeling in high-frequency PFC designs.

Is SIHA12N60E-GE3 suitable for use in unclamped inductive switching (UIS) applications?

Yes, SIHA12N60E-GE3 is explicitly rated for unclamped inductive switching with a guaranteed single-pulse avalanche energy (E_AS) of 117 mJ, tested per JEDEC standard JESD24-1. This makes SIHA12N60E-GE3 appropriate for PFC boost inductors, relay drivers, and motor control circuits where inductive energy must be safely absorbed without external clamping components. Operation beyond single-pulse conditions requires detailed stress analysis.

What gate-source voltage range is safe for continuous operation of SIHA12N60E-GE3?

SIHA12N60E-GE3 supports continuous gate-source voltage operation from –30 V to +30 V, as defined in its Absolute Maximum Ratings. However, normal enhancement-mode switching uses +10 V to +15 V for full enhancement and low R_DS(on), while gate drive should avoid exceeding +20 V to prevent long-term oxide degradation. SIHA12N60E-GE3 gate leakage remains below ±100 nA at ±20 V, confirming robust gate oxide integrity within this range.

SIHA12N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 937 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA12N60E-GE3 FAQ

1.How can I place an order for SIHA12N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA12N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA12N60E-GE3 reliable?

The price and inventory of SIHA12N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA12N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA12N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA12N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA12N60E-GE3?

SIHA12N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA12N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA12N60E-GE3?

For technical support, including SIHA12N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA12N60E-GE3 requirements.

6.How does Aetrix verify that SIHA12N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA12N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA12N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA12N60E-GE3?

All SIHA12N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA12N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA12N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHA12N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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