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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA14N60E-E3

Name: SIHA14N60E-E3
Brand: Vishay Siliconix
SKU: SIHA14N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA14N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA14N60E-E3.pdf

Description:: MOSFET N-CHANNEL 600V 13A TO220

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Product details

Overview

SIHA14N60E-E3 from Vishay Siliconix is a 600 V, 13 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.269 Ω (typ. at V_GS = 10 V), Q_g = 32 nC (typ.), and avalanche-rated E_AS = 136 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHA14N60E-E3 datasheet, SIHA14N60E-E3 pinout, SIHA14N60E-E3 application, or SIHA14N60E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, 70 V/ns dV/dt ruggedness, and integrated body diode with t_rr = 281 ns - all critical for hard-switched, high-frequency SMPS designs.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate oxide and trench-assisted drift region design to achieve balanced conduction and switching losses. Its 600 V V_DS rating supports universal input (85–265 VAC) PFC and main switch topologies operating up to 480 V DC bus.

The device integrates a fast-recovery body diode (Q_rr = 3.4 μC, I_RRM = 22 A) and is rated for unclamped inductive switching (UIS) with E_AS = 136 mJ at T_J = 25 °C - enabling robust operation in flyback, LLC resonant, and hard-switched forward converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 480 V DC bus with 25 % margin for voltage spikes in industrial and telecom power systems
R_DS(on) typ	0.269 Ω at V_GS = 10 V, I_D = 7 A - enables <1.3 W conduction loss at 7 A, reducing heatsink requirements
Q_g typ	32 nC - lowers gate drive power and allows use of smaller, lower-cost drivers in 100–300 kHz SMPS
E_AS	136 mJ - withstands repetitive inductive energy transients without failure in UPS and motor drive H-bridge legs
t_rr	281 ns - minimizes reverse recovery loss and EMI in continuous conduction mode (CCM) PFC boost stages
R_thJC	3.8 °C/W - enables 147 W power dissipation with ≤ 50 °C case-to-ambient rise when mounted on ≥ 10 cm² copper pad

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free, RoHS-compliant), with drain-connected tab for direct thermal mounting and improved mechanical stability vs. standard TO-220.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically and thermally connected to internal die drain; requires insulated mounting hardware if chassis grounded
Source	Reference node for gate control and current return	Low-inductance connection point for sense resistor and driver ground return; shared with body diode cathode
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD; must be driven with ≤ 25 Ω series resistance to damp ringing

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	8.6 Ω·nC - reduces total power loss in both conduction and switching phases across 65–200 kHz range
Avalanche energy rating (E_AS)	136 mJ - eliminates need for external clamping in inductive load switching, simplifying layout and BOM
Fast body diode recovery	t_rr = 281 ns, Q_rr = 3.4 μC - cuts diode switching loss by >40 % vs. standard 600 V MOSFETs in CCM PFC
High dV/dt immunity	70 V/ns (T_J = 125 °C) - prevents false turn-on during fast voltage transitions in half-bridge configurations
Thin-Lead TO-220 FULLPAK	Reduced lead inductance and enhanced thermal coupling - improves EMI performance and thermal derating vs. standard TO-220

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 1–3 kW AC/DC front-end with active PFC + LLC resonant stage. IC Role / Device Role / Timing Role: High-voltage switching element handling 400–480 V DC bus, operating at 100–200 kHz with zero-voltage switching (ZVS) assist. Use Value: Low Q_g and fast t_rr reduce dead-time losses and improve ZVS window; R_DS(on) < 0.27 Ω maintains >96 % efficiency at full load.	Use Scenario: Output rectification and isolation switch in -48 V telecom rectifier modules with hold-up time extension. IC Role / Device Role / Timing Role: Synchronous rectifier and auxiliary switch in dual-active-bridge (DAB) topology with 300–400 kHz switching. Use Value: Avalanche rating ensures reliability during line surges; thin-lead package improves thermal response during burst-mode operation.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level MPPT converters feeding central inverters. IC Role / Device Role / Timing Role: High-side switch in boost converter stage operating at 50–100 kHz with wide input voltage range (200–1000 V). Use Value: 600 V V_DS and 136 mJ E_AS support safe operation under partial shading-induced overvoltage transients.	Use Scenario: Inverter leg switch in 3–7.5 kW variable-frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: Phase-leg MOSFET in 3-phase bridge handling 10–15 A RMS with 16 kHz PWM carrier. Use Value: Low C_iss (1205 pF) and Cr_ss (5 pF) minimize Miller-induced shoot-through risk; R_thJC = 3.8 °C/W sustains 150 °C junction temperature.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 1–3 kW AC/DC front-end with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400–480 V DC bus, operating at 100–200 kHz with zero-voltage switching (ZVS) assist.

Use Value: Low Q_g and fast t_rr reduce dead-time losses and improve ZVS window; R_DS(on) < 0.27 Ω maintains >96 % efficiency at full load.

Use Scenario: Output rectification and isolation switch in -48 V telecom rectifier modules with hold-up time extension.

IC Role / Device Role / Timing Role: Synchronous rectifier and auxiliary switch in dual-active-bridge (DAB) topology with 300–400 kHz switching.

Use Value: Avalanche rating ensures reliability during line surges; thin-lead package improves thermal response during burst-mode operation.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level MPPT converters feeding central inverters.

IC Role / Device Role / Timing Role: High-side switch in boost converter stage operating at 50–100 kHz with wide input voltage range (200–1000 V).

Use Value: 600 V V_DS and 136 mJ E_AS support safe operation under partial shading-induced overvoltage transients.

Use Scenario: Inverter leg switch in 3–7.5 kW variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Phase-leg MOSFET in 3-phase bridge handling 10–15 A RMS with 16 kHz PWM carrier.

Use Value: Low C_iss (1205 pF) and Cr_ss (5 pF) minimize Miller-induced shoot-through risk; R_thJC = 3.8 °C/W sustains 150 °C junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK60ZFP	R_DS(on) = 0.36 Ω (typ.), Q_g = 42 nC, E_AS = 120 mJ, TO-220FP package	Higher conduction loss and slower switching; less suitable for >150 kHz PFC	Lower cost alternative where efficiency < 95 % is acceptable and thermal budget allows higher R_DS(on)
IXTH14N60L2	R_DS(on) = 0.28 Ω (typ.), Q_g = 28 nC, E_AS = 110 mJ, TO-247 package	Lower Q_g but larger footprint and higher cost; no thin-lead thermal advantage	Better for ultra-high-frequency designs (>300 kHz) where gate drive loss dominates, but requires PCB rework for TO-247

Compared with STP14NK60ZFP and IXTH14N60L2, SIHA14N60E-E3 delivers optimal balance of low R_DS(on) × Q_g, avalanche ruggedness, and compact thermal packaging - making it preferred for space-constrained, high-efficiency 100–200 kHz telecom and server power supplies where board area and thermal management are critical.

Availability

SIHA14N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHA14N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHA14N60E-E3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for high-efficiency, high-reliability switch-mode power conversion in demanding industrial, telecom, and renewable energy applications.

FAQ

What is the maximum continuous drain current rating for SIHA14N60E-E3 at 100 °C case temperature?

The SIHA14N60E-E3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures reliable operation under sustained high-power conditions without exceeding T_J = 150 °C. The SIHA14N60E-E3 must be mounted on an adequately sized heatsink to maintain this rating.

Does SIHA14N60E-E3 support logic-level gate drive?

No, SIHA14N60E-E3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Driving it with only 5 V may result in incomplete turn-on and excessive conduction loss. The SIHA14N60E-E3 requires a 10 V gate drive for full performance and should be paired with a dedicated gate driver capable of sourcing/sinking ≥1 A peak current.

What is the significance of the "E" suffix in SIHA14N60E-E3?

Within Vishay's naming convention, the "E" in SIHA14N60E-E3 denotes the E Series - a family of high-voltage power MOSFETs optimized for low figure-of-merit (R_DS(on) × Q_g) and enhanced avalanche ruggedness. The "E" distinguishes it from earlier generations (e.g., "Z" or "L") and confirms compliance with Vishay's E Series specifications for switching efficiency and UIS capability. The SIHA14N60E-E3 is the lead-free (E3) variant of that series.

Can SIHA14N60E-E3 be used in synchronous rectification applications?

The SIHA14N60E-E3 is not recommended for synchronous rectification due to its relatively high R_DS(on) (0.269 Ω) and non-optimized body diode characteristics for bidirectional conduction. Its body diode t_rr = 281 ns and Q_rr = 3.4 μC are suitable for freewheeling but not for low-loss synchronous rectification, which demands sub-100 ns t_rr and <1 μC Q_rr. For such roles, dedicated low-V_F, low-Q_rr MOSFETs like Vishay's SiR626DP are preferred over the SIHA14N60E-E3.

What is the thermal resistance from junction to case (R_thJC) for SIHA14N60E-E3?

The maximum junction-to-case (drain) thermal resistance R_thJC for SIHA14N60E-E3 is 3.8 °C/W, as stated in the Thermal Resistance Ratings table. This value applies when the device is mounted with proper torque (0.6 Nm for M3 screw) on a flat, clean heatsink surface. The SIHA14N60E-E3 achieves this low R_thJC via its Thin-Lead TO-220 FULLPAK construction, which enhances thermal contact versus standard TO-220 packages.

SIHA14N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 309mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1205 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA14N60E-E3 FAQ

1.How can I place an order for SIHA14N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA14N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA14N60E-E3 reliable?

The price and inventory of SIHA14N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA14N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHA14N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA14N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA14N60E-E3?

SIHA14N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA14N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA14N60E-E3?

For technical support, including SIHA14N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA14N60E-E3 requirements.

6.How does Aetrix verify that SIHA14N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA14N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA14N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHA14N60E-E3?

All SIHA14N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA14N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA14N60E-E3 part is unused and in its original packaging.

Return procedure for SIHA14N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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