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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA14N60E-GE3

Name: SIHA14N60E-GE3
Brand: Vishay Siliconix
SKU: SIHA14N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA14N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA14N60E-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA14N60E-GE3 from Vishay Siliconix is a 600 V, 13 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.269 Ω (typ. at V_GS = 10 V), Q_g = 32 nC (typ.), and avalanche-rated E_AS = 136 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHA14N60E-GE3 datasheet, SIHA14N60E-GE3 pinout, SIHA14N60E-GE3 application, or SIHA14N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, 70 V/ns dV/dt capability, and robust UIS rating - critical for hard-switched industrial and renewable energy inverters.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve balanced conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on under wide drive conditions, while the integral body diode supports synchronous rectification and inductive load handling with t_rr = 281 ns and Q_rr = 3.4 μC.

The device operates within -55 °C to +150 °C junction temperature range and features R_thJC = 3.8 °C/W for efficient heat transfer to heatsinks. Its C_iss = 1205 pF and C_oss = 62 pF support fast, low-noise switching in high-frequency SMPS topologies up to 200 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input PFC and 480 V DC bus designs with margin
R_DS(on) typ	0.269 Ω at V_GS = 10 V - enables <1.3 W conduction loss at 7 A continuous current
Q_g typ	32 nC - reduces gate drive power and enables use of smaller, lower-cost drivers
E_AS	136 mJ - withstands unclamped inductive switching events without failure
C_iss	1205 pF - minimizes Miller effect and improves noise immunity in high-dV/dt environments
t_r/t_f	19/15 ns (typ.) - supports clean, fast transitions in hard-switched ZVS/ZCS circuits
T_J range	-55 to +150 °C - qualified for industrial and outdoor solar inverter ambient conditions

Pinout & Package

Thin-Lead TO-220 FULLPAK package with isolated drain tab (D), source (S), and gate (G) leads; compact 15.3 mm × 10.3 mm footprint, 13.6 mm height, and 3.8 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power terminal	Electrically connected to metal tab - must be mounted to heatsink with insulating pad if not referenced to ground
S (Source)	Power return and reference node	Common connection point for gate driver return, current sensing, and low-side switching reference
G (Gate)	Control input	High-impedance MOS control node requiring <100 nA leakage; sensitive to ESD and ringing - requires RC snubber or gate resistor ≤ 25 Ω

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	8.6 Ω·nC - directly reduces total power loss in both conduction and switching phases
Avalanche energy rating	136 mJ single-pulse - eliminates need for external clamping in flyback and LLC resonant converters
Ultra-low Q_gd/Q_g ratio	13/32 = 41 % - suppresses Miller-induced shoot-through and improves hard-switching robustness
Body diode t_rr & Q_rr	281 ns / 3.4 μC - enables reliable operation in synchronous rectification and bidirectional topologies
dV/dt immunity	70 V/ns - prevents false turn-on during high-slew-rate transients in motor drives and inverters

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage, medium-current main switch handling 400 V DC input and 100 kHz switching. Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, improving full-load efficiency by ≥0.4 % over legacy 650 V MOSFETs.	Use Scenario: Boost PFC stage in 2 kW telecom rectifier operating from 90–264 V AC input. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 600 V blocking and 13 A peak current. Use Value: Avalanche rating and 70 V/ns dV/dt tolerance ensure reliability during line surges and zero-crossing transitions without snubber redesign.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with unipolar modulation. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, blocking 1000 V DC link with 600 V rated device plus margin. Use Value: R_thJC = 3.8 °C/W and T_J max = +150 °C enable sustained 10 A RMS operation in sealed outdoor enclosures without forced air.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive using space-vector PWM. IC Role / Device Role / Timing Role: Medium-voltage IGBT replacement in 600 V class drives requiring fast, low-loss switching. Use Value: Low C_iss and fast t_r/t_f minimize dead-time distortion and improve torque linearity at 16 kHz carrier frequency.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, medium-current main switch handling 400 V DC input and 100 kHz switching.

Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, improving full-load efficiency by ≥0.4 % over legacy 650 V MOSFETs.

Use Scenario: Boost PFC stage in 2 kW telecom rectifier operating from 90–264 V AC input.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 600 V blocking and 13 A peak current.

Use Value: Avalanche rating and 70 V/ns dV/dt tolerance ensure reliability during line surges and zero-crossing transitions without snubber redesign.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with unipolar modulation.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, blocking 1000 V DC link with 600 V rated device plus margin.

Use Value: R_thJC = 3.8 °C/W and T_J max = +150 °C enable sustained 10 A RMS operation in sealed outdoor enclosures without forced air.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive using space-vector PWM.

IC Role / Device Role / Timing Role: Medium-voltage IGBT replacement in 600 V class drives requiring fast, low-loss switching.

Use Value: Low C_iss and fast t_r/t_f minimize dead-time distortion and improve torque linearity at 16 kHz carrier frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK60ZFP	600 V, 14 A, R_DS(on) = 0.32 Ω, Q_g = 45 nC, TO-220FP package	Higher conduction loss and slower switching; lacks UIS rating	Acceptable where cost is primary concern and avalanche stress is absent
IXTH12N60L2	600 V, 12 A, R_DS(on) = 0.36 Ω, Q_g = 22 nC, TO-247 package	Lower Q_g but larger footprint and higher R_DS(on); no specified E_AS	Preferred when gate drive power is constrained but board area allows TO-247

Compared with STP14NK60ZFP and IXTH12N60L2, SIHA14N60E-GE3 delivers superior FOM (8.6 vs. 14.4 and 7.9 Ω·nC), certified avalanche ruggedness, and industry-standard TO-220 FULLPAK thermal performance - making it optimal for space-constrained, high-reliability PFC and SMPS designs.

Availability

SIHA14N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle assurance, and traceable Vishay manufacturing origin.

Supply support for SIHA14N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and automotive-qualified components.

The SIHA14N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-frequency, high-efficiency switch-mode power conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for SIHA14N60E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA14N60E-GE3 is 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation without exceeding T_J = 150 °C. The SIHA14N60E-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHA14N60E-GE3 have an avalanche energy rating, and how is it tested?

Yes, SIHA14N60E-GE3 is avalanche energy rated at E_AS = 136 mJ (single pulse), tested per JEDEC JESD24-1 with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.1 A. This rating confirms ruggedness against inductive switching transients in flyback, LLC, and motor drive applications. The SIHA14N60E-GE3 datasheet explicitly states "Avalanche energy rated (UIS)" as a core feature.

What is the gate-source threshold voltage range for SIHA14N60E-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHA14N60E-GE3 is 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. The SIHA14N60E-GE3 exhibits minimal variation across temperature, supporting stable operation from -55 °C to +150 °C junction.

Can SIHA14N60E-GE3 be used in place of logic-level MOSFETs?

No - SIHA14N60E-GE3 is not a logic-level MOSFET; its V_GS(th) min is 2.0 V and it is optimized for V_GS = 10 V drive. It requires a dedicated gate driver capable of delivering ≥10 V, unlike true logic-level devices (e.g., those with V_GS(th) max = 2.5 V and full enhancement at 4.5 V). Using the SIHA14N60E-GE3 with 3.3 V or 5 V microcontroller outputs will result in incomplete turn-on and excessive R_DS(on).

What is the reverse recovery charge (Q_rr) of the body diode in SIHA14N60E-GE3?

The reverse recovery charge (Q_rr) of the integral body diode in SIHA14N60E-GE3 is 3.4 μC, measured at T_J = 25 °C, I_F = I_S = 7 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is critical for estimating commutation losses in synchronous rectification and half-bridge configurations. The SIHA14N60E-GE3 datasheet specifies Q_rr in the Drain-Source Body Diode Characteristics table on page 2.

SIHA14N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 309mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1205 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA14N60E-GE3 FAQ

1.How can I place an order for SIHA14N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA14N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA14N60E-GE3 reliable?

The price and inventory of SIHA14N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA14N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA14N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA14N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA14N60E-GE3?

SIHA14N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA14N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA14N60E-GE3?

For technical support, including SIHA14N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA14N60E-GE3 requirements.

6.How does Aetrix verify that SIHA14N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA14N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA14N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA14N60E-GE3?

All SIHA14N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA14N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA14N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHA14N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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