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Vishay Siliconix SIHA150N60E-GE3
- Part No.:
- SIHA150N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
SIHA150N60E-GE3.pdf
- Description:
- E SERIES POWER MOSFET THIN-LEAD
- Quantity:
- Payment:
- Shipping:
Inventory:2,000
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Product details
Overview
SIHA150N60E-GE3 from Vishay Siliconix is a 600 V, 9 A (TC = 25 °C), N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring RDS(on) = 0.137 Ω (typ. at VGS = 10 V), Qg = 24 nC (typ.), and avalanche-rated (EAS = 111 mJ). It serves as a high-voltage switching element in PFC and primary-side SMPS stages for telecom and server power supplies.
For engineers reviewing the SIHA150N60E-GE3 datasheet, SIHA150N60E-GE3 pinout, SIHA150N60E-GE3 application, or SIHA150N60E-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), Co(er) = 58 pF, 100 V/ns dv/dt capability, and UIS-rated ruggedness - all critical for high-efficiency, high-reliability hard-switched topologies.
Technical Context
This E-series MOSFET employs 4th-generation superjunction technology optimized for reduced conduction and switching losses in continuous conduction mode (CCM) PFC and 600 V flyback/LLC primary switches. Its gate threshold voltage (VGS(th) = 3.0–5.0 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility.
The device integrates an intrinsic body diode with trr = 291 ns (typ.) and Qrr = 3.5 μC (typ.) at TJ = 25 °C, supporting moderate-frequency synchronous rectification and ZVS-assisted transitions. Thermal resistance RthJC = 3.8 °C/W enables 179 W power dissipation with appropriate heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V AC input PFC stages with 20% margin and withstands 1.2× line transients in telecom rectifiers |
| RDS(on) typ. | 0.137 Ω at VGS = 10 V - delivers ≤1.37 W conduction loss at 10 A DC, enabling compact thermal design |
| Qg max | 36 nC - determines gate driver current requirement (e.g., ≥4 mA avg. for 100 kHz switching with 10 V swing) |
| EAS | 111 mJ - enables unclamped inductive switching survival in boost PFC without external snubbers |
| Coss eff (Co(er)) | 58 pF - reduces turn-off energy loss (Eoff ∝ Coss × VDS²) in high-frequency hard-switched converters |
| tr/tf | 27/17 ns (typ.) - supports >500 kHz operation with controlled EMI and minimal switching overlap loss |
| ID cont. (TC = 100 °C) | 6 A - defines usable current rating under real-world heatsink conditions in enclosed server PSU modules |
Pinout & Package
Thin-Lead TO-220 FULLPAK package: isolated drain tab (D), through-hole mounting, 3.8 °C/W junction-to-case thermal resistance, Pb-free/halogen-free construction per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; requires <1.8 Ω series gate resistor to damp ringing from Lg–Ciss resonance |
| D (Drain) | High-voltage power terminal | Connected to heatsink via isolated tab; carries full load current and absorbs avalanche energy during UIS events |
| S (Source) | Power return and reference node | Serves as local ground for gate driver; layout must minimize source inductance to preserve switching speed and dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg figure-of-merit | 3.9 nC·Ω - directly improves total power loss balance between conduction and switching in 100–300 kHz PFC designs |
| Avalanche energy rating (UIS) | 111 mJ - eliminates need for external clamping in boost inductor fault conditions, reducing BOM count |
| Reduced Co(er) | 58 pF - cuts stored output capacitance energy by ~30% vs. prior-gen 600 V MOSFETs, lowering turn-off loss |
| Body diode Qrr | 3.5 μC (typ.) - enables faster reverse recovery than standard silicon diodes, easing ZVS implementation in LLC |
| dv/dt ruggedness | 100 V/ns - prevents false turn-on during high-slew-rate switching in multi-kW industrial inverters |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
|
Use Scenario: Boost PFC front-end in 1–3 kW redundant AC/DC power supplies for cloud data centers. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: Low RDS(on) minimizes conduction loss at full load; EAS rating ensures reliability during line surge events without snubber redesign. |
Use Scenario: Primary-side switch in 48 V telecom rectifier with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Hard-switched MOSFET in active clamp forward or phase-shifted full-bridge topology. Use Value: 600 V VDS provides margin for 380 VDC bus transients; 100 V/ns dv/dt rating prevents spurious turn-on in noisy telecom environments. |
| Solar PV Inverter DC-DC Stage | Industrial Motor Drive IGBT Gate Driver Stage |
|
Use Scenario: High-voltage DC-DC stage in string inverters converting 600–1000 VDC PV input to 400 VDC bus. IC Role / Device Role / Timing Role: Switching element in two-switch forward or resonant LLC converter operating up to 200 kHz. Use Value: Co(er) = 58 pF reduces switching loss at elevated frequencies; low Qg eases gate driver sizing for high-density PCB layouts. |
Use Scenario: High-side level-shifting switch in isolated gate driver circuits for 600 V IGBTs in HVAC and pump inverters. IC Role / Device Role / Timing Role: Fast-turning auxiliary switch controlling bootstrap capacitor recharge timing in half-bridge drivers. Use Value: 27 ns rise time ensures precise dead-time control; VGS(th) tolerance (3.0–5.0 V) guarantees reliable turn-on across temperature and process variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK60ZFP | RDS(on) = 0.72 Ω (higher), Qg = 34 nC, TO-220FP package (no isolated tab) | Limited to lower-power (<500 W) PFC due to higher conduction loss; requires external heatsink isolation | Choose when cost sensitivity outweighs efficiency targets and board space allows larger thermal solution |
| IXFH12N60P | RDS(on) = 0.55 Ω, Qg = 32 nC, TO-247 package (higher RthJC = 0.5 °C/W but larger copper area) | Better thermal handling at high ambient, but slower tr/tf (45/30 ns) limits high-frequency use | Prefer for industrial motor drives where ruggedness and thermal margin exceed switching speed requirements |
Compared with STP10NK60ZFP and IXFH12N60P, SIHA150N60E-GE3 delivers superior conduction efficiency (0.137 Ω vs. ≥0.55 Ω), lower switching loss via Co(er), and integrated thermal path - making it optimal for space-constrained, high-efficiency 600 V SMPS where both power density and reliability are critical.
Availability
SIHA150N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIHA150N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing infrastructure.
The E Series power MOSFET product line targets high-efficiency switch-mode power conversion, delivering optimized RDS(on) × Qg and rugged avalanche performance for demanding PFC and primary-side applications - precisely the role fulfilled by SIHA150N60E-GE3.
FAQ
What is the maximum continuous drain current rating for SIHA150N60E-GE3 at 100 °C case temperature?
The SIHA150N60E-GE3 has a continuous drain current rating of 6 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects derating from its 9 A rating at 25 °C due to thermal limitations, and must be applied with verified heatsink performance and ambient conditions in final system layout.
Does SIHA150N60E-GE3 support avalanche operation, and what is its rated single-pulse energy?
Yes, SIHA150N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 111 mJ under test conditions of VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, and Rg = 25 Ω. This rating is validated per JEDEC standards and enables robust operation in boost PFC fault scenarios without external protection.
What is the typical gate charge profile of SIHA150N60E-GE3, and how does it impact gate driver selection?
The SIHA150N60E-GE3 has Qg = 24 nC (typ.) and Qgd = 6 nC (typ.) at VGS = 10 V, ID = 10 A, and VDS = 480 V. These values determine peak gate current demand: for 100 ns turn-on, ≥240 mA peak drive is needed. A gate driver capable of ≥500 mA sink/source and low output impedance (e.g., UCC27531) ensures clean, fast transitions without oscillation.
How does the body diode performance of SIHA150N60E-GE3 compare to standard FRDs in PFC applications?
The SIHA150N60E-GE3 body diode exhibits trr = 291 ns (typ.) and Qrr = 3.5 μC (typ.) at TJ = 25 °C, IS = 10 A, and di/dt = 100 A/μs. While slower than dedicated SiC Schottky diodes, its soft recovery and integrated structure eliminate discrete diode placement and parasitic inductance - simplifying layout in interleaved PFC where moderate Qrr is acceptable.
Is SIHA150N60E-GE3 compatible with standard TO-220 footprint layouts, and what are its mechanical mounting constraints?
Yes, SIHA150N60E-GE3 uses the Thin-Lead TO-220 FULLPAK package with standardized 2.54 mm lead pitch and 15.0 mm D dimension, fitting standard TO-220 footprints. Mounting torque for the M3 screw is specified at 0.6 Nm, and soldering peak temperature must not exceed 260 °C for 10 s. The isolated drain tab requires no additional insulation when mounted to grounded heatsinks.
SIHA150N60E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 155mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1514 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 179W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220 Full Pack
SIHA150N60E-GE3 FAQ
1.How can I place an order for SIHA150N60E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHA150N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHA150N60E-GE3 reliable?
The price and inventory of SIHA150N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA150N60E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHA150N60E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA150N60E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHA150N60E-GE3?
SIHA150N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHA150N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHA150N60E-GE3?
For technical support, including SIHA150N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA150N60E-GE3 requirements.
6.How does Aetrix verify that SIHA150N60E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHA150N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA150N60E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHA150N60E-GE3?
All SIHA150N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA150N60E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHA150N60E-GE3 part is unused and in its original packaging.
Return procedure for SIHA150N60E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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