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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA155N60EF-GE3

Name: SIHA155N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHA155N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA155N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA155N60EF-GE3.pdf

Description:: E SERIES POWER MOSFET THIN-LEAD

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Product details

Overview

SIHA155N60EF-GE3 from Vishay Siliconix is a 600 V, 9 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.137 Ω (typ. at V_GS = 10 V), Q_g = 25 nC (typ.), and fast body diode with t_rr = 95 ns (typ.). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA155N60EF-GE3 datasheet, SIHA155N60EF-GE3 pinout, SIHA155N60EF-GE3 application, or SIHA155N60EF-GE3 equivalent, this page provides verified electrical parameters, thermal resistance values (R_thJC = 3.8 °C/W), avalanche energy rating (E_AS = 111 mJ), body diode forward voltage (V_SD = 1.2 V), and validated alternative parts for PFC and hard-switched converter designs.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology optimized for high-voltage, medium-current switching applications. Its low figure-of-merit (R_DS(on) × Q_g) and reduced effective output capacitance (C_o(er) = 61 pF) enable efficient operation in continuous conduction mode (CCM) PFC and resonant LLC topologies up to 100 kHz.

The integrated fast-recovery body diode supports synchronous rectification and ZVS transitions, with confirmed reverse recovery charge Q_rr = 0.5 μC (typ.) and peak reverse recovery current I_RRM = 12 A. The device is rated for unclamped inductive switching (UIS) and operates across -55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing
R_DS(on) typ.	0.137 Ω at V_GS = 10 V - Enables <1.4 W conduction loss at 10 A, reducing heatsink requirements
Q_g typ.	25 nC - Low gate charge allows faster turn-on with moderate gate driver strength (e.g., 1 A peak)
E_AS	111 mJ - Rated for single-pulse avalanche energy, supporting robustness in inductive load switching
t_rr	95 ns typ. - Fast body diode recovery minimizes commutation loss and EMI in bridge configurations
R_thJC	3.8 °C/W - Enables direct mounting to heatsink with predictable thermal performance in TO-220 FULLPAK
V_GS(th)	3.0–5.0 V - Compatible with standard 10 V gate drivers; avoids false turn-on under noise

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead (Pb)-free and halogen-free). Dimensions per Vishay Doc. #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, E = 9.7–10.3 mm, L = 13.4–13.8 mm, ØP = 3.0–3.4 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Internally connected to metal tab - must be electrically isolated and thermally coupled to heatsink
Source (S)	Current return path and reference node	Low-inductance connection critical for gate drive stability and diode recovery control
Gate (G)	Control terminal for channel modulation	High-impedance input requiring low-impedance gate resistor (R_g = 10.1 Ω typical test value)

Key Features

Feature	Design Value
Fast body diode with t_rr ≤ 190 ns	Reduces dead-time loss and voltage overshoot during hard commutation in full-bridge PFC
Low C_o(er) = 61 pF	Minimizes capacitive switching loss and improves efficiency in high-frequency hard-switched converters
Avalanche-rated (E_AS = 111 mJ)	Ensures ruggedness against transient overvoltage without external snubbers in industrial motor drives
R_DS(on) × Q_g FOM = 3.43 Ω·nC	Optimized trade-off between conduction and switching loss for 65–100 kHz PFC operation
TO-220 FULLPAK thin-lead construction	Enables higher power density vs. standard TO-220 via improved thermal interface and reduced lead inductance

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC stage operating at 65–100 kHz with 48 V–54 V output and 200–3000 W power range. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles 9 A RMS drain current. Use Value: Low R_DS(on) and fast body diode reduce total losses by ~12 % vs. legacy 600 V MOSFETs, improving system efficiency to >96 %.	Use Scenario: 48 V intermediate bus converter in telecom rectifier systems with strict thermal constraints. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to ZVS transitions and high dv/dt stress. Use Value: Confirmed dv/dt capability of 100 V/ns and low Crss (1 pF) suppress false triggering and improve ZVS reliability.
Solar PV Inverter DC-DC Stage	Industrial Battery Charger
Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus. IC Role / Device Role / Timing Role: High-side switch in active clamp forward or LLC resonant converter; operates at 100–200 kHz. Use Value: Low Co(tr) = 356 pF enables stable resonance tuning and reduces circulating current loss in LLC tanks.	Use Scenario: Three-phase PFC front-end in 10–30 kW industrial battery chargers with wide input voltage range (380–480 V AC). IC Role / Device Role / Timing Role: Switching element in three-level NPC or T-type PFC; conducts 10 A average current with high thermal cycling. Use Value: R_thJC = 3.8 °C/W and TJ range up to +150 °C support sustained operation under 100 % load with minimal derating.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC stage operating at 65–100 kHz with 48 V–54 V output and 200–3000 W power range.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles 9 A RMS drain current.

Use Value: Low R_DS(on) and fast body diode reduce total losses by ~12 % vs. legacy 600 V MOSFETs, improving system efficiency to >96 %.

Use Scenario: 48 V intermediate bus converter in telecom rectifier systems with strict thermal constraints.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to ZVS transitions and high dv/dt stress.

Use Value: Confirmed dv/dt capability of 100 V/ns and low Crss (1 pF) suppress false triggering and improve ZVS reliability.

Solar PV Inverter DC-DC Stage

Industrial Battery Charger

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or LLC resonant converter; operates at 100–200 kHz.

Use Value: Low Co(tr) = 356 pF enables stable resonance tuning and reduces circulating current loss in LLC tanks.

Use Scenario: Three-phase PFC front-end in 10–30 kW industrial battery chargers with wide input voltage range (380–480 V AC).

IC Role / Device Role / Timing Role: Switching element in three-level NPC or T-type PFC; conducts 10 A average current with high thermal cycling.

Use Value: R_thJC = 3.8 °C/W and TJ range up to +150 °C support sustained operation under 100 % load with minimal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.085 Ω (lower), Q_g = 55 nC (higher), TO-247 package	Higher conduction efficiency but larger layout footprint and slower switching	Prefer when thermal headroom is limited but PCB area permits TO-247; avoid in space-constrained PFC modules
IXTH16N60L2	R_DS(on) = 0.32 Ω (higher), Q_g = 22 nC (lower), TO-247 package	Lower gate drive demand but higher conduction loss; no UIS rating	Select only for low-frequency (<50 kHz), low-current auxiliary supplies where avalanche robustness is not required

Compared with STW48N60M2 and IXTH16N60L2, SIHA155N60EF-GE3 offers optimal balance of low R_DS(on), moderate Q_g, compact TO-220 FULLPAK footprint, and certified UIS capability-making it preferred for high-density, high-reliability 600 V PFC and SMPS designs.

Availability

SIHA155N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHA155N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The EF Series targets high-voltage, medium-current switching applications including PFC, SMPS, and industrial motor drives, with design focus on low FOM, fast body diodes, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for SIHA155N60EF-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA155N60EF-GE3 is 6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its R_thJC = 3.8 °C/W thermal resistance envelope. SIHA155N60EF-GE3 maintains R_DS(on) stability up to +150 °C junction temperature.

Does SIHA155N60EF-GE3 have a fully characterized fast body diode, and what are its key recovery parameters?

Yes, SIHA155N60EF-GE3 features a fully characterized fast body diode with t_rr = 95 ns (typ.), Q_rr = 0.5 μC (typ.), and I_RRM = 12 A (max), measured at T_J = 25 °C, I_F = 10 A, di/dt = 100 A/μs, and V_R = 400 V. These parameters are validated in the datasheet and directly support ZVS implementation and reduced commutation loss in bridge topologies. SIHA155N60EF-GE3 body diode performance is integral to its EF Series designation.

Is SIHA155N60EF-GE3 suitable for unclamped inductive switching (UIS) applications, and what is its rated avalanche energy?

Yes, SIHA155N60EF-GE3 is rated for single-pulse unclamped inductive switching with E_AS = 111 mJ, tested per JEDEC JESD24-11 at V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.8 A. This UIS rating confirms ruggedness in motor drive and relay driving applications where inductive kickback occurs. SIHA155N60EF-GE3 does not require external snubbers for basic inductive load protection.

What is the gate-source threshold voltage range for SIHA155N60EF-GE3, and how does it impact drive circuit design?

The gate-source threshold voltage V_GS(th) for SIHA155N60EF-GE3 is 3.0–5.0 V, measured at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing spurious conduction from noise or leakage. SIHA155N60EF-GE3 requires V_GS ≥ 10 V for full R_DS(on) specification compliance, and its gate leakage remains ≤ ±100 nA at ±20 V.

How does the TO-220 FULLPAK package of SIHA155N60EF-GE3 differ from standard TO-220 in thermal and electrical performance?

The TO-220 FULLPAK package of SIHA155N60EF-GE3 uses thinner leads and an extended copper tab that improves thermal interface to heatsinks, achieving R_thJC = 3.8 °C/W versus ~4.5–5.0 °C/W for standard TO-220. Its reduced lead inductance also lowers switching ringing and EMI. SIHA155N60EF-GE3 pinout matches standard TO-220 (D-S-G), but mechanical dimensions (e.g., d1 = 14.7–15.3 mm) and mounting torque (0.6 Nm for M3 screw) are specific to the FULLPAK variant.

SIHA155N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 89mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1465 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA155N60EF-GE3 FAQ

1.How can I place an order for SIHA155N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA155N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA155N60EF-GE3 reliable?

The price and inventory of SIHA155N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA155N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA155N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA155N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA155N60EF-GE3?

SIHA155N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA155N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA155N60EF-GE3?

For technical support, including SIHA155N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA155N60EF-GE3 requirements.

6.How does Aetrix verify that SIHA155N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA155N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA155N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA155N60EF-GE3?

All SIHA155N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA155N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA155N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHA155N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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