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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA15N50E-E3

Name: SIHA15N50E-E3
Brand: Vishay Siliconix
SKU: SIHA15N50E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA15N50E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA15N50E-E3.pdf

Description:: MOSFET N-CH 500V 14.5A TO220

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Product details

Overview

SIHA15N50E-E3 from Vishay Siliconix is a 500 V, 14.5 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.243 Ω @ V_GS = 10 V, Q_g = 66 nC, and avalanche-rated E_AS = 136 mJ - optimized for hard-switched PFC and flyback converters in ATX power supplies and LED lighting.

For engineers reviewing the SIHA15N50E-E3 datasheet, SIHA15N50E-E3 pinout, SIHA15N50E-E3 application, or SIHA15N50E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced switching losses, 70 V/ns dV/dt capability, and integrated body diode with t_rr = 265 ns - critical for high-efficiency SMPS design and thermal reliability under repetitive UIS stress.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and drift region doping to achieve balanced conduction and switching performance. Its 500 V V_DS rating supports operation across universal AC input ranges (85–265 V_AC) in boost PFC stages, while the 3.8 °C/W R_thJC enables stable 14.5 A continuous drain current at T_C = 25 °C.

The device integrates a fast-recovery body diode (Q_rr = 3.2 μC, I_RRM = 23 A) and is characterized for unclamped inductive switching (UIS) up to 136 mJ per pulse. Gate drive requirements are defined by Q_gs = 8 nC and Q_gd = 14 nC, supporting efficient 10 V gate control in standard PWM controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients in PFC and offline SMPS
R_DS(on) max @ 10 V	0.243 Ω - enables ≤ 2.7 W conduction loss at 7.5 A, reducing heatsink requirements
Q_g max	66 nC - determines gate driver current demand; compatible with common 1-A peak drivers
E_AS single-pulse	136 mJ - ensures robustness against inductive turn-off energy without external snubbers
t_r/t_f	24/18 ns typical - supports >500 kHz switching in resonant and hard-switched topologies
C_iss	1162 pF - impacts gate drive loop stability and Miller effect in high-side configurations
T_J range	−55 to +150 °C - qualified for industrial and computing environments with full derating

Pinout & Package

SIHA15N50E-E3 uses the Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with drain-connected tab for direct heatsinking and 3.8 °C/W junction-to-case thermal resistance. The package features 1.0–2.8 mm lead length (L1), 8.3–8.7 mm width (D), and 14.7–15.3 mm height (d1), optimized for automated insertion and thermal interface reliability.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heatsink interface	Electrically connected to metal tab; requires insulated mounting or grounded heatsink per safety standards
Source	Reference node for gate drive and current sensing	Low-inductance connection essential for accurate current-mode control and minimizing shoot-through risk
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage handling; sensitive to ESD and ringing above ±30 V rating

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	16.1 Ω·nC - reduces total power loss in both conduction and switching phases of high-frequency operation
Avalanche energy rating (E_AS)	136 mJ - eliminates need for external clamping circuits in inductive load switching
Fast body diode recovery	t_rr = 265 ns, Q_rr = 3.2 μC - minimizes reverse recovery losses and EMI in synchronous rectification and flyback freewheeling
High dV/dt immunity	70 V/ns - prevents false turn-on during high-slew-rate switching transitions in half-bridge configurations
Lead (Pb)-free and halogen-free	E3 suffix indicates RoHS-compliant termination and JEDEC-standard green packaging

Applications

PC ATX Power Supply	Two-Stage LED Driver
Use Scenario: Primary-side switch in active clamp forward or two-switch forward converter delivering 300–500 W with universal AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 100–200 kHz with zero-voltage switching assist. Use Value: Low Q_g and C_iss reduce gate drive loss and improve light-load efficiency; 500 V rating accommodates reflected voltage spikes in clamp circuits.	Use Scenario: Boost PFC stage followed by LLC resonant DC-DC stage in commercial LED streetlight drivers (150–300 W). IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) PFC switch regulating input current waveform to match sinusoidal line voltage. Use Value: R_DS(on) = 0.243 Ω limits conduction loss below 3 W at full load; avalanche rating handles line surge events without failure.
Hard-Switched Flyback	Industrial SMPS
Use Scenario: Primary switch in isolated flyback converter powering auxiliary rails (5 V, 12 V) in telecom base station power modules. IC Role / Device Role / Timing Role: Main energy storage switch turning on during line voltage peaks and off during transformer reset phase. Use Value: Fast t_r/t_f (24/18 ns) enables tight duty cycle control; low C_oss (51 pF) reduces capacitive switching loss at 65 kHz.	Use Scenario: Main switch in 200 W industrial DIN-rail power supply operating continuously at 60 °C ambient with 150 °C max junction temperature. IC Role / Device Role / Timing Role: High-reliability power switch in enclosed, convection-cooled enclosure where thermal margin is constrained. Use Value: R_thJC = 3.8 °C/W allows direct heatsink mounting; −55 to +150 °C T_J range ensures long-term parametric stability over lifetime.

PC ATX Power Supply

Two-Stage LED Driver

Use Scenario: Primary-side switch in active clamp forward or two-switch forward converter delivering 300–500 W with universal AC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 100–200 kHz with zero-voltage switching assist.

Use Value: Low Q_g and C_iss reduce gate drive loss and improve light-load efficiency; 500 V rating accommodates reflected voltage spikes in clamp circuits.

Use Scenario: Boost PFC stage followed by LLC resonant DC-DC stage in commercial LED streetlight drivers (150–300 W).

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) PFC switch regulating input current waveform to match sinusoidal line voltage.

Use Value: R_DS(on) = 0.243 Ω limits conduction loss below 3 W at full load; avalanche rating handles line surge events without failure.

Hard-Switched Flyback

Industrial SMPS

Use Scenario: Primary switch in isolated flyback converter powering auxiliary rails (5 V, 12 V) in telecom base station power modules.

IC Role / Device Role / Timing Role: Main energy storage switch turning on during line voltage peaks and off during transformer reset phase.

Use Value: Fast t_r/t_f (24/18 ns) enables tight duty cycle control; low C_oss (51 pF) reduces capacitive switching loss at 65 kHz.

Use Scenario: Main switch in 200 W industrial DIN-rail power supply operating continuously at 60 °C ambient with 150 °C max junction temperature.

IC Role / Device Role / Timing Role: High-reliability power switch in enclosed, convection-cooled enclosure where thermal margin is constrained.

Use Value: R_thJC = 3.8 °C/W allows direct heatsink mounting; −55 to +150 °C T_J range ensures long-term parametric stability over lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50ZFP	500 V, 14 A, R_DS(on) = 0.32 Ω, Q_g = 45 nC, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g eases gate drive but lacks E_AS rating	Prefer when gate drive current is limited and avalanche stress is absent
IXTH12N50L	500 V, 12 A, R_DS(on) = 0.39 Ω, Q_g = 32 nC, TO-247 package	Lower current rating and higher R_DS(on); superior R_thJC (0.83 °C/W) but larger footprint	Choose for higher thermal headroom in open-frame designs where board space permits

Compared with STP14NK50ZFP and IXTH12N50L, SIHA15N50E-E3 delivers the lowest R_DS(on) × Q_g FOM among TO-220 variants, enabling higher efficiency in compact, cost-sensitive SMPS where both conduction and switching losses must be minimized without sacrificing ruggedness.

Availability

SIHA15N50E-E3 is available at Aetrix Electronics and suitable for PC ATX power supplies, LED lighting drivers, and industrial switch-mode power supplies requiring stable component supply, RoHS compliance, and proven avalanche ruggedness.

Supply support for SIHA15N50E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHA15N50E-E3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, medium-current hard-switched applications including PFC, flyback, and forward converters where low FOM and UIS robustness are critical.

FAQ

What is the maximum continuous drain current rating for SIHA15N50E-E3 at 100 °C case temperature?

The SIHA15N50E-E3 supports 9.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 3.8 °C/W R_thJC limit. At T_C = 25 °C, the rating rises to 14.5 A.

Does SIHA15N50E-E3 have an avalanche energy rating, and what is its value?

Yes, SIHA15N50E-E3 is rated for single-pulse avalanche energy (E_AS) of 136 mJ under test conditions of V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.1 A. This rating confirms its ability to withstand inductive turn-off stress without failure - a key reliability feature for hard-switched topologies like PFC and flyback.

What is the gate threshold voltage range for SIHA15N50E-E3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHA15N50E-E3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This standard-level threshold requires ≥10 V gate drive for full enhancement, ensuring low R_DS(on) and compatibility with conventional PWM controllers - unlike logic-level MOSFETs that operate fully at 4.5–5 V.

How does the body diode performance of SIHA15N50E-E3 compare to standard rectifiers in flyback applications?

The SIHA15N50E-E3 body diode exhibits t_rr = 265 ns and Q_rr = 3.2 μC at T_J = 25 °C, IS = 7.5 A, and dI/dt = 100 A/μs. While not as fast as dedicated ultrafast diodes, this performance is sufficient for flyback freewheeling at ≤200 kHz, reducing reverse recovery loss versus general-purpose diodes and avoiding external snubbers in many designs.

Is SIHA15N50E-E3 suitable for use in surface-mount assembly processes?

No, SIHA15N50E-E3 uses the through-hole Thin-Lead TO-220 FULLPAK package with a metal tab designed for mechanical screw mounting and thermal interface to heatsinks. It is not compatible with reflow or wave soldering for SMT lines. For surface-mount alternatives, consider Vishay's SiHF series in PowerPAK SO-8 or similar packages.

SIHA15N50E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1162 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA15N50E-E3 FAQ

1.How can I place an order for SIHA15N50E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA15N50E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA15N50E-E3 reliable?

The price and inventory of SIHA15N50E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA15N50E-E3 is usually 5 days.

3.What payment methods are accepted for SIHA15N50E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA15N50E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA15N50E-E3?

SIHA15N50E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA15N50E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA15N50E-E3?

For technical support, including SIHA15N50E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA15N50E-E3 requirements.

6.How does Aetrix verify that SIHA15N50E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA15N50E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA15N50E-E3 meets industry standards.

7.What is the process for return or replacement of SIHA15N50E-E3?

All SIHA15N50E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA15N50E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA15N50E-E3 part is unused and in its original packaging.

Return procedure for SIHA15N50E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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