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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA15N50E-GE3

Name: SIHA15N50E-GE3
Brand: Vishay Siliconix
SKU: SIHA15N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA15N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA15N50E-GE3.pdf

Description:: N-CHANNEL 500V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA15N50E-GE3 from Vishay Siliconix is a 500 V, 14.5 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.243 Ω at V_GS = 10 V, Q_g = 33 nC (typ), and avalanche-rated E_AS = 136 mJ - optimized for hard-switched PFC and flyback converters in ATX power supplies and LED lighting.

For engineers reviewing the SIHA15N50E-GE3 datasheet, SIHA15N50E-GE3 pinout, SIHA15N50E-GE3 application, or SIHA15N50E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), 70 V/ns dV/dt capability, body diode t_rr = 265 ns, and thermal resistance R_thJC = 3.8 °C/W - critical for high-efficiency, thermally constrained SMPS designs.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate oxide and trench-assisted charge balancing to achieve low conduction loss while maintaining robust switching performance. Its 500 V V_DS rating supports universal-input offline applications up to 400 V DC bus, and the integral body diode is rated for 14.5 A continuous source current with V_SD = 1.2 V at 7.5 A.

The device operates with V_GS(th) = 2.0–4.0 V and exhibits positive temperature coefficient for R_DS(on), enabling stable parallel operation. Its C_iss = 1162 pF and C_oss = 51 pF support fast turn-on/turn-off with minimal Miller effect, validated under V_DS = 400 V, I_D = 12 A, R_g = 9.1 Ω test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus in universal-input PFC and flyback topologies without derating
R_DS(on) max @ 10 V	0.280 Ω - limits conduction loss to ≤ 3.1 W at 7.5 A, enabling compact heatsinking
Q_g typ	33 nC - reduces gate drive power and enables use with low-current drivers (e.g., UC384x family)
E_AS	136 mJ - withstands unclamped inductive switching events in two-switch forward and PFC circuits
t_r/t_f	24/18 ns (typ) - supports >200 kHz switching in hard-switched SMPS with low switching loss
R_thJC	3.8 °C/W - allows 27.5 W dissipation at ΔT = 105 °C (T_J = 150 °C, T_C = 45 °C)
V_SD	1.2 V @ 7.5 A - minimizes reverse recovery loss in synchronous rectification and freewheeling paths

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free and halogen-free); dimensions per Vishay Doc #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, E = 9.7–10.3 mm; mounting torque: 0.6 N·m (M3 screw).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground
Source (S)	Power return and gate reference node	Low-inductance connection critical for minimizing switching noise and dV/dt-induced false turn-on
Gate (G)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD - requires gate resistor (9.1 Ω typical) and clamping

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	8.4 Ω·nC (0.243 Ω × 33 nC) - improves efficiency trade-off between conduction and switching loss in 100–300 kHz SMPS
Avalanche energy rating (E_AS)	136 mJ - eliminates need for external snubbers in inductive load switching and PFC boost stages
Body diode t_rr and Q_rr	265 ns / 3.2 μC - reduces cross-conduction loss and EMI in quasi-resonant and LLC secondary-side rectification
dV/dt immunity	70 V/ns - prevents spurious turn-on during high-slew-rate transitions in high-frequency PFC and flyback controllers
Thermal performance (R_thJC)	3.8 °C/W - enables 33 W continuous dissipation with modest heatsinking, supporting high-power-density 150–250 W adapters

Applications

ATX Power Supply PFC Stage	Two-Stage LED Driver
Use Scenario: Boost converter operating at 65–100 kHz in 300–500 W PC silver box power supplies with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) PFC controller (e.g., UCC28070), handling peak currents up to 12 A. Use Value: Low Q_g and R_DS(on) reduce total losses by ≥1.2 W vs. legacy 550 V MOSFETs, improving 230 VAC efficiency to >95% at full load.	Use Scenario: Primary-side switch in flyback-based constant-current LED driver for commercial downlights (24–48 V, 1–3 A output). IC Role / Device Role / Timing Role: Hard-switched main transistor driven by VIPer22A or similar controller, operating at 60–130 kHz with 50% duty cycle. Use Value: 136 mJ E_AS rating tolerates transformer leakage inductance spikes without failure, eliminating need for TVS clamping.
Industrial SMPS Auxiliary Supply	Two-Switch Forward Converter
Use Scenario: 12 V/2 A auxiliary bias supply in PLC power modules, fed from 400 V DC bus with tight space constraints. IC Role / Device Role / Timing Role: Primary switch in self-oscillating or fixed-frequency flyback topology, operating at 120 kHz with 30% duty cycle. Use Value: R_thJC = 3.8 °C/W enables full-load operation without forced air, reducing BOM cost and board area vs. SMD alternatives.	Use Scenario: High-side switch in 300–600 W telecom rectifier using two-switch forward topology with 100 kHz switching. IC Role / Device Role / Timing Role: One of two synchronized N-channel switches sharing voltage stress across input capacitors; clamped by reset winding. Use Value: 500 V rating and 70 V/ns dV/dt immunity ensure reliable commutation during reset phase without shoot-through risk.

ATX Power Supply PFC Stage

Two-Stage LED Driver

Use Scenario: Boost converter operating at 65–100 kHz in 300–500 W PC silver box power supplies with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) PFC controller (e.g., UCC28070), handling peak currents up to 12 A.

Use Value: Low Q_g and R_DS(on) reduce total losses by ≥1.2 W vs. legacy 550 V MOSFETs, improving 230 VAC efficiency to >95% at full load.

Use Scenario: Primary-side switch in flyback-based constant-current LED driver for commercial downlights (24–48 V, 1–3 A output).

IC Role / Device Role / Timing Role: Hard-switched main transistor driven by VIPer22A or similar controller, operating at 60–130 kHz with 50% duty cycle.

Use Value: 136 mJ E_AS rating tolerates transformer leakage inductance spikes without failure, eliminating need for TVS clamping.

Industrial SMPS Auxiliary Supply

Two-Switch Forward Converter

Use Scenario: 12 V/2 A auxiliary bias supply in PLC power modules, fed from 400 V DC bus with tight space constraints.

IC Role / Device Role / Timing Role: Primary switch in self-oscillating or fixed-frequency flyback topology, operating at 120 kHz with 30% duty cycle.

Use Value: R_thJC = 3.8 °C/W enables full-load operation without forced air, reducing BOM cost and board area vs. SMD alternatives.

Use Scenario: High-side switch in 300–600 W telecom rectifier using two-switch forward topology with 100 kHz switching.

IC Role / Device Role / Timing Role: One of two synchronized N-channel switches sharing voltage stress across input capacitors; clamped by reset winding.

Use Value: 500 V rating and 70 V/ns dV/dt immunity ensure reliable commutation during reset phase without shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50ZFP	500 V, 14 A, R_DS(on) = 0.38 Ω, Q_g = 45 nC, TO-220FP package (shorter leads, no FULLPAK thermal pad)	Higher R_DS(on) increases conduction loss by ~0.5 W at 7.5 A; lacks FULLPAK's low R_thJC	Acceptable where thermal margin exists and cost sensitivity outweighs efficiency gain
IXFH12N50P	500 V, 12 A, R_DS(on) = 0.32 Ω, Q_g = 36 nC, TO-247 package (larger footprint, higher R_thJC = 0.5 °C/W)	Lower current rating and larger package increase board area; superior R_thJC only beneficial with external heatsink	Suitable when higher ruggedness (100% UIS tested) is prioritized over size and efficiency

Compared with STP14NK50ZFP and IXFH12N50P, SIHA15N50E-GE3 delivers the lowest R_DS(on) × Q_g product in TO-220 form factor, enabling highest power density in thermally constrained 100–200 W SMPS without sacrificing avalanche ruggedness or dV/dt immunity.

Availability

SIHA15N50E-GE3 is available at Aetrix Electronics and suitable for computing power supplies, LED lighting drivers, and industrial SMPS requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SIHA15N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHA15N50E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, hard-switched offline power conversion in computing, lighting, and consumer electronics.

FAQ

What is the maximum continuous drain current for SIHA15N50E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA15N50E-GE3 is 9.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 14.5 A rating at 25 °C, based on a linear derating factor of 1.25 W/°C and R_thJC = 3.8 °C/W. Designers must verify junction temperature rise using actual PCB layout and heatsink conditions before finalizing the SIHA15N50E-GE3 current rating.

Does SIHA15N50E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHA15N50E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 136 mJ, tested per JEDEC JESD24-11 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.1 A. The test starts at T_J = 25 °C and ensures no parametric degradation after stress. This ruggedness makes SIHA15N50E-GE3 suitable for PFC and forward converters where inductive energy must be safely absorbed without external clamping.

What is the gate threshold voltage range for SIHA15N50E-GE3, and why does it matter for drive circuit design?

The gate threshold voltage (V_GS(th)) for SIHA15N50E-GE3 is 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage. Designers must maintain V_GS ≥ 10 V for full R_DS(on) specification; lower voltages increase conduction loss disproportionately due to the MOSFET's transconductance curve.

How does the body diode performance of SIHA15N50E-GE3 compare to standard FRDs in flyback applications?

The SIHA15N50E-GE3 body diode has t_rr = 265 ns and Q_rr = 3.2 μC at T_J = 25 °C, IS = 7.5 A, and dI/dt = 100 A/μs - significantly faster than standard 500 V FRDs (typically >500 ns). This reduces reverse recovery loss and EMI in flyback snubberless designs. However, its V_SD = 1.2 V is higher than Schottky diodes, so it is best applied where switching speed matters more than forward drop, such as in primary-side clamp or synchronous rectification with external control.

Is SIHA15N50E-GE3 compatible with lead-free reflow soldering, and what is the peak temperature limit?

Yes, SIHA15N50E-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Soldering Recommendations section. The device uses matte tin-plated leads and meets IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. Proper pre-bake and profile adherence are required to avoid internal delamination or bond wire damage during assembly.

SIHA15N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1162 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA15N50E-GE3 FAQ

1.How can I place an order for SIHA15N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA15N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA15N50E-GE3 reliable?

The price and inventory of SIHA15N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA15N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA15N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA15N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA15N50E-GE3?

SIHA15N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA15N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA15N50E-GE3?

For technical support, including SIHA15N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA15N50E-GE3 requirements.

6.How does Aetrix verify that SIHA15N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA15N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA15N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA15N50E-GE3?

All SIHA15N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA15N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA15N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHA15N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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