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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA15N60E-E3

Name: SIHA15N60E-E3
Brand: Vishay Siliconix
SKU: SIHA15N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA15N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA15N60E-E3.pdf

Description:: MOSFET N-CH 600V 15A TO220

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Product details

Overview

SIHA15N60E-E3 from Vishay Siliconix is a 600 V, 15 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 76 nC (max), and avalanche-rated E_AS = 102 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHA15N60E-E3 datasheet, SIHA15N60E-E3 pinout, SIHA15N60E-E3 application, or SIHA15N60E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, 70 V/ns dV/dt immunity, and integrated body diode with 410 ns t_rr - critical for hard-switched and resonant topologies.

Technical Context

This device employs planar VDMOS technology with optimized charge balance for reduced switching losses and stable operation under repetitive unclamped inductive switching (UIS). Its gate threshold voltage (2–4 V) ensures robust noise immunity while enabling direct drive from standard 10 V gate drivers.

The MOSFET integrates a fast-recovery body diode (t_rr = 410 ns, Q_rr = 5.4 μC) and exhibits low C_iss (1350 pF typ) and C_oss (70 pF typ), supporting high-frequency operation up to 200 kHz in continuous conduction mode PFC and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input PFC and 380 V DC bus designs with 20 % margin
R_DS(on) max	0.28 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.8 W conduction loss at 8 A RMS in 100 kHz SMPS
Q_g max	76 nC - reduces gate driver power demand and enables use of low-cost 1-A peak drivers
E_AS	102 mJ - withstands single-pulse inductive energy without failure in flyback or forward converters
t_rr	410 ns - minimizes diode reverse recovery loss and associated voltage overshoot in bridge-leg commutation
R_thJC	3.7 °C/W - allows 34 W dissipation with ≤ 50 °C case-to-ambient rise using standard heatsink mounting
dV/dt rating	70 V/ns - prevents false turn-on during high-slew-rate switching transients in half-bridge configurations

Pinout & Package

Thin-Lead TO-220 FULLPAK package: isolated drain tab, 3-pin through-hole outline (D–G–S), 13.6 mm height, 8.5 mm width, 10.0 mm depth; designed for high thermal conductivity and mechanical robustness in industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab - must be electrically isolated from heatsink unless system ground referenced
Gate	Control terminal for channel modulation	Low-input-capacitance node (C_iss = 1350 pF); requires <10 Ω series resistance to damp ringing in high-dV/dt environments
Source	Reference node for gate drive and current sensing	Common return path for load current and gate driver return; layout must minimize inductance to avoid shoot-through risk

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	21.3 Ω·nC - directly reduces total switching + conduction loss in 65–200 kHz PFC and DC/DC stages
Avalanche energy rated (UIS)	102 mJ - eliminates need for external snubbers in inductive load switching applications
Ultra-low gate charge (Q_g)	76 nC max - cuts gate drive power by >40 % vs. legacy 600 V MOSFETs with comparable R_DS(on)
Fast body diode recovery	t_rr = 410 ns, Q_rr = 5.4 μC - reduces cross-conduction loss and EMI in synchronous rectification and half-bridge topologies
High dV/dt immunity	70 V/ns - maintains reliable blocking during rapid voltage transients without spurious turn-on

Applications

Server ATX Power Supply	PFC Stage in LED Driver
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1200 W ATX units operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC controller stage. Use Value: Enables >96 % efficiency at full load via low R_DS(on) and minimized Q_g-driven switching loss, reducing thermal stress on primary heatsink.	Use Scenario: Boost PFC switch in outdoor-rated 300 W LED streetlight driver with universal AC input (90–305 VAC). IC Role / Device Role / Timing Role: Main switching element in interleaved dual-phase PFC front-end. Use Value: Avalanche rating and 410 ns t_rr prevent failure during line surges and reduce diode-related losses in high-temperature ambient (>65 °C).
HID Lamp Ballast	Industrial UPS Inverter Stage
Use Scenario: Half-bridge switching in 250 W electronic HID ballast for stadium lighting. IC Role / Device Role / Timing Role: Low-side switch handling 15 A pulsed drain current at 50–100 kHz. Use Value: 39 A pulsed current rating and 70 V/ns dV/dt immunity ensure reliable commutation during lamp ignition transients.	Use Scenario: Output H-bridge switch in 5 kVA online UPS inverter operating at 16 kHz PWM. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in DC-link to AC output stage. Use Value: 600 V V_DS and 3.7 °C/W R_thJC support 100 % load duty cycle with forced-air cooling, eliminating need for derating.

Server ATX Power Supply

PFC Stage in LED Driver

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1200 W ATX units operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC controller stage.

Use Value: Enables >96 % efficiency at full load via low R_DS(on) and minimized Q_g-driven switching loss, reducing thermal stress on primary heatsink.

Use Scenario: Boost PFC switch in outdoor-rated 300 W LED streetlight driver with universal AC input (90–305 VAC).

IC Role / Device Role / Timing Role: Main switching element in interleaved dual-phase PFC front-end.

Use Value: Avalanche rating and 410 ns t_rr prevent failure during line surges and reduce diode-related losses in high-temperature ambient (>65 °C).

HID Lamp Ballast

Industrial UPS Inverter Stage

Use Scenario: Half-bridge switching in 250 W electronic HID ballast for stadium lighting.

IC Role / Device Role / Timing Role: Low-side switch handling 15 A pulsed drain current at 50–100 kHz.

Use Value: 39 A pulsed current rating and 70 V/ns dV/dt immunity ensure reliable commutation during lamp ignition transients.

Use Scenario: Output H-bridge switch in 5 kVA online UPS inverter operating at 16 kHz PWM.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in DC-link to AC output stage.

Use Value: 600 V V_DS and 3.7 °C/W R_thJC support 100 % load duty cycle with forced-air cooling, eliminating need for derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N60DM6	R_DS(on) = 0.27 Ω, Q_g = 65 nC, TO-220FP package, no UIS rating	Lacks avalanche energy specification; requires external clamping in inductive loads	Prefer SIHA15N60E-E3 where unclamped inductive switching occurs regularly
IPP60R190C7	650 V, R_DS(on) = 0.19 Ω, Q_g = 42 nC, Superjunction CoolMOS™, TO-220	Lower R_DS(on) but higher cost; optimized for >250 kHz operation	Choose SIHA15N60E-E3 for cost-sensitive 100–200 kHz PFC where 0.28 Ω R_DS(on) meets thermal targets

Compared with STP15N60DM6 and IPP60R190C7, SIHA15N60E-E3 delivers balanced performance across conduction loss, switching loss, ruggedness, and price - making it optimal for mainstream industrial and lighting PFC designs requiring proven UIS capability and thermal reliability at 100–200 kHz.

Availability

SIHA15N60E-E3 is available at Aetrix Electronics and suitable for switch-mode power supplies, power factor correction circuits, and industrial lighting ballasts requiring stable component supply and long-term production continuity.

Supply support for SIHA15N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive systems.

The E Series Power MOSFET product line targets high-efficiency, high-ruggedness AC/DC and DC/DC conversion - engineered for low FOM, fast switching, and robust avalanche performance in demanding power infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIHA15N60E-E3 at 100 °C case temperature?

The SIHA15N60E-E3 supports 9.6 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derated value reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink sizing to maintain T_C ≤ 100 °C under full-load conditions for the SIHA15N60E-E3.

Does SIHA15N60E-E3 have a specified avalanche energy rating, and how is it tested?

Yes, the SIHA15N60E-E3 is rated for 102 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 50 V, L = 11.6 mH, R_g = 25 Ω, and I_AS = 4.2 A, starting from T_J = 25 °C. This rating is validated per JEDEC JESD24-1 and confirms the device's ability to absorb inductive energy without failure - a key differentiator for reliability in flyback, forward, and PFC applications where voltage spikes occur.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA15N60E-E3, and why does it matter?

The SIHA15N60E-E3 body diode has a typical reverse recovery time (t_rr) of 410 ns at T_J = 25 °C, I_F = 8 A, dI/dt = 100 A/μs, and V_R = 20 V. This fast recovery minimizes reverse recovery current (I_RRM = 21 A) and associated switching losses in half-bridge and synchronous rectifier topologies - directly improving efficiency and reducing EMI generation in the SIHA15N60E-E3-based design.

Can SIHA15N60E-E3 be driven directly by a microcontroller GPIO pin?

No - the SIHA15N60E-E3 requires a dedicated gate driver due to its 76 nC total gate charge and 1350 pF input capacitance. A typical 5 V/20 mA GPIO cannot supply sufficient peak current to charge/discharge the gate within required switching times. Driving the SIHA15N60E-E3 directly risks slow transitions, excessive heating, and shoot-through. Use a logic-level gate driver (e.g., IR2110, UCC27531) with ≥1 A peak output to ensure robust switching of the SIHA15N60E-E3.

What is the gate-source threshold voltage range for SIHA15N60E-E3, and how does it affect drive requirements?

The SIHA15N60E-E3 has a gate-source threshold voltage (V_GS(th)) range of 2–4 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drive while providing noise margin against false triggering. However, full enhancement (to achieve R_DS(on) ≤ 0.28 Ω) requires V_GS ≥ 10 V - so the SIHA15N60E-E3 must be driven with a well-regulated 10–15 V supply, not logic-level (3.3 V or 5 V) sources.

SIHA15N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA15N60E-E3 FAQ

1.How can I place an order for SIHA15N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA15N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA15N60E-E3 reliable?

The price and inventory of SIHA15N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA15N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHA15N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA15N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA15N60E-E3?

SIHA15N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA15N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA15N60E-E3?

For technical support, including SIHA15N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA15N60E-E3 requirements.

6.How does Aetrix verify that SIHA15N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA15N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA15N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHA15N60E-E3?

All SIHA15N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA15N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA15N60E-E3 part is unused and in its original packaging.

Return procedure for SIHA15N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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