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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA15N60E-GE3

Name: SIHA15N60E-GE3
Brand: Vishay Siliconix
SKU: SIHA15N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA15N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA15N60E-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA15N60E-GE3 from Vishay Siliconix is a 600 V, 15 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 76 nC (max), and avalanche-rated E_AS = 102 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHA15N60E-GE3 datasheet, SIHA15N60E-GE3 pinout, SIHA15N60E-GE3 application, or SIHA15N60E-GE3 equivalent, this device is selected for its low gate charge, reduced switching losses, and robust unclamped inductive switching capability in 480 V DC bus designs.

Technical Context

This MOSFET employs planar VDMOS technology with optimized cell layout to achieve low figure-of-merit (R_DS(on) × Q_g = 21.3 Ω·nC typ), enabling high-frequency operation up to 100 kHz in hard-switched topologies. Its integral body diode exhibits t_rr = 410 ns and Q_rr = 5.4 μC at 25 °C, supporting moderate-speed recovery in continuous conduction mode PFC.

The device operates with V_GS(th) = 2–4 V, ensuring reliable turn-on with standard 10 V gate drivers, and maintains stable R_DS(on) up to T_J = 150 °C (normalized to 2.5× at 150 °C). Thermal resistance R_thJC = 3.7 °C/W enables 34 W power dissipation at T_C = 25 °C with minimal heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 480 V DC bus designs with 20 % margin for voltage spikes in industrial SMPS and PFC
R_DS(on) max @ 10 V	0.28 Ω - limits conduction loss to ≤ 6.4 W at 15 A continuous drain current
Q_g max	76 nC - reduces gate drive power requirement and enables use of low-current 10 V gate drivers
E_AS	102 mJ - withstands single-pulse unclamped inductive energy without failure in flyback or boost converters
t_r/t_f	51/33 ns typ - supports fast switching with minimized overlap loss in hard-switched topologies
T_J range	−55 to +150 °C - qualified for industrial ambient environments and enclosed power supply enclosures
C_iss	1350 pF typ - lowers capacitive loading on gate driver, reducing required peak current

Pinout & Package

SIHA15N60E-GE3 is housed in a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with drain-connected tab for direct heatsink mounting and improved thermal performance (R_thJC = 3.7 °C/W). The package features shortened leads for reduced parasitic inductance in high-di/dt applications.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal; input capacitance C_iss = 1350 pF requires ≥ 1 A peak drive for <34 ns td(on)
D (Drain)	High-side power output	Connected to internal die backside and metal tab; electrically tied to heatsink - must be isolated if heatsink is grounded
S (Source)	Power return / reference node	Serves as common reference for gate drive and current sensing; low-inductance Kelvin source not provided

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	21.3 Ω·nC typ - directly improves efficiency in 65–100 kHz SMPS by reducing combined switching + conduction loss
Avalanche energy rating	E_AS = 102 mJ - eliminates need for external snubbers in boost PFC and flyback primary switches under transient overloads
Ultra-low Q_gd/Q_g ratio	22 % (17/76 nC) - minimizes Miller plateau duration, improving immunity to dv/dt-induced false turn-on
Body diode softness factor	Q_rr/I_RRM = 0.26 μC/A - reduces voltage overshoot and EMI during diode commutation in bridge-leg configurations
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for consumer electronics and computing power supplies

Applications

Industrial Switch-Mode Power Supplies	Active PFC Front-Ends
Use Scenario: 1 kW open-frame AC/DC power supply operating at 70 kHz with universal input (90–264 VAC). IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) boost converter stage. Use Value: Low Q_g and 0.28 Ω R_DS(on) enable >94 % efficiency at full load while maintaining thermal rise <45 °C on 50 cm² heatsink.	Use Scenario: 350 W server ATX power supply with active PFC pre-regulator. IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC with 100 kHz switching frequency. Use Value: 102 mJ E_AS rating prevents failure during line surge events; 410 ns t_rr avoids excessive diode reverse recovery loss.
HID Lamp Ballasts	LED Driver Power Stages
Use Scenario: 250 W electronic ballast for metal halide lamps with resonant ignition and constant-power regulation. IC Role / Device Role / Timing Role: Half-bridge upper switch handling 300 V DC link and 10 A peak load current. Use Value: Robust dV/dt immunity (70 V/ns) suppresses false triggering during lamp ignition transients; TO-220 FULLPAK tab ensures stable thermal interface.	Use Scenario: 150 W constant-current LED driver for street lighting with 400 V DC bus and dimming control. IC Role / Device Role / Timing Role: Primary switch in flyback topology operating in quasi-resonant mode. Use Value: Low C_oss (70 pF) and Co(tr) = 177 pF reduce dead-time losses; 600 V rating accommodates 380 VAC + 20 % surge tolerance.

Industrial Switch-Mode Power Supplies

Active PFC Front-Ends

Use Scenario: 1 kW open-frame AC/DC power supply operating at 70 kHz with universal input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) boost converter stage.

Use Value: Low Q_g and 0.28 Ω R_DS(on) enable >94 % efficiency at full load while maintaining thermal rise <45 °C on 50 cm² heatsink.

Use Scenario: 350 W server ATX power supply with active PFC pre-regulator.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC with 100 kHz switching frequency.

Use Value: 102 mJ E_AS rating prevents failure during line surge events; 410 ns t_rr avoids excessive diode reverse recovery loss.

HID Lamp Ballasts

LED Driver Power Stages

Use Scenario: 250 W electronic ballast for metal halide lamps with resonant ignition and constant-power regulation.

IC Role / Device Role / Timing Role: Half-bridge upper switch handling 300 V DC link and 10 A peak load current.

Use Value: Robust dV/dt immunity (70 V/ns) suppresses false triggering during lamp ignition transients; TO-220 FULLPAK tab ensures stable thermal interface.

Use Scenario: 150 W constant-current LED driver for street lighting with 400 V DC bus and dimming control.

IC Role / Device Role / Timing Role: Primary switch in flyback topology operating in quasi-resonant mode.

Use Value: Low C_oss (70 pF) and Co(tr) = 177 pF reduce dead-time losses; 600 V rating accommodates 380 VAC + 20 % surge tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N60DM6	R_DS(on) = 0.27 Ω, Q_g = 62 nC, same 600 V rating, DPAK package (smaller footprint, higher R_thJA)	Limited to ≤ 10 A continuous due to thermal constraints; unsuitable for high-power PFC without forced air	Select when board space is critical and power level ≤ 300 W; verify PCB copper area for thermal management.
IXTH15N60L2	R_DS(on) = 0.30 Ω, Q_g = 45 nC, TO-247 package, lower C_iss (1100 pF), no E_AS rating specified	Requires external avalanche protection circuitry; better suited for ZVS topologies than hard-switched PFC	Prefer for resonant LLC or phase-shifted full-bridge where low Q_g dominates; avoid in unclamped inductive loads.

Compared with STP15N60DM6 and IXTH15N60L2, SIHA15N60E-GE3 delivers balanced trade-offs: superior avalanche ruggedness versus the IXTH part, and higher current capability with better thermal path than the STP part - making it optimal for 500–1000 W industrial SMPS and PFC designs.

Availability

SIHA15N60E-GE3 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active power factor correction circuits, and high-intensity discharge lighting ballasts requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHA15N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHA15N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in industrial and computing power supplies where ruggedness and consistent parametric performance are critical.

FAQ

What is the maximum continuous drain current rating for SIHA15N60E-GE3 at 100 °C case temperature?

The SIHA15N60E-GE3 supports 9.6 A continuous drain current at T_C = 100 °C, derated linearly from 15 A at 25 °C using a factor of 0.27 W/°C. This rating assumes proper heatsinking and is validated per absolute maximum ratings table in Vishay document 91571.

Does SIHA15N60E-GE3 have a fully rated avalanche capability, and what test conditions apply?

Yes, SIHA15N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 102 mJ, tested under V_DD = 50 V, L = 11.6 mH, R_g = 25 Ω, I_AS = 4.2 A, and starting T_J = 25 °C. This rating is guaranteed per datasheet Section "Absolute Maximum Ratings" and applies to unclamped inductive switching events.

Can SIHA15N60E-GE3 be driven directly by a microcontroller GPIO pin?

No - SIHA15N60E-GE3 requires ≥ 1 A peak gate drive current to charge its 76 nC total gate charge within typical switching times. A microcontroller GPIO cannot supply this; a dedicated gate driver IC (e.g., TC4420 or UCC27531) is mandatory for reliable operation of SIHA15N60E-GE3.

What is the body diode forward voltage of SIHA15N60E-GE3, and how does it affect synchronous rectification?

The body diode forward voltage (V_SD) of SIHA15N60E-GE3 is 1.2 V at I_S = 8 A and T_J = 25 °C. While usable in asynchronous topologies, this relatively high drop makes SIHA15N60E-GE3 unsuitable for synchronous rectification - external Schottky or MOSFET-based synchronous rectifiers are recommended instead.

Is SIHA15N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHA15N60E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow per J-STD-020. Peak solder temperature is rated at 300 °C for 10 seconds, matching standard Pb-free profile requirements. The "-GE3" suffix explicitly denotes this compliance.

SIHA15N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA15N60E-GE3 FAQ

1.How can I place an order for SIHA15N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA15N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA15N60E-GE3 reliable?

The price and inventory of SIHA15N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA15N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA15N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA15N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA15N60E-GE3?

SIHA15N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA15N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA15N60E-GE3?

For technical support, including SIHA15N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA15N60E-GE3 requirements.

6.How does Aetrix verify that SIHA15N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA15N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA15N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA15N60E-GE3?

All SIHA15N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA15N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA15N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHA15N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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