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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA15N65E-GE3

Name: SIHA15N65E-GE3
Brand: Vishay Siliconix
SKU: SIHA15N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA15N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA15N65E-GE3.pdf

Description:: MOSFET N-CHANNEL 650V 15A TO220

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Product details

Overview

SIHA15N65E-GE3 from Vishay Siliconix is a 650 V, 15 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 96 nC (max), and avalanche-rated E_AS = 286 mJ. It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHA15N65E-GE3 datasheet, SIHA15N65E-GE3 pinout, SIHA15N65E-GE3 application, or SIHA15N65E-GE3 equivalent, this device is selected for high-voltage, medium-current hard-switched topologies requiring robust UIS capability, low C_iss (2460 pF max), and thermal stability up to T_J = 150 °C.

Technical Context

The SIHA15N65E-GE3 employs planar silicon technology optimized for 650 V operation with controlled body diode recovery (t_rr = 325 ns, Q_rr = 4.6 μC). Its gate charge profile (Q_gs = 11 nC, Q_gd = 21 nC) supports fast, controllable turn-on/turn-off transitions under 100 V/ns dV/dt stress.

Designed for unclamped inductive switching, it sustains repetitive single-pulse avalanche energy up to 286 mJ (T_J = 25 °C, L = 28.2 mH, I_AS = 4.5 A) and exhibits stable R_DS(on) temperature coefficient (+0.75 V/°C) for predictable current sharing in parallel configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input rectified systems with ≥20 % safety margin
R_DS(on) max @ 10 V	0.28 Ω - enables ≤1.8 W conduction loss at 8 A DC, suitable for 300–500 W output stages
Q_g max	96 nC - determines gate drive power requirement and switching speed in 50–100 kHz PFC designs
E_AS	286 mJ - allows reliable operation under transient overcurrent without external snubbers
C_iss max	2460 pF - impacts Miller effect and gate driver sizing in high-dV/dt environments
T_J range	−55 to +150 °C - ensures functionality across industrial ambient conditions and forced-air-cooled enclosures
R_thJC	3.7 °C/W - defines minimum heatsink requirement for 34 W continuous dissipation at T_C = 100 °C

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free, halogen-free); dimensions per Vishay Doc #62649: D = 8.3–8.7 mm, d1 = 14.7–15.3 mm, L = 13.4–13.8 mm, with drain-connected tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path and thermal interface	Exposed copper tab electrically connected to drain; requires insulated mounting when heatsink is grounded
G (Gate)	Control terminal for channel modulation	Low-impedance input (R_g = 0.2–1.2 Ω) demanding <100 ns rise/fall time gate drivers for optimal Q_gd control
S (Source)	Reference node for gate drive and current return	Common source connection for internal body diode cathode; must be routed with low-inductance path to minimize switching oscillation

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	≤27 Ω·nC - balances conduction efficiency and switching speed better than standard 650 V MOSFETs
Avalanche energy rating (UIS)	286 mJ - eliminates need for external clamping in inductive load transients common in motor drives and PFC
Body diode t_rr / Q_rr	325 ns / 4.6 μC - reduces cross-conduction loss and EMI in bridge-leg configurations
Low C_iss and C_oss	2460 pF / 120 pF max - minimizes capacitive loading on gate drivers and improves dV/dt immunity
Thin-Lead TO-220 FULLPAK	Reduced lead inductance vs. standard TO-220 - enhances high-frequency switching integrity and thermal transfer to heatsink

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 80+ Platinum-certified 1 kW server PSUs operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, synchronized to PWM controller with 50–100 ns dead-time control. Use Value: Low Q_g and R_DS(on) reduce total losses by ~12 % vs. legacy 650 V MOSFETs, enabling higher power density without derating.	Use Scenario: Boost switch in −48 V telecom rectifier front-end with universal AC input (90–264 V AC). IC Role / Device Role / Timing Role: Fast-switching PFC stage element rated for continuous 15 A peak current and 650 V blocking. Use Value: Avalanche rating ensures reliability during line surges and cold-start inrush, eliminating need for redundant protection circuits.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level 3 kW microinverters interfacing 600–1000 V PV arrays. IC Role / Device Role / Timing Role: Unidirectional high-side switch in interleaved boost stage, operating with 150 kHz switching frequency. Use Value: Stable R_DS(on) temperature coefficient enables predictable current sharing in paralleled configurations for scalable power output.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC drives with regenerative braking. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz variable-frequency drive outputs. Use Value: Body diode Q_rr and t_rr values support efficient freewheeling with minimal reverse recovery loss and voltage overshoot.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 80+ Platinum-certified 1 kW server PSUs operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, synchronized to PWM controller with 50–100 ns dead-time control.

Use Value: Low Q_g and R_DS(on) reduce total losses by ~12 % vs. legacy 650 V MOSFETs, enabling higher power density without derating.

Use Scenario: Boost switch in −48 V telecom rectifier front-end with universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Fast-switching PFC stage element rated for continuous 15 A peak current and 650 V blocking.

Use Value: Avalanche rating ensures reliability during line surges and cold-start inrush, eliminating need for redundant protection circuits.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level 3 kW microinverters interfacing 600–1000 V PV arrays.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in interleaved boost stage, operating with 150 kHz switching frequency.

Use Value: Stable R_DS(on) temperature coefficient enables predictable current sharing in paralleled configurations for scalable power output.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC drives with regenerative braking.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz variable-frequency drive outputs.

Use Value: Body diode Q_rr and t_rr values support efficient freewheeling with minimal reverse recovery loss and voltage overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N65M2	R_DS(on) = 0.32 Ω (max), Q_g = 85 nC, TO-220FP package, no UIS rating	Lacks avalanche energy specification; requires external clamping in inductive loads	Prefer SIHA15N65E-GE3 where unclamped inductive stress is present (e.g., PFC, motor drives)
IXTH15N65X2	R_DS(on) = 0.27 Ω (max), Q_g = 105 nC, TO-247AC package, E_AS = 320 mJ	Higher Q_g increases gate drive loss; larger TO-247 footprint demands PCB layout change	Choose SIHA15N65E-GE3 for space-constrained TO-220 designs needing balanced Q_g/R_DS(on) and proven UIS robustness

Compared with STP15N65M2 and IXTH15N65X2, the SIHA15N65E-GE3 offers superior FOM (27 Ω·nC), certified UIS capability, and TO-220 FULLPAK thermal performance-making it optimal for compact, high-reliability 650 V SMPS where layout area and transient resilience are critical.

Availability

SIHA15N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.

Supply support for SIHA15N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHA15N65E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage switching applications demanding low gate charge, tight R_DS(on) tolerance, and guaranteed avalanche capability in telecom, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHA15N65E-GE3 at 100 °C case temperature?

The SIHA15N65E-GE3 supports 10 A continuous drain current at T_C = 100 °C, derated linearly from 15 A at T_C = 25 °C using the specified 0.27 W/°C derating factor. This rating assumes proper heatsinking and adherence to R_thJC = 3.7 °C/W thermal path. The SIHA15N65E-GE3 must not exceed its 150 °C maximum junction temperature under steady-state operation.

Does SIHA15N65E-GE3 have a fully rated avalanche energy specification, and how is it tested?

Yes, the SIHA15N65E-GE3 is rated for single-pulse avalanche energy E_AS = 286 mJ under defined test conditions: V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.5 A. This rating is verified per JEDEC JESD24-11 and applies to repetitive operation within thermal limits. The SIHA15N65E-GE3 is designed for robustness in unclamped inductive switching events typical in PFC and motor drive circuits.

What is the gate-source threshold voltage range for SIHA15N65E-GE3, and why does it matter for drive circuit design?

The SIHA15N65E-GE3 has a V_GS(th) range of 2–4 V at I_D = 250 μA, indicating strong gate control margin above logic-level thresholds. This ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise or leakage. For stable operation, gate drive must exceed 4 V to guarantee full enhancement, and the SIHA15N65E-GE3 should never be operated near its 30 V V_GS absolute maximum rating.

How does the body diode performance of SIHA15N65E-GE3 compare to standard 650 V MOSFETs in bridge configurations?

The SIHA15N65E-GE3 features a fast, soft-recovery body diode with t_rr = 325 ns and Q_rr = 4.6 μC at T_J = 25 °C, significantly lower than typical 650 V MOSFETs (t_rr > 500 ns). This reduces switching loss and voltage overshoot during commutation in half-bridge and full-bridge topologies. The SIHA15N65E-GE3's diode characteristics are fully characterized and usable in synchronous rectification or freewheeling roles without external Schottky supplementation.

Is SIHA15N65E-GE3 compatible with lead-free reflow soldering processes, and what is its peak temperature limit?

Yes, the SIHA15N65E-GE3 is lead-free and halogen-free, qualified for standard Pb-free reflow per J-STD-020. Its maximum peak soldering temperature is 300 °C for 10 seconds, matching IPC/JEDEC Class 3 requirements. The device uses matte tin plating on leads and meets Vishay's material compliance standards (Doc #99912). Proper thermal profiling is essential to avoid exceeding this limit and compromising the SIHA15N65E-GE3's internal bond integrity.

SIHA15N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2460 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA15N65E-GE3 FAQ

1.How can I place an order for SIHA15N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA15N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA15N65E-GE3 reliable?

The price and inventory of SIHA15N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA15N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA15N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA15N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA15N65E-GE3?

SIHA15N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA15N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA15N65E-GE3?

For technical support, including SIHA15N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA15N65E-GE3 requirements.

6.How does Aetrix verify that SIHA15N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA15N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA15N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA15N65E-GE3?

All SIHA15N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA15N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA15N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHA15N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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