Vishay Siliconix SIHA15N80AEF-GE3

Overview

SIHA15N80AEF-GE3 from Vishay Siliconix is an 800 V, 6 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.305 Ω (typ.) at V_GS = 10 V, Q_g = 36 nC (typ.), and avalanche-rated (E_AS = 28 mJ). It integrates a fast-recovery body diode (t_rr = 104 ns, Q_rr = 0.4 μC) and targets high-efficiency switching in PFC and SMPS stages.

For engineers reviewing the SIHA15N80AEF-GE3 datasheet, SIHA15N80AEF-GE3 pinout, SIHA15N80AEF-GE3 application, or SIHA15N80AEF-GE3 equivalent, key selection criteria include its 800 V blocking capability, low Co(er) = 34 pF for reduced switching loss, UIS-rated ruggedness, TO-220 FULLPAK thermal performance (R_thJC = 3.8 °C/W), and lead-free/halogen-free compliance per Vishay S21-0726-Rev. A.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its gate charge profile (Q_gd/Q_g = 15/36 nC) supports controlled dv/dt during turn-off, while the low effective output capacitance (Co(er) = 34 pF) minimizes energy loss during zero-voltage switching transitions in resonant topologies.

The integrated body diode exhibits fast reverse recovery (t_rr = 104 ns, I_RRM = 8 A) with low Q_rr, enabling reliable operation in continuous conduction mode (CCM) PFC and synchronous rectification where diode commutation stress is critical. Thermal design leverages the TO-220 FULLPAK's low junction-to-case resistance (3.8 °C/W) for direct heatsink mounting.

Key Specifications

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (JEDEC TO-220AB variant with reduced lead thickness and enhanced thermal pad contact). Dimensions per Vishay Doc. #62649: D = 8.5 mm, d1 = 15.0 mm, E = 10.0 mm, L = 13.6 mm, ØP = 3.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW12NK80Z and IXTH12N80L2, SIHA15N80AEF-GE3 offers superior switching efficiency per watt due to lower Co(er) and verified fast diode performance, while its TO-220 FULLPAK enables higher power density than TO-247 alternatives in space-constrained telecom and server modules.

Availability

SIHA15N80AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHA15N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power devices.

The EF Series, including SIHA15N80AEF-GE3, is engineered for high-voltage switching in demanding power conversion applications-specifically targeting PFC, SMPS, and industrial motor drives where low switching loss and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHA15N80AEF-GE3 at 100 °C case temperature?

The SIHA15N80AEF-GE3 has a continuous drain current rating of 4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures safe operation within the 150 °C maximum junction temperature. Engineers must verify heatsink design to maintain T_C ≤ 100 °C under full-load conditions for SIHA15N80AEF-GE3.

Does SIHA15N80AEF-GE3 have a fully characterized body diode for use in synchronous rectification?

Yes, SIHA15N80AEF-GE3 includes a fully characterized fast-recovery body diode with t_rr = 104 ns (typ.), Q_rr = 0.4 μC (typ.), and I_RRM = 8 A (max). These parameters are measured under standardized conditions (T_J = 25 °C, I_F = 6.5 A, di/dt = 100 A/μs, V_R = 25 V) and support reliable use in CCM PFC and synchronous rectifier topologies where diode commutation behavior directly impacts efficiency and EMI. The SIHA15N80AEF-GE3 datasheet provides full diode characterization curves (Fig. 8, Fig. 16).

Is SIHA15N80AEF-GE3 suitable for use in unclamped inductive switching (UIS) applications?

Yes, SIHA15N80AEF-GE3 is explicitly rated for unclamped inductive switching with E_AS = 28 mJ (single-pulse, test condition: V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.4 A). This rating is confirmed per JEDEC JESD24-1 and enables robust operation in circuits with inductive loads such as motor drives and welding equipment without requiring external avalanche clamps. The SIHA15N80AEF-GE3 product summary highlights this as a core feature.

What is the gate threshold voltage range for SIHA15N80AEF-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHA15N80AEF-GE3 is specified as 2–4 V at V_DS = V_GS and I_D = 250 μA. This range indicates standard-level gate drive compatibility - it requires ≥10 V for full enhancement (R_DS(on) = 0.305 Ω typ.) but will begin conducting significantly above 4 V. Designers must ensure gate drive rails exceed 10 V with sufficient current capability (≥100 mA peak) to achieve fast switching; the SIHA15N80AEF-GE3 Q_g = 36 nC (typ.) defines the minimum charge delivery requirement.

How does the TO-220 FULLPAK package of SIHA15N80AEF-GE3 differ thermally from standard TO-220AB?

The TO-220 FULLPAK package used by SIHA15N80AEF-GE3 features an enlarged copper drain tab and thinner leads that improve thermal conduction from junction to case. Its R_thJC is 3.8 °C/W (max), versus ~4.5–5.0 °C/W for standard TO-220AB, enabling up to 15 % higher power dissipation at the same case temperature. This is achieved without increasing footprint - the SIHA15N80AEF-GE3 maintains JEDEC-standard outline dimensions (D = 8.5 mm, E = 10.0 mm) while optimizing internal thermal path integrity.