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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA15N80AE-GE3

Name: SIHA15N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHA15N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA15N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA15N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 6A TO220

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Product details

Overview

SIHA15N80AE-GE3 from Vishay Siliconix is an 800 V, 6 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.304 Ω (typ, V_GS = 10 V), Q_g = 35 nC (typ), and E_AS = 28 mJ (single-pulse). It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA15N80AE-GE3 datasheet, SIHA15N80AE-GE3 pinout, SIHA15N80AE-GE3 application, or SIHA15N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS rating, avalanche energy capability, Co(er) = 35 pF, R_thJC = 3.8 °C/W, and lead-free/halogen-free packaging - all critical for robust, thermally constrained industrial and renewable energy converters.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage, medium-current switching with fast body diode recovery (t_rr = 333 ns typ) and low reverse recovery charge (Q_rr = 3.7 μC typ). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device integrates a monolithic body diode rated for I_S = 13 A continuous and I_SM = 29 A pulsed, with V_SD = 1.2 V (T_J = 25 °C, I_S = 7.5 A). Its dv/dt ruggedness (100 V/ns at T_J = 125 °C) supports stable operation in high-dV/dt environments such as resonant LLC and phase-shifted full-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 640 V DC bus designs with 25 % margin for transient overvoltage in PFC and offline SMPS
R_DS(on) typ	0.304 Ω @ V_GS = 10 V - enables <1.7 W conduction loss at 7.5 A, reducing heatsink requirements
Q_g max	53 nC - determines gate drive power and switching speed; compatible with common 1–2 A peak gate drivers
E_AS	28 mJ - unclamped inductive switching capability allows safe operation during load dump or short-circuit events
R_thJC	3.8 °C/W - enables >25 W power dissipation with modest heatsinking at T_C = 100 °C
t_rr	333 ns typ - reduces diode-related switching loss and EMI in bridge-leg configurations
Co(er)	35 pF - low energy-related output capacitance improves light-load efficiency in high-frequency converters

Pinout & Package

SIHA15N80AE-GE3 is housed in a Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with drain-connected tab for direct thermal mounting and improved mechanical reliability versus standard TO-220. Dimensions per Vishay Doc. 62649: D = 8.5 mm, d1 = 15.0 mm, E = 10.0 mm, L = 13.6 mm, ØP = 3.2 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path to high-side switch node	Electrically and thermally connected to package backside; requires insulated mounting or direct heatsink contact
Source	Reference node for gate drive and current sensing	Low-inductance connection point for source resistor or Kelvin sense; ties to power ground plane
Gate	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor (R_g = 9.1 Ω typical) to damp ringing and control dV/dt

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	10.7 Ω·nC (0.304 Ω × 35 nC) - balances conduction and switching loss for 100–300 kHz PFC stages
Avalanche-rated (UIS)	28 mJ single-pulse energy - eliminates need for external snubbers in inductive load switching
Low Co(er)	35 pF - minimizes capacitive discharge loss during turn-on, improving efficiency above 200 kHz
Enhanced body diode	t_rr = 333 ns, Q_rr = 3.7 μC - reduces cross-conduction loss and EMI in synchronous rectification and half-bridge operation
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for green manufacturing and export compliance

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW front-end AC-DC converter with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switch handling 400 V DC bus, operating at 150 kHz with zero-voltage switching assistance. Use Value: SIHA15N80AE-GE3's 800 V rating and 28 mJ UIS withstand bus transients; low Q_g enables precise timing control of clamp timing.	Use Scenario: Boost PFC stage in 2 kW telecom rectifier feeding -48 V distributed power system. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 380–400 V DC link, synchronized to line frequency for THD control. Use Value: SIHA15N80AE-GE3's 0.304 Ω R_DS(on) limits conduction loss to <1.2 W at full load; low C_oss improves light-load efficiency.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge leg, subjected to repetitive 600 V blocking and 10 kHz PWM. Use Value: SIHA15N80AE-GE3's 100 V/ns dv/dt rating prevents false turn-on during commutation; R_thJC = 3.8 °C/W sustains 22 W dissipation without forced air.	Use Scenario: Brake chopper circuit in 7.5 kW variable frequency drive dissipating regenerative energy into dynamic braking resistor. IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during deceleration, conducting up to 13 A pulsed current. Use Value: SIHA15N80AE-GE3's 29 A pulsed diode current (I_SM) and 1.2 V V_SD minimize heat generation during frequent brake cycles.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW front-end AC-DC converter with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switch handling 400 V DC bus, operating at 150 kHz with zero-voltage switching assistance.

Use Value: SIHA15N80AE-GE3's 800 V rating and 28 mJ UIS withstand bus transients; low Q_g enables precise timing control of clamp timing.

Use Scenario: Boost PFC stage in 2 kW telecom rectifier feeding -48 V distributed power system.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 380–400 V DC link, synchronized to line frequency for THD control.

Use Value: SIHA15N80AE-GE3's 0.304 Ω R_DS(on) limits conduction loss to <1.2 W at full load; low C_oss improves light-load efficiency.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge leg, subjected to repetitive 600 V blocking and 10 kHz PWM.

Use Value: SIHA15N80AE-GE3's 100 V/ns dv/dt rating prevents false turn-on during commutation; R_thJC = 3.8 °C/W sustains 22 W dissipation without forced air.

Use Scenario: Brake chopper circuit in 7.5 kW variable frequency drive dissipating regenerative energy into dynamic braking resistor.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during deceleration, conducting up to 13 A pulsed current.

Use Value: SIHA15N80AE-GE3's 29 A pulsed diode current (I_SM) and 1.2 V V_SD minimize heat generation during frequent brake cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW12NK80Z	800 V, 12 A, R_DS(on) = 0.58 Ω, Q_g = 45 nC, TO-247 package	Higher current rating but higher R_DS(on) and larger footprint; no Co(er) spec	Preferred where higher ID and TO-247 thermal mass are needed; not drop-in due to different package and pinout
IXTH12N80L2	800 V, 12 A, R_DS(on) = 0.52 Ω, Q_g = 42 nC, TO-247 package, logic-level gate	Lower V_GS(th) (2–4 V vs. 3–5 V), higher ID, but larger R_DS(on) and no E_AS rating	Selected when 5 V gate drive is required; unsuitable for avalanche-prone layouts without external protection

Compared with STW12NK80Z and IXTH12N80L2, SIHA15N80AE-GE3 offers superior FOM (10.7 vs. ≥24 Ω·nC), smaller TO-220 FULLPAK footprint, and verified UIS ruggedness - making it optimal for space-constrained, high-reliability 6–10 A PFC and SMPS designs.

Availability

SIHA15N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHA15N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line - including SIHA15N80AE-GE3 - is engineered for high-efficiency, high-reliability switching in 400–800 V DC bus systems, with emphasis on low FOM, avalanche ruggedness, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current rating for SIHA15N80AE-GE3 at 100 °C case temperature?

The SIHA15N80AE-GE3 has a continuous drain current rating of 4 A at T_C = 100 °C, derated linearly from 6 A at T_C = 25 °C using a factor of 0.26 W/°C. This reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package under real-world heatsink conditions, and must be validated against actual board layout and airflow.

Does SIHA15N80AE-GE3 support gate drive voltages below 10 V?

Yes - SIHA15N80AE-GE3 has a gate threshold voltage range of 2–4 V, enabling turn-on with 5 V logic-level drivers. However, R_DS(on) increases significantly below V_GS = 10 V (e.g., 0.45 Ω typ at V_GS = 8 V), so full 10 V drive is recommended for minimum conduction loss in power conversion applications using SIHA15N80AE-GE3.

Is SIHA15N80AE-GE3 suitable for use in synchronous rectification topologies?

No - SIHA15N80AE-GE3 is not optimized for synchronous rectification. Its body diode t_rr = 333 ns and Q_rr = 3.7 μC are acceptable for freewheeling, but the device lacks dedicated SR control features (e.g., integrated driver, adaptive dead-time control). For SR applications, dedicated synchronous rectifier controllers paired with low-V_F Schottky or trench MOSFETs are preferred over SIHA15N80AE-GE3.

What is the meaning of "-GE3" suffix in SIHA15N80AE-GE3?

The "-GE3" suffix denotes Vishay's standard lead (Pb)-free and halogen-free packaging per JEDEC J-STD-609A Class 3, with matte tin plating on leads and compliant molding compound. It confirms SIHA15N80AE-GE3 meets RoHS Directive 2011/65/EU and is suitable for green manufacturing without requiring special solder profile adjustments beyond standard Pb-free reflow.

Can SIHA15N80AE-GE3 replace older SiHA15N80AE variants in existing designs?

Yes - SIHA15N80AE-GE3 is a direct replacement for prior revisions of SIHA15N80AE (e.g., non-GE3 versions), with identical electrical specifications, pinout, and package dimensions. The "-GE3" designation reflects only material content updates (lead-free/halogen-free); no changes were made to R_DS(on), Q_g, or thermal performance in the SIHA15N80AE-GE3 revision.

SIHA15N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1093 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA15N80AE-GE3 FAQ

1.How can I place an order for SIHA15N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA15N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA15N80AE-GE3 reliable?

The price and inventory of SIHA15N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA15N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA15N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA15N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA15N80AE-GE3?

SIHA15N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA15N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA15N80AE-GE3?

For technical support, including SIHA15N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA15N80AE-GE3 requirements.

6.How does Aetrix verify that SIHA15N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA15N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA15N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA15N80AE-GE3?

All SIHA15N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA15N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA15N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHA15N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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