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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA17N80AEF-GE3

Name: SIHA17N80AEF-GE3
Brand: Vishay Siliconix
SKU: SIHA17N80AEF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA17N80AEF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA17N80AEF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHA17N80AEF-GE3 from Vishay Siliconix is an 800 V, 6.5 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.263 Ω (typ) at V_GS = 10 V, Q_g = 42 nC (typ), and avalanche-rated (E_AS = 127 mJ). It delivers low switching and conduction losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA17N80AEF-GE3 datasheet, SIHA17N80AEF-GE3 pinout, SIHA17N80AEF-GE3 application, or SIHA17N80AEF-GE3 equivalent, this page provides verified electrical parameters, thermal resistance values (R_thJC = 3.7 °C/W), fast body diode characteristics (t_rr = 114 ns typ), and validated alternatives for industrial power design validation.

Technical Context

This device employs a planar high-voltage silicon process optimized for rugged unclamped inductive switching (UIS), with a fast-recovery integral body diode (Q_rr = 0.7 μC typ, t_rr = 114 ns) and low effective output capacitance (C_o(er) = 39 pF). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures stable turn-on under wide temperature ranges (T_J = –55 to +150 °C).

The MOSFET supports hard-switched topologies with dv/dt capability of 100 V/ns (T_J = 125 °C) and reverse diode dv/dt rating of 50 V/ns. Its low FOM (R_DS(on) × Q_g) enables reduced gate drive loss and improved efficiency in continuous conduction mode (CCM) PFC and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - Supports 640 V DC bus designs with 25 % margin for transient overvoltage in telecom rectifiers and PV inverters.
R_DS(on) typ @ 10 V	0.263 Ω - Enables ≤ 1.5 W conduction loss at 6.5 A, critical for thermally constrained 1U server PSUs.
Q_g max	63 nC - Determines gate driver current requirement (≥ 0.7 A peak for 90 ns turn-on with 9.1 Ω R_g).
E_AS	127 mJ - Guarantees single-pulse avalanche robustness during startup or overload in offline SMPS without snubber circuits.
t_rr	114 ns (typ) - Minimizes diode recovery loss and EMI in bridge-leg commutation for PFC boost stages.
R_thJC	3.7 °C/W - Allows ≥ 25 W power dissipation with 65 °C case temperature rise, enabling compact heatsink integration.
I_D cont @ T_C = 100 °C	4.1 A - Defines usable current derating in enclosed industrial enclosures with limited airflow.

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free/halogen-free, 8.3–8.7 mm width, 14.7–15.3 mm length, 13.4–13.8 mm height). Mounting torque: 0.6 N·m (M3 screw).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; input capacitance C_iss = 1300 pF requires low-impedance gate driver to minimize switching loss.
D (Drain)	High-side power switch node	Connected to HV DC bus (≤ 640 V); electrically tied to exposed tab for low-inductance thermal path to heatsink.
S (Source)	Power return / reference node	Serves as common reference for gate drive and current sensing; body diode anode is internally connected here.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	Reduces combined conduction and switching loss by >15 % vs. standard 800 V MOSFETs in 100–300 kHz PFC stages.
Avalanche energy rated (UIS)	Enables reliable operation without external clamping in inductive load switching, reducing BOM count in welding and motor drive inverters.
Fast body diode (t_rr = 114 ns)	Minimizes reverse recovery overshoot and ringing in synchronous rectification and half-bridge configurations.
Low C_o(er) (39 pF)	Improves light-load efficiency and reduces capacitive switching loss in resonant LLC converters operating above 200 kHz.
Thin-Lead TO-220 FULLPAK	Offers 30 % lower thermal resistance than standard TO-220 due to direct-drain-to-tab construction and enhanced copper leadframe.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or LLC resonant converter in 1U 2 kW AC/DC PSU. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 640 V DC bus with 100 kHz–300 kHz switching. Use Value: Low Q_g and fast body diode reduce gate drive loss and dead-time conduction loss, improving full-load efficiency by 0.4–0.6 %.	Use Scenario: Boost PFC stage in -48 V telecom rectifier with 380 V DC output. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch operating at 65–100 kHz. Use Value: 127 mJ E_AS withstands line surges without failure; R_DS(on) = 0.263 Ω limits thermal rise in forced-air-cooled chassis.
PV Inverter DC-DC Stage	Industrial Motor Drive
Use Scenario: Isolated DC-DC stage stepping up PV array voltage (600–1000 V) to 1200 V bus for inverter input. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with ZVS capability. Use Value: Low C_o(er) (39 pF) enables reliable zero-voltage switching down to 20 % load, extending ZVS range by 15 %.	Use Scenario: Brake chopper or auxiliary supply switch in 3-phase IGBT inverter drives (15–30 kW). IC Role / Device Role / Timing Role: Unclamped inductive switching device dissipating regenerative energy during rapid deceleration. Use Value: Rated UIS energy (127 mJ) eliminates need for external TVS or RC snubbers, simplifying PCB layout and reducing cost.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter in 1U 2 kW AC/DC PSU.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 640 V DC bus with 100 kHz–300 kHz switching.

Use Value: Low Q_g and fast body diode reduce gate drive loss and dead-time conduction loss, improving full-load efficiency by 0.4–0.6 %.

Use Scenario: Boost PFC stage in -48 V telecom rectifier with 380 V DC output.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch operating at 65–100 kHz.

Use Value: 127 mJ E_AS withstands line surges without failure; R_DS(on) = 0.263 Ω limits thermal rise in forced-air-cooled chassis.

PV Inverter DC-DC Stage

Industrial Motor Drive

Use Scenario: Isolated DC-DC stage stepping up PV array voltage (600–1000 V) to 1200 V bus for inverter input.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with ZVS capability.

Use Value: Low C_o(er) (39 pF) enables reliable zero-voltage switching down to 20 % load, extending ZVS range by 15 %.

Use Scenario: Brake chopper or auxiliary supply switch in 3-phase IGBT inverter drives (15–30 kW).

IC Role / Device Role / Timing Role: Unclamped inductive switching device dissipating regenerative energy during rapid deceleration.

Use Value: Rated UIS energy (127 mJ) eliminates need for external TVS or RC snubbers, simplifying PCB layout and reducing cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N65M5	650 V rating, R_DS(on) = 0.065 Ω, Q_g = 65 nC, TO-247 package	Lower voltage ceiling limits use to ≤ 520 V DC bus; higher peak current (48 A) suits high-power motor drives.	Select when system DC bus ≤ 520 V and higher continuous current (>10 A) is required; requires larger heatsink due to TO-247 R_thJC = 0.45 °C/W.
IXTH12N80L2	800 V rating, R_DS(on) = 0.65 Ω, Q_g = 27 nC, TO-247 package, logic-level gate (V_GS(th) = 2–4 V)	Higher R_DS(on) increases conduction loss but lower Q_g eases gate drive; lacks avalanche rating.	Prefer for space-constrained logic-driven designs where avalanche robustness is secondary; not recommended for unclamped inductive loads.

Compared with STW48N65M5 and IXTH12N80L2, SIHA17N80AEF-GE3 uniquely balances 800 V capability, low R_DS(on), fast body diode, and certified avalanche performance in a thermally efficient FULLPAK package-making it optimal for high-reliability 640 V PFC and telecom SMPS where both voltage margin and thermal density matter.

Availability

SIHA17N80AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and PV inverter DC-DC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHA17N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and ruggedized packaging.

The EF Series power MOSFETs-including SIHA17N80AEF-GE3-are engineered for high-efficiency, high-voltage switching in demanding power conversion applications such as PFC, server PSUs, and industrial inverters, prioritizing low FOM and fast body diode performance.

FAQ

What is the maximum continuous drain current for SIHA17N80AEF-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA17N80AEF-GE3 is 4.1 A when the case temperature (T_C) is 100 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its 3.7 °C/W junction-to-case thermal resistance. SIHA17N80AEF-GE3 must be mounted with proper heatsinking and torque (0.6 N·m) to maintain this rating.

Does SIHA17N80AEF-GE3 have avalanche energy rating, and what is its value?

Yes, SIHA17N80AEF-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 127 mJ, tested under V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3 A. This rating allows SIHA17N80AEF-GE3 to safely absorb inductive energy spikes without external protection in applications like motor drive brake choppers and welding inverters.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA17N80AEF-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHA17N80AEF-GE3 is 114 ns, measured at T_J = 25 °C, I_F = I_S = 8.5 A, di/dt = 100 A/μs, and V_R = 400 V. This fast recovery characteristic minimizes switching loss and voltage overshoot during commutation, making SIHA17N80AEF-GE3 especially suitable for high-frequency PFC and synchronous rectification.

Is SIHA17N80AEF-GE3 compatible with standard TO-220 footprint layouts?

No, SIHA17N80AEF-GE3 uses the Thin-Lead TO-220 FULLPAK package, which has different leadframe geometry and mounting dimensions versus standard TO-220. Its D-shaped tab and thinner leads require specific PCB cutouts and solder pad layout per Vishay's drawing 62649. Using SIHA17N80AEF-GE3 in a standard TO-220 footprint may cause mechanical stress or thermal performance degradation.

What gate-source voltage range is specified for SIHA17N80AEF-GE3 operation?

The gate-source voltage range for SIHA17N80AEF-GE3 is ±30 V, with absolute maximum rating. For reliable enhancement-mode operation, V_GS must exceed the threshold voltage (2–4 V) and is typically driven at 10 V for R_DS(on) specification. Gate drive circuits must limit transient overshoot to avoid exceeding ±30 V, as prolonged exposure degrades gate oxide integrity and impacts SIHA17N80AEF-GE3 lifetime.

SIHA17N80AEF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 305mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA17N80AEF-GE3 FAQ

1.How can I place an order for SIHA17N80AEF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA17N80AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA17N80AEF-GE3 reliable?

The price and inventory of SIHA17N80AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA17N80AEF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA17N80AEF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA17N80AEF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA17N80AEF-GE3?

SIHA17N80AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA17N80AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA17N80AEF-GE3?

For technical support, including SIHA17N80AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA17N80AEF-GE3 requirements.

6.How does Aetrix verify that SIHA17N80AEF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA17N80AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA17N80AEF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA17N80AEF-GE3?

All SIHA17N80AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA17N80AEF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA17N80AEF-GE3 part is unused and in its original packaging.

Return procedure for SIHA17N80AEF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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