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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA17N80AE-GE3

Name: SIHA17N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHA17N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA17N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA17N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 7A TO220

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Product details

Overview

SIHA17N80AE-GE3 from Vishay Siliconix is an 800 V, 7 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring 0.25 Ω R_DS(on) at V_GS = 10 V, 62 nC total gate charge, and 127 mJ single-pulse avalanche energy - optimized for high-voltage switching in telecom PFC stages and solar PV inverters.

For engineers reviewing the SIHA17N80AE-GE3 datasheet, SIHA17N80AE-GE3 pinout, SIHA17N80AE-GE3 application, or SIHA17N80AE-GE3 equivalent, this device is evaluated for high-efficiency, high-reliability hard-switched topologies where low conduction loss, controlled dV/dt (100 V/ns), and robust UIS capability are critical selection criteria.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized charge balance for reduced figure-of-merit (R_DS(on) × Q_g = 15.5 Ω·nC). Its 40 pF Co(er) and 245 pF Co(tr) values reflect tailored output capacitance behavior under 0–480 V transitions, enabling predictable turn-off energy and snubber design in 640 V bus applications.

The device integrates a fast-recovery body diode with 314 ns typical reverse recovery time (trr), 4 μC Q_rr, and 21 A peak reverse recovery current (I_RRM) - supporting ZVS-capable half-bridge configurations while limiting commutation losses in industrial motor drives and welding inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 640 V DC bus designs with 25 % voltage margin for transient overvoltage in telecom and solar inverters
R_DS(on) typ	0.25 Ω at V_GS = 10 V, I_D = 8.5 A - enables ≤1.8 W conduction loss at 7 A continuous drain current
Q_g max	62 nC - determines gate drive power requirement (~1.2 mW per MHz at 10 V swing) in 100–300 kHz SMPS
E_AS	127 mJ - ensures single-pulse unclamped inductive switching survivability without external clamping in PFC boost chokes
C_oss	56 pF - contributes to voltage-dependent turn-off loss; Co(er) = 40 pF used for E_oss calculation in soft-switching analysis
T_J range	–55 °C to +150 °C - qualified for industrial ambient environments up to 100 °C case temperature with derated current
dV/dt rating	100 V/ns at T_J = 125 °C - suppresses false turn-on in high-dV/dt bridge legs without requiring negative gate bias

Pinout & Package

Thin-Lead TO-220 FULLPAK package: 3-terminal through-hole outline with isolated drain tab (D), source (S), and gate (G) leads; 14.7–15.3 mm lead length, 3.0–3.4 mm mounting hole diameter, and 3.7 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power terminal	Electrically connected to metal tab; requires insulated mounting hardware when heatsink is grounded
S (Source)	Reference node for gate drive and current sensing	Low-inductance return path; shared with body diode cathode; used for Kelvin source sensing in precision control
G (Gate)	Control input for channel modulation	High-impedance MOS gate; requires <1.1 Ω series resistance to damp ringing and limit dI/dt during switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15.5 Ω·nC - reduces combined conduction and switching loss in high-frequency PFC and resonant converters
Avalanche-rated (UIS)	127 mJ single-pulse - eliminates need for external RCD clamp in boost PFC and flyback designs
Low effective output capacitance	Co(er) = 40 pF - minimizes stored energy (E_oss) and improves light-load efficiency in hard-switched topologies
Fast body diode recovery	trr = 314 ns, Q_rr = 4 μC - reduces cross-conduction loss and EMI in synchronous rectification and half-bridge LLC
Lead (Pb)-free & halogen-free	Compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard 99912

Applications

Server & Telecom PFC	Solar PV Inverters
Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 100 kHz with 400–640 V DC bus. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles full line-frequency ripple current and high-voltage stress. Use Value: 0.25 Ω R_DS(on) and 127 mJ E_AS enable >98 % efficiency and reliable operation under line surges without snubber circuits.	Use Scenario: DC-AC H-bridge in string inverter with 800 V DC input and 50/60 Hz AC output. IC Role / Device Role / Timing Role: High-side switch in unipolar PWM-controlled full-bridge; subjected to repetitive 640 V blocking and 7 A load current. Use Value: 100 V/ns dV/dt rating prevents spurious turn-on during fast voltage transitions across complementary switches.
Industrial Motor Drives	Induction Heating Systems
Use Scenario: Inverter leg in 5 kW variable-frequency drive powering 3-phase induction motor. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter; conducts freewheeling current via integrated body diode. Use Value: 314 ns trr and 21 A I_RRM reduce diode recovery loss and electromagnetic interference during 10–20 kHz PWM commutation.	Use Scenario: Half-bridge resonant inverter in 10 kW induction cooker operating at 20–50 kHz. IC Role / Device Role / Timing Role: High-frequency switching device in series-resonant tank; experiences high di/dt and zero-voltage switching transitions. Use Value: Low Co(tr) = 245 pF enables precise timing of zero-voltage detection and reduces dead-time sensitivity in resonant control.

Server & Telecom PFC

Solar PV Inverters

Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 100 kHz with 400–640 V DC bus.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles full line-frequency ripple current and high-voltage stress.

Use Value: 0.25 Ω R_DS(on) and 127 mJ E_AS enable >98 % efficiency and reliable operation under line surges without snubber circuits.

Use Scenario: DC-AC H-bridge in string inverter with 800 V DC input and 50/60 Hz AC output.

IC Role / Device Role / Timing Role: High-side switch in unipolar PWM-controlled full-bridge; subjected to repetitive 640 V blocking and 7 A load current.

Use Value: 100 V/ns dV/dt rating prevents spurious turn-on during fast voltage transitions across complementary switches.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: Inverter leg in 5 kW variable-frequency drive powering 3-phase induction motor.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter; conducts freewheeling current via integrated body diode.

Use Value: 314 ns trr and 21 A I_RRM reduce diode recovery loss and electromagnetic interference during 10–20 kHz PWM commutation.

Use Scenario: Half-bridge resonant inverter in 10 kW induction cooker operating at 20–50 kHz.

IC Role / Device Role / Timing Role: High-frequency switching device in series-resonant tank; experiences high di/dt and zero-voltage switching transitions.

Use Value: Low Co(tr) = 245 pF enables precise timing of zero-voltage detection and reduces dead-time sensitivity in resonant control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW38N80K5	R_DS(on) = 0.28 Ω, Q_g = 65 nC, E_AS = 110 mJ, TO-247 package	Higher thermal resistance (R_thJC = 0.5 °C/W vs. 3.7 °C/W) requires larger heatsink; not drop-in compatible due to different footprint and lead form	Preferred for higher-power (>5 kW), forced-air-cooled systems where TO-247 mechanical robustness outweighs board space constraints
IXFH30N80X	R_DS(on) = 0.27 Ω, Q_g = 52 nC, E_AS = 150 mJ, TO-247 package	Lower Q_g improves high-frequency switching efficiency but lacks Co(er)/Co(tr) characterization; no specified dV/dt rating	Better suited for ZVS resonant topologies where gate charge dominates loss, but requires external dV/dt protection in hard-switched bridges

Compared with STW38N80K5 and IXFH30N80X, SIHA17N80AE-GE3 delivers superior thermal performance in compact TO-220 FULLPAK packaging, balanced FOM for 100–300 kHz operation, and verified dV/dt immunity - making it optimal for space-constrained, convection-cooled telecom and solar applications.

Availability

SIHA17N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHA17N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and ruggedized packaging.

The SIHA17N80AE-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for demanding hard-switched and resonant power conversion applications in telecom infrastructure, renewable energy, and industrial automation.

FAQ

What is the maximum continuous drain current rating for SIHA17N80AE-GE3 at 100 °C case temperature?

The SIHA17N80AE-GE3 has a continuous drain current rating of 4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package, which achieves 3.7 °C/W junction-to-case resistance. Designers must verify heatsink interface resistance and ambient conditions to maintain safe operation below 150 °C junction temperature.

Does SIHA17N80AE-GE3 support gate drive with 5 V logic-level signals?

No, SIHA17N80AE-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but R_DS(on) is specified only at V_GS = 10 V (0.25 Ω typ). Driving with 5 V yields significantly higher on-resistance and conduction loss - full enhancement requires ≥10 V gate drive, consistent with standard-level power MOSFETs.

How is the avalanche energy rating of SIHA17N80AE-GE3 validated?

The SIHA17N80AE-GE3 is rated for 127 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.0 A. This rating is measured per JEDEC JESD24-11 and qualifies the device for unclamped inductive switching events in boost PFC and flyback converters without external clamping.

What is the significance of Co(er) = 40 pF and Co(tr) = 245 pF for SIHA17N80AE-GE3?

Co(er) = 40 pF represents the fixed output capacitance value that yields the same stored energy as actual C_oss during V_DS rise from 0 V to 480 V; it directly impacts turn-off loss (E_oss). Co(tr) = 245 pF is the fixed capacitance giving the same charging time - critical for predicting voltage transition timing and snubber sizing in hard-switched converters. Both parameters are derived from measured C_oss vs. V_DS curves.

Can SIHA17N80AE-GE3 be used in parallel configurations?

Yes, SIHA17N80AE-GE3 supports paralleling due to its positive R_DS(on) temperature coefficient (0.8 V/°C V_DS tempco), which promotes current sharing. However, layout symmetry, matched gate drive impedance (<1.1 Ω), and individual source inductance balancing are required. The device's 3.7 °C/W R_thJC also enables uniform thermal coupling when mounted on a common heatsink.

SIHA17N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1260 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA17N80AE-GE3 FAQ

1.How can I place an order for SIHA17N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA17N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA17N80AE-GE3 reliable?

The price and inventory of SIHA17N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA17N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA17N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA17N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA17N80AE-GE3?

SIHA17N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA17N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA17N80AE-GE3?

For technical support, including SIHA17N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA17N80AE-GE3 requirements.

6.How does Aetrix verify that SIHA17N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA17N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA17N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA17N80AE-GE3?

All SIHA17N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA17N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA17N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHA17N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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