Vishay Siliconix SIHA17N80E-E3

Overview

SIHA17N80E-E3 from Vishay Siliconix is an 800 V, 6 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.25 Ω (typ. at V_GS = 10 V), Q_g = 61 nC (typ.), and 353 mJ single-pulse avalanche energy - optimized for high-voltage PFC and telecom SMPS stages.

For engineers reviewing the SIHA17N80E-E3 datasheet, SIHA17N80E-E3 pinout, SIHA17N80E-E3 application, or SIHA17N80E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low C_iss (2408 pF), dV/dt ruggedness (70 V/ns), and integrated body diode with t_rr = 416 ns (typ.) for hard-switched converters.

Technical Context

This device employs planar stripe silicon technology with optimized gate oxide and trench-assisted charge balancing to achieve stable 800 V breakdown while maintaining low conduction and switching losses. Its dynamic parameters - including C_oss(er) = 58 pF and C_oss(tr) = 296 pF - are calibrated for 0–480 V transitions, supporting efficient ZVS/ZCS design in resonant topologies.

The MOSFET integrates a robust intrinsic body diode rated for 15 A continuous source-drain current and 45 A pulsed operation, with controlled reverse recovery (Q_rr = 6.4 μC typ., I_RRM = 27 A) to minimize commutation stress in bridge-leg configurations used in solar inverters and motor drives.

Key Specifications

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free, RoHS-compliant), with drain-connected tab for direct heatsinking and improved thermal resistance (R_thJC = 3.6 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW48N60M2 and IXFH30N80X, SIHA17N80E-E3 delivers optimal balance of 800 V rating, low Q_g-driven switching loss, and TO-220 FULLPAK compactness - making it preferred for space-constrained, high-density 400–800 V power supplies where gate drive efficiency and layout simplicity are critical.

Availability

SIHA17N80E-E3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial induction heating systems requiring stable component supply and long-term production continuity.

Supply support for SIHA17N80E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems - emphasizing ruggedness, low FOM, and avalanche survivability over raw current density.

FAQ

What is the maximum continuous drain current rating for SIHA17N80E-E3 at 100 °C case temperature?

The SIHA17N80E-E3 has a continuous drain current rating of 4 A at T_C = 100 °C, per its Absolute Maximum Ratings table. This reflects thermal derating from the 6 A rating at 25 °C, based on a linear derating factor of 0.28 W/°C and R_thJC = 3.6 °C/W. Designers must verify junction temperature rise using actual PCB copper area and heatsink conditions before finalizing thermal design for SIHA17N80E-E3.

Does SIHA17N80E-E3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHA17N80E-E3 is fully rated for single-pulse avalanche energy (E_AS) at 353 mJ, tested per JEDEC JESD24-11 with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.0 A starting at T_J = 25 °C. This rating confirms robustness against inductive switching transients in real-world PFC and SMPS circuits - a key differentiator from non-avalanche-rated 800 V MOSFETs. The SIHA17N80E-E3 datasheet specifies this as a guaranteed parameter, not a typical value.

Can SIHA17N80E-E3 be used in synchronous rectification topologies?

No - SIHA17N80E-E3 is a standard-threshold N-channel MOSFET (V_GS(th) = 2.0–4.0 V) intended for gate-driven high-side or low-side switching, not self-driven synchronous rectification. Its body diode is optimized for hard-switched freewheeling, not low-V_SD conduction. For synchronous rectification, dedicated logic-level or dual-MOSFET synchronous rectifier ICs (e.g., Vishay SiR626DP) are required. SIHA17N80E-E3 remains appropriate for primary-side switching where its 800 V rating and low Q_g deliver clear advantages.

What is the gate-source leakage specification for SIHA17N80E-E3 at ±30 V?

At V_GS = ±30 V, the gate-source leakage current (I_GSS) for SIHA17N80E-E3 is specified as ±1 μA maximum, per its Electrical Specifications table. This low leakage supports stable gate bias in high-impedance drive circuits and ensures minimal static power loss in always-on control architectures. It also indicates high-quality gate oxide integrity - critical for long-term reliability in industrial power supplies where SIHA17N80E-E3 is commonly deployed.

How does the C_oss(er) value of 58 pF impact resonant converter design with SIHA17N80E-E3?

The effective output capacitance C_oss(er) = 58 pF (energy-related) defines the stored energy E_oss = ½ × C_oss(er) × V² that must be charged/discharged each switching cycle in resonant topologies like LLC. For SIHA17N80E-E3 operating at 480 V, this yields ~6.7 μJ per cycle - directly influencing dead-time selection, resonant frequency stability, and ZVS boundary conditions. Designers use this value - not the larger C_oss = 81 pF - to model soft-switching behavior accurately in simulations and hardware validation of SIHA17N80E-E3-based converters.