Vishay Siliconix SIHA17N80E-GE3

Overview

SIHA17N80E-GE3 from Vishay Siliconix is an 800 V, 6 A N-channel enhancement-mode power MOSFET in a Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.25 Ω (typ. at V_GS = 10 V), Q_g = 61 nC (typ.), and avalanche-rated E_AS = 353 mJ - optimized for high-voltage PFC and telecom SMPS stages.

For engineers reviewing the SIHA17N80E-GE3 datasheet, SIHA17N80E-GE3 pinout, SIHA17N80E-GE3 application, or SIHA17N80E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low C_iss = 2408 pF, dV/dt ruggedness of 70 V/ns, and body diode t_rr = 416 ns (typ.) - all critical for hard-switched 480–640 V DC-link topologies.

Technical Context

This device employs planar VDMOS technology with optimized charge distribution to achieve low conduction loss while maintaining robust switching performance under high dV/dt stress. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, and the integral body diode supports synchronous rectification and inductive flyback in continuous conduction mode.

The MOSFET's thermal resistance R_thJC = 3.6 °C/W enables high-power operation with minimal heatsink requirements, and its rated single-pulse avalanche energy (E_AS = 353 mJ) provides design margin against unclamped inductive transients in PFC boost and LLC resonant converters.

Key Specifications

Pinout & Package

Thin-Lead TO-220 FULLPAK package with isolated drain tab (D), source (S), and gate (G) leads; lead (Pb)-free and halogen-free per Vishay specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW48N65M5 and IXFH32N80X, SIHA17N80E-GE3 offers the optimal balance of 800 V rating, 0.25 Ω R_DS(on), and 61 nC Q_g for space-constrained, high-frequency PFC and telecom SMPS where both voltage margin and switching efficiency are critical.

Availability

SIHA17N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHA17N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The E Series Power MOSFETs - including SIHA17N80E-GE3 - are engineered for high-voltage, high-efficiency switching in power factor correction and telecom SMPS, emphasizing low FOM, avalanche ruggedness, and thermal robustness.

FAQ

What is the maximum continuous drain current rating for SIHA17N80E-GE3 at 100 °C case temperature?

The SIHA17N80E-GE3 has a continuous drain current rating of 4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 6 A rating at 25 °C case temperature, based on a linear derating factor of 0.28 W/°C and R_thJC = 3.6 °C/W. Designers must verify PCB copper area and heatsinking to sustain this current without exceeding T_J = 150 °C.

Does SIHA17N80E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHA17N80E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 353 mJ, tested per JEDEC JESD24-11 with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.0 A starting at T_J = 25 °C. This rating applies to unclamped inductive switching events and is not repetitive; designers must ensure system-level protection limits repetitive stress to avoid cumulative degradation of the SIHA17N80E-GE3.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA17N80E-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the integral body diode in SIHA17N80E-GE3 is 416 ns, measured at T_J = 25 °C with I_F = I_S = 8.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This parameter directly impacts switching loss and EMI in half-bridge and synchronous rectifier topologies; actual t_rr increases with junction temperature and decreases with higher dI/dt.

Can SIHA17N80E-GE3 be used with 5 V logic-level gate drivers?

No, SIHA17N80E-GE3 is not a logic-level MOSFET; its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) = 0.25 Ω. A 5 V driver will result in significantly elevated R_DS(on) (>1 Ω) and excessive conduction loss. The SIHA17N80E-GE3 must be driven with a minimum 10 V gate-source voltage, typically from a dedicated gate driver IC such as the UCC27611 or IRS21844.

What is the thermal resistance from junction to case (R_thJC) for SIHA17N80E-GE3, and how does it impact heatsink selection?

The maximum junction-to-case thermal resistance (R_thJC) for SIHA17N80E-GE3 is 3.6 °C/W, enabling efficient heat transfer from the die to the heatsink via the drain-connected metal tab. When dissipating 25 W, this results in a 90 °C temperature rise from case to junction - so a heatsink must maintain T_C ≤ 60 °C to keep T_J ≤ 150 °C. Mounting torque must be 0.6 Nm (M3 screw) to ensure consistent thermal contact without tab deformation.