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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA180N60E-GE3

Name: SIHA180N60E-GE3
Brand: Vishay Siliconix
SKU: SIHA180N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA180N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA180N60E-GE3.pdf

Description:: MOSFET N-CH 600V 19A TO220

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Product details

Overview

SIHA180N60E-GE3 from Vishay Siliconix is a 600 V, 9 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.155 Ω (typ) at V_GS = 10 V, Q_g = 22 nC (typ), and avalanche-rated E_AS = 111 mJ - designed for high-efficiency switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHA180N60E-GE3 datasheet, SIHA180N60E-GE3 pinout, SIHA180N60E-GE3 application, or SIHA180N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced C_oss(er) = 41 pF, 100 V/ns dv/dt capability, and rated operation up to T_J = 150 °C in hard-switched SMPS topologies.

Technical Context

This 4th-generation E-series MOSFET employs planar VDMOS technology optimized for high-voltage, medium-current applications requiring robust unclamped inductive switching performance. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device integrates a fast-recovery body diode (t_rr = 282–564 ns, Q_rr = 3.6–7.2 μC) and exhibits low effective output capacitance (C_oss(er) = 41 pF), enabling reduced switching losses in continuous conduction mode (CCM) PFC and LLC resonant converters operating up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin in industrial PFC and server PSUs
R_DS(on) typ	0.155 Ω @ V_GS = 10 V - enables ≤1.4 W conduction loss at 9.5 A ID, critical for thermal management in compact enclosures
Q_g max	33 nC - determines gate drive power requirement; compatible with common 1–2 A peak gate drivers
E_AS	111 mJ - guarantees single-pulse avalanche ruggedness during transient overloads without failure
C_oss(er)	41 pF - reduces energy loss (½ × C × V²) during hard-switching transitions, improving efficiency above 60 kHz
t_r/t_f	49/23 ns (typ) - supports fast switching with minimal overlap loss when paired with optimized gate resistance (R_g = 9.1 Ω)
T_J max	+150 °C - allows operation in high-ambient environments such as enclosed telecom rectifiers or solar inverters

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK (lead-free, halogen-free); dimensions per Vishay Doc. #62649: D = 8.5 mm, d1 = 15.0 mm, E = 10.0 mm, L = 13.6 mm; drain-connected tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold 3.0–5.0 V ensures compatibility with standard PWM controllers
D (Drain)	High-side power terminal	Connected to internal die backside; electrically tied to metal tab - requires insulated mounting in non-isolated topologies
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance connection critical for dv/dt stability

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.42 Ω·nC - directly reduces total switching + conduction loss in high-frequency SMPS
Avalanche energy rating	111 mJ (single-pulse) - eliminates need for external snubbers in inductive load switching
Body diode t_rr	282 ns (typ) - minimizes reverse recovery charge injection in synchronous rectification and bidirectional topologies
dv/dt immunity	100 V/ns (T_J = 125 °C) - prevents false turn-on in high-dv/dt bridge-leg configurations
Thermal resistance R_thJC	3.8 °C/W - enables >25 W power dissipation with modest heatsinking (e.g., 15 cm² aluminum fin)

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3.3 kW distributed power architecture (DPA) units with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 100–150 kHz with zero-voltage transition assistance. Use Value: Low C_oss(er) and 111 mJ E_AS ensure reliable soft-start and overload recovery without derating.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems delivering 2.5 kW continuous output. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) with 65 kHz switching frequency. Use Value: 0.155 Ω R_DS(on) limits conduction loss to <1.5 W at full load, reducing heatsink size by 30 % vs. legacy 0.22 Ω devices.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters converting 600–1000 V DC to 230 V AC via two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter legs, driven by isolated gate drivers. Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during high-slew-rate commutation events.	Use Scenario: Output stage in 7.5 kW servo drive powering permanent magnet synchronous motors (PMSM). IC Role / Device Role / Timing Role: Half-bridge low-side switch in three-phase inverter, conducting 19 A pulsed current with 100 A/μs di/dt. Use Value: Body diode Q_rr = 3.6 μC (typ) reduces shoot-through risk and EMI during freewheeling intervals.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3.3 kW distributed power architecture (DPA) units with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 100–150 kHz with zero-voltage transition assistance.

Use Value: Low C_oss(er) and 111 mJ E_AS ensure reliable soft-start and overload recovery without derating.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems delivering 2.5 kW continuous output.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) with 65 kHz switching frequency.

Use Value: 0.155 Ω R_DS(on) limits conduction loss to <1.5 W at full load, reducing heatsink size by 30 % vs. legacy 0.22 Ω devices.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters converting 600–1000 V DC to 230 V AC via two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter legs, driven by isolated gate drivers.

Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during high-slew-rate commutation events.

Use Scenario: Output stage in 7.5 kW servo drive powering permanent magnet synchronous motors (PMSM).

IC Role / Device Role / Timing Role: Half-bridge low-side switch in three-phase inverter, conducting 19 A pulsed current with 100 A/μs di/dt.

Use Value: Body diode Q_rr = 3.6 μC (typ) reduces shoot-through risk and EMI during freewheeling intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60ZFP	R_DS(on) = 0.72 Ω (higher), Q_g = 32 nC, no E_AS rating specified	Limited to lower-power (<500 W) flyback and resonant converters due to higher conduction loss	Choose STP10NK60ZFP only for cost-sensitive, low-frequency (<50 kHz), low-current designs where avalanche ruggedness is not required.
IXFH12N60P	R_DS(on) = 0.65 Ω, Q_g = 38 nC, E_AS = 130 mJ, TO-247 package	Higher thermal mass but larger footprint; better suited for forced-air-cooled 3 kW+ systems	Select IXFH12N60P when board space permits TO-247 and higher avalanche margin is prioritized over compact TO-220 FULLPAK integration.

Compared with STP10NK60ZFP and IXFH12N60P, SIHA180N60E-GE3 delivers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche capability in a thermally efficient, surface-mount-compatible TO-220 FULLPAK - making it preferred for space-constrained, high-reliability 1–3 kW industrial and telecom power stages.

Availability

SIHA180N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHA180N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, power density, and ruggedness.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching applications including telecom power, industrial motor drives, and renewable energy systems - engineered for low FOM and robust avalanche operation.

FAQ

What is the maximum continuous drain current rating for SIHA180N60E-GE3 at 100 °C case temperature?

The SIHA180N60E-GE3 has a continuous drain current rating of 6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package and ensures safe operation under sustained high-temperature conditions typical in enclosed power supplies. The SIHA180N60E-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHA180N60E-GE3 have a fully rated avalanche energy specification?

Yes, the SIHA180N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 111 mJ, tested under standardized conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2.8 A). This rating is guaranteed per datasheet and enables reliable operation during inductive switching transients without external protection circuitry. The SIHA180N60E-GE3 achieves this through optimized cell layout and epitaxial structure in Vishay's 4th-generation E series.

What is the gate threshold voltage range for SIHA180N60E-GE3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for SIHA180N60E-GE3 is specified from 3.0 V to 5.0 V at I_D = 250 μA. This range ensures robust turn-on with standard 10 V gate drivers while providing noise margin against spurious triggering. Because the SIHA180N60E-GE3 is not a logic-level device, it requires ≥8 V gate drive for full enhancement - confirming that 10 V is the recommended minimum for achieving the rated R_DS(on) of 0.155 Ω.

Can SIHA180N60E-GE3 be used in place of older generation 600 V MOSFETs like the IRFP460?

The SIHA180N60E-GE3 offers significant improvements over IRFP460, including lower R_DS(on) (0.155 Ω vs. 0.27 Ω), reduced Q_g (22 nC vs. 180 nC), and guaranteed E_AS rating (111 mJ vs. unspecified). However, it is not a direct pin-to-pin replacement due to different thermal pad configuration and gate drive timing characteristics. System-level validation of switching waveforms and thermal performance is required before substituting SIHA180N60E-GE3 into legacy IRFP460 designs.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode in SIHA180N60E-GE3?

The typical reverse recovery charge (Q_rr) of the SIHA180N60E-GE3 body diode is 3.6 μC, measured at T_J = 25 °C, I_F = I_S = 9.5 A, di/dt = 100 A/μs, and V_R = 25 V. This low Q_rr value contributes to reduced switching losses and EMI in hard-commutated topologies. The SIHA180N60E-GE3's Q_rr is tightly controlled via process optimization, supporting reliable operation in PFC and half-bridge freewheeling applications.

SIHA180N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1085 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA180N60E-GE3 FAQ

1.How can I place an order for SIHA180N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA180N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA180N60E-GE3 reliable?

The price and inventory of SIHA180N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA180N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA180N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA180N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA180N60E-GE3?

SIHA180N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA180N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA180N60E-GE3?

For technical support, including SIHA180N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA180N60E-GE3 requirements.

6.How does Aetrix verify that SIHA180N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA180N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA180N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA180N60E-GE3?

All SIHA180N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA180N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA180N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHA180N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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