Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA186N60EF-GE3

Name: SIHA186N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHA186N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHA186N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA186N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 8.4A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,694

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHA186N60EF-GE3 from Vishay Siliconix is a 600 V, 8.4 A N-channel enhancement-mode power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.168 Ω (typ. at V_GS = 10 V), Q_g = 21 nC (typ.), and fast body diode with t_rr = 111 ns - optimized for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHA186N60EF-GE3 datasheet, SIHA186N60EF-GE3 pinout, SIHA186N60EF-GE3 application, or SIHA186N60EF-GE3 equivalent, key selection criteria include its 600 V V_DS rating, low Co(er) = 40 pF for reduced switching loss, avalanche-rated E_AS = 24 mJ, and thermal resistance R_thJC = 3.8 °C/W for high-power density designs.

Technical Context

This EF Series MOSFET employs Vishay's 4th-generation E-series technology to minimize conduction and switching losses simultaneously. Its low figure-of-merit (R_DS(on) × Q_g) of ~3.55 Ω·nC and reduced effective output capacitance (Co(er) = 40 pF) enable high-frequency operation up to 200 kHz in hard-switched topologies.

The integrated fast-recovery body diode (t_rr = 111 ns, Q_rr = 0.6 μC) supports ZVS-capable PFC and synchronous rectification in LLC resonant converters. The device is rated for repetitive unclamped inductive switching (UIS) with E_AS = 24 mJ, ensuring robustness under transient overloads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for telecom/server PFC stages
R_DS(on) typ	0.168 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 9.5 A continuous drain current
Q_g max	32 nC - determines gate drive power requirement and switching speed in 100–200 kHz applications
t_rr	111 ns (typ.) - reduces diode recovery loss and EMI in critical conduction mode (CRM) PFC
E_AS	24 mJ - ensures reliable operation during inductive turn-off transients without external snubbers
R_thJC	3.8 °C/W - allows >25 W dissipation with standard heatsink mounting at T_C = 100 °C
I_D cont @ T_C=100°C	5.3 A - defines usable current capability in thermally constrained industrial enclosures

Pinout & Package

SIHA186N60EF-GE3 is housed in a lead (Pb)-free and halogen-free Thin-Lead TO-220 FULLPAK package (package outline per Doc. #62649), with drain-connected tab for direct heatsinking and optimized thermal path from junction to case.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; threshold voltage V_GS(th) = 3.0–5.0 V ensures noise immunity in noisy power environments
D (Drain)	High-side power switch node	Internally connected to metal tab - must be electrically isolated from heatsink unless system ground referenced
S (Source)	Power return and reference node	Serves as local ground for gate driver; low-inductance layout required to minimize dv/dt-induced false turn-on

Key Features

Feature	Design Value
4th-generation E-series technology	Delivers industry-leading R_DS(on) × Q_g FOM of ~3.55 Ω·nC for balanced efficiency across load range
Fast body diode (t_rr = 111 ns)	Enables zero-voltage switching in CRM PFC and reduces reverse recovery loss by >40 % vs. standard MOSFETs
Avalanche energy rating (E_AS = 24 mJ)	Eliminates need for external clamping circuits in inductive load switching applications like motor drives
Low Co(er) = 40 pF	Reduces capacitive switching loss and improves efficiency in high-frequency (>150 kHz) hard-switched converters
Thin-Lead TO-220 FULLPAK	Provides 30 % lower R_thJC than standard TO-220, enabling higher power density without derating

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC stage operating at 65–100 kHz with 400 V DC bus and 2–5 kW output. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles full input current with minimal conduction loss. Use Value: Low R_DS(on) and fast body diode reduce total losses by 12–15 % versus prior-gen 600 V MOSFETs, improving system efficiency to >96 %.	Use Scenario: High-density 48 V output rectifier with active clamp forward or phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Primary-side switch handling 100–200 kHz switching; withstands 600 V blocking during dead-time intervals. Use Value: 24 mJ UIS rating and 3.8 °C/W R_thJC allow sustained operation at 5.3 A @ 100 °C case temperature without thermal throttling.
Solar PV Inverter DC-DC Stage	Industrial Motor Drive Inverter
Use Scenario: Isolated DC-DC stage stepping up PV array voltage (200–1000 V) to 700–800 V DC link for inverter stage. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) or LLC resonant converter; operates with soft-switching constraints. Use Value: Low Co(tr) = 247 pF and controlled Q_gd/Q_gs ratio support precise ZVS timing control and reduce voltage overshoot during turn-off.	Use Scenario: 3-phase IGBT gate driver auxiliary supply or regenerative braking chopper in 5–10 kW servo drives. IC Role / Device Role / Timing Role: Fast-switching chopper controlling energy dump into brake resistor during deceleration events. Use Value: 43 A pulsed drain current (I_DM) and 100 V/ns dv/dt rating ensure reliable operation during rapid bus voltage transients.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC stage operating at 65–100 kHz with 400 V DC bus and 2–5 kW output.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles full input current with minimal conduction loss.

Use Value: Low R_DS(on) and fast body diode reduce total losses by 12–15 % versus prior-gen 600 V MOSFETs, improving system efficiency to >96 %.

Use Scenario: High-density 48 V output rectifier with active clamp forward or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side switch handling 100–200 kHz switching; withstands 600 V blocking during dead-time intervals.

Use Value: 24 mJ UIS rating and 3.8 °C/W R_thJC allow sustained operation at 5.3 A @ 100 °C case temperature without thermal throttling.

Solar PV Inverter DC-DC Stage

Industrial Motor Drive Inverter

Use Scenario: Isolated DC-DC stage stepping up PV array voltage (200–1000 V) to 700–800 V DC link for inverter stage.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) or LLC resonant converter; operates with soft-switching constraints.

Use Value: Low Co(tr) = 247 pF and controlled Q_gd/Q_gs ratio support precise ZVS timing control and reduce voltage overshoot during turn-off.

Use Scenario: 3-phase IGBT gate driver auxiliary supply or regenerative braking chopper in 5–10 kW servo drives.

IC Role / Device Role / Timing Role: Fast-switching chopper controlling energy dump into brake resistor during deceleration events.

Use Value: 43 A pulsed drain current (I_DM) and 100 V/ns dv/dt rating ensure reliable operation during rapid bus voltage transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.065 Ω (lower), Q_g = 65 nC (higher), TO-247 package	Better conduction loss but higher gate drive loss; requires larger PCB footprint	Preferred where thermal headroom exists and peak efficiency at light load is critical
IXFH30N60X	R_DS(on) = 0.15 Ω, Q_g = 42 nC, TO-247 package, no specified t_rr	Higher switching loss due to slower body diode; lacks avalanche rating	Acceptable for non-critical SMPS where cost is prioritized over reliability under overload

Compared with STW48N60M2 and IXFH30N60X, SIHA186N60EF-GE3 offers superior thermal performance (R_thJC = 3.8 °C/W vs. ≥4.5 °C/W), smaller TO-220 FULLPAK footprint, and guaranteed fast-body-diode performance - making it optimal for space-constrained, high-reliability 600 V power stages.

Availability

SIHA186N60EF-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHA186N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The EF Series, including SIHA186N60EF-GE3, was developed specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for SIHA186N60EF-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHA186N60EF-GE3 is 5.3 A when the case temperature (T_C) is 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 8.4 A rating at T_C = 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit. SIHA186N60EF-GE3 maintains stable R_DS(on) performance across this range due to its positive V_DS temperature coefficient.

Does SIHA186N60EF-GE3 have an avalanche-rated structure, and what is its EAS value?

Yes, SIHA186N60EF-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 24 mJ, tested under standardized conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.3 A). This rating confirms ruggedness against inductive turn-off transients without external protection. SIHA186N60EF-GE3 leverages this feature in motor drive choppers and PFC boost stages where voltage spikes are common.

What is the typical reverse recovery time (t_rr) of the body diode in SIHA186N60EF-GE3, and why does it matter?

The typical reverse recovery time (t_rr) of the integral body diode in SIHA186N60EF-GE3 is 111 ns, measured at T_J = 25 °C, I_F = 9.5 A, di/dt = 100 A/μs, and V_R = 400 V. This fast recovery minimizes reverse recovery loss and associated EMI in critical conduction mode (CRM) PFC and synchronous rectification. SIHA186N60EF-GE3 achieves this via optimized epitaxial layer design and charge compensation.

Can SIHA186N60EF-GE3 be used in place of standard TO-220 MOSFETs without PCB layout changes?

SIHA186N60EF-GE3 uses the Thin-Lead TO-220 FULLPAK package, which shares the same outline and mounting hole pattern as standard TO-220 but features thinner leads and internal drain-tab connection. Mechanical compatibility allows drop-in replacement on existing TO-220 footprints; however, thermal pad isolation and gate loop inductance must be verified. SIHA186N60EF-GE3 benefits from lower R_thJC, so thermal performance may improve without layout change.

What gate voltage is required to fully enhance SIHA186N60EF-GE3, and what is its threshold range?

SIHA186N60EF-GE3 is fully enhanced at V_GS = 10 V, where R_DS(on) is specified at 0.168 Ω (typ.). Its gate-source threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, ensuring reliable turn-on with standard 10 V gate drivers while maintaining noise immunity. SIHA186N60EF-GE3 does not support logic-level (5 V) drive - using V_GS < 8 V risks incomplete enhancement and excessive conduction loss.

SIHA186N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 193mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1081 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA186N60EF-GE3 FAQ

1.How can I place an order for SIHA186N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA186N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA186N60EF-GE3 reliable?

The price and inventory of SIHA186N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA186N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA186N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA186N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA186N60EF-GE3?

SIHA186N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA186N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA186N60EF-GE3?

For technical support, including SIHA186N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA186N60EF-GE3 requirements.

6.How does Aetrix verify that SIHA186N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA186N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA186N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA186N60EF-GE3?

All SIHA186N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA186N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA186N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHA186N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …