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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA18N60E-E3

Name: SIHA18N60E-E3
Brand: Vishay Siliconix
SKU: SIHA18N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA18N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA18N60E-E3.pdf

Description:: MOSFET N-CHANNEL 600V 18A TO220

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Product details

Overview

SIHA18N60E-E3 from Vishay Siliconix is a 600 V, 18 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.176 Ω (typ) at V_GS = 10 V, Q_g = 46 nC (typ), and avalanche-rated E_AS = 204 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHA18N60E-E3 datasheet, SIHA18N60E-E3 pinout, SIHA18N60E-E3 application, or SIHA18N60E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, reduced switching losses, and robust UIS capability - all validated under TJ = 150 °C continuous operation and pulsed ID = 45 A conditions.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and gate oxide design to achieve balanced conduction and switching performance. Its dynamic parameters - C_iss = 1640 pF, C_oss = 85 pF, and C_rss = 6 pF - support fast, low-loss hard-switching in 480 V DC bus topologies.

The integral body diode delivers V_SD = 1.2 V (typ) at I_S = 12 A and t_rr = 300 ns (typ) with Q_rr = 4 μC, enabling reliable freewheeling in continuous-conduction-mode PFC and resonant LLC converters without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~560 V DC bus with 10 % margin for voltage spikes in telecom SMPS
R_DS(on) typ	0.176 Ω at V_GS = 10 V, I_D = 9 A - enables <1.4 W conduction loss at 18 A continuous drain current
Q_g max	92 nC - reduces gate drive power and allows use of lower-cost, lower-current gate drivers
E_AS	204 mJ - withstands unclamped inductive switching events up to I_AS = 3.8 A without failure
t_r/t_f	24–48 ns - supports >200 kHz switching frequency with minimal overlap loss in hard-switched topologies
R_thJC	3.7 °C/W - enables 34 W power dissipation with ≤125 °C case temperature rise above ambient

Pinout & Package

Thin-Lead TO-220 FULLPAK package: 3-pin, isolated drain tab, lead (Pb)-free, RoHS-compliant, with mechanical dimensions per Vishay Doc. #62649 (Rev. D, 28-Dec-2020). Mounting torque: 0.6 N·m for M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal / heat sink interface	Electrically connected to metal tab; requires insulated mounting or thermal pad; carries full load current and dissipates majority of heat
Source	Power return path / reference node for gate drive	Common connection point for source current and gate driver ground; critical for minimizing common-source inductance in high-dI/dt switching
Gate	Control input for channel modulation	High-impedance MOS control node; requires low-inductance gate loop and appropriate R_g (9.1 Ω typical) to balance switching speed and ringing

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	16.2 Ω·nC - directly reduces total power loss in both conduction and switching phases
Avalanche energy rating (UIS)	204 mJ - eliminates need for external snubbers in inductive load switching and improves system robustness
Ultra-low gate charge (Q_g)	46 nC typ - cuts gate driver power consumption by >40 % vs. legacy 600 V MOSFETs with similar R_DS(on)
Low input capacitance (C_iss)	1640 pF - minimizes Miller effect and improves gate drive efficiency in high-frequency designs

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3 kW front-end AC/DC converters with active PFC and LLC resonant stages. IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 480 V DC bus and delivering 18 A continuous output. Use Value: Low R_DS(on) and Q_g reduce thermal stress and improve efficiency beyond 96 % at full load, meeting 80 PLUS Titanium requirements.	Use Scenario: Output rectification and isolation in -48 V distributed power architecture (DPA) systems. IC Role / Device Role / Timing Role: Synchronous rectifier and primary switch in dual-active-bridge (DAB) isolated DC/DC modules. Use Value: Fast t_r/t_f and low C_rss enable precise zero-voltage switching (ZVS) timing control, reducing EMI and improving power density.
PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-reliability 600 V switch in three-phase inverter bridge legs operating at 16 kHz PWM. Use Value: Avalanche rating ensures survivability during grid fault transients; R_thJC = 3.7 °C/W supports forced-air cooling without heatsink oversizing.	Use Scenario: Inverter stage in 5–10 kW variable-frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Main power switch in IGBT replacement topology using discrete MOSFET half-bridges. Use Value: Body diode t_rr = 300 ns and Q_rr = 4 μC minimize commutation losses during regenerative braking, improving overall drive efficiency.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3 kW front-end AC/DC converters with active PFC and LLC resonant stages.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 480 V DC bus and delivering 18 A continuous output.

Use Value: Low R_DS(on) and Q_g reduce thermal stress and improve efficiency beyond 96 % at full load, meeting 80 PLUS Titanium requirements.

Use Scenario: Output rectification and isolation in -48 V distributed power architecture (DPA) systems.

IC Role / Device Role / Timing Role: Synchronous rectifier and primary switch in dual-active-bridge (DAB) isolated DC/DC modules.

Use Value: Fast t_r/t_f and low C_rss enable precise zero-voltage switching (ZVS) timing control, reducing EMI and improving power density.

PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-reliability 600 V switch in three-phase inverter bridge legs operating at 16 kHz PWM.

Use Value: Avalanche rating ensures survivability during grid fault transients; R_thJC = 3.7 °C/W supports forced-air cooling without heatsink oversizing.

Use Scenario: Inverter stage in 5–10 kW variable-frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Main power switch in IGBT replacement topology using discrete MOSFET half-bridges.

Use Value: Body diode t_rr = 300 ns and Q_rr = 4 μC minimize commutation losses during regenerative braking, improving overall drive efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N60DM6	R_DS(on) = 0.18 Ω (typ), Q_g = 42 nC, C_iss = 1500 pF, TO-220FP package	Lower Q_g but slightly higher R_DS(on); same avalanche rating (E_AS = 200 mJ)	Preferred where gate drive strength is limited; verify thermal interface compatibility due to different tab geometry
IXTH18N60L2	R_DS(on) = 0.19 Ω (typ), Q_g = 52 nC, C_iss = 1800 pF, TO-247 package	Higher R_DS(on) and Q_g, larger footprint; superior R_thJC = 2.5 °C/W	Chosen when higher power derating or extended thermal margin is required; not drop-in due to TO-247 vs. TO-220 FULLPAK

Compared with STP18N60DM6 and IXTH18N60L2, SIHA18N60E-E3 offers the lowest R_DS(on) × Q_g FOM among the three, making it optimal for space-constrained, high-frequency PFC and SMPS designs where conduction and switching loss trade-offs are tightly balanced.

Availability

SIHA18N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and PV inverter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing sites.

Supply support for SIHA18N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The E Series Power MOSFET product line targets high-efficiency, high-voltage power conversion systems - designed specifically for telecom, server, industrial, and renewable energy applications demanding low loss, high ruggedness, and consistent parametric stability over temperature and lifetime.

FAQ

What is the maximum continuous drain current rating for SIHA18N60E-E3 at TC = 100 °C?

The SIHA18N60E-E3 supports 11 A continuous drain current at case temperature (T_C) = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Thin-Lead TO-220 FULLPAK package and ensures safe operation within its R_thJC = 3.7 °C/W thermal resistance envelope. At T_C = 25 °C, the rating increases to 18 A.

Does SIHA18N60E-E3 have an integrated body diode, and what are its key recovery characteristics?

Yes, SIHA18N60E-E3 includes an integral reverse p–n junction body diode. Its key recovery specs are t_rr = 300 ns (typ), Q_rr = 4 μC (typ), and I_RRM = 26 A (max), measured at T_J = 25 °C, I_F = 9 A, dI/dt = 100 A/μs, and V_R = 25 V. These values enable reliable freewheeling in continuous-conduction-mode PFC and motor drive applications without external diode supplementation.

What is the gate threshold voltage range for SIHA18N60E-E3, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for SIHA18N60E-E3 is specified from 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This range confirms standard-level (not logic-level) drive requirements, mandating ≥10 V gate drive for full enhancement. Designers must ensure gate drive rails exceed 12 V to maintain margin against noise and ensure robust turn-on across temperature and process variation.

Is SIHA18N60E-E3 suitable for avalanche operation, and what is its rated single-pulse energy?

Yes, SIHA18N60E-E3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 204 mJ, tested per condition: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.8 A, starting T_J = 25 °C. This rating validates its use in circuits subject to inductive kickback, such as relay drivers and flyback transformer primaries.

What is the maximum allowable dV/dt rate for SIHA18N60E-E3, and why is this parameter important?

The SIHA18N60E-E3 specifies a maximum drain-source voltage slope (dV/dt) of 70 V/ns at T_J = 125 °C. This parameter defines the device's immunity to false turn-on caused by capacitive coupling during high-speed switching. Exceeding this limit risks parasitic turn-on, leading to shoot-through and catastrophic failure - thus proper gate resistor selection and layout minimization of common-source inductance are essential.

SIHA18N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 202mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA18N60E-E3 FAQ

1.How can I place an order for SIHA18N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA18N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA18N60E-E3 reliable?

The price and inventory of SIHA18N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA18N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHA18N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA18N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA18N60E-E3?

SIHA18N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA18N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA18N60E-E3?

For technical support, including SIHA18N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA18N60E-E3 requirements.

6.How does Aetrix verify that SIHA18N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHA18N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA18N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHA18N60E-E3?

All SIHA18N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA18N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA18N60E-E3 part is unused and in its original packaging.

Return procedure for SIHA18N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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