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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHA18N60E-GE3

Name: SIHA18N60E-GE3
Brand: Vishay Siliconix
SKU: SIHA18N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHA18N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHA18N60E-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHA18N60E-GE3 from Vishay Siliconix is a 600 V, 18 A N-channel enhancement-mode Power MOSFET in Thin-Lead TO-220 FULLPAK package, featuring R_DS(on) = 0.176 Ω (typ.) at V_GS = 10 V, Q_g = 46 nC (typ.), and avalanche-rated E_AS = 204 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHA18N60E-GE3 datasheet, SIHA18N60E-GE3 pinout, SIHA18N60E-GE3 application, or SIHA18N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, robust UIS capability, and thermal performance with R_thJC = 3.7 °C/W - critical for high-power density and reliability in continuous conduction mode topologies.

Technical Context

This device employs planar stripe silicon technology with optimized cell pitch and gate oxide design to achieve balanced switching speed and conduction loss. Its low C_iss (1640 pF typ.) and C_oss (85 pF typ.) support fast turn-on/turn-off with reduced Miller effect, while the integral body diode exhibits t_rr = 300 ns and Q_rr = 4 μC at 25 °C - enabling hard-switched operation in boost and LLC resonant converters.

The MOSFET is rated for continuous drain current up to 18 A at T_C = 25 °C and derates linearly at 0.27 W/°C above 100 °C case temperature. Its V_GS(th) range of 2–4 V ensures stable turn-on margin across temperature, and dV/dt immunity of 70 V/ns at T_J = 125 °C supports noise-resilient operation in high-dv/dt environments like motor drives and solar inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin for transient overvoltage in industrial and telecom SMPS.
R_DS(on) typ.	0.176 Ω at V_GS = 10 V, I_D = 9 A - enables <1.4 W conduction loss at 10 A, reducing heatsink requirements in 1–3 kW PFC stages.
Q_g max	92 nC - allows efficient gate drive with standard 1–2 A peak drivers; low Q_gd/Q_g ratio (18/92) improves switching controllability.
E_AS	204 mJ (single-pulse) - withstands unclamped inductive switching events without failure, enhancing system robustness in motor control and welding.
R_thJC	3.7 °C/W - enables 34 W power dissipation at ΔT = 125 °C, supporting compact thermal design in forced-air-cooled enclosures.
C_iss	1640 pF at V_DS = 100 V - reduces gate drive power loss and improves high-frequency efficiency in >100 kHz converters.
t_r/t_f	24–48 ns typical - supports clean zero-voltage switching (ZVS) transitions in resonant topologies with minimal switching loss.

Pinout & Package

SIHA18N60E-GE3 uses the Thin-Lead TO-220 FULLPAK package (JEDEC TO-220AB variant), with 3 leads: Drain (D), Source (S), and Gate (G). The package features an isolated metal tab (Drain-connected) and thin leads for improved solder joint reliability and thermal transfer to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power terminal	Connected to internal die backside; electrically tied to metal tab - must be insulated from chassis unless referenced to system ground.
S (Source)	Power return and reference node	Common connection point for gate driver return, current sense resistor, and low-side switching path - defines local ground reference for gate drive loop.
G (Gate)	Control input	High-impedance MOS gate requiring low-inductance routing; sensitive to ringing - requires RC snubber or gate resistor (9.1 Ω typical) for controlled switching.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	16.2 Ω·nC - delivers superior power efficiency in both conduction and switching domains versus legacy 600 V MOSFETs.
Avalanche energy rating (UIS)	204 mJ single-pulse - eliminates need for external clamping circuits in inductive load switching, lowering BOM cost and layout complexity.
Ultra-low gate charge	Q_g = 46 nC typ. - reduces gate driver power consumption and enables use of smaller, lower-cost drivers in high-volume power supplies.
Enhanced body diode performance	t_rr = 300 ns, Q_rr = 4 μC - minimizes reverse recovery loss and associated voltage overshoot during commutation in bridge configurations.
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - meets environmental compliance requirements for global industrial and telecom equipment.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW, 94 % efficient AC-DC front-end with active PFC and LLC resonant converter. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage and half-bridge LLC primary, operating at 100–300 kHz. Use Value: Low R_DS(on) and Q_g reduce total losses by ~1.2 W per device vs. legacy 600 V MOSFETs, improving thermal margin and power density.	Use Scenario: 48 V output rectifier module in -48 V telecom systems with wide input range (85–264 VAC) and high reliability demand. IC Role / Device Role / Timing Role: Main switch in interleaved PFC and phase-shifted full-bridge DC-DC stage, handling 15–20 A RMS current. Use Value: Avalanche rating and 150 °C T_J rating ensure sustained operation under line surges and overload conditions without derating.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC link switching in string inverters (3–5 kW) with transformerless topology and bipolar modulation. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, subject to repetitive 600 V blocking and fast dv/dt transitions. Use Value: 70 V/ns dV/dt immunity and low C_oss prevent false turn-on and reduce EMI generation in high-frequency PWM operation.	Use Scenario: Inverter leg switch in 5–7.5 HP variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz PWM inverters, leveraging low conduction loss and fast switching for reduced thermal stress. Use Value: R_thJC = 3.7 °C/W and 18 A continuous rating allow direct heatsink mounting without additional thermal interface layers in compact enclosures.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW, 94 % efficient AC-DC front-end with active PFC and LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage and half-bridge LLC primary, operating at 100–300 kHz.

Use Value: Low R_DS(on) and Q_g reduce total losses by ~1.2 W per device vs. legacy 600 V MOSFETs, improving thermal margin and power density.

Use Scenario: 48 V output rectifier module in -48 V telecom systems with wide input range (85–264 VAC) and high reliability demand.

IC Role / Device Role / Timing Role: Main switch in interleaved PFC and phase-shifted full-bridge DC-DC stage, handling 15–20 A RMS current.

Use Value: Avalanche rating and 150 °C T_J rating ensure sustained operation under line surges and overload conditions without derating.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC link switching in string inverters (3–5 kW) with transformerless topology and bipolar modulation.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, subject to repetitive 600 V blocking and fast dv/dt transitions.

Use Value: 70 V/ns dV/dt immunity and low C_oss prevent false turn-on and reduce EMI generation in high-frequency PWM operation.

Use Scenario: Inverter leg switch in 5–7.5 HP variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz PWM inverters, leveraging low conduction loss and fast switching for reduced thermal stress.

Use Value: R_thJC = 3.7 °C/W and 18 A continuous rating allow direct heatsink mounting without additional thermal interface layers in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	R_DS(on) = 0.22 Ω (typ.), Q_g = 65 nC, TO-247 package, Zener-protected gate	Higher conduction loss and larger footprint; better gate ruggedness but slower switching	Prefer when gate protection against transients is prioritized over efficiency in lower-frequency (<60 kHz) industrial drives.
IPP60R190C7	R_DS(on) = 0.19 Ω (typ.), Q_g = 39 nC, Superjunction CoolMOS™, TO-220FP	Lower Q_g but higher R_DS(on); slightly better E_AS (220 mJ), same package outline	Choose when minimizing gate drive loss dominates over conduction loss - e.g., in digitally controlled, variable-frequency PFC.

Compared with STW20NK60Z and IPP60R190C7, SIHA18N60E-GE3 offers the best balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness in a cost-effective TO-220 FULLPAK - making it optimal for high-volume, thermally constrained telecom and server power designs.

Availability

SIHA18N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHA18N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and application-specific optimization.

The E Series Power MOSFET product line targets high-efficiency switch-mode power conversion, delivering low R_DS(on) × Q_g FOM and robust avalanche capability for telecom, server, industrial, and renewable energy applications.

FAQ

What is the maximum continuous drain current rating for SIHA18N60E-GE3 at 100 °C case temperature?

The SIHA18N60E-GE3 has a continuous drain current rating of 11 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects linear derating from 18 A at 25 °C using the 0.27 W/°C factor, ensuring safe operation within thermal limits under real-world heatsink conditions. The SIHA18N60E-GE3 maintains stable R_DS(on) up to 150 °C junction temperature.

Does SIHA18N60E-GE3 have avalanche energy rating, and what is its value?

Yes, the SIHA18N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 204 mJ, tested per JEDEC JESD24-1. This rating is confirmed in the Absolute Maximum Ratings table and validated under standardized test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.8 A). The SIHA18N60E-GE3 can safely absorb this energy without degradation.

What is the gate-source threshold voltage range for SIHA18N60E-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHA18N60E-GE3 is specified as 2–4 V at V_DS = V_GS and I_D = 250 μA, per the Electrical Characteristics table. This range ensures reliable turn-on with standard 10 V gate drive while providing sufficient margin against spurious conduction due to noise or leakage. The SIHA18N60E-GE3 does not qualify as a logic-level MOSFET.

Is SIHA18N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHA18N60E-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. Its "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU. The SIHA18N60E-GE3 meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly.

What is the thermal resistance from junction to case (R_thJC) for SIHA18N60E-GE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHA18N60E-GE3 is 3.7 °C/W, as listed in the Thermal Resistance Ratings table. This value is measured from the silicon die to the metal tab (Drain terminal) and is critical for calculating junction temperature rise in thermal design. The SIHA18N60E-GE3 achieves this performance via optimized die attach and TO-220 FULLPAK package construction.

SIHA18N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 202mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHA18N60E-GE3 FAQ

1.How can I place an order for SIHA18N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHA18N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHA18N60E-GE3 reliable?

The price and inventory of SIHA18N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHA18N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHA18N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHA18N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHA18N60E-GE3?

SIHA18N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHA18N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHA18N60E-GE3?

For technical support, including SIHA18N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHA18N60E-GE3 requirements.

6.How does Aetrix verify that SIHA18N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHA18N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHA18N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHA18N60E-GE3?

All SIHA18N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHA18N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHA18N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHA18N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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